| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
TC1N60P | 500 mW DO-35 Hermetically Sealed Glass Small Signal Schottky Diodes | TAK_CHEONGTak Cheong Electronics (Holdings) Co.,Ltd 德昌电子德昌电子（集团）有限公司 | TAK_CHEONG | |
TC1N60P | 500 mW DO-35 Hermetically Sealed Glass Small Signal Schottky Diodes | TAK_CHEONGTak Cheong Electronics (Holdings) Co.,Ltd 德昌电子德昌电子（集团）有限公司 | TAK_CHEONG | |
N-Channel650V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
N-ChannelPowerEnhancementModeMOSFET VDS=600V ID=1A RDS(on),Vgs@10V,Ids@0.6A=8Ω GeneralDescription TheTSM1N60isusedanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegradingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergy | TSCTaiwan Semiconductor Company, Ltd 台湾半导体台湾半导体股份有限公司 | TSC | ||
N-ChannelPowerEnhancementModeMOSFET VDS=600V ID=1A RDS(on),Vgs@10V,Ids@0.6A=8Ω GeneralDescription TheTSM1N60isusedanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegradingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergy | TSCTaiwan Semiconductor Company, Ltd 台湾半导体台湾半导体股份有限公司 | TSC | ||
N-ChannelPowerEnhancementModeMOSFET VDS=600V ID=1A RDS(on),Vgs@10V,Ids@0.6A=8Ω GeneralDescription TheTSM1N60isusedanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegradingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergy | TSCTaiwan Semiconductor Company, Ltd 台湾半导体台湾半导体股份有限公司 | TSC | ||
N-Channel650V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
N-ChannelPowerEnhancementModeMOSFET GeneralDescription TheTSM1N60Lisusedanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegradingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergyinavalancheandcommutationmodes.Thenewenergyefficien | TSCTaiwan Semiconductor Company, Ltd 台湾半导体台湾半导体股份有限公司 | TSC | ||
600VN-ChannelPowerMOSFET | TSCTaiwan Semiconductor Company, Ltd 台湾半导体台湾半导体股份有限公司 | TSC | ||
N-ChannelPowerEnhancementModeMOSFET GeneralDescription TheTSM1N60Lisusedanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegradingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergyinavalancheandcommutationmodes.Thenewenergyefficien | TSCTaiwan Semiconductor Company, Ltd 台湾半导体台湾半导体股份有限公司 | TSC | ||
600VN-ChannelPowerMOSFET | TSCTaiwan Semiconductor Company, Ltd 台湾半导体台湾半导体股份有限公司 | TSC | ||
N-ChannelPowerEnhancementModeMOSFET GeneralDescription TheTSM1N60Lisusedanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegradingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergyinavalancheandcommutationmodes.Thenewenergyefficien | TSCTaiwan Semiconductor Company, Ltd 台湾半导体台湾半导体股份有限公司 | TSC | ||
600VN-ChannelPowerMOSFET | TSCTaiwan Semiconductor Company, Ltd 台湾半导体台湾半导体股份有限公司 | TSC | ||
N-Channel650V(D-S)MOSFET FEATURES •LowGateChargeQgResultsinSimpleDrive Requirement •ImprovedGate,AvalancheandDynamicdV/dt Ruggedness •FullyCharacterizedCapacitanceandAvalancheVoltage andCurrent •ComplianttoRoHSdirective2002/95/EC | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
600VN-ChannelPowerMOSFET | TSCTaiwan Semiconductor Company, Ltd 台湾半导体台湾半导体股份有限公司 | TSC | ||
N-ChannelPowerEnhancementModeMOSFET GeneralDescription TheTSM1N60Sisusedanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegradingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergyinavalancheandcommutationmodes.Thenewenergye | TSCTaiwan Semiconductor Company, Ltd 台湾半导体台湾半导体股份有限公司 | TSC | ||
600VN-ChannelPowerMOSFET | TSCTaiwan Semiconductor Company, Ltd 台湾半导体台湾半导体股份有限公司 | TSC | ||
600VN-ChannelPowerMOSFET | TSCTaiwan Semiconductor Company, Ltd 台湾半导体台湾半导体股份有限公司 | TSC | ||
N-Channel650V(D-S)MOSFET | VBSEMIVBsemi Electronics Co.,Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
SiliconN-ChannelMOSFET | WinsemiShenzhen Wenxian Microelectronics Co., Ltd 稳先微电子深圳市稳先微电子有限公司 | Winsemi |
详细参数
- 型号：
TC1N60P
- 制造商：
TAK_CHEONG
- 制造商全称：
Tak Cheong Electronics(Holdings) Co.,Ltd
- 功能描述：
500 mW DO-35 Hermetically Sealed Glass Small Signal Schottky Diodes
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
JXND/嘉兴南电 |
DO-35 |
90000 |
集团化配单-有更多数量-免费送样-原包装正品现货-正规 |
询价 | |||
ONSEMI |
NA |
8560 |
一级代理 原装正品假一罚十价格优势长期供货 |
询价 | |||
16+ |
NA |
8800 |
原装现货,货真价优 |
询价 | |||
2020+ |
原厂封装 |
35000 |
100%进口原装正品公司现货库存 |
询价 | |||
20+ |
5440 |
全新现货热卖中欢迎查询 |
询价 | ||||
2023+ |
80000 |
一级代理/分销渠道价格优势 十年芯程一路只做原装正品 |
询价 | ||||
2023+ |
5440 |
进口原装现货 |
询价 | ||||
05+ |
5440 |
优势货源原装正品 |
询价 | ||||
N/A |
2046+ |
9852 |
只做原装正品现货!或订货假一赔十! |
询价 | |||
N/A |
23+ |
NA |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
询价 |
相关规格书
更多- TC1N746A
- TC1N747A
- TC1N749A
- TC1N751A
- TC1N753A
- TC1N755A
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- TC20
- TC-20.000MBD-T
- TC-20.000MCD-T
- TC-20.000MDD-T
- TC-200
- TC2001
- TC2002A
- TC-200A
- TC-200-CFC-416A-622.08MHZ
- TC-200-CFC-416B-311.04MHZ
- TC-200-CFC-416B-625.00MHZ
相关库存
更多- TC1N746A_10
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- TC-20.000MBE-T
- TC-20.000MCE-T
- TC-20.000MDE-T
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- TC2001-CSZ
- TC2002AL
- TC-200-CFC-416A-311.04MHZ
- TC-200-CFC-416A-625.00MHZ
- TC-200-CFC-416B-622.08MHZ
- TC-200-CFF-416A-311.04MHZ