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TC511000J

SILICON GATE CMOS

DESCRIPTION TheTC511000P/J/Zisthenewgenerationdynamic RAMorganized1,048,576wordsby1bit.The TC511000P/J/ZutilizesTOSHIBA'sCMOSSilicongate processtechnologyaswellasadvancedcircuittechniques toprovidewideoperatingmargins,bothinternallyandto thesystemuser.Mult

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TC511000J-10

SILICON GATE CMOS

DESCRIPTION TheTC511000P/J/Zisthenewgenerationdynamic RAMorganized1,048,576wordsby1bit.The TC511000P/J/ZutilizesTOSHIBA'sCMOSSilicongate processtechnologyaswellasadvancedcircuittechniques toprovidewideoperatingmargins,bothinternallyandto thesystemuser.Mult

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TC511000J-12

SILICON GATE CMOS

DESCRIPTION TheTC511000P/J/Zisthenewgenerationdynamic RAMorganized1,048,576wordsby1bit.The TC511000P/J/ZutilizesTOSHIBA'sCMOSSilicongate processtechnologyaswellasadvancedcircuittechniques toprovidewideoperatingmargins,bothinternallyandto thesystemuser.Mult

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TC511000J-85

SILICON GATE CMOS

DESCRIPTION TheTC511000P/J/Zisthenewgenerationdynamic RAMorganized1,048,576wordsby1bit.The TC511000P/J/ZutilizesTOSHIBA'sCMOSSilicongate processtechnologyaswellasadvancedcircuittechniques toprovidewideoperatingmargins,bothinternallyandto thesystemuser.Mult

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

G511000

ALLDIMENSIONSINMM[INCH]

E-SWITCH

E-switch

HYB511000BJ-

1Mx1-BitDynamicRAMLowPower1M쨈1-BitDynamicRAM

SIEMENSSiemens Ltd

西门子德国西门子股份公司

MSM511000C

1,048,576-Wordx1-BitDYNAMICRAM:FASTPAGEMODETYPE

OKIOki Electric Cable Co.,Ltd

冲电线冲电线株式会社

MSM511000CL

1,048,576-Wordx1-BitDYNAMICRAM:FASTPAGEMODETYPE

OKIOki Electric Cable Co.,Ltd

冲电线冲电线株式会社

T511000

ALLDIMENSIONSINMM[INCH]

E-SWITCH

E-switch

TC511000P

SILICONGATECMOS

DESCRIPTION TheTC511000P/J/Zisthenewgenerationdynamic RAMorganized1,048,576wordsby1bit.The TC511000P/J/ZutilizesTOSHIBA'sCMOSSilicongate processtechnologyaswellasadvancedcircuittechniques toprovidewideoperatingmargins,bothinternallyandto thesystemuser.Mult

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

TC511000Z

SILICONGATECMOS

DESCRIPTION TheTC511000P/J/Zisthenewgenerationdynamic RAMorganized1,048,576wordsby1bit.The TC511000P/J/ZutilizesTOSHIBA'sCMOSSilicongate processtechnologyaswellasadvancedcircuittechniques toprovidewideoperatingmargins,bothinternallyandto thesystemuser.Mult

TOSHIBAToshiba Semiconductor

东芝株式会社東芝

详细参数

  • 型号:

    TC511000J

  • 制造商:

    Toshiba America Electronic Components

  • 功能描述:

    Dynamic RAM, Fast Page, 1M x 1, 26 Pin, Plastic, SOJ

供应商型号品牌批号封装库存备注价格
Q
24+
PICC20
2
自己现货
询价
TOSI
22+
SOJ-20P
8200
原装现货库存.价格优势
询价
TOS
22+
SOJ
2987
只售原装自家现货!诚信经营!欢迎来电!
询价
TOSHIBA
23+
SOJ20
8650
受权代理!全新原装现货特价热卖!
询价
TOSHIBA
2020+
SOJ20
80000
只做自己库存,全新原装进口正品假一赔百,可开13%增
询价
TOSHIBA/东芝
21+
SOJ
10000
只做正品原装现货
询价
TOSHIBA
22+
SOJ20
28600
只做原装正品现货假一赔十一级代理
询价
TOSHIBA
87+
SOJ20
28
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价
TOSHIBA
2220+
SOJ20
5215
一级代理/分销渠道价格优势 十年芯程一路只做原装正品
询价
TOSHIBA
24+
SOJ20
5215
询价
更多TC511000J供应商 更新时间2024-11-24 16:00:00