| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
JMT60N04B | JJW | |||
JJW | ||||
JJW | ||||
JJW | ||||
N-ChannelEnhancementModeFieldEffectTransistor | MCCMicro Commercial Components 美微科美微科半导体股份有限公司 | MCC | ||
N-Channel40-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
N-Channel40-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
40V??60A??N-channelPowerMOSFETApplication:Automotive | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=60A@TC=25℃ ·DrainSourceVoltage-VDSS=40V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=6.5mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION TheNP60N04HLFandNP60N04ILFareN-channel MOSFieldEffectTransistorsdesignedforhighcurrent switchingapplications. FEATURES •Superlowon-stateresistance RDS(on)1=6.5mΩMAX.(VGS=10V,ID=30A) RDS(on)2=9.1mΩMAX.(VGS= | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
MOSFIELDEFFECTTRANSISTOR SWITCHING N-CHANNELPOWERMOSFET DESCRIPTION TheNP60N04HLFandNP60N04ILFareN-channel MOSFieldEffectTransistorsdesignedforhighcurrent switchingapplications. FEATURES •Superlowon-stateresistance RDS(on)1=6.5mΩMAX.(VGS=10V,ID=30A) RDS(on)2=9.1mΩMAX.(VGS= | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=60A@TC=25℃ ·DrainSourceVoltage-VDSS=40V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=6.5mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=60A@TC=25℃ ·DrainSourceVoltage-VDSS=40V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=6.1mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
ProductScoutAutomotive | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
ProductScoutAutomotive | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=60A@TC=25℃ ·DrainSourceVoltage-VDSS=40V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=6.3mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=60A@TC=25℃ ·DrainSourceVoltage-VDSS=40V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=4.3mΩ(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-ChannelMOSFETusesadvancedtrenchtechnology | DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD 杜因特深圳市杜因特半导体有限公司 | DOINGTER | ||
MOSFIELDEFFECTTRANSISTOR Description TheseproductsareN-channelMOSFieldEffectTransistorsdesignedforhighcurrentswitchingapplications. Features •Superlowon-stateresistance RDS(on)=4.3mMAX.(VGS=10V,ID=30A) •LowCiss:Ciss=2450pFTYP.(VDS=25V) •Designedforautomotiveapplication | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS | ||
ProductScoutAutomotive | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | RENESAS |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
JJW/捷捷微 |
1年内 |
TO-220C-3L |
100000 |
类别:Trench MOSFETs;可替代英飞凌型号:IRLB8314; |
询价 | ||
捷捷微 |
23+ |
TO-220C-3L |
68000 |
捷捷微全系列供应,支持终端生产 |
询价 | ||
捷捷微 |
23+ |
TO-220C-3L |
50000 |
专业配单,原装正品假一罚十,代理渠道价格优 |
询价 | ||
捷捷 |
23+/24+ |
TO-220 |
15000 |
原装进口、正品保障、合作持久 |
询价 | ||
JJW/捷捷微 |
24+ |
TO-220C |
100000 |
原装现货 |
询价 | ||
JJW捷捷微 |
22+ |
TO-220 |
65406 |
原厂原装,价格优势!13246658303 |
询价 | ||
JJW |
22+ |
TO-220 |
10000 |
原装正品,渠道现货 |
询价 | ||
JJW |
2226 |
TO-220 |
846 |
原装现货实单支持 |
询价 | ||
JJW/捷捷微 |
22+ |
TO-220 |
22366 |
原装正品 |
询价 | ||
JJW |
24+ |
TO-220 |
10000 |
一级代理保证进口原装正品现货假一罚十价格合理 |
询价 |
相关规格书
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