1N5819-CUTTAPE规格书库存现货平晶半导体-114ic电子网

首页 >1N5819-CUTTAPE>规格书列表

零件编号	下载&订购	功能描述	制造商&上传企业	LOGO
1N5819-E	文件：182.91 Kbytes Page：7 Pages	SchottkyBarrierRectifiersReverseVoltage20to40VForwardCurrent1.0A Feature&Dimensions PlasticpackagehasUnderwritersLaboratoryFlammabilityClassification94V-0 Lowpowerloss,highefficiency Foruseinlowvoltagehighfrequencyinverters,freewheeling,andpolarityprotectionapplications Guardingforovervoltageprotection *Hightempera	LRCLeshan Radio Company 乐山无线电乐山无线电股份有限公司	LRC
1N5819FL	文件：545.53 Kbytes Page：3 Pages	SURFACEMOUNTSCHOTTKYBARRIERRECTIFIERS	PJSEMIDongguan Pingjingsemi Technology Co., Ltd, 平晶半导体东莞市平晶半导体科技有限公司	PJSEMI
1N5819-FP	文件：586.61 Kbytes Page：4 Pages	AxialLeadSchottkyDiode	MA-COM M/A-COM Technology Solutions, Inc.	MA-COM
1N5819G	文件：116.38 Kbytes Page：3 Pages	1AmpSchottkyRectifier 1AmpSchottkyRectifier ●SchottkyBarrierRectifier ●GuardRingProtection ●LowForwardVoltage ●HighReliability ●HighCurrentCapability	MicrosemiMicrosemi Corporation 美高森美美高森美公司	Microsemi
1N5819G	文件：75.98 Kbytes Page：7 Pages	AxialLeadRectifiers AxialLeadRectifiers ThisseriesemploystheSchottkyBarrierprincipleinalargeareametal−to−siliconpowerdiode.State−of−the−artgeometryfeatureschromebarriermetal,epitaxialconstructionwithoxidepassivationandmetaloverlapcontact.Ideallysuitedforuseasrectifiersinlow−volt	ONSEMION Semiconductor 安森美半导体安森美半导体公司	ONSEMI
1N5819G	文件：523.69 Kbytes Page：4 Pages	Schottkybarrierdiode	LEIDITECHShanghai Leiditech Electronic Technology Co., Ltd 雷卯电子上海雷卯电子科技有限公司	LEIDITECH
1N5819G	文件：249.43 Kbytes Page：9 Pages	AxialLeadRectifiersSCHOTTKYBARRIERRECTIFIERS1.0AMPERE20,30and40VOLTS ThisseriesemploystheSchottkyBarrierprincipleinalargearea metal−to−siliconpowerdiode.State−of−the−artgeometryfeatures chromebarriermetal,epitaxialconstructionwithoxidepassivation andmetaloverlapcontact.Ideallysuitedforuseasrectifiersin low−voltage,high−frequency	ONSEMION Semiconductor 安森美半导体安森美半导体公司	ONSEMI
1N5819H	文件：51.96 Kbytes Page：2 Pages	SCHOTTKYBARRIERRECTIFIERS VOLTAGE20to40VoltsCURRENT1.0Ampere FEATURES •PlasticpackagehasUnderwritersLaboratory FlammabilityClassification94V-Outilizing FlameRetardantEpoxyMoldingCompound. •ExceedsenvironmentalstandardsofMIL-S-19500/228 •Foruseinlowvoltage,highfrequencyinverters,f	PANJITPan Jit International Inc. 强茂強茂股份有限公司	PANJIT
1N5819HS	文件：560.56 Kbytes Page：3 Pages	SurfaceMountSchottkyBarrierRectifier	PJSEMIDongguan Pingjingsemi Technology Co., Ltd, 平晶半导体东莞市平晶半导体科技有限公司	PJSEMI
1N5819HW	文件：103.31 Kbytes Page：4 Pages	1.0ASURFACEMOUNTSCHOTTKYBARRIERRECTIFIER Features •GuardRingDieConstructionforTransientProtection •LowPowerLoss,HighEfficiency •HighSurgeCapability •HighCurrentCapabilityandLowForwardVoltageDrop •ForUseinLowVoltage,HighFrequencyInverters,Free Wheeling,andPolarityProtectionApplication •Lead,Hal	DIODES Diodes Incorporated	DIODES
1N5819HW	文件：82.75 Kbytes Page：3 Pages	1.0ASURFACEMOUNTSCHOTTKYBARRIERRECTIFIER	DIODES Diodes Incorporated	DIODES
1N5819HW	文件：61.61 Kbytes Page：5 Pages	1.0ASURFACEMOUNTSCHOTTKYBARRIERRECTIFIER DescriptionandApplications ThedeviceisasinglerectifierofferinglowVFandexcellenthightemperaturestability.Thisdeviceisidealforuseingeneralrectificationapplications: •ForUseinLowVoltage,HighFrequencyInverters •FreeWheeling •PolarityProtectionApplication Feat	DIODES Diodes Incorporated	DIODES
1N5819HW	文件：297.32 Kbytes Page：5 Pages	1.0ASURFACEMOUNTSCHOTTKYBARRIERRECTIFIER	DIODES Diodes Incorporated	DIODES
1N5819HW	文件：399.22 Kbytes Page：5 Pages	1.0ASURFACE-MOUNTSCHOTTKYBARRIERRECTIFIER FeaturesandBenefits HighSurgeCapability LowPowerLoss,HighEfficiency HighCurrentCapabilityandLowForwardVoltageDrop GuardRingDieConstructionforTransientProtection TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(	DIODES Diodes Incorporated	DIODES
1N5819HW-FDICT-ND	文件：1.13333 Mbytes Page：30 Pages	LAUNCHXL-F28379DOverview	TITexas Instruments 德州仪器美国德州仪器公司	TI
1N5819HWQ	文件：318.66 Kbytes Page：5 Pages	1.0ASURFACEMOUNTSCHOTTKYBARRIERRECTIFIER Features HighSurgeCapability LowPowerLoss,HighEfficiency HighCurrentCapabilityandLowForwardVoltageDrop GuardRingDieConstructionforTransientProtection TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3) Qu	DIODES Diodes Incorporated	DIODES
1N5819HWQ	文件：399.22 Kbytes Page：5 Pages	1.0ASURFACE-MOUNTSCHOTTKYBARRIERRECTIFIER FeaturesandBenefits HighSurgeCapability LowPowerLoss,HighEfficiency HighCurrentCapabilityandLowForwardVoltageDrop GuardRingDieConstructionforTransientProtection TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(	DIODES Diodes Incorporated	DIODES
1N5819L	文件：152.37 Kbytes Page：2 Pages	1.0AMPSCHOTTKYBARRIERRECTIFIERS VOLTAGERANGE20to40VoltsCURRENT1.0Ampere FEATURES Lowforwardvoltagedrop Highcurrentcapability Highreliability Highsurgecurrentcapability *Epitaxialconstruction	BYTES Bytes	BYTES
1N5819-LFR	文件：120.94 Kbytes Page：2 Pages	1ASCHOTTKYBARRIERRECTIFIERS FEATURES ●UL94V0FLAMERETARDANTEPOXYMOLDINGCOMPOUND ●EXTREMELYLOWVF ●LOWPOWERLOSS/HIGHEFFICIENCY ●LOWSTOREDCHARGE,MAJORITYCARRIERCONDUCTION ●LEADFREE	FRONTIER Frontier Electronics	FRONTIER
1N5819M	文件：58.05 Kbytes Page：2 Pages	1.0ASURFACEMOUNTSCHOTTKYBARRIERRECTIFIER	DIODES Diodes Incorporated	DIODES

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供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市纽联电子有限公司	1N5819DICT-ND	VISHAY/威世	wrockhoundingnet/projects/comp	resources smd pdf digikey243 p	1000	全新原装现货样品可售	询价
深圳市安富世纪电子有限公司	1N5819DIP	DIODES	23+	DIP	50000	全新原装正品现货,支持订货	询价
深圳市威雅利发展有限公司	1N5819DIP	DIODES		DIP	1800	一级代理,专注军工、汽车、医疗、工业、新能源、电力	询价
深圳市赛芯源科技有限公司	1N5819DO-214	MIC	19+	SMA	16200	原装正品,现货特价	询价
深圳市益百分电子有限公司	1N5819DO-214	xilinx	22+	SMA	6800		询价
深圳市源铭芯科技有限公司	1N5819DO-214	xilinx	23+	SMA	8000	全新原装	询价
北京天阳诚业科贸有限公司	1N5819DP	ST(先科)	23+	NA	30	肖特基二极管	询价
深圳市威尔健半导体有限公司	1N5819-DS14W	TOSHIBA/GC	23+	SOD123LF	50000	全新原装正品现货,支持订货	询价
深圳廊盛科技有限公司	1N5819-DS14W	TOSHIBA/GC	2022	SOD123LF	80000	原装现货,OEM渠道,欢迎咨询	询价
深圳市得捷芯城科技有限公司	1N5819-DS14W	TOSHIBA/GC	23+	NA/	6250	原装现货,当天可交货,原型号开票	询价

更多1N5819-CUTTAPE供应商更新时间2024-11-22 17:49:00

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