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1N5818-B

1.0A SCHOTTKY BARRIER RECTIFIER

DIODES

Diodes Incorporated

1N5818-B

Guard Ring Die Construction for Transient Protection

DIODES

Diodes Incorporated

1N5818-B

包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 封装/外壳:DO-204AL,DO-41,轴向 类别:分立半导体产品 二极管 - 整流器 - 单 描述:DIODE SCHOTTKY 30V 1A DO41

PAMDiodes Incorporated

龙鼎威

1N5818-E

SchottkyBarrierRectifiersReverseVoltage20to40VForwardCurrent1.0A

Feature&Dimensions *PlasticpackagehasUnderwritersLaboratoryFlammabilityClassification94V-0 *Lowpowerloss,highefficiency *Foruseinlowvoltagehighfrequencyinverters,freewheeling,andpolarityprotectionapplications *Guardingforovervoltageprotection *Hightempera

LRCLeshan Radio Company

乐山无线电乐山无线电股份有限公司

1N5818FL

SURFACEMOUNTSCHOTTKYBARRIERRECTIFIERS

PJSEMIDongguan Pingjingsemi Technology Co., Ltd,

平晶半导体东莞市平晶半导体科技有限公司

1N5818G

1AmpSchottkyRectifier

1AmpSchottkyRectifier ●SchottkyBarrierRectifier ●GuardRingProtection ●LowForwardVoltage ●HighReliability ●HighCurrentCapability

MicrosemiMicrosemi Corporation

美高森美美高森美公司

1N5818G

AxialLeadRectifiers

AxialLeadRectifiers ThisseriesemploystheSchottkyBarrierprincipleinalargeareametal−to−siliconpowerdiode.State−of−the−artgeometryfeatureschromebarriermetal,epitaxialconstructionwithoxidepassivationandmetaloverlapcontact.Ideallysuitedforuseasrectifiersinlow−volt

ONSEMION Semiconductor

安森美半导体安森美半导体公司

1N5818G

AxialLeadRectifiersSCHOTTKYBARRIERRECTIFIERS1.0AMPERE20,30and40VOLTS

ThisseriesemploystheSchottkyBarrierprincipleinalargearea metal−to−siliconpowerdiode.State−of−the−artgeometryfeatures chromebarriermetal,epitaxialconstructionwithoxidepassivation andmetaloverlapcontact.Ideallysuitedforuseasrectifiersin low−voltage,high−frequency

ONSEMION Semiconductor

安森美半导体安森美半导体公司

1N5818H

SCHOTTKYBARRIERRECTIFIERS

VOLTAGE20to40VoltsCURRENT1.0Ampere FEATURES •PlasticpackagehasUnderwritersLaboratory FlammabilityClassification94V-Outilizing FlameRetardantEpoxyMoldingCompound. •ExceedsenvironmentalstandardsofMIL-S-19500/228 •Foruseinlowvoltage,highfrequencyinverters,f

PANJITPan Jit International Inc.

强茂強茂股份有限公司

1N5818HS

SurfaceMountSchottkyBarrierRectifier

PJSEMIDongguan Pingjingsemi Technology Co., Ltd,

平晶半导体东莞市平晶半导体科技有限公司

1N5818L

1.0AMPSCHOTTKYBARRIERRECTIFIERS

VOLTAGERANGE20to40VoltsCURRENT1.0Ampere FEATURES *Lowforwardvoltagedrop *Highcurrentcapability *Highreliability *Highsurgecurrentcapability *Epitaxialconstruction

BYTES

Bytes

1N5818-LFR

1ASCHOTTKYBARRIERRECTIFIERS

FEATURES ●UL94V0FLAMERETARDANTEPOXYMOLDINGCOMPOUND ●EXTREMELYLOWVF ●LOWPOWERLOSS/HIGHEFFICIENCY ●LOWSTOREDCHARGE,MAJORITYCARRIERCONDUCTION ●LEADFREE

FRONTIER

Frontier Electronics

1N5818M

1.0ASURFACEMOUNTSCHOTTKYBARRIERRECTIFIER

Features ●HighCurrentCapability ●LowForwardVoltageDrop ●GuardRingforTransientProtection ●GlassPackageforHighReliability ●PackagedforSurfaceMountApplications

DIODES

Diodes Incorporated

1N5818M

1.0ASURFACEMOUNTSCHOTTKYBARRIERRECTIFIER

DIODES

Diodes Incorporated

1N5818RL

AxialLeadRectifiers

AxialLeadRectifiers ThisseriesemploystheSchottkyBarrierprincipleinalargeareametal−to−siliconpowerdiode.State−of−the−artgeometryfeatureschromebarriermetal,epitaxialconstructionwithoxidepassivationandmetaloverlapcontact.Ideallysuitedforuseasrectifiersinlow−volt

ONSEMION Semiconductor

安森美半导体安森美半导体公司

1N5818RL

LOWDROPPOWERSCHOTTKYRECTIFIER

DESCRIPTION AxialPowerSchottkyrectifiersuitedforSwitchModePowerSuppliesandhighfrequencyDCtoDCconverters.PackagedinDO41thesedevicesareintendedforuseinlowvoltage,highfrequencyinverters,freewheeling,polarityprotectionandsmallbatterychargers. FEATURESANDBENEF

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

1N5818RL

AxialLeadRectifiersSCHOTTKYBARRIERRECTIFIERS1.0AMPERE20,30and40VOLTS

ThisseriesemploystheSchottkyBarrierprincipleinalargearea metal−to−siliconpowerdiode.State−of−the−artgeometryfeatures chromebarriermetal,epitaxialconstructionwithoxidepassivation andmetaloverlapcontact.Ideallysuitedforuseasrectifiersin low−voltage,high−frequency

ONSEMION Semiconductor

安森美半导体安森美半导体公司

1N5818RLG

AxialLeadRectifiers

AxialLeadRectifiers ThisseriesemploystheSchottkyBarrierprincipleinalargeareametal−to−siliconpowerdiode.State−of−the−artgeometryfeatureschromebarriermetal,epitaxialconstructionwithoxidepassivationandmetaloverlapcontact.Ideallysuitedforuseasrectifiersinlow−volt

ONSEMION Semiconductor

安森美半导体安森美半导体公司

1N5818RLG

AxialLeadRectifiersSCHOTTKYBARRIERRECTIFIERS1.0AMPERE20,30and40VOLTS

ThisseriesemploystheSchottkyBarrierprincipleinalargearea metal−to−siliconpowerdiode.State−of−the−artgeometryfeatures chromebarriermetal,epitaxialconstructionwithoxidepassivation andmetaloverlapcontact.Ideallysuitedforuseasrectifiersin low−voltage,high−frequency

ONSEMION Semiconductor

安森美半导体安森美半导体公司

1N5818S

SCHOTTKYBARRIERRECTIFIER

CHENDAMicrodiode Electronics (Jiangsu) Co.,Ltd.

深圳辰达半导体深圳辰达半导体有限公司

产品属性

  • 产品编号:

    1N5818-B

  • 制造商:

    Diodes Incorporated

  • 类别:

    分立半导体产品 > 二极管 - 整流器 - 单

  • 包装:

    卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带

  • 二极管类型:

    肖特基

  • 电流 - 平均整流 (Io):

    1A

  • 速度:

    快速恢复 =< 500ns,> 200mA(Io)

  • 不同 Vr、F 时电容:

    110pF @ 4V,1MHz

  • 安装类型:

    通孔

  • 封装/外壳:

    DO-204AL,DO-41,轴向

  • 供应商器件封装:

    DO-41

  • 工作温度 - 结:

    -65°C ~ 125°C

  • 描述:

    DIODE SCHOTTKY 30V 1A DO41

供应商型号品牌批号封装库存备注价格
DID
1535+
1000
询价
DID
23+
1000
全新原装,欢迎来电咨询
询价
Diodes Incorporated
24+
DO-41
9350
独立分销商 公司只做原装 诚心经营 免费试样正品保证
询价
MC
22+
NA
30000
原装现货假一罚十
询价
TAIWAN
1809+
DO-204
16750
就找我吧!--邀您体验愉快问购元件!
询价
24+
N/A
64000
一级代理-主营优势-实惠价格-不悔选择
询价
DiodesInc
23+
DO-41
7750
全新原装优势
询价
500
公司优势库存 热卖中!!
询价
VISHAY/威世
wrockhoundingnet/projects/comp
resources smd pdf digikey243 p
1000
全新原装现货 样品可售
询价
VISHAY/威世
23+
resources smd pdf digikey243 p
5000
原厂授权代理,海外优势订货渠道。可提供大量库存,详
询价
更多1N5818-B供应商 更新时间2024-11-22 17:33:00