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SPW16N50C3

Cool MOS Power Transistor

CoolMOS™PowerTransistor Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Ultraloweffectivecapacitances •Improvedtransconductance •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoJEDEC0)fo

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

SPW16N50C3

isc N-Channel MOSFET Transistor

•DESCRITION •ImprovedTransconductance •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤280mΩ •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

SPW16N50C3

COOL MOS POWER TRANSISTOR

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

SPW16N50C3_08

COOL MOS POWER TRANSISTOR

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

16N50C3

NewrevolutionaryhighvoltagetechnologyUltralowgatechargePeriodicavalancherated

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

ISPP16N50C3

N-ChannelMOSFETTransistor

•DESCRITION •Newrevolutionaryhighvoltagetechnology •Ultraloweffectivecapacitance •FEATURES •Staticdrain-sourceon-resistance:RDS(on)≤280mΩ •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandrelia

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

ISPW16N50C3

iscN-ChannelMOSFETTransistor

•DESCRITION •ImprovedTransconductance •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤280mΩ •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

SPA16N50C3

IscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

SPA16N50C3

NewrevolutionaryhighvoltagetechnologyUltralowgatechargePeriodicavalancherated

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

SPA16N50C3

NewrevolutionaryhighvoltagetechnologyUltralowgatechargePeriodicavalancherated

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

SPA16N50C3

CoolMOS??PowerTransistor

Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Ultraloweffectivecapacitances •Improvedtransconductance •P-TO-220-3-31:Fullyisolatedpackage(2500VAC;1minute)

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

SPB16N50C3

CoolMOS??PowerTransistor

Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Ultraloweffectivecapacitances •Improvedtransconductance •P-TO-220-3-31:Fullyisolatedpackage(2500VAC;1minute)

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

SPB16N50C3

CoolMOSPowerTransistor

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

SPI16N50C3

NewrevolutionaryhighvoltagetechnologyUltralowgatechargePeriodicavalancherated

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

SPI16N50C3

NewrevolutionaryhighvoltagetechnologyUltralowgatechargePeriodicavalancherated

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

SPI16N50C3

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

SPI16N50C3

CoolMOS??PowerTransistor

Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Ultraloweffectivecapacitances •Improvedtransconductance •P-TO-220-3-31:Fullyisolatedpackage(2500VAC;1minute)

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

SPP16N50C3

N-ChannelMOSFETTransistor

•DESCRITION •Newrevolutionaryhighvoltagetechnology •Ultraloweffectivecapacitance •FEATURES •Staticdrain-sourceon-resistance:RDS(on)≤280mΩ •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandrelia

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

SPP16N50C3

NewrevolutionaryhighvoltagetechnologyUltralowgatechargePeriodicavalancherated

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

SPP16N50C3

NewrevolutionaryhighvoltagetechnologyUltralowgatechargePeriodicavalancherated

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

详细参数

  • 型号:

    SPW16N50C3

  • 功能描述:

    MOSFET COOL MOS N-CH 560V 16A

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
INFINEON/英飞凌
24+
TO247
8950
BOM配单专家,发货快,价格低
询价
INFINEON
23+
TO247
6996
只做原装正品现货
询价
INFINEON/英飞凌
22+
TO-247
50000
我司100%原装正品现货,现货众多欢迎加微信
询价
Infineon(英飞凌)
23+
N/A
12000
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
Infineon(英飞凌)
23+
TO-247
7962
支持大陆交货,美金交易。原装现货库存。
询价
INFINEON
2023
TO-247
2580
原厂代理渠道,正品保障
询价
INFINEON
2024+
N/A
70000
柒号只做原装 现货价秒杀全网
询价
INFINEON
2022
TO-247
6800
原厂原装正品,价格超越代理
询价
INFINEON
100
原装现货,价格优惠
询价
INFINEON
23+
TO247
8820
全新原装优势
询价
更多SPW16N50C3供应商 更新时间2024-11-22 16:36:00