首页 >PLM2105DSGR>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
PLM2105DSGR | LM2105 105-V, 0.5-A/0.8-A Half-Bridge Driver with 5-V UVLO and Integrated Bootstrap Diode 1Features •DrivestwoN-channelMOSFETsinhalf-bridge configuration •Integratedbootstrapdiode •5-VtypicalundervoltagelockoutonGVDD •105-VmaximumrecommendedvoltageonBST •–19.5-Vabsolutemaximumnegativetransient voltagehandlingonSH •0.5-A/0.8-Apeaksource/sinkcurr | TITexas Instruments 德州仪器美国德州仪器公司 | TI | |
1WATTRFICPOWERAMPLIFIER800TO2000MHZOPERATION | ETCList of Unclassifed Manufacturers 未分类制造商 | ETC | ||
Verticallevelsensor | CELDUCcelduc Relais 凡纪继电器凡纪继电器（上海）有限公司 | CELDUC | ||
Wide-Input,SynchronousBuckDigitalControllerwithAuto-Control&SMBus??PMBus??forUSB-PD | ROHMRohm 罗姆罗姆半导体集团 | ROHM | ||
HIGHPOWERLINEARUHFAMPLIFIER ProductDescription TheRF2105Lisahighpower,highefficiencylinearamplifierIC.ThedeviceismanufacturedonanadvancedGalliumArsenideHeterojunctionBipolarTransistor(HBT)process,andhasbeendesignedforuseasthefinalRFamplifierindigitalcellularphonetransmittersorISMa | RFMD RF Micro Devices | RFMD | ||
HIGHPOWERLINEARUHFAMPLIFIER ProductDescription TheRF2105Lisahighpower,highefficiencylinearamplifierIC.ThedeviceismanufacturedonanadvancedGalliumArsenideHeterojunctionBipolarTransistor(HBT)process,andhasbeendesignedforuseasthefinalRFamplifierindigitalcellularphonetransmittersorISMa | RFMD RF Micro Devices | RFMD | ||
HIGHPOWERLINEARUHFAMPLIFIER ProductDescription TheRF2105Lisahighpower,highefficiencylinearamplifierIC.ThedeviceismanufacturedonanadvancedGalliumArsenideHeterojunctionBipolarTransistor(HBT)process,andhasbeendesignedforuseasthefinalRFamplifierindigitalcellularphonetransmittersorISMa | RFMD RF Micro Devices | RFMD | ||
TOSHIBATransistorSiliconPNPEpitaxialType(PCTProcess) Switching,InverterCircuit,InterfaceCircuit AndDriverCircuitApplications Built-inbiasresistors Simplifiedcircuitdesign Fewerpartsandsimplifiedmanufacturingprocess ComplementarytoRN1101~RN1106 | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | TOSHIBA | ||
SiliconPNPEpitaxialType(PCTProcess)Switching,InverterCircuit,InterfaceCircuitAndDriverCircuitApplications | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | TOSHIBA | ||
Switching,InverterCircuit,InterfaceCircuitandDriverCircuitApplications Switching,InverterCircuit,InterfaceCircuit AndDriverCircuitApplications Built-inbiasresistors Simplifiedcircuitdesign Fewerpartsandsimplifiedmanufacturingprocess ComplementarytoRN1101~RN1106 | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | TOSHIBA | ||
Switching,InverterCircuit,InterfaceCircuitandDriverCircuitApplications Switching,InverterCircuit,InterfaceCircuitandDriverCircuitApplications •Extrasmallpackage(CST3)isapplicableforextrahighdensityfabrication. •Incorporatingabiasresistorintoatransistorreducespartscount.Reducingthepartscountenablethemanufactureofevermor | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | TOSHIBA | ||
SwitchingApplicationsInverterCircuitApplicationsInterfaceCircuitApplicationsDriverCircuitApplications SwitchingApplications InverterCircuitApplications InterfaceCircuitApplications DriverCircuitApplications •Incorporatingabiasresistorintoatransistorreducespartscount.Reducingthepartscountenablethemanufactureofevermorecompactequipmentandsaveassemblycost | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | TOSHIBA | ||
Switching,InverterCircuit,InterfaceCircuitandDriverCircuitApplications Switching,InverterCircuit,InterfaceCircuitandDriverCircuitApplications Ultra-smallpackage,suitedtoveryhighdensitymounting Incorporatingabiasresistorintothetransistorreducesthenumberofparts,soenablingthemanufactureofevermorecompactequipmentandlowering | TOSHIBAToshiba Semiconductor 东芝株式会社東芝 | TOSHIBA | ||
1WattSMDMiniatureIsolatedSingleOutput | RECOM Recom International Power | RECOM | ||
1WattSMDMiniatureIsolatedSingleOutput | RECOM Recom International Power | RECOM | ||
21/32/43/60VOICEROM Description TheMSS6605isasingle-chipCMOSVLSIROMthatcanmemorizevoiceupto60secondsusingMOSELqualifiedcodingmethod(MPCM)at5.8KHz. Threeaddressinginterfacesareprovided:CPUmode,KEYBOARDmodeandMATRIXmodeforversatileapplications.Thevoicecontentcanbestoredsep | MOSELMOSEL VETELIC INC. 茂矽台湾茂矽电子股份有限公司 | MOSEL | ||
21/32/43/60VOICEROM Description TheMSS6605isasingle-chipCMOSVLSIROMthatcanmemorizevoiceupto60secondsusingMOSELqualifiedcodingmethod(MPCM)at5.8KHz. Threeaddressinginterfacesareprovided:CPUmode,KEYBOARDmodeandMATRIXmodeforversatileapplications.Thevoicecontentcanbestoredsep | MOSELMOSEL VETELIC INC. 茂矽台湾茂矽电子股份有限公司 | MOSEL | ||
PLASTICSURFACEMOUNTGENERALPURPOSEABRUPTVARACTORDIODES PLASTICSURFACEMOUNTGENERALPURPOSEABRUPTVARACTORDIODES DCPowerDissipation@Ta=25°C250mW ReverseBreakdownVoltage@10µA30VMin MaxReverseCurrent(IR)@Ta=25°C0.1µA@25Vdc OperatingTemperature(Topr)-55to+125°C StorageT | KNOX Knox Semiconductor, Inc | KNOX | ||
DualLineCANBusProtector | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
BAWFilter2442MHzSMD1.1X0.9mm(BW=79MHz) | TAI-SAW TAI-SAW TECHNOLOGY CO., LTD. | TAI-SAW |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
24+ |
3060 |
询价 | |||||
MURATA |
2016+ |
SMD |
2486 |
只做原装,假一罚十,公司可开17%增值税发票! |
询价 | ||
MURATA |
999999 |
提供BOM表配单只做原装货值得信赖 |
询价 | ||||
MURATA/村田 |
24+ |
2486 |
全新原装数量均有多电话咨询 |
询价 | |||
原装正品 |
17+ |
NA |
66300 |
一级代理/全新原装现货/长期供应! |
询价 | ||
DJD |
2023+ |
DLW5A |
48000 |
AI智能識别、工業、汽車、醫療方案LPC批量及配套一站 |
询价 | ||
MURATA |
原厂封装 |
68500 |
一级代理 原装正品假一罚十价格优势长期供货 |
询价 | |||
MURATA |
1923+ |
原厂封装 |
35689 |
绝对进口原装现货库存特价销售 |
询价 | ||
MURATA |
2023+ |
1812 |
80000 |
一级代理/分销渠道价格优势 十年芯程一路只做原装正品 |
询价 | ||
MURATA/村田 |
23+ |
360000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 |
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