首页 >SPP11N80C3>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
SPP11N80C3 | Cool MOS Power Transistor Features •Newrevolutionaryhighvoltagetechnology •Extremedv/dtrated •Highpeakcurrentcapability •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScompliant •Ultralowgatecharge •Ultraloweffectivecapacitances CoolMOSTM800Vdesignedfor: | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | |
SPP11N80C3 | CoolMOSTM Power Transistor Features •Newrevolutionaryhighvoltagetechnology •Extremedv/dtrated •Highpeakcurrentcapability •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScompliant •Ultralowgatecharge •Ultraloweffectivecapacitances CoolMOSTM800Vdesignedfor: | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | |
SPP11N80C3 | Isc N-Channel MOSFET Transistor •FEATURES •Ultraloweffectivecapacitances •Lowgatecharge •Improvedtransconductance •Lowgatedrivepowerloss •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATIONS •Switchingapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | |
SPP11N80C3 | Cool MOS??Power Transistor CoolMOS™PowerTransistor Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Ultraloweffectivecapacitances •Improvedtransconductance •P-TO-220-3-31:Fullyisolatedpackage(2500VAC;1minute) | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | |
SPP11N80C3 | Cool MOS??Power Transistor | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | |
Cool MOS Power Transistor Features •Newrevolutionaryhighvoltagetechnology •Extremedv/dtrated •Highpeakcurrentcapability •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScompliant •Ultralowgatecharge •Ultraloweffectivecapacitances CoolMOSTM800Vdesignedfor: | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
CoolMOSTM Power Transistor Features •Newrevolutionaryhighvoltagetechnology •Extremedv/dtrated •Highpeakcurrentcapability •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScompliant •Ultralowgatecharge •Ultraloweffectivecapacitances CoolMOSTM800Vdesignedfor: | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
Cool MOS??Power Transistor | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
Newrevolutionaryhighvoltagetechnology | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
NewrevolutionaryhighvoltagetechnologyUltralowgatechargeExtremedv/dtrated | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
CoolMOSPowerTransistor Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon |
详细参数
- 型号：
SPP11N80C3
- 功能描述：
MOSFET COOL MOS N-CH 800V 11A
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INF |
24+ |
TO220 |
5649 |
原装正品现货库存价优，徐小姐13714450367，QQ 2850151739 |
询价 | ||
INFINEON |
24+ |
TO-220 |
15000 |
原装正品现货 |
询价 | ||
INFINEON |
24+ |
TO-220 |
10000 |
进口原装现货 |
询价 | ||
infieon |
18+ |
TO-220 |
2869 |
进口原装优势供应QQ3171516190 |
询价 | ||
INFINEON |
11+ |
TO-220 |
6000 |
原装正品现货 |
询价 | ||
INFINEON |
23+ |
TO-220F |
65400 |
询价 | |||
IR |
2020+ |
TO-220 |
32000 |
原装正品,诚信经营。 |
询价 | ||
INFINEON |
18+ |
TO220 |
9800 |
一级代理/全新原装现货/长期供应! |
询价 | ||
INFINEON/英飞凌 |
2021+ |
SMD |
18078 |
原装进口假一罚十 |
询价 | ||
INFINEON |
20+ |
TO-220 |
50000 |
询价 |
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