| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
SSG9962 | N-Channel Enhancement Mode Power Mos.FET | SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司 | SECOS | |
SSG9962 | Dual N-Channel 60 V (D-S) 175 째C MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | |
Electronic,2C#20StrTC,PVC-NYLIns,OATCBrd,PVCJkt ProductDescription Electronic,2Conductor20AWG(19x32)TinnedCopper,PVC-NYLInsulation,OverallTinnedCopperBraid(90)Shield,PVCOuterJacket | BELDENBelden Inc. 百通电缆设计科技有限公司 | BELDEN | ||
DualN-Channel60V(D-S)175째CMOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
DualN-Channel60V(D-S)175째CMOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
N-CHANNELENHANCEMENTMODEPOWERMOSFET Description AdvancedPowerMOSFETsfromAPECprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcosteffectiveness. TheTO-252packageiswidelypreferredforallcommercial-industrialsurfacemountapplicationsandsuitedforlowvo | A-POWERAdvanced Power Electronics Corp. 富鼎先进电子富鼎先进电子股份有限公司 | A-POWER | ||
DualN-Channel60V(D-S)175째CMOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
DualN-Channel60V(D-S)175째CMOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
DualN-Channel60V(D-S)175째CMOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
DualN-Channel60V(D-S)175째CMOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
CAT.5EFTPPATCHCABLE | ASSMANNASSMANN WSW COMPONENTS ASSMANN WSW组件有限公司 | ASSMANN | ||
N-CHANNELENHANCEMENTMODEPOWERMOSFET Description AdvancedPowerMOSFETsfromAPECprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,ultralowon-resistanceandcost-effectiveness. ▼LowOn-resistance ▼SingleDriveRequirement ▼PDIP-8Package | A-POWERAdvanced Power Electronics Corp. 富鼎先进电子富鼎先进电子股份有限公司 | A-POWER | ||
N-CHANNELENHANCEMENTMODEPOWERMOSFET Description AdvancedPowerMOSFETsfromAPECprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-252packageiswidelypreferredforcommercial-industrialsurfacemountapplicationsandsuitedforlowvoltag | A-POWERAdvanced Power Electronics Corp. 富鼎先进电子富鼎先进电子股份有限公司 | A-POWER | ||
N-ChannelMOSFETusesadvancedtrenchtechnology | DOINGTERSHENZHEN DOINGTER SEMICONDUCTOR CO., LTD 杜因特深圳市杜因特半导体有限公司 | DOINGTER | ||
FastSwitchingCharacteristic | A-POWERAdvanced Power Electronics Corp. 富鼎先进电子富鼎先进电子股份有限公司 | A-POWER | ||
N-CHANNELENHANCEMENTMODEPOWERMOSFET Description AdvancedPowerMOSFETsfromAPECprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcosteffectiveness. TheTO-252packageiswidelypreferredforcommercial-industrialsurfacemountapplicationsandsuitedforlowvo | A-POWERAdvanced Power Electronics Corp. 富鼎先进电子富鼎先进电子股份有限公司 | A-POWER | ||
FastSwitchingCharacteristic | A-POWERAdvanced Power Electronics Corp. 富鼎先进电子富鼎先进电子股份有限公司 | A-POWER | ||
N-CHANNELENHANCEMENTMODEPOWERMOSFET Description AdvancedPowerMOSFETsfromAPECprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,ultralowon-resistanceandcost-effectiveness. TheSO-8packageiswidelypreferredforcommercial-industrialsurfacemountapplicationsandsuitedforlowvo | A-POWERAdvanced Power Electronics Corp. 富鼎先进电子富鼎先进电子股份有限公司 | A-POWER | ||
N-CHANNELENHANCEMENTMODEPOWERMOSFET Description AdvancedPowerMOSFETsfromAPECprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,ultralowon-resistanceandcost-effectiveness. TheSO-8packageiswidelypreferredforcommercial-industrialsurfacemountapplicationsandsuitedforlowvo | A-POWERAdvanced Power Electronics Corp. 富鼎先进电子富鼎先进电子股份有限公司 | A-POWER | ||
N-CHANNELENHANCEMENTMODEPOWERMOSFET Description AdvancedPowerMOSFETsfromAPECprovidethedesignerwiththebestcombinationoffastswitching,ruggedizeddevicedesign,lowon-resistanceandcost-effectiveness. TheTO-220packageiswidelypreferredforcommercial-industrialpowerapplicationsandsuitedforlowvoltageapplic | A-POWERAdvanced Power Electronics Corp. 富鼎先进电子富鼎先进电子股份有限公司 | A-POWER |
详细参数
- 型号：
SSG9962
- 制造商：
SECOS
- 制造商全称：
SeCoS Halbleitertechnologie GmbH
- 功能描述：
N-Channel Enhancement Mode Power Mos.FET
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Bychip |
23+ |
SOP8 |
10000 |
高品质替代,技术支持,参数选型 |
询价 | ||
SeCoS |
23+ |
SOP-8 |
63000 |
原装正品现货 |
询价 | ||
VB |
21+ |
SOP-8 |
10000 |
原装现货假一罚十 |
询价 | ||
SECOS |
2016+ |
SOP8 |
6528 |
只做进口原装现货!假一赔十! |
询价 | ||
SECOS |
07+PBF |
SOP8 |
346 |
现货 |
询价 | ||
SECOS |
23+ |
SOP8 |
10800 |
只做原装 欢迎咨询 |
询价 | ||
Secos |
20+ |
SOP-8 |
38900 |
原装优势主营型号-可开原型号增税票 |
询价 | ||
SECOS |
23+ |
SOP-8 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
Secos |
SOP-8 |
22+ |
6000 |
十年配单,只做原装 |
询价 | ||
SECOS |
24+23+ |
SOP-8 |
12580 |
16年现货库存供应商终端BOM表可配单提供样品 |
询价 |
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