首页 >SPA20N60CFD>规格书列表
零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
---|---|---|---|---|
SPA20N60CFD | Isc N-Channel MOSFET Transistor •FEATURES •WithTO-220Fpackage •Lowinputcapacitanceandgatecharge •Lowgateinputresistance •Reducedswitchingandconductionlosses •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation •APPLICATIONS •Switchingapplication | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | |
SPA20N60CFD | CoolMOS Power Transistor Features •Newrevolutionaryhighvoltagetechnology •Intrinsicfast-recoverybodydiode •Extremelylowreverserecoverycharge •Ultralowgatecharge •Extremedv/dtrated •Highpeakcurrentcapability •Periodicavalancherated •Qualifiedforindustrialgradeapplicationsaccording | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | |
SPA20N60CFD | CoolMOSTM Power Transistor Features New revolutionary high voltage technology Extreme dv/dt rated | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | |
SPA20N60CFD | CoolMOS Power Transistor | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | |
CoolMOSTM Power Transistor Features New revolutionary high voltage technology Extreme dv/dt rated | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
CoolMOS Power Transistor | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
iscN-ChannelMOSFETTransistor •DESCRIPTION •Ultralowgatecharge •Highpeakcurrentcapability •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.22Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
CoolMOS??PowerTransistorFeatureNewrevolutionaryhighvoltagetechnology Feature •Newrevolutionaryhighvoltagetechnology •WorldwidebestRDS(on)inTO220 •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Highpeakcurrentcapability •Intrinsicfast-recoverybodydiode •Extremelowreverserecoverycharge •Pb-freeleadplating; | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
N-ChannelMOSFETTransistor •DESCRIPTION •Ultralowgatecharge •Highpeakcurrentcapability •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.22Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
CoolMOS??PowerTransistorFeatureNewrevolutionaryhighvoltagetechnology | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
CoolMOS??PowerTransistorFeatureNewrevolutionaryhighvoltagetechnology | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
CoolMOS??PowerTransistor Feature •Newrevolutionaryhighvoltagetechnology •WorldwidebestRDS(on)inTO220 •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Highpeakcurrentcapability •Intrinsicfast-recoverybodydiode •Extremelowreverserecoverycharge •Pb-freeleadplating; | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
iscN-ChannelMOSFETTransistor •DESCRITION •Highpeakcurrentcapability •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤220mΩ •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
CoolMOS??PowerTransistor Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Highpeakcurrentcapability •Intrinsicfast-recoverybodydiode •Extremelowreverserecoverycharge | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
CoolMOSPowerTransistor | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
Highdv/dtandavalanchecapabilities | SILIKRONSilikron Semiconductor Co.,LTD. 新硅能微电子新硅能微电子(苏州)有限公司 | SILIKRON | ||
600VN-ChannelMOSFET | Good-Ark GOOD-ARK Electronics | Good-Ark | ||
N-channelPowerMOSFET | SEMIPOWERXian Semipower Electronic Technology Co., Ltd. 芯派科技芯派科技股份有限公司 | SEMIPOWER | ||
N-channelTO-3PMOSFET | SEMIPOWERXian Semipower Electronic Technology Co., Ltd. 芯派科技芯派科技股份有限公司 | SEMIPOWER | ||
N-channelPowerMOSFET | SEMIPOWERXian Semipower Electronic Technology Co., Ltd. 芯派科技芯派科技股份有限公司 | SEMIPOWER |
详细参数
- 型号:
SPA20N60CFD
- 功能描述:
MOSFET COOL MOS PWR TRANS 600V 20.7A
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶体管极性:
N-Channel
- 汲极/源极击穿电压:
650 V
- 闸/源击穿电压:
25 V
- 漏极连续电流:
130 A 电阻汲极/源极
- RDS(导通):
0.014 Ohms
- 配置:
Single
- 安装风格:
Through Hole
- 封装/箱体:
Max247
- 封装:
Tube
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
INFINEON |
23+ |
TO220F |
6996 |
只做原装正品现货 |
询价 | ||
INFINEON/英飞凌 |
21+23+ |
TSSOP28 |
10000 |
16年电子元件现货供应商 终端BOM表可配单提供样品 |
询价 | ||
Infineon(英飞凌) |
23+ |
TO-220 |
8145 |
支持大陆交货,美金交易。原装现货库存。 |
询价 | ||
INFINEON |
2024+ |
N/A |
70000 |
柒号只做原装 现货价秒杀全网 |
询价 | ||
Infineon |
17+ |
TO-220F |
6200 |
询价 | |||
INFINEO |
2020+ |
TO-220F |
250 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
询价 | ||
INFINEON |
2016+ |
TO-220F |
6000 |
公司只做原装,假一罚十,可开17%增值税发票! |
询价 | ||
INFINEON |
24+ |
TO-220F |
5000 |
只做原装公司现货 |
询价 | ||
INFINEON |
23+ |
NA |
19960 |
只做进口原装,终端工厂免费送样 |
询价 | ||
INFINEON |
23+ |
TO-220 |
11846 |
一级代理商现货批发,原装正品,假一罚十 |
询价 |
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