| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
P3055LD | N-Channel Logic Level Enhancement Mode Field Effect Transistor
| NIKOSEMNIKO SEMICONDUCTOR CO., LTD. 尼克森尼克森微電子股份有限公司 | NIKOSEM | |
P3055LD | N-Channel Logic Level Enhancement Mode Field Effect Transistor | etc2List of Unclassifed Manufacturers etc未分类制造商etc2未分类制造商 | etc2 | |
N-Channel Logic Level Enhancement Mode Field Effect Transistor | etc2List of Unclassifed Manufacturers etc未分类制造商etc2未分类制造商 | etc2 | ||
N-Channel 30-V (D-S) MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
N-ChannelLogicLevelEnhancementModeFieldEffectTransistor [NIKO-SEM] N-ChannelLogicLevelEnhancementModeFieldEffectTransistor SOT-223Lead-Free | etc2List of Unclassifed Manufacturers etc未分类制造商etc2未分类制造商 | etc2 | ||
N-ChannelLogicLevelEnhancementModeFieldEffectTransistor [NIKO-SEM] N-ChannelLogicLevelEnhancementModeFieldEffectTransistor | ETCList of Unclassifed Manufacturers 未分类制造商 | ETC | ||
N-ChannelLogicLevelEnhancementModeFieldEffectTransistor [NIKO-SEM] N-ChannelLogicLevelEnhancementModeFieldEffectTransistor | etc2List of Unclassifed Manufacturers etc未分类制造商etc2未分类制造商 | etc2 | ||
PowerMOStransistor GENERALDESCRIPTION N-channelenhancementmode,field-effectpowertransistorinaplasticenvelopeusing’trench’technology. FEATURES •’Trench’technology •Lowon-stateresistance •Fastswitching | PhilipsNXP Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | ||
N-channelTrenchMOStransistor GENERALDESCRIPTION N-channelenhancementmode,field-effectpowertransistorinaplasticenvelopeusing’trench’technology. FEATURES •’Trench’technology •Lowon-stateresistance •Fastswitching | PhilipsNXP Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | ||
N-channelTrenchMOSstandardlevelFET Generaldescription StandardlevelN-channelenhancementmodeField-EffectTransistor(FET)inaplasticpackageusingTrenchMOStechnology.Thisproductisdesignedandqualifiedforuseincomputing,communications,consumerandindustrialapplicationsonly. Featuresandbenefits ■Lowconduc | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | nxp | ||
N-Channel60V(D-S)MOSFET FEATURES •TrenchFET®PowerMOSFET •100RgandUISTested •Materialcategorization: Fordefinitionsofcompliancepleasesee APPLICATIONS •DC/DCConverters •DC/ACInverters •MotorDrives | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
PowerMOStransistorLogiclevelFET GENERALDESCRIPTION N-channelenhancementmodelogiclevelfield-effectpowertransistorinaplasticenvelopesuitableforsurfacemountingfeaturinghighavalancheenergycapability,stableblockingvoltage,fastswitchingandhighthermalcyclingperformancewithlowthermalresistance.Intend | PhilipsNXP Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | ||
N-channelTrenchMOStransistor GENERALDESCRIPTION N-channelenhancementmode,field-effectpowertransistorinaplasticenvelopeusing’trench’technology. FEATURES •’Trench’technology •Lowon-stateresistance •Fastswitching | PhilipsNXP Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | ||
N-channelTrenchMOStransistor GENERALDESCRIPTION N-channelenhancementmode,field-effectpowertransistorinaplasticenvelopeusing’trench’technology. FEATURES •’Trench’technology •Lowon-stateresistance •Fastswitching | PhilipsNXP Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | ||
N-channelTrenchMOSstandardlevelFET Generaldescription StandardlevelN-channelenhancementmodeField-EffectTransistor(FET)inaplasticpackageusingTrenchMOStechnology.Thisproductisdesignedandqualifiedforuseincomputing,communications,consumerandindustrialapplicationsonly Featuresandbenefits ■Lowconduct | nxpNXP Semiconductors 恩智浦恩智浦半导体公司 | nxp | ||
PowerMOStransistorLogiclevelFET GENERALDESCRIPTION N-channelenhancementmodelogiclevelfield-effectpowertransistorinaplasticenvelopefeaturinghighavalancheenergycapability,stableblockingvoltage,fastswitchingandhighthermalcyclingperformancewithlowthermalresistance.IntendedforuseinSwitchedModePo | PhilipsNXP Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | ||
N-channelTrenchMOStransistor GENERALDESCRIPTION N-channelenhancementmode,field-effectpowertransistorinaplasticenvelopewithanelectricallyisolatedmountingtab.Thedeviceuses’trench’technologytoachievelowon-stateresistance. FEATURES •’Trench’technology •Lowon-stateresistance •Fastswitching • | PhilipsNXP Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | ||
PowerMOStransistorLogiclevelFET GENERALDESCRIPTION N-channelenhancementmodelogiclevelfield-effectpowertransistorinaplasticfull-packenvelope.Thedevicefeatureshighavalancheenergycapability,stableblockingvoltage,fastswitchingandhighthermalcyclingperformancewithlowthermalresistance.Intendedforus | PhilipsNXP Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | ||
MicroelectronicPowerICHEXFETPowerMOSFETPhotovoltaicRelaySingle-Pole,Normally-Open0-300VAC/DC,50mA | IRF International Rectifier | IRF | ||
MicroelectronicPowerICHEXFET짰PowerMOSFETPhotovoltaicRelaySingle-Pole,Normally-Open0-300VAC/DC,50mA | IRF International Rectifier | IRF |
详细参数
- 型号：
P3055LD
- 功能描述：
N-Channel Logic Level Enhancement Mode Field Effect Transistor
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NIKO |
24+ |
TO-252 |
5000 |
只做原厂渠道 可追溯货源 |
询价 | ||
NIKO |
21+ |
TO-252 |
34000 |
原装现货,一站式配套 |
询价 | ||
NIKO |
最新 |
TO-252 |
6800 |
全新原装公司现货低价 |
询价 | ||
NIKO |
24+ |
TO-252 |
6290 |
新进库存/原装 |
询价 | ||
NIKO |
12+ |
TO-252(DPAK) |
15000 |
全新原装,绝对正品,公司现货供应。 |
询价 | ||
NIKO |
17+ |
TO252 |
6200 |
100%原装正品现货 |
询价 | ||
NIKOS |
23+ |
TO2522 |
8890 |
价格优势/原装现货/客户至上/欢迎广大客户来电查询 |
询价 | ||
原厂正品 |
23+ |
TO252 |
16000 |
原装正品,假一罚十 |
询价 | ||
NIKO |
24+ |
TO-252 |
5000 |
全现原装公司现货 |
询价 | ||
NIKO |
2018+ |
TO252 |
6528 |
承若只做进口原装正品假一赔十! |
询价 |
相关规格书
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相关库存
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- P-308-AB
- P-308-CCT
- P-3090361A31
- P309-M01-F11-632
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- P309-M07-F09-440
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- P30A-1-1P2J
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- P-30AARM
- P30AN34
- P30B-0P2J
- P30B-1P2J
- P30B-3P2J
- P30B-5P2J
- P30B-6P2JT
- P30C42A12D1-120
- P30C47A12D1-120
- P30DB1329AA00F
- P30FB2
- P30G2721-F
- P30G272J1
- P30G3325-F
- P30G332K5