首页 >TSD14N100V>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
N-ChannelEnhancementModeHighdv/dt,Lowtrr,HDMOSTMFamily Features ●Internationalstandardpackages ●LowRDS(on)HDMOSTMprocess ●Ruggedpolysilicongatecellstructure ●UnclampedInductiveSwitching(UIS)rated ●Lowpackageinductance -easytodriveandtoprotect ●FastintrinsicRectifier Applications ●DC-DCconverters ●Batteryc | IXYS IXYS Corporation | IXYS | ||
HiPerFETPowerMOSFETs Features ●Internationalstandardpackages ●LowRDS(on)HDMOSTMprocess ●Ruggedpolysilicongatecellstructure ●UnclampedInductiveSwitching(UIS)rated ●Lowpackageinductance -easytodriveandtoprotect ●FastintrinsicRectifier Applications ●DC-DCconverters ●Batteryc | IXYS IXYS Corporation | IXYS | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=14A@TC=25℃ ·DrainSourceVoltage :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.75Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=9.5A@TC=25℃ ·DrainSourceVoltage-VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.1Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-ChannelEnhancementModeHighdv/dt,Lowtrr,HDMOSTMFamily Features ●Internationalstandardpackages ●LowRDS(on)HDMOSTMprocess ●Ruggedpolysilicongatecellstructure ●UnclampedInductiveSwitching(UIS)rated ●Lowpackageinductance -easytodriveandtoprotect ●FastintrinsicRectifier Applications ●DC-DCconverters ●Batteryc | IXYS IXYS Corporation | IXYS | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=14A@TC=25℃ ·DrainSourceVoltage- :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.75Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
HiPerFETPowerMOSFETs Features ●Internationalstandardpackages ●LowRDS(on)HDMOSTMprocess ●Ruggedpolysilicongatecellstructure ●UnclampedInductiveSwitching(UIS)rated ●Lowpackageinductance -easytodriveandtoprotect ●FastintrinsicRectifier Applications ●DC-DCconverters ●Batteryc | IXYS IXYS Corporation | IXYS | ||
N-ChannelEnhancementModeHighdv/dt,Lowtrr,HDMOSTMFamily Features ●Internationalstandardpackages ●LowRDS(on)HDMOSTMprocess ●Ruggedpolysilicongatecellstructure ●UnclampedInductiveSwitching(UIS)rated ●Lowpackageinductance -easytodriveandtoprotect ●FastintrinsicRectifier Applications ●DC-DCconverters ●Batteryc | IXYS IXYS Corporation | IXYS | ||
IscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=14A@TC=25℃ ·DrainSourceVoltage- :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.82Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
MegaMOSTMFET MegaMOS™FET N-ChannelEnhancementMode Features •Internationalstandardpackage JEDECTO-247AD •LowRDS(on)HDMOSTMprocess •Ruggedpolysilicongatecellstructure •Fastswitchingtimes Applications •Switch-modeandresonant-modepowersupplies •Motorcontrols •Uninterrupti | IXYS IXYS Corporation | IXYS | ||
TMOSPOWERFET14AMPERES1000VOLTSRDS(on)=0.80OHM TMOSE-FETPowerFieldEffectTransistor N–ChannelEnhancement–ModeSiliconGate ThisadvancedTMOSpowerFETisdesignedtowithstandhighenergyintheavalancheandcommutationmodes.Thisnewenergyefficientdesignalsooffersadrain–to–sourcediodewithfastrecoverytime.Designedforhi | Motorola Motorola, Inc | Motorola | ||
PowerFieldEffect | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
TMOSPOWERFET14AMPERES1000VOLTSRDS(on)=0.80OHM TMOSE-FETPowerFieldEffectTransistor N–ChannelEnhancement–ModeSiliconGate ThisadvancedTMOSpowerFETisdesignedtowithstandhighenergyintheavalancheandcommutationmodes.Thisnewenergyefficientdesignalsooffersadrain–to–sourcediodewithfastrecoverytime.Designedforhi | Motorola Motorola, Inc | Motorola |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ST |
23+ |
模块 |
120 |
全新原装正品,量大可订货!可开17%增值票!价格优势! |
询价 | ||
ST |
专业模块 |
MODULE |
8513 |
模块原装主营-可开原型号增税票 |
询价 | ||
原厂 |
2023+ |
模块 |
600 |
专营模块,继电器,公司原装现货 |
询价 | ||
XINWEI |
21+ |
TO-46 |
9850 |
只做原装正品假一赔十!正规渠道订货! |
询价 | ||
XINWEI |
22+ |
TO-46 |
49117 |
郑重承诺只做原装进口现货 |
询价 | ||
XINWEI |
22+ |
TO-46 |
39845 |
只做原装进口现货 |
询价 | ||
Thordarson |
新 |
5 |
全新原装 货期两周 |
询价 | |||
Thordarson |
2022+ |
1 |
全新原装 货期两周 |
询价 | |||
ST |
2023+ |
MODULE |
80000 |
一级代理/分销渠道价格优势 十年芯程一路只做原装正品 |
询价 | ||
ST |
18+ |
SOT227 |
2050 |
公司大量全新原装 正品 随时可以发货 |
询价 |
相关规格书
更多- TSF12
- TSH22IDT
- TSH690ID
- TSM101ACDT
- TSM103AIDT
- TSM104ID
- TSM110CN
- TSMAIL65686-30
- TSS463
- TT6061A
- TUA1574-5
- TUA6010XS
- TUA6031
- TUA6100
- TUSB2036
- TUSB2036VFR
- TUSB2040PT
- TUSB2046BVF
- TUSB2077APT
- TUSB3410VF
- TVP5020CPFP
- TVP5146PFP
- TVP5150AM1PBSR
- TVP5160PNP
- TX2-5V
- TXC-04002-BIPL
- TYN408
- TYN412
- TYN612
- TZA1020HP
- TZA1024T
- TZA1025T
- TZA1031HL
- TZA1035HL
- TZA1039HL
- TZA1047HL
- U2008B
- U2043B
- U2069B
- U2100B
- U2137B
- U217B
- U2223B
- U2321B
- U2391B
相关库存
更多- TSH22ID
- TSH22IN
- TSH692IDT
- TSM101C
- TSM104AIN
- TSM1051CLT
- TSM111CN
- TSP53C33ANL
- TSX5070FN
- TUA1030A1
- TUA4310XS
- TUA6020
- TUA6034T
- TUA6100B6
- TUSB2036VF
- TUSB2040APT
- TUSB2046B
- TUSB2046BVFR
- TUSB3200ACPAH
- TVE202
- TVP5145PFP
- TVP5147PFP
- TVP5150APBS
- TWH8778
- TXC-02020-AIPL
- TY45028AF
- TYN410
- TYN610
- TZA1000T
- TZA1022TS
- TZA1024T_V2
- TZA1026T
- TZA1033HL
- TZA1036HL
- TZA1042HL
- TZMC5V6-GS08
- U2010B
- U2044B
- U209B
- U211B3
- U2141B-M
- U2203B
- U2270B
- U2390B
- U2400B