首页 >SPP04N60S5>规格书列表
零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
---|---|---|---|---|
SPP04N60S5 | N-Channel MOSFET Transistor •DESCRIPTION •Ultralowgatecharge •Ultraloweffectivecapacitance •Improvedtransconductance •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.95Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice per | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | |
SPP04N60S5 | Cool MOS??Power Transistor Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Ultraloweffectivecapacitances •Improvedtransconductance | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | |
SPP04N60S5 | New revolutionary high voltage technology Ultra low gate charge Extreme dv/dt rated | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | |
SPP04N60S5 | Cool MOS??Power Transistor Feature New revolutionary high voltage technology | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | |
New revolutionary high voltage technology Ultra low gate charge Extreme dv/dt rated | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
Cool MOS??Power Transistor Feature New revolutionary high voltage technology | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
CoolMOS??PowerTransistor Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Ultraloweffectivecapacitances •Improvedtransconductance •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoJEDEC0)fortargetapplications | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
CoolMOS??PowerTransistor Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Ultraloweffectivecapacitances •Improvedtransconductance •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoJEDEC0)fortargetapplications | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
N-Channel650V(D-S)PowerMOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体(台湾)有限公司 | VBSEMI | ||
iscN-ChannelMOSFETTransistor •FEATURES •WithTO-251(IPAK)packaging •Highspeedswitching •Easytouse •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation •APPLICATIONS •Powersupply •DC-DCconverters •Motorcontrol •Switchingapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
CoolMOS??PowerTransistor Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Ultraloweffectivecapacitances •Improvedtransconductance •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoJEDEC0)fortargetapplications | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
CoolMOSPowerTransistor | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon |
详细参数
- 型号:
SPP04N60S5
- 功能描述:
MOSFET COOL MOS N-CH 600V 4.5A
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶体管极性:
N-Channel
- 汲极/源极击穿电压:
650 V
- 闸/源击穿电压:
25 V
- 漏极连续电流:
130 A 电阻汲极/源极
- RDS(导通):
0.014 Ohms
- 配置:
Single
- 安装风格:
Through Hole
- 封装/箱体:
Max247
- 封装:
Tube
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
Infineon(英飞凌) |
23+ |
TO-220 |
7793 |
支持大陆交货,美金交易。原装现货库存。 |
询价 | ||
Infineon |
17+ |
TO-220 |
6200 |
询价 | |||
INFINEON |
23+ |
T0-220 |
7936 |
询价 | |||
INF |
23+ |
TO-220 |
5000 |
原装正品,假一罚十 |
询价 | ||
INFINEON |
23+ |
NA |
19960 |
只做进口原装,终端工厂免费送样 |
询价 | ||
INFINEON |
22+ |
TO-220 |
48868 |
原装现货库存.价格优势 |
询价 | ||
INFINE0N |
23+ |
TO-220-3 |
11846 |
一级代理商现货批发,原装正品,假一罚十 |
询价 | ||
INFINEON |
23+ |
TO-220 |
6000 |
专做原装正品,假一罚百! |
询价 | ||
INFINEO |
21+ |
TO220 |
12588 |
原装现货价格优势 |
询价 | ||
Infineon/英飞凌 |
22+ |
TO220 |
30426 |
原装正品现货 |
询价 |
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