庐
ST13007D
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
s
s
s
s
s
s
s
s
IMPROVED SPECIFICATION:
- LOWER LEAKAGE CURRENT
- TIGHTER GAIN RANGE
- DC CURRENT GAIN PRESELECTION
- TIGHTER STORAGE TIME RANGE
HIGH VOLTAGE CAPABILITY
INTEGRATED FREE-WHEELING DIODE
LOW SPREAD OF DYNAMIC PARAMETERS
MINIMUM LOT-TO-LOT SPREAD FOR
RELIABLE OPERATION
VERY HIGH SWITCHING SPEED
FULLY CHARACTERIZED AT 125
o
C
LARGE RBSOA
3
1
2
TO-220
APPLICATIONS
s
UP TO 120W ELECTRONIC
TRANSFORMERS FOR HALOGEN LAMPS
s
SWITCH MODE POWER SUPPLIES
DESCRIPTION
The device is manufactured using high voltage
Multi Epitaxial Planar technology for high
switching speeds and high voltage capability.
It uses a Cellular Emitter structure to enhance
switching speeds.
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CEV
V
CEO
V
EBO
I
C
I
CM
I
B
I
BM
P
tot
T
stg
T
j
Parameter
Collector-Emitter Voltage (V
BE
= -1.5V)
Collector-Emitter Voltage (I
B
= 0)
Emitter-Base Voltage (I
C
= 0)
Collector Current
Collector Peak Current
Base Current
Base Peak Current
Total Dissipation at T
c
鈮?/div>
25
o
C
Storage Temperature
Max. Operating Junction Temperature
Value
700
400
9
8
16
4
8
80
-65 to 150
150
Unit
V
V
V
A
A
A
A
W
o
o
C
C
April 2003
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