零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
---|---|---|---|---|
Low-DropoutLinearRegulatorControllerwithPGOODIndication GeneralDescription TheRT9024isalow-dropoutvoltageregulatorcontrollerwithaspecificPGOODindicatingscheme.ThepartcoulddriveanexternalN-MOSFETforvariousapplications.ThepartisoperatedwithVCCpowerrangingfrom3.8Vto13.5V.Withsuchatopology,itswithadvantagesoffl | RichTekRichtek Technology Corporation 台湾立绮立绮科技 | RichTek | ||
Low-DropoutLinearRegulatorControllerwithPGOODIndication GeneralDescription TheRT9024isalow-dropoutvoltageregulatorcontrollerwithaspecificPGOODindicatingscheme.ThepartcoulddriveanexternalN-MOSFETforvariousapplications.ThepartisoperatedwithVCCpowerrangingfrom3.8Vto13.5V.Withsuchatopology,itswithadvantagesoffl | RichTekRichtek Technology Corporation 台湾立绮立绮科技 | RichTek | ||
Low-DropoutLinearRegulatorControllerwithPGOODIndication GeneralDescription TheRT9024isalow-dropoutvoltageregulatorcontrollerwithaspecificPGOODindicatingscheme.ThepartcoulddriveanexternalN-MOSFETforvariousapplications.ThepartisoperatedwithVCCpowerrangingfrom3.8Vto13.5V.Withsuchatopology,itswithadvantagesoffl | RichTekRichtek Technology Corporation 台湾立绮立绮科技 | RichTek | ||
900MHztransmitmodulatorand1.3GHzfractional-Nsynthesizer DESCRIPTION Thisspecificationdefinestherequirementsforatransmittermodulatorandfractional–NsynthesizerICtobeusedincellulartelephoneswhichemploytheNorthAmericanDualModeCellularSystem(IS–136). FEATURES •Lowcurrentfrom3.75Vsupply •Lowphasenoise •Mainloopwith | PhilipsNXP Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | ||
iscP-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
AdvancedPowerMOSFET FEATURES ●AvalancheRuggedTechnology ●RuggedGateOxideTechnology ●LowerInputCapacitance ●ImprovedGateCharge ●ExtendedSafeOperatingArea ●LowerLeakageCurrent:10µA(Max.)@VDS=-60V ●LowerRDS(ON):0.206Ω(Typ.) | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
AvalancheRuggedTechnology FEATURES ●AvalancheRuggedTechnology ●RuggedGateOxideTechnology ●LowerInputCapacitance ●ImprovedGateCharge ●ExtendedSafeOperatingArea ●LowerLeakageCurrent:10µA(Max.)@VDS=-60V ●LowerRDS(ON):0.206Ω(Typ.) | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
P-channelEnhancementModePowerMOSFET Features VDS=-60V,ID=-20A RDS(ON) | BychipBYCHIP ELECTRONICS CO., LIMITED 百域芯深圳市百域芯科技有限公司 | Bychip | ||
AvalancheRuggedTechnology FEATURES ●AvalancheRuggedTechnology ●RuggedGateOxideTechnology ●LowerInputCapacitance ●ImprovedGateCharge ●ExtendedSafeOperatingArea ●LowerLeakageCurrent:10µA(Max.)@VDS=-60V ●LowerRDS(ON):0.206Ω(Typ.) | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
AdvancedPowerMOSFET | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
iscP-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
P-Channel60-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体(台湾)有限公司 | VBSEMI | ||
AdvancedPowerMOSFET FEATURES ●AvalancheRuggedTechnology ●RuggedGateOxideTechnology ●LowerInputCapacitance ●ImprovedGateCharge ●ExtendedSafeOperatingArea ●LowerLeakageCurrent:10µA(Max.)@VDS=-60V ●LowerRDS(ON):0.206Ω(Typ.) | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
RepetitiveAvalancheRated | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
PowerMOSFET | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
PowerMOSFET | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay | ||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI | ||
PowerMOSFET DESCRIPTION ThirdgenerationPowerMOSFETsfromVishayprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effictiveness. TheDPAKisdesignedforsurfacemountingusingvaporphase,infrared,orwavesolderingtechniques.Th | KERSEMI Kersemi Electronic Co., Ltd. | KERSEMI |
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
PHILIPS/飞利浦 |
2019+ |
SMD |
6992 |
原厂渠道 可含税出货 |
询价 | ||
M/A-COM |
23+ |
1688 |
房间现货库存:QQ:373621633 |
询价 | |||
PHILPS |
2022 |
133 |
原厂原装正品,价格超越代理 |
询价 | |||
PHILIPS |
23+ |
TO-63 |
850 |
专营高频管模块,全新原装! |
询价 | ||
PHILIPS/飞利浦 |
24+ |
100 |
现货供应 |
询价 | |||
PHILIPS/飞利浦 |
23+ |
TO-59 |
8510 |
原装正品代理渠道价格优势 |
询价 | ||
N/A |
2021+ |
SMD |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
询价 | ||
原装 |
1923+ |
TO-63 |
8600 |
莱克讯原厂货源每一片都来自原厂原装现货薄利多 |
询价 | ||
原厂正品 |
23+ |
SOT-669 |
5000 |
原装正品,假一罚十 |
询价 | ||
NXP |
2016+ |
SOT-669 |
6000 |
只做原装,假一罚十,公司可开17%增值税发票! |
询价 |
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