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1N5806U

Aerospace2.5Afastrecoveryrectifier

Description ThispowerultrafastrecoveryrectifierisdesignedandpackagedtocomplywiththeESCC5000specificationforaerospaceproducts.ItishousedinasurfacemounthermeticallysealedLCC2Apackagewhosefootprintis100compatiblewith industrystandardsolutionsinD5A. Fea

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

1N5806US

RectifierDiodeSeries

MA-COM

M/A-COM Technology Solutions, Inc.

1N5806US

UltrafastRecoveryRectifier

SENSITRON

Sensitron

1N5806US

SuperfastRecoveryDiodesSurfaceMount(US)

Features ‹Verylowreverserecoverytime ‹Hermeticallysealednon-cavityconstruction ‹Soft,non-snap,offrecoverycharacteristics ‹Verylowforwardvoltagedrop VR50-150V IF1N5802USto1N5806US=2.5A trr1N5802USto1N5806US=25nS IR1N5802USto1N5806US=1µA

SEMTECH

Semtech Corporation

1N5806US

UltrafastRecoveryRectifier

UltrafastRecoveryRectifier •Hermetic,non-cavityglasspackage •Metallurgicallybonded •OperatingandStorageTemperature:-65°Cto+175°C

SENSITRON

Sensitron

1N5806US

SURFACEMOUNTVOIDLESSHERMETICALLY-SEALEDULTRAFASTRECOVERYGLASSRECTIFIERS

MicrosemiMicrosemi Corporation

美高森美美高森美公司

1N5806US

SURFACEMOUNTVOIDLESSHERMETICALLY-SEALEDULTRAFASTRECOVERYGLASSRECTIFIERS

DESCRIPTION This“ultrafastrecovery”rectifierdiodeseriesismilitaryqualifiedtoMIL-PRF-19500/477andisidealforhigh-reliabilityapplicationswhereafailurecannotbetolerated.Theseindustry-recognized2.5Ampratedrectifiersforworkingpeakreversevoltagesfrom50to150voltsare

MicrosemiMicrosemi Corporation

美高森美美高森美公司

1N5806US

HERMETICAXIAL/MELFLEADRECTIFIER

UltrafastRecoveryRectifier •Hermetic,non-cavityglasspackage •Metallurgicallybonded •OperatingandStorageTemperature:-65°Cto+175°C

SENSITRON

Sensitron

1N5806US

MILITARYAPPROVEDHIGHEFFICIENCY2.5AMPAND6.0AMP

DESCRIPTION This“ultrafastrecovery”rectifierdiodeseriesismilitaryqualifiedtoMIL-PRF-19500/477andisidealforhigh-reliabilityapplicationswhereafailurecannotbetolerated.Theseindustry-recognized2.5Ampratedrectifiersforworkingpeakreversevoltagesfrom50to150voltsare

MicrosemiMicrosemi Corporation

美高森美美高森美公司

JAN1N5806

MILITARYAPPROVED,HIGHEFFICIENCY,2.5AMPAND6.0AMP

DESCRIPTION This“ultrafastrecovery”rectifierdiodeseriesismilitaryqualifiedtoMIL-PRF-19500/477andisidealforhigh-reliabilityapplicationswhereafailurecannotbetolerated.Theseindustry-recognized2.5Ampratedrectifiersforworkingpeakreversevoltagesfrom50to150voltsare

MicrosemiMicrosemi Corporation

美高森美美高森美公司

JAN1N5806

ULTRAFASTMILITARYRECTIFIERS

MicrosemiMicrosemi Corporation

美高森美美高森美公司

JAN1N5806

MILITARYAPPROVEDHIGHEFFICIENCY2.5AMPAND6.0AMP

DESCRIPTION This“ultrafastrecovery”rectifierdiodeseriesismilitaryqualifiedtoMIL-PRF-19500/477andisidealforhigh-reliabilityapplicationswhereafailurecannotbetolerated.Theseindustry-recognized2.5Ampratedrectifiersforworkingpeakreversevoltagesfrom50to150voltsare

MicrosemiMicrosemi Corporation

美高森美美高森美公司

JAN1N5806

HERMETICAXIAL/MELFLEADRECTIFIER

UltrafastRecoveryRectifier •Hermetic,non-cavityglasspackage •Metallurgicallybonded •OperatingandStorageTemperature:-65°Cto+175°C

SENSITRON

Sensitron

JAN1N5806US

HERMETICAXIAL/MELFLEADRECTIFIER

UltrafastRecoveryRectifier •Hermetic,non-cavityglasspackage •Metallurgicallybonded •OperatingandStorageTemperature:-65°Cto+175°C

SENSITRON

Sensitron

JAN1N5806US

MILITARYAPPROVEDHIGHEFFICIENCY2.5AMPAND6.0AMP

DESCRIPTION This“ultrafastrecovery”rectifierdiodeseriesismilitaryqualifiedtoMIL-PRF-19500/477andisidealforhigh-reliabilityapplicationswhereafailurecannotbetolerated.Theseindustry-recognized2.5Ampratedrectifiersforworkingpeakreversevoltagesfrom50to150voltsare

MicrosemiMicrosemi Corporation

美高森美美高森美公司

JANHCE1N5806

2.5AMPSFASTRECOVERYRECTIFIERCHIP50-150VOLTS

FEATURES: •ChipOutlineDimensions:41x41mils •ChipThickness:8to12mils •AnodeMetallization:Aluminum •MetallizationThickness:50,000ÃNominal •BondingArea:23x23milsMin. •BackMetallization:Gold •JunctionPassivatedwithThermalSiliconDioxide-PlanarDesign •Back

MicrosemiMicrosemi Corporation

美高森美美高森美公司

JANHCF1N5806

2.5AMPSFASTRECOVERYRECTIFIERCHIP50-150VOLTS

FEATURES: •ChipOutlineDimensions:41x41mils •ChipThickness:8to12mils •AnodeMetallization:Aluminum •MetallizationThickness:50,000ÃNominal •BondingArea:23x23milsMin. •BackMetallization:Gold •JunctionPassivatedwithThermalSiliconDioxide-PlanarDesign •Back

MicrosemiMicrosemi Corporation

美高森美美高森美公司

JANKCE1N5806

2.5AMPSFASTRECOVERYRECTIFIERCHIP50-150VOLTS

FEATURES: •ChipOutlineDimensions:41x41mils •ChipThickness:8to12mils •AnodeMetallization:Aluminum •MetallizationThickness:50,000ÃNominal •BondingArea:23x23milsMin. •BackMetallization:Gold •JunctionPassivatedwithThermalSiliconDioxide-PlanarDesign •Back

MicrosemiMicrosemi Corporation

美高森美美高森美公司

JANKCF1N5806

2.5AMPSFASTRECOVERYRECTIFIERCHIP50-150VOLTS

FEATURES: •ChipOutlineDimensions:41x41mils •ChipThickness:8to12mils •AnodeMetallization:Aluminum •MetallizationThickness:50,000ÃNominal •BondingArea:23x23milsMin. •BackMetallization:Gold •JunctionPassivatedwithThermalSiliconDioxide-PlanarDesign •Back

MicrosemiMicrosemi Corporation

美高森美美高森美公司

JANS1N5806

ULTRAFASTMILITARYRECTIFIERS

MicrosemiMicrosemi Corporation

美高森美美高森美公司

详细参数

  • 型号:

    1N5806TR

  • 制造商:

    Microsemi Corporation

  • 功能描述:

    DIODE ULTRA FAST 150V 2.5A APAK

  • 功能描述:

    DIODE 150V 2.5A 25NS AXIAL

供应商型号品牌批号封装库存备注价格
Microsemi
1942+
N/A
1537
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询价
MICROSEMI
1809+
A-PAK
326
就找我吧!--邀您体验愉快问购元件!
询价
STM原厂目录
24+
LCC-2A
96000
全新原装
询价
ST
23+
原厂原封
16900
正规渠道,只有原装!
询价
ST
22+
原厂原封
16900
支持样品 原装现货 提供技术支持!
询价
ST
24+
NA
200000
原装进口正口,支持样品
询价
ST
2480
只做正品
询价
Microchip
21+
15000
只做原装
询价
microchipdirect
23+
15422
原包装原标现货,假一罚十,
询价
24+
N/A
51000
一级代理-主营优势-实惠价格-不悔选择
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更多1N5806TR供应商 更新时间2024-11-22 10:18:00