K559技术资料参数批发供应日立Hitachi-114ic电子网

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零件编号	下载&订购	功能描述	制造商&上传企业	LOGO
K559	文件：49.8 Kbytes Page：1 Pages	HIGH SPEED POWER SWITCHING SILICONN-CHANNELMOSFET HIGHSPEEDPOWERSWITCHING	HitachiHitachi Semiconductor 日立日立公司	Hitachi
K5592S	文件：154.8 Kbytes Page：2 Pages	CIRCUIT PROTECTION	ETC1List of Unclassifed Manufacturers etc未分类制造商未分类制造商	ETC1
KRA559E	文件：89.52 Kbytes Page：4 Pages	EPITAXIALPLANARPNPTRANSISTOR(SWITCHING,INTERFACECIRCUITANDDRIVERCIRCUIT) SWITCHINGAPPLICATION. INTERFACECIRCUITANDDRIVERCIRCUITAPPLICATION. FEATURES ●WithBuilt-inBiasResistors ●SimplifyCircuitDesign ●ReduceaQuantityofPartsandManufacturingProcess ●HighPackingDensity.	KECKEC CORPORATION KEC株式会社	KEC
KRA559U	文件：89.86 Kbytes Page：4 Pages	EPITAXIALPLANARPNPTRANSISTOR(SWITCHING,INTERFACECIRCUITANDDRIVERCIRCUIT) SWITCHINGAPPLICATION. INTERFACECIRCUITANDDRIVERCIRCUITAPPLICATION. FEATURES ●WithBuilt-inBiasResistors ●SimplifyCircuitDesign ●ReduceaQuantityofPartsandManufacturingProcess ●HighPackingDensity.	KECKEC CORPORATION KEC株式会社	KEC
MC559	文件：122.95 Kbytes Page：2 Pages	4wide3-2-2-3inputexpanderforand-or-invertgae 4WIDE3-2-2-3INPUTEXPANDERFORAND-OR-INVERTGATES	ETCList of Unclassifed Manufacturers 未分类制造商	ETC
MIL-PRF-559	文件：240.13 Kbytes Page：3 Pages	SurfaceMountQuadNPNTransistor Description:The2N6989U(TX,TXV)isahermeƟcallysealed,ceramicsurface‐mountdevice,consisƟngof4siliconNPNtransistors.The20pinceramicpackageisidealfordesignswhereboardspaceanddeviceweightareimportantdesignconsideraƟons. TypicalscreeninglotacceptancetestareperM	TTELECTT Electronics. TT电子公司梯梯电子集成制造服务(苏州)有限公司	TTELEC
MRF559	文件：208.6 Kbytes Page：5 Pages	RF&MICROWAVEDISCRETELOWPOWERTRANSISTORS DESCRIPTION:DesignedprimarilyforwidebandlargesignalstagesintheUHFfrequencyrange. Features •Specified@12.5V,870MHzCharacteristics •OutputPower=.5W •MinimumGain=8.0dB •Efficiency50 •CostEffectiveMacroXPackage •ElectrolessTinPlatedLeadsforImprovedSold	MicrosemiMicrosemi Corporation 美高森美美高森美公司	Microsemi
MRF559	文件：136.27 Kbytes Page：5 Pages	RF&MICROWAVEDISCRETELOWPOWERTRANSISTORS DESCRIPTION:DesignedprimarilyforwidebandlargesignalstagesintheUHFfrequencyrange. Features •Specified@12.5V,870MHzCharacteristics •OutputPower=.5W •MinimumGain=8.0dB •Efficiency50 •CostEffectiveMacroXPackage •ElectrolessTinPlatedLeadsforImprovedSold	ADPOW Advanced Power Technology	ADPOW
MRF559G	文件：136.27 Kbytes Page：5 Pages	RF&MICROWAVEDISCRETELOWPOWERTRANSISTORS DESCRIPTION:DesignedprimarilyforwidebandlargesignalstagesintheUHFfrequencyrange. Features •Specified@12.5V,870MHzCharacteristics •OutputPower=.5W •MinimumGain=8.0dB •Efficiency50 •CostEffectiveMacroXPackage •ElectrolessTinPlatedLeadsforImprovedSold	ADPOW Advanced Power Technology	ADPOW
MUR559	文件：56.08 Kbytes Page：2 Pages	GLASSPASSIVATEDSUPERFASTRECTIFIER	JINGHENGJinan Jing Heng Electronics Co., Ltd. 晶恒济南晶恒电子有限责任公司	JINGHENG
MUR559	文件：60.03 Kbytes Page：2 Pages	GLASSPASSIVATEDSUPERFASTRECTIFIER	JINGHENGJinan Jing Heng Electronics Co., Ltd. 晶恒济南晶恒电子有限责任公司	JINGHENG
OD-S559	文件：251.56 Kbytes Page：3 Pages	1310nmDFB-LDModule 1310nmDFB-LDModulewithbuilt-inopticalisolator APPLICATIONS •CATVreturnlink	NECRenesas Electronics America 瑞萨日本瑞萨电子株式会社	NEC
PZT559	文件：930.37 Kbytes Page：2 Pages	PNPSiliconPlanar	SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司	SECOS
PZT559A	文件：705.14 Kbytes Page：4 Pages	SiliconPlanarMediumPowerTransistor	SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司	SECOS
PZT559A-C	文件：704.52 Kbytes Page：4 Pages	SiliconPlanarMediumPowerTransistor	SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司	SECOS
QBS-559	文件：183.38 Kbytes Page：2 Pages	50WattPowerAmplifier	APITECH API Technologies Corp	APITECH
SNC559	文件：437.93 Kbytes Page：12 Pages	TwoChannelDirectDriveSpeechController? INTRODUCTION SNC559isatwo-channelvoicesynthesizerICwithPWMdirectdrivecircuit.Itbuilt-ina4-bittinycontrollerwithone4-bitinputport,two4-bitoutputportsandthree4-bitI/Oports.ByprogrammingthroughthetinycontrollerinSNC559,user’svariedapplicationsincludingvoic	SONiXSONiX Technology Company 松翰科技	SONiX
SS559	文件：272.84 Kbytes Page：8 Pages	HallLatch-HighSensitivity GeneralDescription TheSS559isaunipolarHall-effectsensorICfabricatedfrommixedsignalCMOStechnology.Thedeviceintegratesavoltageregulator,Hallsensorwithdynamicoffsetcancellationsystem,Schmitttriggerandanopen-drainoutputdriver,allinasinglepackage. FeaturesandB	SECELECTRONICS SEC Electronics Inc.	SECELECTRONICS
SS559ESOT	文件：272.84 Kbytes Page：8 Pages	HallLatch-HighSensitivity GeneralDescription TheSS559isaunipolarHall-effectsensorICfabricatedfrommixedsignalCMOStechnology.Thedeviceintegratesavoltageregulator,Hallsensorwithdynamicoffsetcancellationsystem,Schmitttriggerandanopen-drainoutputdriver,allinasinglepackage. FeaturesandB	SECELECTRONICS SEC Electronics Inc.	SECELECTRONICS
SS559ESOT	文件：289.66 Kbytes Page：8 Pages	HallLatch-HighSensitivity GeneralDescription TheSS559isaunipolarHall-effectsensorICfabricatedfrommixedsignalCMOStechnology.Thedeviceintegratesavoltageregulator,Hallsensorwithdynamicoffsetcancellationsystem,Schmitttriggerandanopen-drainoutputdriver,allinasinglepackage. FeaturesandB	SECELECTRONICS SEC Electronics Inc.	SECELECTRONICS

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详细参数

型号：
K559
功能描述：
CIRCUIT PROTECTION

供应商	型号	品牌	批号	封装	库存	备注	价格
齐创科技(上海,北京,青岛)有限公司	K559	日立	23+	TO-3P	5000	原装正品,假一罚十	询价
深圳市近平电子有限公司	K559		6000	面议	19	TO-3P	询价
深圳市柯尔基电子有限公司	K559	日立HITACHI	23+24	TO-3P	9860	原厂原包装。终端BOM表可配单。可开13%增值税	询价
深圳市鹏和科技有限公司	K55A10J1		24+	TO-220F	5000	全现原装公司现货	询价
京海半导体(深圳)有限公司	K55A10J1	TOSHIBA/东芝	21+	TO-220F	10000	原装现货假一罚十	询价
贸泽芯城（深圳）电子科技有限公司	K55A10J1	12	23+	TO-220F	13000	原厂授权一级代理,专业海外优势订货,价格优势、品种	询价
深圳市安富世纪电子有限公司	K55A10J1	TOSHIBA/东芝	23+	TO-220F	8000	只做原装现货	询价
深圳市创盛芯科技有限公司	K55A10J1MOS(场效应管)	12	24+	TO-220F	7500	原装现货假一赔十	询价
深圳市国宇半导体科技有限公司	K560	HITACHI	23+	TO-3P	10000	公司只做原装正品	询价
深圳市河锋鑫科技有限公司	K560	HITACHI	TO-3P	22+	6000	十年配单,只做原装	询价

更多K559供应商更新时间2024-11-26 15:36:00

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