首页 >SPW11N60S5>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
SPW11N60S5 | isc N-Channel MOSFET Transistor •DESCRITION •Improvedtransconductance •FEATURES •Staticdrain-sourceon-resistance:RDS(on)≤380mΩ •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | |
SPW11N60S5 | Cool MOS??Power Transistor Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Ultraloweffectivecapacitances •Improvedtransconductance •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoJEDEC0)fortargetapplications | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | |
SPW11N60S5 | Cool MOS??Power Transistor | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | |
Cool MOS??Power Transistor | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
N-Channel650V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
CoolMOS??PowerTransistor CoolMOS™PowerTransistor Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Ultraloweffectivecapacitances •Improvedtransconductance | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
iscN-ChannelMOSFETTransistor •DESCRITION •Improvedtransconductance •FEATURES •Staticdrain-sourceon-resistance:RDS(on)≤380mΩ •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-Channel650V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
IscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
CoolMOS??PowerTransistor CoolMOS™PowerTransistor Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Ultraloweffectivecapacitances •Improvedtransconductance | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
NewrevolutionaryhighvoltagetechnologyUltralowgatecharge | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
CoolMOS??PowerTransistorFeatureNewrevolutionaryhighvoltagetechnology | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
CoolMOS??PowerTransistor CoolMOS™PowerTransistor Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Ultraloweffectivecapacitances •Improvedtransconductance | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-Channel650V(D-S)MOSFET FEATURES •Reducedtrr,Qrr,andIRRM •Lowfigure-of-merit(FOM)RonxQg •Lowinputcapacitance(Ciss) •LowswitchinglossesduetoreducedQrr •Ultralowgatecharge(Qg) •Avalancheenergyrated(UIS) | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
iscN-ChannelMOSFETTransistor •DESCRITION •reliabledeviceforuseinawidevarietyofapplications •FEATURES •Staticdrain-sourceon-resistance:RDS(on)≤3mΩ •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
CoolMOS??PowerTransistorFeatureNewrevolutionaryhighvoltagetechnology | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
CoolMOS??PowerTransistor CoolMOS™PowerTransistor Feature •Newrevolutionaryhighvoltagetechnology •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Ultraloweffectivecapacitances •Improvedtransconductance | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon |
详细参数
- 型号：
SPW11N60S5
- 功能描述：
MOSFET COOL MOS N-CH 600V 11A
- RoHS：
否
- 制造商：
STMicroelectronics
- 晶体管极性：
N-Channel
- 汲极/源极击穿电压：
650 V
- 闸/源击穿电压：
25 V
- 漏极连续电流：
130 A 电阻汲极/源极
- RDS（导通）：
0.014 Ohms
- 配置：
Single
- 安装风格：
Through Hole
- 封装/箱体：
Max247
- 封装：
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
英飞凌 |
2020+ |
TO247 |
9880 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
询价 | ||
INFINEON/英飞凌 |
21+ |
TO-247 |
50000 |
原装现货/假一赔十/支持第三方检验 |
询价 | ||
英飞翎 |
17+ |
TO-247 |
31518 |
原装正品 可含税交易 |
询价 | ||
INFINEON/英飞凌 |
21+23+ |
TO247 |
13888 |
16年电子元件现货供应商 终端BOM表可配单提供样品 |
询价 | ||
INFINEON |
23+ |
TO-247 |
7936 |
询价 | |||
Infineon |
23+ |
TO-247 |
7750 |
全新原装优势 |
询价 | ||
INF |
16+ |
TO-3P |
10000 |
全新原装现货 |
询价 | ||
INF |
2020+ |
TO-3P |
350000 |
100%进口原装正品公司现货库存 |
询价 | ||
Infineon |
18+ |
NA |
3000 |
进口原装正品优势供应QQ3171516190 |
询价 | ||
INFINEON |
23+ |
NA |
19960 |
只做进口原装,终端工厂免费送样 |
询价 |
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