1N5817MT-I数据表ic资料供应价格意法半导体-114ic电子网

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零件编号	下载&订购	功能描述	制造商&上传企业	LOGO
1N5817PT	文件：81.31 Kbytes Page：2 Pages	VOLTAGERANGE20-40VoltsCURRENT1.0Ampere	CHENMKOchenmko 力勤股份有限公司	CHENMKO
1N5817RL	文件：75.98 Kbytes Page：7 Pages	AxialLeadRectifiers AxialLeadRectifiers ThisseriesemploystheSchottkyBarrierprincipleinalargeareametal−to−siliconpowerdiode.State−of−the−artgeometryfeatureschromebarriermetal,epitaxialconstructionwithoxidepassivationandmetaloverlapcontact.Ideallysuitedforuseasrectifiersinlow−volt	ONSEMION Semiconductor 安森美半导体安森美半导体公司	ONSEMI
1N5817RL	文件：61.24 Kbytes Page：5 Pages	LOWDROPPOWERSCHOTTKYRECTIFIER DESCRIPTION AxialPowerSchottkyrectifiersuitedforSwitchModePowerSuppliesandhighfrequencyDCtoDCconverters.PackagedinDO41thesedevicesareintendedforuseinlowvoltage,highfrequencyinverters,freewheeling,polarityprotectionandsmallbatterychargers. FEATURESANDBENEF	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团	STMICROELECTRONICS
1N5817RL	文件：249.43 Kbytes Page：9 Pages	AxialLeadRectifiersSCHOTTKYBARRIERRECTIFIERS1.0AMPERE20,30and40VOLTS ThisseriesemploystheSchottkyBarrierprincipleinalargearea metal−to−siliconpowerdiode.State−of−the−artgeometryfeatures chromebarriermetal,epitaxialconstructionwithoxidepassivation andmetaloverlapcontact.Ideallysuitedforuseasrectifiersin low−voltage,high−frequency	ONSEMION Semiconductor 安森美半导体安森美半导体公司	ONSEMI
1N5817RLG	文件：75.98 Kbytes Page：7 Pages	AxialLeadRectifiers AxialLeadRectifiers ThisseriesemploystheSchottkyBarrierprincipleinalargeareametal−to−siliconpowerdiode.State−of−the−artgeometryfeatureschromebarriermetal,epitaxialconstructionwithoxidepassivationandmetaloverlapcontact.Ideallysuitedforuseasrectifiersinlow−volt	ONSEMION Semiconductor 安森美半导体安森美半导体公司	ONSEMI
1N5817RLG	文件：249.43 Kbytes Page：9 Pages	AxialLeadRectifiersSCHOTTKYBARRIERRECTIFIERS1.0AMPERE20,30and40VOLTS ThisseriesemploystheSchottkyBarrierprincipleinalargearea metal−to−siliconpowerdiode.State−of−the−artgeometryfeatures chromebarriermetal,epitaxialconstructionwithoxidepassivation andmetaloverlapcontact.Ideallysuitedforuseasrectifiersin low−voltage,high−frequency	ONSEMION Semiconductor 安森美半导体安森美半导体公司	ONSEMI
1N5817S	文件：583.81 Kbytes Page：2 Pages	SCHOTTKYBARRIERRECTIFIER	CHENDAMicrodiode Electronics (Jiangsu) Co.,Ltd. 深圳辰达半导体深圳辰达半导体有限公司	CHENDA
1N5817S	文件：269.2 Kbytes Page：3 Pages	SCHOTTKYBARRIERRECTIFIER	HORNBYNantong Hornby Electronic Co.,Ltd 南通康比电子南通康比电子有限公司	HORNBY
1N5817S	文件：242.91 Kbytes Page：2 Pages	SCHOTTKYBARRIERRECTIFIERS VOLTAGERANGE:20---40VCURRENT:1.0A FEATURES ◇Metal-Semiconductorjunctionwithguardring ◇Epitaxialconstruction ◇Lowforwardvoltagedrop,lowswitchinglosses ◇Highsurgecapability ◇Foruseinlowvoltage,highfrequencyinvertersfree wheeling,andpolarityprotectionappli	DSK Diode Semiconductor Korea	DSK
1N5817S	文件：989.57 Kbytes Page：2 Pages	SCHOTTKYBARRIERRECTIFIER ReverseVoltage-20to40VoltsForwardCurrent-1.0Ampere FEATURES ◆PlasticpackagehasUnderwritersLaboratory FlammabilityClassification94V-0 ◆Metalsiliconjunction,majoritycarrierconduction ◆Guardringforovervoltageprotection ◆Lowpowerloss,highefficiency ◆Highcurren	SHUNYEShanghai Shunye Electronics Co.,Ltd. 顺烨电子江苏顺烨电子有限公司	SHUNYE
1N5817S	文件：568.42 Kbytes Page：2 Pages	SCHOTTKYBARRIERRECTIFIER	CHENDAMicrodiode Electronics (Jiangsu) Co.,Ltd. 深圳辰达半导体深圳辰达半导体有限公司	CHENDA
1N5817S	文件：1.04528 Mbytes Page：2 Pages	SchottkyBarrierRectifiers VOLTAGERANGE:20---40VCURRENT:1.0A Features ◇Metal-Semiconductorjunctionwithguardring ◇Epitaxialconstruction ◇Lowforwardvoltagedrop,lowswitchinglosses ◇Highsurgecapability ◇Foruseinlowvoltage,highfrequencyinvertersfree wheeling,andpolarityprotectionappli	LUGUANGShenzhen Luguang Electronic Technology Co., Ltd 鲁光电子深圳市鲁光电子科技有限公司	LUGUANG
1N5817S	文件：177.14 Kbytes Page：1 Pages	1.0AMP.SCHOTTKYBARRIERRECTIFIERS	CHONGQINGChongqing Pingwei Enterprise co.,Ltd 重庆平伟实业重庆平伟实业股份有限公司	CHONGQING
1N5817S	文件：624.62 Kbytes Page：2 Pages	SCHOTTKYBARRIERRECTIFIER ReverseVoltage-20to40VoltsForwardCurrent-1.0Ampere FEATURES ◆PlasticpackagehasUnderwritersLaboratory FlammabilityClassification94V-0 ◆Metalsiliconjunction,majoritycarrierconduction ◆Guardringforovervoltageprotection ◆Lowpowerloss,highefficiency ◆Highcurrent	CHENDAMicrodiode Electronics (Jiangsu) Co.,Ltd. 深圳辰达半导体深圳辰达半导体有限公司	CHENDA
1N5817S	文件：989.93 Kbytes Page：2 Pages	SCHOTTKYBARRIERRECTIFIER ReverseVoltage-20to40VoltsForwardCurrent-1.0Ampere FEATURES ◆PlasticpackagehasUnderwritersLaboratory FlammabilityClassification94V-0 ◆Metalsiliconjunction,majoritycarrierconduction ◆Guardringforovervoltageprotection ◆Lowpowerloss,highefficiency ◆Highcurren	SYChangzhou Shunye Electronics Co.,Ltd. 顺烨电子江苏顺烨电子有限公司	SY
1N5817S	文件：52.22 Kbytes Page：2 Pages	SCHOTTKYBARRIERRECTIFIER VOLTAGERANGE:20---40VCURRENT:1.0A FEATURES ◇Metal-Semiconductorjunctionwithguardring ◇Epitaxialconstruction ◇Lowforwardvoltagedrop,lowswitchinglosses ◇Highsurgecapability ◇Foruseinlowvoltage,highfrequencyinvertersfree wheeling,andpolarityprotectionappli	BILINGalaxy Semi-Conductor Holdings Limited 世纪微电子常州银河世纪微电子股份有限公司	BILIN
1N5817SF	文件：332.7 Kbytes Page：2 Pages	SCHOTTKYBARRIERRECTIFIERReverseVoltage20to40VoltsForwardCurrent-1.0Ampere ReverseVoltage20to40Volts ForwardCurrent-1.0Ampere FEATURES •PlasticpackagehasUnderwritersLaboratoryFlammabilityClassification94V-0 •Metalsiliconjunction,majoritycarrierconduction •Guardringforovervoltageprotection •Lowpowerloss,highefficiency •Highcurrent	GXELECTRONICSShandong Xinghe Minghui Electronics Co., Ltd 星合明辉电子山东星合明辉电子有限公司	GXELECTRONICS
1N5817SF	文件：332.7 Kbytes Page：2 Pages	SCHOTTKYBARRIERRECTIFIERReverseVoltage20to40VoltsForwardCurrent-1.0Ampere ReverseVoltage20to40Volts ForwardCurrent-1.0Ampere FEATURES •PlasticpackagehasUnderwritersLaboratoryFlammabilityClassification94V-0 •Metalsiliconjunction,majoritycarrierconduction •Guardringforovervoltageprotection •Lowpowerloss,highefficiency •Highcurrent	CHENDAMicrodiode Electronics (Jiangsu) Co.,Ltd. 深圳辰达半导体深圳辰达半导体有限公司	CHENDA
1N5817SF	文件：75.85 Kbytes Page：2 Pages	SCHOTTKYBARRIERRECTIFIER ReverseVoltage20to40Volts ForwardCurrent-1.0Ampere FEATURES •PlasticpackagehasUnderwritersLaboratoryFlammabilityClassification94V-0 •Metalsiliconjunction,majoritycarrierconduction •Guardringforovervoltageprotection •Lowpowerloss,highefficiency •Highcurrent	JINGHENGJinan Jing Heng Electronics Co., Ltd. 晶恒济南晶恒电子有限责任公司	JINGHENG
1N5817SF	文件：75.85 Kbytes Page：2 Pages	SCHOTTKYBARRIERRECTIFIER	JINANJINGHENGJinan Jingheng (Group) Co.,Ltd 晶恒集团济南晶恒电子有限责任公司	JINANJINGHENG

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供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市芯诚实创科技有限公司	1N5817MT-I	DIODES	2022	DO-213AB / LL41	1600	全新原装,房间现货	询价
深圳市一线半导体有限公司	1N5817MT-I	DIODES	24+	DO-213ABLL41	8100	新进库存/原装	询价
深圳市永贝尔科技有限公司	1N5817PT	CHENMKO	23+	原厂原包	19960	只做进口原装终端工厂免费送样	询价
深圳市赛美科科技有限公司	1N5817R	ONSEMI		NA	8560	一级代理原装正品假一罚十价格优势长期供货	询价
深圳市达恩科技有限公司	1N5817R0	TaiwanSemiconductor	18+	NA	3000	进口原装正品优势供应QQ3171516190	询价
深圳市鹏顺微电子科技有限公司	1N5817R0	Taiwan Semiconductor	2022+	原厂原包装	6800	全新原装支持表配单中国著名电子元器件独立分销	询价
深圳市科雨电子有限公司	1N5817R0G	TAIWAN	1809+	DO-204	16750	就找我吧!--邀您体验愉快问购元件!	询价
深圳市宏捷佳电子科技有限公司	1N5817R1G	Taiwan Semiconductor Corporati	24+	DO-204AL(DO-41)	9350	独立分销商公司只做原装诚心经营免费试样正品保证	询价
齐创科技(上海,北京,青岛)有限公司	1N5817RL	ON	23+	DO-41	5000	原装正品,假一罚十	询价
深圳市豪迈兴电子有限公司	1N5817RL	ON	2339+	DO-41	5642	公司原厂原装现货假一罚十!特价出售!强势库存!	询价

更多1N5817MT-I供应商更新时间2024-11-22 14:30:00

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