首页 >1N5818-CUTTAPE>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
SchottkyBarrierRectifiersReverseVoltage20to40VForwardCurrent1.0A Feature&Dimensions *PlasticpackagehasUnderwritersLaboratoryFlammabilityClassification94V-0 *Lowpowerloss,highefficiency *Foruseinlowvoltagehighfrequencyinverters,freewheeling,andpolarityprotectionapplications *Guardingforovervoltageprotection *Hightempera | LRCLeshan Radio Company 乐山无线电乐山无线电股份有限公司 | LRC | ||
SURFACEMOUNTSCHOTTKYBARRIERRECTIFIERS | PJSEMIDongguan Pingjingsemi Technology Co., Ltd, 平晶半导体东莞市平晶半导体科技有限公司 | PJSEMI | ||
1AmpSchottkyRectifier 1AmpSchottkyRectifier ●SchottkyBarrierRectifier ●GuardRingProtection ●LowForwardVoltage ●HighReliability ●HighCurrentCapability | MicrosemiMicrosemi Corporation 美高森美美高森美公司 | Microsemi | ||
AxialLeadRectifiers AxialLeadRectifiers ThisseriesemploystheSchottkyBarrierprincipleinalargeareametal−to−siliconpowerdiode.State−of−the−artgeometryfeatureschromebarriermetal,epitaxialconstructionwithoxidepassivationandmetaloverlapcontact.Ideallysuitedforuseasrectifiersinlow−volt | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
AxialLeadRectifiersSCHOTTKYBARRIERRECTIFIERS1.0AMPERE20,30and40VOLTS ThisseriesemploystheSchottkyBarrierprincipleinalargearea metal−to−siliconpowerdiode.State−of−the−artgeometryfeatures chromebarriermetal,epitaxialconstructionwithoxidepassivation andmetaloverlapcontact.Ideallysuitedforuseasrectifiersin low−voltage,high−frequency | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
SCHOTTKYBARRIERRECTIFIERS VOLTAGE20to40VoltsCURRENT1.0Ampere FEATURES •PlasticpackagehasUnderwritersLaboratory FlammabilityClassification94V-Outilizing FlameRetardantEpoxyMoldingCompound. •ExceedsenvironmentalstandardsofMIL-S-19500/228 •Foruseinlowvoltage,highfrequencyinverters,f | PANJITPan Jit International Inc. 强茂強茂股份有限公司 | PANJIT | ||
SurfaceMountSchottkyBarrierRectifier | PJSEMIDongguan Pingjingsemi Technology Co., Ltd, 平晶半导体东莞市平晶半导体科技有限公司 | PJSEMI | ||
1.0AMPSCHOTTKYBARRIERRECTIFIERS VOLTAGERANGE20to40VoltsCURRENT1.0Ampere FEATURES *Lowforwardvoltagedrop *Highcurrentcapability *Highreliability *Highsurgecurrentcapability *Epitaxialconstruction | BYTES Bytes | BYTES | ||
1ASCHOTTKYBARRIERRECTIFIERS FEATURES ●UL94V0FLAMERETARDANTEPOXYMOLDINGCOMPOUND ●EXTREMELYLOWVF ●LOWPOWERLOSS/HIGHEFFICIENCY ●LOWSTOREDCHARGE,MAJORITYCARRIERCONDUCTION ●LEADFREE | FRONTIER Frontier Electronics | FRONTIER | ||
1.0ASURFACEMOUNTSCHOTTKYBARRIERRECTIFIER Features ●HighCurrentCapability ●LowForwardVoltageDrop ●GuardRingforTransientProtection ●GlassPackageforHighReliability ●PackagedforSurfaceMountApplications | DIODES Diodes Incorporated | DIODES | ||
1.0ASURFACEMOUNTSCHOTTKYBARRIERRECTIFIER | DIODES Diodes Incorporated | DIODES | ||
AxialLeadRectifiers AxialLeadRectifiers ThisseriesemploystheSchottkyBarrierprincipleinalargeareametal−to−siliconpowerdiode.State−of−the−artgeometryfeatureschromebarriermetal,epitaxialconstructionwithoxidepassivationandmetaloverlapcontact.Ideallysuitedforuseasrectifiersinlow−volt | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
LOWDROPPOWERSCHOTTKYRECTIFIER DESCRIPTION AxialPowerSchottkyrectifiersuitedforSwitchModePowerSuppliesandhighfrequencyDCtoDCconverters.PackagedinDO41thesedevicesareintendedforuseinlowvoltage,highfrequencyinverters,freewheeling,polarityprotectionandsmallbatterychargers. FEATURESANDBENEF | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | ||
AxialLeadRectifiersSCHOTTKYBARRIERRECTIFIERS1.0AMPERE20,30and40VOLTS ThisseriesemploystheSchottkyBarrierprincipleinalargearea metal−to−siliconpowerdiode.State−of−the−artgeometryfeatures chromebarriermetal,epitaxialconstructionwithoxidepassivation andmetaloverlapcontact.Ideallysuitedforuseasrectifiersin low−voltage,high−frequency | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
AxialLeadRectifiers AxialLeadRectifiers ThisseriesemploystheSchottkyBarrierprincipleinalargeareametal−to−siliconpowerdiode.State−of−the−artgeometryfeatureschromebarriermetal,epitaxialconstructionwithoxidepassivationandmetaloverlapcontact.Ideallysuitedforuseasrectifiersinlow−volt | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
AxialLeadRectifiersSCHOTTKYBARRIERRECTIFIERS1.0AMPERE20,30and40VOLTS ThisseriesemploystheSchottkyBarrierprincipleinalargearea metal−to−siliconpowerdiode.State−of−the−artgeometryfeatures chromebarriermetal,epitaxialconstructionwithoxidepassivation andmetaloverlapcontact.Ideallysuitedforuseasrectifiersin low−voltage,high−frequency | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
SCHOTTKYBARRIERRECTIFIER | CHENDAMicrodiode Electronics (Jiangsu) Co.,Ltd. 深圳辰达半导体深圳辰达半导体有限公司 | CHENDA | ||
SCHOTTKYBARRIERRECTIFIER | CHENDAMicrodiode Electronics (Jiangsu) Co.,Ltd. 深圳辰达半导体深圳辰达半导体有限公司 | CHENDA | ||
SCHOTTKYBARRIERRECTIFIER | HORNBYNantong Hornby Electronic Co.,Ltd 南通康比电子南通康比电子有限公司 | HORNBY | ||
SCHOTTKYBARRIERRECTIFIER ReverseVoltage-20to40VoltsForwardCurrent-1.0Ampere FEATURES ◆PlasticpackagehasUnderwritersLaboratory FlammabilityClassification94V-0 ◆Metalsiliconjunction,majoritycarrierconduction ◆Guardringforovervoltageprotection ◆Lowpowerloss,highefficiency ◆Highcurren | SYChangzhou Shunye Electronics Co.,Ltd. 顺烨电子江苏顺烨电子有限公司 | SY |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
DiodesInc |
23+ |
DO-41 |
7750 |
全新原装优势 |
询价 | ||
500 |
公司优势库存 热卖中!! |
询价 | |||||
VISHAY/威世 |
wrockhoundingnet/projects/comp |
resources smd pdf digikey243 p |
1000 |
全新原装现货 样品可售 |
询价 | ||
VISHAY/威世 |
23+ |
resources smd pdf digikey243 p |
5000 |
原厂授权代理,海外优势订货渠道。可提供大量库存,详 |
询价 | ||
DIODES |
05+ |
DO214 |
2000 |
原装现货价格有优势量大可以发货 |
询价 | ||
TOSHIBA |
24+ |
SMD |
47875 |
新进库存/原装 |
询价 | ||
Vishay General Semiconductor - |
24+ |
DO-204AL(DO-41) |
9350 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
询价 | ||
GSC |
1535+ |
381 |
询价 | ||||
GS |
22+ |
NA |
30000 |
原装现货假一罚十 |
询价 | ||
GSC |
23+ |
381 |
全新原装，欢迎来电咨询 |
询价 |
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