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K2057

Field Effect Transistor Silicon N Channel MOS Type

FieldEffectTransistor SiliconNChannelMOSType(π-MOSIV) HighSpeed,HighCurrentSwitchingApplications Features ●LowDrain-SourceONResistance -RDS(ON)=0.24Ω(Typ.) ●HighForwardTransferAmittnace -|Yfs|=15S(Typ.) ●LowLeakageCurrent -IDSS=-100μA(Max.)(VDS

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

KIA2057

BIPOLARLINEARINTEGRATEDCIRCUIT(AM/FMIFMPXFORDIGITALTUNINGSYSTEM)

AM/FMIF+MPX(forDigitalTuningSystem)

KECKEC CORPORATION

KEC株式会社

KIA2057N

BIPOLARLINEARINTEGRATEDCIRCUIT(AM/FMIFMPXFORDIGITALTUNINGSYSTEM)

AM/FMIF+MPX(forDigitalTuningSystem)

KECKEC CORPORATION

KEC株式会社

KOM2057L

3fach-Silizium-Fotodiodenzeile3-ChipSiliconPhotodiodeArray

Features ●Especiallysuitableforapplicationsfrom400nmto1100nm ●Shortswitchingtime(typ.14ns) ●DILplasticpackage Applications ●Follow-upcontrols ●Edgedrives ●Positioning ●Industrialelectronics ●Forcontrolanddrivecircuits

SIEMENSSiemens Ltd

西门子德国西门子股份公司

LTC2057

BufferedOctal,16-Bit,200ksps/ChDifferential짹10.24VADCwith30VP-PCommonModeRange

LINERLinear Technology

凌力尔特凌特半导体

LTC2057

HighVoltage,LowNoiseZero-DriftOperationalAmplifier

LINERLinear Technology

凌力尔特凌特半导体

LTC2057

PrecisionInstrumentationAmplifierwithLevelShiftandOutputClamping

DESCRIPTION TheLT®6372-1isagainprogrammable,highprecisioninstrumentationamplifierthatdeliversindustryleadingDCprecision.Thishighprecisionenablessmallersignalstobesensedandeasescalibrationrequirements,particularlyovertemperature.TheLT6372-1incorporatesfeaturesin

ADAnalog Devices

亚德诺亚德诺半导体技术有限公司

LTC2057

HighVoltage,LowNoiseZero-DriftOperationalAmplifier

LINEAR_DIMENSIONS

Linear Dimensions Semiconductor

LTC2057HDD#PBF

HighVoltage,LowNoiseZero-DriftOperationalAmplifier

LINEAR_DIMENSIONS

Linear Dimensions Semiconductor

LTC2057HDD#PBF

HighVoltage,LowNoiseZero-DriftOperationalAmplifier

LINEAR_DIMENSIONS

Linear Dimensions Semiconductor

LTC2057HDD#TRPBF

HighVoltage,LowNoiseZero-DriftOperationalAmplifier

LINEAR_DIMENSIONS

Linear Dimensions Semiconductor

LTC2057HDD#TRPBF

HighVoltage,LowNoiseZero-DriftOperationalAmplifier

LINEAR_DIMENSIONS

Linear Dimensions Semiconductor

LTC2057HMS#PBF

HighVoltage,LowNoiseZero-DriftOperationalAmplifier

LINEAR_DIMENSIONS

Linear Dimensions Semiconductor

LTC2057HMS#PBF

HighVoltage,LowNoiseZero-DriftOperationalAmplifier

LINEAR_DIMENSIONS

Linear Dimensions Semiconductor

LTC2057HMS#TRPBF

HighVoltage,LowNoiseZero-DriftOperationalAmplifier

LINEAR_DIMENSIONS

Linear Dimensions Semiconductor

LTC2057HMS#TRPBF

HighVoltage,LowNoiseZero-DriftOperationalAmplifier

LINEAR_DIMENSIONS

Linear Dimensions Semiconductor

LTC2057HV

HighVoltage,LowNoiseZero-DriftOperationalAmplifier

LINERLinear Technology

凌力尔特凌特半导体

LTC2057HV

BufferedOctal,16-Bit,200ksps/ChDifferential짹10.24VADCwith30VP-PCommonModeRange

LINERLinear Technology

凌力尔特凌特半导体

LTC2057HV

36V,LowNoise,ZeroDriftOpAmp

FEATURES Supplyvoltagerange:4.5Vto36V Offsetvoltage:±4μVmaximumat5V Offsetvoltagedrift:0.01μV/°Cmaximumat5V Inputnoise Voltage:88nVp-pfrom0.1Hzto10Hztypical Spectraldensityvoltage:4.2nV/√Hztypicalat1kHz Rail-to-railoutput Unity-gainstable GBP:5

ADAnalog Devices

亚德诺亚德诺半导体技术有限公司

LTC2057HV

10μASupplyCurrent,LowIB,Zero-DriftOperationalAmplifier

FEATURES APPLICATIONS nLowSupplyCurrent:10μAMaximum(perAmplifier) nOffsetVoltage:5μVMaximum nOffsetVoltageDrift:0.02μV/°CMaximum nInputBiasCurrent: n5pATypical n50pAMaximum,–40°Cto85°C n150pAMaximum,–40°Cto125°C nIntegratedEMIFilter(90dBRejectionat1.8

ADAnalog Devices

亚德诺亚德诺半导体技术有限公司

供应商型号品牌批号封装库存备注价格
TOS
24+
40000
询价
东芝
23+
TO-247
3000
全新原装
询价
东芝
6000
面议
19
TO-3P
询价
TOSHIBA/东芝
23+
TO-247
13000
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
TOSHIBA
22+
TO-247
8000
原装正品支持实单
询价
2018+
TO252TO251
6528
只做原装正品假一赔十!只要网上有上百分百有库存放心
询价
RENESAS/瑞萨
21+
TO-251
10000
原装现货假一罚十
询价
RENESAS
TO-251
68900
原包原标签100%进口原装常备现货!
询价
RENESAS
23+
TO-251
8000
只做原装现货
询价
RENESAS
23+
TO-251
7000
询价
更多K2057供应商 更新时间2024-11-21 15:30:00