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VBT5200

Trench MOS Barrier Schottky Rectifier

FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) •Solderdip275°Cmax.10s,perJESD22-B106(forTO-220AC,ITO-220ACandTO-262AApackage

VishayVishay Siliconix

威世科技威世科技半导体

VBT5200

Trench MOS Barrier Schottky Rectifier

VishayVishay Siliconix

威世科技威世科技半导体

VBT5200

Trench MOS Barrier Schottky Rectifier

VishayVishay Siliconix

威世科技威世科技半导体

VBT5200-E3

Trench MOS Schottky technology

FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) •Solderdip275°Cmax.10s,perJESD22-B106(forTO-220AC,ITO-220ACandTO-262AApackage

VishayVishay Siliconix

威世科技威世科技半导体

VBT5200-E3-4W

Trench MOS Barrier Schottky Rectifier

FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) •Solderdip275°Cmax.10s,perJESD22-B106(forTO-220AC,ITO-220ACandTO-262AApackage

VishayVishay Siliconix

威世科技威世科技半导体

VBT5200-E3-8W

Trench MOS Barrier Schottky Rectifier

FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) •Solderdip275°Cmax.10s,perJESD22-B106(forTO-220AC,ITO-220ACandTO-262AApackage

VishayVishay Siliconix

威世科技威世科技半导体

VBT5200-E3/4W

包装:卷带(TR) 封装/外壳:TO-263-3,D²Pak(2 引线 + 接片),TO-263AB 类别:分立半导体产品 二极管 - 整流器 - 单 描述:DIODE SCHOTTKY 5A 200V TO-263AB

Vishay General Semiconductor - Diodes Division

Vishay General Semiconductor - Diodes Division

Vishay General Semiconductor - Diodes Division

VBT5200-E3/8W

包装:卷带(TR) 封装/外壳:TO-263-3,D²Pak(2 引线 + 接片),TO-263AB 类别:分立半导体产品 二极管 - 整流器 - 单 描述:DIODE SCHOTTKY 5A 200V TO-263AB

Vishay General Semiconductor - Diodes Division

Vishay General Semiconductor - Diodes Division

Vishay General Semiconductor - Diodes Division

VFT5200

TrenchMOSBarrierSchottkyRectifier

VishayVishay Siliconix

威世科技威世科技半导体

VFT5200

TrenchMOSBarrierSchottkyRectifier

FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) •Solderdip275°Cmax.10s,perJESD22-B106(forTO-220AC,ITO-220ACandTO-262AApackage

VishayVishay Siliconix

威世科技威世科技半导体

VFT5200

TrenchMOSBarrierSchottkyRectifier

VishayVishay Siliconix

威世科技威世科技半导体

VIT5200

TrenchMOSBarrierSchottkyRectifier

VishayVishay Siliconix

威世科技威世科技半导体

VIT5200

TrenchMOSBarrierSchottkyRectifier

VishayVishay Siliconix

威世科技威世科技半导体

VIT5200

TrenchMOSBarrierSchottkyRectifier

FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) •Solderdip275°Cmax.10s,perJESD22-B106(forTO-220AC,ITO-220ACandTO-262AApackage

VishayVishay Siliconix

威世科技威世科技半导体

VNH5200AS-E

Fully-protected,eco-friendlymotorcontrolsolutions

KEYFEATURES •Cross-conductionprotection •Currentlimitation •Over-temperatureshutdown •Powerlimitation(STIP) •PWMoperationupto20kHz •Chargepumpoutputforreversepolarity protection •Analogcurrentsenseoutput •Overvoltageclampandundervoltage shutdown •Outputp

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

VNH5200AS-E

forcarbodyapplications

Description TheL5958includes6linearvoltageregulatorsanda2Apowerswitch,workingdownto4.5Vbatterylevel.Allthevoltageregulatorscanbeswitchedoffthroughthethreeenablepins. Features ■L5958sixoutputs: –8.5V@200mA –5.0V@300mA –3.3V@250mA

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

VT5200

TrenchMOSBarrierSchottkyRectifier

VishayVishay Siliconix

威世科技威世科技半导体

VT5200

TrenchMOSBarrierSchottkyRectifier

FEATURES •TrenchMOSSchottkytechnology •Lowforwardvoltagedrop,lowpowerlosses •Highefficiencyoperation •MeetsMSLlevel1,perJ-STD-020,LFmaximumpeakof245°C(forTO-263ABpackage) •Solderdip275°Cmax.10s,perJESD22-B106(forTO-220AC,ITO-220ACandTO-262AApackage

VishayVishay Siliconix

威世科技威世科技半导体

W5200

Microcontroller

WIZnet

WIZnet Co., Ltd

W-5200TDI-GT

LowNoiseRegulated

COPALCopal Electronics

尼得科科智博电子尼得科科智博电子(上海)有限公司

详细参数

  • 型号:

    VBT5200

  • 制造商:

    VISHAY

  • 制造商全称:

    Vishay Siliconix

  • 功能描述:

    Trench MOS Barrier Schottky Rectifier

供应商型号品牌批号封装库存备注价格
VISHAY/威世
22+
TO-263
20000
保证原装正品,假一陪十
询价
VISHAY
1809+
TO-263
3675
就找我吧!--邀您体验愉快问购元件!
询价
VISHAY/威世
23+
TO-263AB
11200
原厂授权一级代理、全球订货优势渠道、可提供一站式BO
询价
VISHAY/威世
22+
TO-263
100000
代理渠道/只做原装/可含税
询价
VISHAY/威世
22+
TO263
12000
只做原装、原厂优势渠道、假一赔十
询价
VISHAY/威世
23+
TO263
6000
只有原装正品,老板发话合适就出
询价
VISHAY/威世
24+
TO263
990000
明嘉莱只做原装正品现货
询价
Vishay General Semiconductor -
24+
TO-263AB(D?PAK)
9350
独立分销商 公司只做原装 诚心经营 免费试样正品保证
询价
VISHAY/威世
23+
TO-263
50000
全新原装正品现货,支持订货
询价
VISHAY/威世
23+
NA/
3264
原厂直销,现货供应,账期支持!
询价
更多VBT5200供应商 更新时间2024-11-28 16:59:00