| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
MainProductCharacteristics | SILIKRONSilikron Semiconductor Co.,LTD. 新硅能微电子新硅能微电子(苏州)有限公司 | SILIKRON | ||
600VN-ChannelMOSFET | Good-Ark GOOD-ARK Electronics | Good-Ark | ||
MainProductCharacteristics | SILIKRONSilikron Semiconductor Co.,LTD. 新硅能微电子新硅能微电子(苏州)有限公司 | SILIKRON | ||
MainProductCharacteristics | SILIKRONSilikron Semiconductor Co.,LTD. 新硅能微电子新硅能微电子(苏州)有限公司 | SILIKRON | ||
600VN-ChannelMOSFET | Good-Ark GOOD-ARK Electronics | Good-Ark | ||
600VN-ChannelMOSFET | Good-Ark GOOD-ARK Electronics | Good-Ark | ||
MainProductCharacteristics | SILIKRONSilikron Semiconductor Co.,LTD. 新硅能微电子新硅能微电子(苏州)有限公司 | SILIKRON | ||
StarMOSTPowerMOSFET | Good-Ark GOOD-ARK Electronics | Good-Ark | ||
600VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
AdvancedPowerMOSFET FEATURES AvalancheRuggedTechnology RuggedGateOxideTechnology LowerInputCapacitance ImprovedGateCharge ExtendedSafeOperatingArea LowerLeakageCurrent:25mA(Max.)@VDS=600V LowerRDS(ON):3.892W(Typ.) | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
600VN-ChannelMOSFET TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchildsproprietary,planar,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhighenergypulseinth | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
600VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
N-Channel650V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
AdvancedPowerMOSFET AdvancedPowerMOSFET FEATURES AvalancheRuggedTechnology RuggedGateOxideTechnology LowerInputCapacitance ImprovedGateCharge ExtendedSafeOperatingArea LowerLeakageCurrent:25mA(Max.)@VDS=600V LowerRDS(ON):3.892W(Typ.) | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
N-Channel650V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
600VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planar,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhi | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
N-Channel650V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
昂斯美 |
23+ |
TO-220 |
10000 |
公司只做原装正品 |
询价 | ||
昂斯美 |
22+ |
TO-220 |
6000 |
十年配单,只做原装 |
询价 | ||
昂斯美 |
22+ |
TO-220 |
25000 |
只做原装进口现货,专注配单 |
询价 | ||
昂斯美 |
24+ |
TO-TO-220 |
12300 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
询价 | ||
国产 |
2023 |
ts-1807r-2026 |
4202 |
原厂代理渠道,正品保障 |
询价 | ||
ISA |
23+ |
2817 |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
询价 | ||
ISABELLENHUETTE HEUSLER |
22+ |
SMD |
518000 |
明嘉莱只做原装正品现货 |
询价 | ||
ISA |
2817 |
699839 |
集团化配单-有更多数量-免费送样-原包装正品现货-正规 |
询价 | |||
ISA/德国尹萨 |
23+ |
2817 |
5000 |
公司只做原装,可配单 |
询价 | ||
ISA |
23+ |
NA/ |
3555 |
原厂直销,现货供应,账期支持! |
询价 |
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