UM2106

PIN DIODE

DESCRIPTION UM2100SeriesPINdiodesaredesignedfortransmit/receiveswitchandattenuatorapplicationsinHFband(2-30MHz)andbelow.Asseriesconfiguredswitches,theselonglifetime(25μstypical)diodescancontrolupto2.5kW,CWina50ohmsystem.InHFband,insertionlossisless

UM2106

ATTENUATOR AND POWER PIN DIODES 2 ??30 MHz

UM2106B

Product Change Notification

UM2106D

Product Change Notification

UM2106B

包装：卷带（TR） 封装/外壳：轴向 类别：分立半导体产品 二极管 - 射频 描述：SI PPIN HERMETIC GLASS AXIAL

UM2106D

包装：卷带（TR） 封装/外壳：接线柱 类别：分立半导体产品 二极管 - 射频 描述：SI PPIN HERMETIC STUD

UM2106SM

包装：卷带（TR） 封装/外壳：SQ-MELF 类别：分立半导体产品 二极管 - 射频 描述：SI PPIN HERMETIC MELF

UPG2106

L-BANDPADRIVERAMPLIFIER

DESCRIPTION TheµPG2106TBandµPG2110TBareGaAsMMICforPAdriveramplifierwithvariablegainfunctionwhichweredevelopedforPDC(PersonalDigitalCellularinJapan)andanotherL-bandapplication.Thedevicecanoperatewith3.0V,havingthehighgainandlowdistortion.TheµPG2106TBis

UPG2106TB

GaAsINTEGRATEDCIRCUITS

FEATURES •Operationfrequency:mPG2106TB:fopt=889to960MHz :mPG2110TB:fopt=1429to1453MHz •Supplyvoltage:mPG2106TB,mPG2110TB:VDD1,2=2.7to3.3V(3.0VTYP.) •Circuitcurrent:mPG2106TB,mPG2110TB:IDD=25mATYP.@VDD1,2=3.0V,VAGC=2.5V,Pout=+8dBm •

UPG2106TB

L-BANDPADRIVERAMPLIFIER

DESCRIPTION NECsUPG2106TBisaGaAsMMICforPAdriveramplifierswithvariablegainfunctionswhichwasdevelopedforL-bandapplications.Thedevicecanoperatewith3.0V,havinghighgainandlowdistortion. FEATURES •LOWVOLTAGEOPERATION:VDD1=VDD2=3.0V,fRF=889to960MHz@

UPG2106TB

L-BANDPADRIVERAMPLIFIER

DESCRIPTION TheµPG2106TBandµPG2110TBareGaAsMMICforPAdriveramplifierwithvariablegainfunctionwhichweredevelopedforPDC(PersonalDigitalCellularinJapan)andanotherL-bandapplication.Thedevicecanoperatewith3.0V,havingthehighgainandlowdistortion.TheµPG2106TBis

VN2106

N-ChannelEnhancement-ModeVerticalDMOSFETs

AdvancedDMOSTechnology Theseenhancement-mode(normally-off)transistorsutilizeaverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesdeviceswiththepowerhandlingcapabilitiesofbipolartransistorsandwiththehighinputimpedan

VN2106N

N-ChannelEnhancement-ModeVerticalDMOSFETs

AdvancedDMOSTechnology Theseenhancement-mode(normally-off)transistorsutilizeaverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesdeviceswiththepowerhandlingcapabilitiesofbipolartransistorsandwiththehighinputimpedan

VP2106

P-ChannelEnhancement-ModeVerticalDMOSFETs

AdvancedDMOSTechnology Theseenhancement-mode(normally-off)transistorsutilizeaverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesdeviceswiththepowerhandlingcapabilitiesofbipolartransistorsandwiththehighinputimpeda

VP2106

P-ChannelEnhancement-ModeVerticalDMOSFET

GeneralDescription TheSupertexVP2106isanenhancement-mode(normally-off)transistorthatutilizesaverticalDMOSstructureandSupertex’swell-provensilicon-gatemanufacturingprocess.Thiscombinationproducesadevicewiththepowerhandlingcapabilitiesofbipolartransistors,andtheh

VP2106

P-ChannelEnhancement-ModeVerticalDMOSFET

ZL2106

6ADigital-DCSynchronousStep-DownDC/DCConverter

TheZL2106isadigitalpowerconversionandmanagementIC thatcombinesanintegratedsynchronousstep-downDC/DC converterwithkeypowermanagementfunctionsinasmall package,resultinginaflexibleandintegratedsolution. TheZL2106canprovideanoutputvoltagefrom0.54Vto5.5V (wi

ZL2106

6ADigital-DCSynchronousStep-DownDC/DCConverter

6ADigital-DCSynchronousStep-DownDC/DCConverter TheZL2106isadigitalpowerconversionandmanagementICthatcombinesanintegratedsynchronousstep-downDC/DCconverterwithkeypowermanagementfunctionsinasmallpackage,resultinginaflexibleandintegratedsolution. Features •In

ZL2106

6ADigital-DCSynchronousStep-DownDC/DCConverter

ZL2106

6ADigital-DCSynchronousStep-DownDC-DCConverter

6ADigital-DCSynchronousStep-DownDC/DCConverter TheZL2106isadigitalpowerconversionandmanagementICthatcombinesanintegratedsynchronousstep-downDC/DCconverterwithkeypowermanagementfunctionsinasmallpackage,resultinginaflexibleandintegratedsolution. Features •In