2SK3679-01MR Datasheet

  • 2SK3679-01MR

  • N-CHANNEL SILICON POWER MOSFET

  • 110.79KB

  • 4页

  • FUJI

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Fuji Power MOSFET SuperFAP-G series Target Specification
PRELIMINARY
2SK3679-01MR (900V/1.58鈩?9A)
1) Package
Items
Drain-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Gate-Source Voltage
Repetitive and Non-Repetitive
Maximum Avalanche Current
Non-Repetitive
Maximum Avalanche Energy
Maximum Drain-Source dV/dt
Peak Diode recovery dV/dt
Maximum Power Dissipation
Operating and Storage
Temperature range
TO-220F
2) Absolute Maximum Ratings (Tc=25鈩冣€僽nless otherwise specified)
Symbols
V
DS
I
D
I
D(pulse)
V
GS
I
AR
E
AS
dV
DS
/dt
dV/dt
P
D鈥冿紶锛碿=25鈩?/div>
P
D @Ta=25鈩?/div>
T
ch
T
stg
Ratings
900
卤9
卤36
卤30
9
287.7
20
5
95
2.16
150
-55
鈭?/div>
+150
Units
V
A
A
V
A
mJ
*1
This material and the information herein is the property of
Fuji Electric Co.,Ltd. They shall be neither reproduced, copied,
lent, or disclosed in any way whatsoever for the use of any
third party nor used for the manufacturing purposes without
the express written consent of Fuji Electric Co.,Ltd.
kV/us
kV/us *2
W
W
鈩?/div>
鈩?/div>
3)Electrical Characteristics (Tch=25鈩?unless otherwise specified)
Items
Symbols
Test Conditions
I
D
=250uA
V
GS
=0V
Drain-Source Breakdown Voltage BV
DSS
I
D
=250uA
V
DS
=V
GS
V
GS
(th)
Gate Threshold Voltage
V
DS
=900V
T
ch
=25鈩?/div>
Zero Gate Voltage Drain Current I
DSS
V
GS
=0V
T
ch
=125鈩?/div>
V
GS
=卤30V
V
DS
=0V
I
GSS
Gate-Source Leakage Current
Drain-Source On-State Resistance R
DS
(on)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate to Source Charge
Gate to Drain (Miller) Charge
Avalanche Capability
Diode Forward On-Voltage
C
iss
C
oss
C
rss
Qg
Qgs
Qgd
I
AV
V
SD
I
D
=4.5A
VGS=10V
min.
900
3.0
---
---
---
---
---
---
---
---
---
---
12
---
typ.
---
---
---
---
---
---
1200
140
7
32
7
7
---
1.0
max.
---
5.0
25
250
100
1.58
---
---
---
---
---
---
---
1.5
Units
V
V
渭A
渭A
nA
V
DS
=25V
V
GS
=0V
f=1MHz
Vcc=450V
I
D
=9A
V
GS
=10V
L=6.51mH
Tch=25鈩?/div>
I
F
=9A,VGS=0V,Tch=25鈩?/div>
pF
nC
A
V
4) Thermal Characteristics
Items
Channel to Case
Channel to Ambient
Symbols
Rth(ch-c)
Rth(ch-a)
Test Conditions
min.
typ.
max.
1.316
58.0
Units
鈩?W
鈩?W
*1 L=6.51mH,Vcc=90V
*2 I
F
鈮?/div>
-I
D
,-di/dt=50A/
s,Vcc
鈮?/div>
BV
DSS
,Tch
鈮?/div>
150
C
DATE
DRAWN
Sep.-10-'02
CHECKED
Sep.-10-'02
REVISIONS
MA4LE
NAME
APPROVED
DWG.NO.
Fuji Electric Co.,Ltd.
MT5F12613
1/1

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