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SPA02N80C3

Isc N-Channel MOSFET Transistor

•FEATURES •WithTO-220Fpackage •Lowinputcapacitanceandgatecharge •Reducedswitchingandconductionlosses •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATIONS •Switchingapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

SPA02N80C3

Power MOSFET

FEATURES •DynamicdV/dtRating •RepetitiveAvalancheRated •IsolatedCentralMountingHole •FastSwitching •EaseofParalleling •SimpleDriveRequirements •ComplianttoRoHSDirective2002/95/EC

VBSEMIVBsemi Electronics Co.,Ltd

微碧半导体微碧半导体(台湾)有限公司

SPA02N80C3

Cool MOS Power Transistor

Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •P-TO-220-3-31:Fullyisolatedpackage(2500VAC;1minute)

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

SPA02N80C3

CoolMOSTM Power Transistor

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

SPA02N80C3

CoolMOSTM Power Transistor

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

SPA02N80C3_08

CoolMOSTM Power Transistor

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

SPA02N80C3_11

CoolMOSTM Power Transistor

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

SPD02N80C3

CoolMOSTMPowerTransistorFeaturesNewrevolutionaryhighvoltagetechnology

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

SPD02N80C3

CoolMOSPowerTransistor

Features •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoJEDEC0)fortargetapplications

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

SPD02N80C3

N-ChannelMOSFETTransistor

•DESCRITION •Highpeakcurrentcapability •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤2.7Ω •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

SPD02N80C3

CoolMOSTMPowerTransistor

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

SPP02N80C3

CoolMOSTMPowerTransistor

Features •Newrevolutionaryhighvoltagetechnology •Extremedv/dtrated •Highpeakcurrentcapability •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScompliant •Ultralowgatecharge •Ultraloweffectivecapacitances CoolMOSTM800Vdesignedfor:

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

SPP02N80C3

CoolMOSTMPowerTransistorFeaturesNewrevolutionaryhighvoltagetechnology

Features •Newrevolutionaryhighvoltagetechnology •Extremedv/dtrated •Highpeakcurrentcapability •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScompliant •Ultralowgatecharge •Ultraloweffectivecapacitances CoolMOSTM800Vdesignedfor:

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

SPP02N80C3

CoolMOSPowerTransistor

Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •P-TO-220-3-31:Fullyisolatedpackage(2500VAC;1minute)

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

详细参数

  • 型号:

    SPA02N80C3

  • 功能描述:

    MOSFET COOL MOS PWR TRANS 800V 2A

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
INFINEON/英飞凌
24+
TO-220F
20
只做原厂渠道 可追溯货源
询价
Infineon(英飞凌)
23+
TO-220
8145
支持大陆交货,美金交易。原装现货库存。
询价
INFINEON
10+
TO-220
5870
询价
24+
TO-220F
37800
询价
Infineon
23+
TO-220AB
7750
全新原装优势
询价
INFINEON
23+
TO-220F
7936
询价
Infineon
17+
TO-220F
6200
询价
Infineon
23+
TO-220F
5600
绝对全新原装!优势供货渠道!特价!请放心订购!
询价
INFINEON
0829+
TO-220F
50
原装正品长期供货,如假包赔包换 徐小姐13714450367
询价
INFINEON
1716+
TO-220F
8500
只做原装进口,假一罚十
询价
更多SPA02N80C3供应商 更新时间2024-11-22 16:36:00