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SPP04N60S5

N-Channel MOSFET Transistor

•DESCRIPTION •Ultralowgatecharge •Ultraloweffectivecapacitance •Improvedtransconductance •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.95Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice per

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

SPP04N60S5

Cool MOS??Power Transistor

Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Ultraloweffectivecapacitances •Improvedtransconductance

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

SPP04N60S5

New revolutionary high voltage technology Ultra low gate charge Extreme dv/dt rated

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

SPP04N60S5

Cool MOS??Power Transistor Feature New revolutionary high voltage technology

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

SPP04N60S5_07

New revolutionary high voltage technology Ultra low gate charge Extreme dv/dt rated

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

SPP04N60S5_09

Cool MOS??Power Transistor Feature New revolutionary high voltage technology

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

SPPB04N60S5

CoolMOS??PowerTransistor

Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Ultraloweffectivecapacitances •Improvedtransconductance •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoJEDEC0)fortargetapplications

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

SPU04N60S5

CoolMOS??PowerTransistor

Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Ultraloweffectivecapacitances •Improvedtransconductance •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoJEDEC0)fortargetapplications

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

SPU04N60S5

N-Channel650V(D-S)PowerMOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半导体微碧半导体(台湾)有限公司

SPU04N60S5

iscN-ChannelMOSFETTransistor

•FEATURES •WithTO-251(IPAK)packaging •Highspeedswitching •Easytouse •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation •APPLICATIONS •Powersupply •DC-DCconverters •Motorcontrol •Switchingapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

SPU04N60S5

CoolMOS??PowerTransistor

Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Ultraloweffectivecapacitances •Improvedtransconductance •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoJEDEC0)fortargetapplications

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

SPU04N60S5

CoolMOSPowerTransistor

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

详细参数

  • 型号:

    SPP04N60S5

  • 功能描述:

    MOSFET COOL MOS N-CH 600V 4.5A

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
Infineon(英飞凌)
23+
TO-220
7793
支持大陆交货,美金交易。原装现货库存。
询价
Infineon
17+
TO-220
6200
询价
INFINEON
23+
T0-220
7936
询价
INF
23+
TO-220
5000
原装正品,假一罚十
询价
INFINEON
23+
NA
19960
只做进口原装,终端工厂免费送样
询价
INFINEON
22+
TO-220
48868
原装现货库存.价格优势
询价
INFINE0N
23+
TO-220-3
11846
一级代理商现货批发,原装正品,假一罚十
询价
INFINEON
23+
TO-220
6000
专做原装正品,假一罚百!
询价
INFINEO
21+
TO220
12588
原装现货价格优势
询价
Infineon/英飞凌
22+
TO220
30426
原装正品现货
询价
更多SPP04N60S5供应商 更新时间2024-11-25 16:12:00