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SMPJ110

N-Channel Silicon Junction Field-Effect Transistors

SmallOutline(SurfaceMount)PackageDevices

InterFET

InterFET Corporation

SMPJ110A

N-Channel Silicon Junction Field-Effect Transistors

SmallOutline(SurfaceMount)PackageDevices

InterFET

InterFET Corporation

SMTPB110

TRISILTM

DESCRIPTION TheSMTPBxxserieshasbeendesignedtoprotecttelecommunicationequipmentagainstlightningandtransientinducedbyACpowerlines. FEATURES BIDIRECTIONALCROWBARPROTECTION. BREAKDOWNVOLTAGERANGE:From62VTo270V. HOLDINGCURRENT:IH=150mAmin REPETITIVEPE

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

SMZ110

SurfacemountSilicon-ZenerDiodes(non-planartechnology)

SurfacemountSilicon-ZenerDiodes(non-planartechnology) •Maximumpowerdissipation2W •NominalZ-voltage1…200V •PlasticcaseMELFDO-213AB •Weightapprox.0.12g •PlasticmaterialhasULclassifi

Diotec

Diotec Semiconductor

SMZ110

SurfaceMountSilicon-ZenerDiodes(non-planartechnology)

Diotec

Diotec Semiconductor

SMZ110

Zenersilicondiodes

SemikronSemikron International

赛米控丹佛斯

SMZ110

SurfaceMountSilicon-ZenerDiodes(non-planartechnology)

Diotec

Diotec Semiconductor

SMZ110

2W110VZenerdiode

SUNMATESUNMATE electronic Co., LTD

森美特森美特半导体股份有限公司

PDF上传者:深圳市福田区吉富昌电子商行

SMZ110

SURFACEMOUNTSILICONZENERDIODES

Features ●Highpeakreversepowerdissipation ●CompleteVoltageRange3.6to200Volts ●Lowleakagecurrent ●Highreliability

SUNMATESUNMATE electronic Co., LTD

森美特森美特半导体股份有限公司

SMZ110

SMDZenerDiodes

Diotec

Diotec Semiconductor

SMZ110

SurfacemountSilicon-ZenerDiodes

VZ:1-200Volts PD:2Watts Features ◇CompleteVoltageRange1to200Volts ◇Highpeakreversepowerdissipation ◇Highreliability ◇Lowleakagecurrent ◇Pb/RoHSFree

LUGUANGShenzhen Luguang Electronic Technology Co., Ltd

鲁光电子深圳市鲁光电子科技有限公司

SMZ110B

SurfaceMountSilicon-ZenerDiodes

SurfaceMountSilicon-ZenerDiodes(non-planartechnology) •Maximumpowerdissipation2W •NominalZ-voltage10...200V •PlasticcaseMELFDO-213AB •Weightapprox.0.12g •PlasticmaterialhasULclassific

Diotec

Diotec Semiconductor

SNP-Y110

GeneralPurpose

SKYNET

Skynet Electronic Copyright

SODJ110A

SURFACEMOUNTTRANSIENTVOLTAGESUPPRESSORDIODE

Features Forsurfacemountedapplications Lowprofilepackage clampingcapability cycle):0.01 Hightemperaturesolderingguaranteed: 260℃/10seconds,atterminals 200Wpeakpulsepowercapabilitywitha10/1000μ Lowincrementalsurgeresistance,excellent s wavefrom,repetitionrate

SUNMATESUNMATE electronic Co., LTD

森美特森美特半导体股份有限公司

SODJ110ASH

SURFACEMOUNTTRANSIENTVOLTAGESUPPRESSOR

LRCLeshan Radio Company

乐山无线电乐山无线电股份有限公司

SODJ110A-SH

SURFACEMOUNTTRANSIENTVOLTAGESUPPESSORDIODE

SUNMATESUNMATE electronic Co., LTD

森美特森美特半导体股份有限公司

PDF上传者:深圳市福田区吉富昌电子商行

SODJ110A-SH

SURFACEMOUNTTRANSIENTVOLTAGESUPPRESSOR

LRCLeshan Radio Company

乐山无线电乐山无线电股份有限公司

SODJ110CA

SURFACEMOUNTTRANSIENTVOLTAGESUPPRESSORDIODE

Features Forsurfacemountedapplications Lowprofilepackage clampingcapability cycle):0.01 Hightemperaturesolderingguaranteed: 260℃/10seconds,atterminals 200Wpeakpulsepowercapabilitywitha10/1000μ Lowincrementalsurgeresistance,excellent s wavefrom,repetitionrate

SUNMATESUNMATE electronic Co., LTD

森美特森美特半导体股份有限公司

SODJ110CASH

SURFACEMOUNTTRANSIENTVOLTAGESUPPRESSOR

LRCLeshan Radio Company

乐山无线电乐山无线电股份有限公司

SODJ110CA-SH

SURFACEMOUNTTRANSIENTVOLTAGESUPPESSORDIODE

SUNMATESUNMATE electronic Co., LTD

森美特森美特半导体股份有限公司

PDF上传者:深圳市福田区吉富昌电子商行

供应商型号品牌批号封装库存备注价格
MDD
23+
NA
4840
瞬态抑制二极管
询价
更多SMPJ110供应商 更新时间2024-11-21 15:00:00