| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
ISH3N150 | isc N-Channel MOSFET Transistor ·FEATURES ·DrainCurrent–ID=3A@TC=25℃ ·DrainSourceVoltage-VDSS:1500V(Min) ·StaticDrain-SourceOn-ResistanceRDS(on): | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | |
N-ChannelEnhancementModeAvalancheRatedFastIntrinsicDiode | IXYS IXYS Corporation | IXYS | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=3A@TC=25℃ ·DrainSourceVoltage- :VDSS=1500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=7.3Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCcon | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-ChannelEnhancementMode | IXYS IXYS Corporation | IXYS | ||
N-ChannelEnhancementModeAvalancheRatedFastIntrinsicDiode | IXYS IXYS Corporation | IXYS | ||
N-ChannelEnhancementModeAvalancheRatedFastIntrinsicDiode | IXYS IXYS Corporation | IXYS | ||
N-ChannelMOSFET DESCRIPTION ·DrainCurrent-ID=178A@TC=25℃ ·DrainSourceVoltage -VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=11mΩ(Max)@VGS=10V ·AvalancheRated ·FastIntrinsicDiode APPLICATIONS ·EasytoMount ·SpaceSavings ·HighPowerDensity | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-ChannelEnhancementModePowerMOSFET GeneralDescription TheseriesofPowerMOSFETsuseadvanced technologyanddesign.ThishighvoltageMOSFETfits Switchedapplications. Features ●Highspeedswitching ●IntrinsiccapacitancesandQgminimized ●100%AvalancheTested Application ●Switchedapplications | NCEPOWERWuxi NCE Power Semiconductor Co., Ltd 无锡新洁能股份无锡新洁能股份有限公司 | NCEPOWER | ||
N-ChannelEnhancementModePowerMOSFET GeneralDescription TheseriesofPowerMOSFETsuseadvanced technologyanddesign.ThishighvoltageMOSFETfits Switchedapplications. Features ●Highspeedswitching ●IntrinsiccapacitancesandQgminimized ●100%AvalancheTested Application ●Switchedapplications | NCEPOWERWuxi NCE Power Semiconductor Co., Ltd 无锡新洁能股份无锡新洁能股份有限公司 | NCEPOWER | ||
N-ChannelEnhancementModePowerMOSFET GeneralDescription TheseriesofPowerMOSFETsuseadvanced technologyanddesign.ThishighvoltageMOSFETfits Switchedapplications Features ●Highspeedswitching ●IntrinsiccapacitancesandQgminimized ●100%AvalancheTested Application ●Switchedapplications | NCEPOWERWuxi NCE Power Semiconductor Co., Ltd 无锡新洁能股份无锡新洁能股份有限公司 | NCEPOWER | ||
N-ChannelEnhancementModePowerMOSFET GeneralDescription TheseriesofPowerMOSFETsuseadvanced technologyanddesign.ThishighvoltageMOSFETfits Switchedapplications. Features ●Highspeedswitching ●IntrinsiccapacitancesandQgminimized ●100%AvalancheTested Application ●Switchedapplications | NCEPOWERWuxi NCE Power Semiconductor Co., Ltd 无锡新洁能股份无锡新洁能股份有限公司 | NCEPOWER | ||
N-ChannelEnhancementModePowerMOSFET GeneralDescription TheseriesofPowerMOSFETsuseadvanced technologyanddesign.ThishighvoltageMOSFETfits Switchedapplications. Features ●Highspeedswitching ●IntrinsiccapacitancesandQgminimized ●100%AvalancheTested Application ●Switchedapplications | NCEPOWERWuxi NCE Power Semiconductor Co., Ltd 无锡新洁能股份无锡新洁能股份有限公司 | NCEPOWER | ||
N-channel1500V,6廓,2.5A,PowerMESH??PowerMOSFET | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | ||
N-channel1500V,6廓,2.5A,PowerMESH??PowerMOSFETinTO-220,TO-247,TO-3PF | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | ||
N-channel1500V,6廓,2.5A,PowerMESH??PowerMOSFET | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=2.5A@TC=25℃ ·DrainSourceVoltage :VDSS=1500V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=9Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·Switchingpower | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-channel1500V,2.5A,6Ωtyp.,PowerMESHPowerMOSFETsinTO-3PF,H2PAK-2,TO-220andTO247packages Features •100avalanchetested •IntrinsiccapacitancesandQgminimized •Highspeedswitching •FullyisolatedTO-3PFplasticpackage,creepagedistancepathis5.4mm(typ.) Applications •Switchingapplications Description ThesePowerMOSFETsaredesignedusingtheSTMicroelectron | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-channel1500V,2.5A,6Ωtyp.,PowerMESHPowerMOSFETsinTO-3PF,H2PAK-2,TO-220andTO247packages Features •100avalanchetested •IntrinsiccapacitancesandQgminimized •Highspeedswitching •FullyisolatedTO-3PFplasticpackage,creepagedistancepathis5.4mm(typ.) Applications •Switchingapplications Description ThesePowerMOSFETsaredesignedusingtheSTMicroelectron | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | ||
N-channel1500V,6廓,2.5A,PowerMESH??PowerMOSFET | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Phoenix/菲尼克斯 |
23/24+ |
3002898 |
9572 |
优势特价 原装正品 全产品线技术支持 |
询价 | ||
原厂原装 |
ROHS |
13352 |
一级代理 原装正品假一罚十价格优势长期供货 |
询价 | |||
DALE |
9442 |
20 |
公司优势库存 热卖中! |
询价 | |||
MEC |
16+ |
原厂封装 |
300 |
原装现货假一罚十 |
询价 | ||
13+ |
DIP |
14648 |
原装分销 |
询价 | |||
VISHAY |
2015+ |
10000 |
普通 |
询价 | |||
AMIS |
22+ |
QFP |
2560 |
绝对原装!现货热卖! |
询价 | ||
AMIS |
16+ |
TQFP |
1232 |
进口原装现货/价格优势! |
询价 | ||
AMIS |
23+ |
TQFP80 |
1120 |
优势库存 |
询价 | ||
AMIS |
23+ |
BGAQFP |
8659 |
原装公司现货!原装正品价格优势. |
询价 |
相关规格书
更多- ISH6N70
- ISHF-220A1
- ISHF-240B1
- ISI30.010AA01
- ISI30.012AA01
- ISI30.013AA01
- ISI31.010AA01
- ISI31.011AA01
- ISI31.013AA01
- ISI32.013AA01
- ISI33.011AA01
- ISI34
- ISI34.010AB01
- ISI34.011AB01
- ISI34.013AB01
- ISI35.010AB01
- ISI35.011AB01
- ISI35.013AB01
- ISI36.010AA01
- ISI36.011AA01
- ISI-500
- ISI-500_1109
- ISI-500-112
- ISI-500-124
- ISI-500-148
- ISI-500-212
- ISI-500-224
- ISI-500-248
- ISIS
- ISISXL
- ISJ0512A
- ISJ-100B
- ISJ-140B
- ISJ4N65
- ISJ4N65
- ISJ4N65
- ISK
- ISK024NE2LM5
- ISK0503A
- ISK057N04LM6
- ISK1212A
- ISK18
- ISK2405A
- ISKJ6
- ISKJ8
相关库存
更多- ISHF-200B1
- ISHF-230B1
- ISI30
- ISI30.010AB01
- ISI30.012AB01
- ISI30.013AB01
- ISI31.010AB01
- ISI31.011AB01
- ISI31.013AB01
- ISI32.013AB01
- ISI33.011AB01
- ISI34.010AA01
- ISI34.011AA01
- ISI34.013AA01
- ISI35.010AA01
- ISI35.011AA01
- ISI35.013AA01
- ISI36
- ISI36.010AB01
- ISI36.011AB01
- ISI-500
- ISI-500-112
- ISI-500-124
- ISI-500-148
- ISI-500-212
- ISI-500-224
- ISI-500-248
- ISI-501
- ISIS31AP4991
- ISJ0505A
- ISJ0515A
- ISJ1205A
- ISJ41042
- ISJ4N65
- ISJ4N65
- ISJ4N65
- ISK018NE1LM7
- ISK036N03LM5
- ISK0505A
- ISK1205A
- ISK16
- ISK20
- ISKJ10
- ISKJ7
- ISK-M12