2SK1622
L
, 2SK1622
S
Silicon N-Channel MOS FET
Application
LDPAK
High speed power switching
Features
1
2
Low on-resistance
High speed switching
Low drive current
4 V gate drive device
鈥?Can be driven from 5 V source
鈥?Suitable for motor drive, DC-DC converter,
power switch and solenoid drive
鈥?/div>
鈥?/div>
鈥?/div>
鈥?/div>
3
1
2
3
2, 4
S type
1
1. Gate
2. Drain
3. Source
4. Drain
3
L type
Table 1 Absolute Maximum Ratings
(Ta = 25掳C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Symbol
V
DSS
V
GSS
I
D
I
D(pulse)
*
I
DR
Pch**
Tch
Tstg
Ratings
60
卤20
25
100
25
50
150
鈥?5 to +150
Unit
V
V
A
A
A
W
掳C
掳C
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*
PW
鈮?/div>
10 碌s, duty cycle
鈮?/div>
1 %
**
Value at T
C
= 25 掳C
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