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ZMP25012SX-F-WO

250WAC/DCITE&MedicalDualSafetyApprovals

ETA-USA

eta-usa

ZXTN25012EFH

12V,SOT23,NPNmediumpowertransistor

Description Advancedprocesscapabilityandpackagedesignhavebeenusedtomaximizethepowerhandlingandperformanceofthissmalloutlinetransistor.Thecompactsizeandratingsofthisdevicemakeitideallysuitedtoapplicationswherespaceisatapremium. Features •Highpowerdissip

Zetex

Zetex Semiconductors

ZXTN25012EFH

12V,SOT23,NPNmediumpowertransistor

Description Advancedprocesscapabilityandpackagedesignhavebeenusedtomaximizethepowerhandlingandperformanceofthissmalloutlinetransistor.Thecompactsizeandratingsofthisdevicemakeitideallysuitedtoapplicationswherespaceisatapremium. Features •Highpowerdissip

DIODES

Diodes Incorporated

ZXTN25012EFHTA

12V,SOT23,NPNmediumpowertransistor

Description Advancedprocesscapabilityandpackagedesignhavebeenusedtomaximizethepowerhandlingandperformanceofthissmalloutlinetransistor.Thecompactsizeandratingsofthisdevicemakeitideallysuitedtoapplicationswherespaceisatapremium. Features •Highpowerdissip

DIODES

Diodes Incorporated

ZXTN25012EFL

12V,SOT23,NPNlowpowertransistor

Description Advancedprocesscapabilityhasbeenusedtoachievehighcurrentgainholdupmakingthisdeviceidealforapplicationsrequiringhighpulsecurrents. Features •Highpeakcurrent •Lowsaturationvoltage •6Vreverseblockingvoltage Applications •MOSFETandIGBTgatedriving

Zetex

Zetex Semiconductors

ZXTN25012EFL

12V,SOT23,NPNlowpowertransistor

Description Advancedprocesscapabilityhasbeenusedtoachievehighcurrentgainholdupmakingthisdeviceidealforapplicationsrequiringhighpulsecurrents. Features •Highpeakcurrent •Lowsaturationvoltage •6Vreverseblockingvoltage Applications •MOSFETandIGBTgatedriving

DIODES

Diodes Incorporated

ZXTN25012EFLTA

12V,SOT23,NPNlowpowertransistor

Description Advancedprocesscapabilityhasbeenusedtoachievehighcurrentgainholdupmakingthisdeviceidealforapplicationsrequiringhighpulsecurrents. Features •Highpeakcurrent •Lowsaturationvoltage •6Vreverseblockingvoltage Applications •MOSFETandIGBTgatedriving

DIODES

Diodes Incorporated

ZXTN25012EFLTA

12V,SOT23,NPNlowpowertransistor

Description Advancedprocesscapabilityhasbeenusedtoachievehighcurrentgainholdupmakingthisdeviceidealforapplicationsrequiringhighpulsecurrents. Features •Highpeakcurrent •Lowsaturationvoltage •6Vreverseblockingvoltage Applications •MOSFETandIGBTgatedriving

Zetex

Zetex Semiconductors

ZXTN25012EZ

12VNPNhighgaintransistor

Description PackagedintheSOT89outlinethisnewultrahighgain,lowsaturation12VNPNtransistoroffersextremelylowonstatelossesmakingitidealforuseinDC-DCcircuitsandvariousdrivingandpowermanagementfunctions Features •6.5Acontinuouscurrent •Upto15Apeakcurrent •

Zetex

Zetex Semiconductors

ZXTN25012EZ

12VNPNhighgaintransistorinSOT89

Features •BVCEO>12V •LowSaturationVoltageVCE(sat)

DIODES

Diodes Incorporated

ZXTN25012EZTA

12VNPNhighgaintransistorinSOT89

Features •BVCEO>12V •LowSaturationVoltageVCE(sat)

DIODES

Diodes Incorporated

ZXTN25012EZTA

12VNPNhighgaintransistor

Description PackagedintheSOT89outlinethisnewultrahighgain,lowsaturation12VNPNtransistoroffersextremelylowonstatelossesmakingitidealforuseinDC-DCcircuitsandvariousdrivingandpowermanagementfunctions Features •6.5Acontinuouscurrent •Upto15Apeakcurrent •

Zetex

Zetex Semiconductors

ZXTP25012EFH

12V,SOT23,PNPmediumpowertransistor

Description Advancedprocesscapabilityandpackagedesignhavebeenusedtomaximisethepowerhandlingandperformanceofthissmalloutlinetransistor.Thecompactsizeandratingsofthisdevicemakeitideallysuitedtoapplicationswherespaceisatapremium. Features •Highpowerdissip

DIODES

Diodes Incorporated

ZXTP25012EFH

12V,SOT23,PNPmediumpowertransistor

Description Advancedprocesscapabilityandpackagedesignhavebeenusedtomaximisethepowerhandlingandperformanceofthissmalloutlinetransistor.Thecompactsizeandratingsofthisdevicemakeitideallysuitedtoapplicationswherespaceisatapremium. Features •Highpowerdissip

Zetex

Zetex Semiconductors

ZXTP25012EFHTA

12V,SOT23,PNPmediumpowertransistor

Description Advancedprocesscapabilityandpackagedesignhavebeenusedtomaximisethepowerhandlingandperformanceofthissmalloutlinetransistor.Thecompactsizeandratingsofthisdevicemakeitideallysuitedtoapplicationswherespaceisatapremium. Features •Highpowerdissip

DIODES

Diodes Incorporated

ZXTP25012EFHTA

12V,SOT23,PNPmediumpowertransistor

Description Advancedprocesscapabilityandpackagedesignhavebeenusedtomaximisethepowerhandlingandperformanceofthissmalloutlinetransistor.Thecompactsizeandratingsofthisdevicemakeitideallysuitedtoapplicationswherespaceisatapremium. Features •Highpowerdissip

Zetex

Zetex Semiconductors

ZXTP25012EZ

20VPNPhighgaintransistor

Description PackagedintheSOT89outlinethisnewlowsaturation12VPNPtransistoroffersextremelylowonstatelossesmakingitidealforuseinDC-DCcircuitsandvariousdrivingandpowermanagementfunctions. Features •4.5Acontinuouscurrent •Upto10Apeakcurrent •Verylowsatura

Zetex

Zetex Semiconductors

ZXTP25012EZ

20VPNPhighgaintransistorinSOT89

Features •BVCEO>-12V •IC=-4.5AHighContinuousCurrent •LowSaturationVoltageVCE(sat)

DIODES

Diodes Incorporated

ZXTP25012EZTA

20VPNPhighgaintransistorinSOT89

Features •BVCEO>-12V •IC=-4.5AHighContinuousCurrent •LowSaturationVoltageVCE(sat)

DIODES

Diodes Incorporated

ZXTP25012EZTA

20VPNPhighgaintransistor

Description PackagedintheSOT89outlinethisnewlowsaturation12VPNPtransistoroffersextremelylowonstatelossesmakingitidealforuseinDC-DCcircuitsandvariousdrivingandpowermanagementfunctions. Features •4.5Acontinuouscurrent •Upto10Apeakcurrent •Verylowsatura

Zetex

Zetex Semiconductors

供应商型号品牌批号封装库存备注价格
Vishay Semiconductor Diodes Di
22+
MAGNAPAK?
9000
原厂渠道,现货配单
询价
VishaySemiconductorDiode
23+
DIODESTDREC1200V250AMAGN
1690
专业代理销售半导体模块,能提供更多数量
询价
VISHAY
专业模块
MODULE
8513
模块原装主营-可开原型号增税票
询价
VISHAY
17+
MODULE
2100
公司大量全新现货 随时可以发货
询价
VISHAY
23+
标准封装
5000
原厂授权一级代理 IGBT模块 可控硅 晶闸管 熔断器质保
询价
Vishay General Semiconductor -
24+
3-MAGN-A-PAK?
9350
独立分销商 公司只做原装 诚心经营 免费试样正品保证
询价
VISHAY
2022+
MAGN-A-Pak
1500
长期供应,价格优势,全新原装,支持实单,
询价
VISHAY/威世
23+
MODULE
11200
原厂授权一级代理、全球订货优势渠道、可提供一站式BO
询价
更多VSKD25012供应商 更新时间2024-11-22 10:30:00