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PTE1132X

CAPTEUR DE PROXIMITE MAGNETIQUE

CELDUCcelduc Relais

凡纪继电器凡纪继电器(上海)有限公司

Q1132

Toggleswitch,multiplecircuitry,termination,andcaps

APEX-ELECTRONICS

Apex Electronics Co., Ltd

RN1132MFV

TOSHIBATransistorSiliconNPNEpitaxialType(PCTProcess)(BiasResistorbuilt-inTransistor)

SwitchingApplications InverterCircuitApplications InterfaceCircuitApplications DriverCircuitApplications Ultra-smallpackage,suitedtoveryhighdensitymounting Incorporatingabiasresistorintothetransistorreducesthenumberofparts,so enablingthemanufactureofevermor

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

S1132

HIGHRIPPLE-REJECTIONANDLOWDROPOUT

SIISeiko Instruments Inc

精工爱普生精工爱普生株式会社

S-1132

HIGHRIPPLE-REJECTIONANDLOWDROPOUTMIDDLEOUTPUTCURRENTCMOSVOLTAGEREGULATOR

ABLICABLIC Inc.

艾普凌科艾普凌科有限公司

S-1132

HIGHRIPPLE-REJECTIONLOWDROPOUTMIDDLEOUTPUTCURRENTCMOSVOLTAGEREGULATOR

HIGHRIPPLE-REJECTIONLOWDROPOUTMIDDLEOUTPUTCURRENTCMOSVOLTAGEREGULATOR S-1132Series TheS-1132Seriesisapositivevoltageregulatorwithalowdropoutvoltage,highoutputvoltageaccuracy,andlowcurrentconsumption(300mAoutputcurrent)developedbasedonCMOStechnology.A

SIISeiko Instruments Inc

精工爱普生精工爱普生株式会社

SC1132CT

COMBINATIONSWITCHINGCONTROLLERANDLOWDROPOUTREGULATOR

SEMTECH

Semtech Corporation

SC1132CT-XY

COMBINATIONSWITCHINGCONTROLLERANDLOWDROPOUTREGULATOR

SEMTECH

Semtech Corporation

SI1132

Integratedambientlightsensor

SILABS

Silicon Laboratories

SLD1132VS

635nmRedLaserDiode

Description TheSLD1132VSisaredlaserdiodedesignedforlaserpointers.Itswavelength(635nmtyp.)isshortenedby35nmandvisibilityisincreasedbyapproximately7times,comparedtotheconventionalvisiblelaserdiode(670nmtyp.). Features •Shortwavelength(635nmtyp.) •Smallpac

SonySONY

索尼索 尼

SMV1132A-LF

Voltage-ControlledOscillator

ZCOMM

Z-Communications, Inc

SMV1132A-LF

Voltage-ControlledOscillatorSurfaceMountModule

ZCOMM

Z-Communications, Inc

STB1132

PNPSiliconTransistor

Description •Mediumpoweramplifier Features •PC(Collectordissipation)=2W(Ceramicsubstateof40×40×0.8mmused) •Lowcollectorsaturationvoltage:VCE(sat)=-0.2V(Typ.) •ComplementarypairwithSTD1664

AUK

AUK corp

STB1132

PNPSiliconTransistor

Description •Mediumpoweramplifier Features •PC(Collectorpowerdissipation) =1W(Ceramicsubstateof250㎟×0.8tused) •Lowcollectorsaturationvoltage:VCE(sat)=-0.2V(Typ.) •ComplementarypairwithSTD1664

KODENSHIKODENSHI_AUK CORP.

可天士可天士光电子集团

STB1132

PNPSiliconTransistor

KODENSHIKODENSHI_AUK CORP.

可天士可天士光电子集团

TA1132A

SAWFilter881.5MHz

TAI-SAW

TAI-SAW TECHNOLOGY CO., LTD.

TB1132A

47.25MHz6.2MHzBW13.8x4.6mmPlasticDIPSAWIFFilter

TAI-SAW

TAI-SAW TECHNOLOGY CO., LTD.

TSB1132

LowVcesatPNPTransistor

TSCTaiwan Semiconductor Company, Ltd

台湾半导体台湾半导体股份有限公司

TSB1132

LowFrequencyPNPTransistor

Features ●LowVCE(SAT)-0.15@IC/IB=--.5A/-50mA(Typ.) ●ExcellentDCcurrentgaincharacteristics Structure ●EpitaxialPlanarType ●PNPSiliconTransistor

TSCTaiwan Semiconductor Company, Ltd

台湾半导体台湾半导体股份有限公司

TSB1132CY

LowFrequencyPNPTransistor

Features ●LowVCE(SAT)-0.15@IC/IB=--.5A/-50mA(Typ.) ●ExcellentDCcurrentgaincharacteristics Structure ●EpitaxialPlanarType ●PNPSiliconTransistor

TSCTaiwan Semiconductor Company, Ltd

台湾半导体台湾半导体股份有限公司

供应商型号品牌批号封装库存备注价格
INFINEON/英飞凌
24+
NA
16000
原装正品现货
询价
INFINEON/英飞凌
2022+
NA
57550
询价
INFINEON/英飞凌
23+
NA
89630
当天发货全新原装现货
询价
INFINEON
23+
NA
8000
只做原装现货
询价
INFINEON
23+
NA
7000
询价
CELDUC
24+
5000
全新原装
询价
NA
2017+
NA
28562
只做原装正品假一赔十!
询价
INFINEON
24+
NA
5000
全现原装公司现货
询价
INFINEON/英飞凌
22+
NA
10500
只有原装 低价 实单必成
询价
INFINEON
2310+
NA
3886
优势代理渠道,原装现货,可全系列订货
询价
更多PTE1132X供应商 更新时间2024-11-25 8:46:00