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SPW52N50C3

N-Channel MOSFET Transistor

•DESCRITION •ImprovedTransconductance •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤70mΩ •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

SPW52N50C3

Cool MOS??Power Transistor

Feature •Newrevolutionaryhighvoltagetechnology •WorldwidebestRDS(on)inTO247 •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Ultraloweffectivecapacitances •Improvedtransconductance

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

SPW52N50C3

CoolMOS??Power Transistor

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

SPW52N50C3

N-Channel 500V (D-S) Super Junction Power MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半导体微碧半导体(台湾)有限公司

SPW52N50C3_08

CoolMOS??Power Transistor

InfineonInfineon Technologies AG

英飞凌英飞凌科技股份公司

ISPW52N50C3

N-ChannelMOSFETTransistor

•DESCRITION •ImprovedTransconductance •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤70mΩ •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

详细参数

  • 型号:

    SPW52N50C3

  • 功能描述:

    MOSFET COOL MOS N-CH 560V 52A

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
INFINEON/英飞凌
21+
TO-247
6850
只做原装正品假一赔十!正规渠道订货!
询价
INFINEON/英飞凌
22+
TO-247
9600
原装现货,优势供应,支持实单!
询价
INFINEO
23+
TO-247
8800
只做原装正品现货
询价
INFINEON/英飞凌
24+
TO-247
2
只做原厂渠道 可追溯货源
询价
INFINEON
23+
TO247
8820
全新原装优势
询价
INF
23+
TO-247
5000
原装正品,假一罚十
询价
INFINEON
23+
TO-247
7936
询价
Infineon
18+
NA
3000
进口原装正品优势供应QQ3171516190
询价
INFINEO
17+
TO-247
9888
只做原装,现货库存
询价
INFINEON
23+
NA
19960
只做进口原装,终端工厂免费送样
询价
更多SPW52N50C3供应商 更新时间2024-11-22 18:38:00