首页 >SPW35N60CFD>规格书列表
零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
---|---|---|---|---|
SPW35N60CFD | N-Channel MOSFET Transistor •DESCRITION •Highpeakcurrentcapability •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤118mΩ •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | |
SPW35N60CFD | CoolMOS Power Transistor Features •Newrevolutionaryhighvoltagetechnology •Intrinsicfast-recoverybodydiode •Extremelylowreverserecoverycharge •Ultralowgatecharge •Extremedv/dtrated •Highpeakcurrentcapability •Periodicavalancherated | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | |
SPW35N60CFD | CoolMOSTM Power Transistor | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | |
CoolMOSTM Power Transistor | InfineonInfineon Technologies AG 英飞凌英飞凌科技股份公司 | Infineon | ||
35A600VN-channelenhancedfieldeffecttransistor | YFWDIODEDONGGUAN YOU FENG WEI ELECTRONICS CO., LTD 佑风微电子广东佑风微电子有限公司 | YFWDIODE | ||
N-ChannelEnhancementModeMOSFET | DACO DACO SEMICONDUCTOR CO.,LTD. | DACO | ||
N-ChannelEnhancementModeMOSFET | DACO DACO SEMICONDUCTOR CO.,LTD. | DACO | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=35A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=79mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
600VN-ChannelMOSFET Description SuperFET™isFarichild’sproprietary,newgenerationofhighvoltageMOSFETfamilythatisutilizinganadvancedchargebalancemechanismforoutstandinglowon-resistanceandlowergatechargeperformance. Features •650V@TJ=150°C •Typ.RDS(on)=0.079Ω •Ultralow | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
DESIGN/PROCESSCHANGENOTIFICATION Description SuperFET®IIMOSFETisFairchildSemiconductor®’sfirstgenerationofhighvoltagesuper-junction(SJ)MOSFETfamilythatisutilizingchargebalancetechnologyforoutstandinglowon-resistanceandlowergatechargeperformance.Thisadvancedtechnologyistailoredtominimizeconducti | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
DESIGN/PROCESSCHANGENOTIFICATION Description SuperFET®IIMOSFETisFairchildSemiconductor®’sfirstgenerationofhighvoltagesuper-junction(SJ)MOSFETfamilythatisutilizingchargebalancetechnologyforoutstandinglowon-resistanceandlowergatechargeperformance.Thisadvancedtechnologyistailoredtominimizeconducti | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
N-ChannelSuperFET짰MOSFET Description SuperFET®MOSFETisFairchildSemiconductor®’sfirstgenerationofhighvoltagesuper-junction(SJ)MOSFETfamilythatisutilizingchargebalancetechnologyforoutstandinglowon-resistanceandlowergatechargeperformance.Thistechnologyistailoredtominimizeconductionloss, | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
DiscreteIGBT(High-SpeedVseries)600V/35A Features Lowpowerloss Lowswitchingsurgeandnoise Highreliability,highruggedness(RBSOA,SCSOAetc.) Applications Uninterruptiblepowersupply Powercoditionner Powerfactorcorrectioncircuit | FujiFuji Electric 富士电机富士电机株式会社 | Fuji | ||
DiscreteIGBT(High-SpeedVseries)600V/35A 600V/35A Features Lowpowerloss Lowswitchingsurgeandnoise Highreliability,highruggedness(RBSOA,SCSOAetc.) Applications Uninterruptiblepowersupply Powercoditionner Powerfactorcorrectioncircuit | FujiFuji Electric 富士电机富士电机株式会社 | Fuji | ||
N-ChannelEnhancementModeMOSFET | ICEMOS Icemos Technology | ICEMOS | ||
N-ChannelEnhancementModeMOSFET | MICROSS Micross Components | MICROSS | ||
N-ChannelMOSFETTransistor •DESCRITION •Highpeakcurrentcapability •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤118mΩ •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
IGBTwithoptionalDiode HighSpeed,LowSaturationVoltage Features ●NPTIGBTtechnology ●lowswitchinglosses ●lowtailcurrent ●nolatchup ●shortcircuitcapability ●positivetemperaturecoefficientforeasyparalleling ●MOSinput,voltagecontrolled ●optionalultrafastdiode ●Internationalstandard | IXYS IXYS Corporation | IXYS | ||
IGBTwithoptionalDiode HighSpeed,LowSaturationVoltage Features ●NPTIGBTtechnology ●lowswitchinglosses ●lowtailcurrent ●nolatchup ●shortcircuitcapability ●positivetemperaturecoefficientforeasyparalleling ●MOSinput,voltagecontrolled ●optionalultrafastdiode ●Internationalstandard | IXYS IXYS Corporation | IXYS | ||
ESeriesPowerMOSFET | VishayVishay Siliconix 威世科技威世科技半导体 | Vishay |
详细参数
- 型号:
SPW35N60CFD
- 功能描述:
MOSFET COOL MOS N-CH 600V 34.1A
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶体管极性:
N-Channel
- 汲极/源极击穿电压:
650 V
- 闸/源击穿电压:
25 V
- 漏极连续电流:
130 A 电阻汲极/源极
- RDS(导通):
0.014 Ohms
- 配置:
Single
- 安装风格:
Through Hole
- 封装/箱体:
Max247
- 封装:
Tube
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
INFINEON |
23+ |
TO-247 |
95260 |
询价 | |||
INFINEON |
2020+ |
TO247 |
18600 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
询价 | ||
Infineon(英飞凌) |
23+ |
N/A |
12000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
INFINEON TECHNOLOGIES AG |
23+ |
SMD |
918000 |
明嘉莱只做原装正品现货 |
询价 | ||
INFINEON |
23+ |
NA |
15000 |
原装现货,实单价格可谈 |
询价 | ||
Infineon(英飞凌) |
23+ |
TO-247 |
7962 |
支持大陆交货,美金交易。原装现货库存。 |
询价 | ||
INFINEON |
2023 |
TO-247 |
2580 |
原厂代理渠道,正品保障 |
询价 | ||
INFINEON |
2024+ |
N/A |
70000 |
柒号只做原装 现货价秒杀全网 |
询价 | ||
INFINEON |
10+ |
TO-247 |
5000 |
全新原装现货 |
询价 | ||
Infineon |
23+ |
TO-247 |
1500 |
绝对全新原装!优势供货渠道!特价!请放心订购! |
询价 |
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