MITSUBISHI IGBT MODULES
CM300DU-12NFH
HIGH POWER SWITCHING USE
MAXIMUM RATINGS (Tj = 25°C)
Symbol
VCES
VGES
IC
Parameter
Collector-emitter voltage
Gate-emitter voltage
Conditions
Ratings
600
Unit
V
G-E Short
C-E Short
Operation
Pulse
±20
V
300
A
Collector current
Emitter current
600
A
ICM
(Note 2)
(Note 2)
300
A
IE
(Note 1
)
)
)
Operation
Pulse
600
A
IEM (Note 1
PC (Note 3
780
W
W
°C
°C
V
Maximum collector dissipation TC = 25°C
Maximum collector dissipation TC’ = 25°C*4
Junction temperature
1250
PC’ (Note 3
)
–40 ~ +150
–40 ~ +125
2500
Tj
Tstg
Viso
—
Storage temperature
Isolation voltage
Mounting torque
Weight
Main Terminal to base plate, AC 1 min.
Main Terminal M6
3.5 ~ 4.5
3.5 ~ 4.5
400
N • m
N • m
g
—
Mounting holes M6
—
Typical value
ELECTRICAL CHARACTERISTICS (Tj = 25°C)
Limits
Typ.
—
Symbol
Parameter
Test conditions
VCE = VCES, VGE = 0V
Unit
mA
Min.
—
Max.
1
Collector cutoff current
ICES
Gate-emitter threshold voltage IC = 30mA, VCE = 10V
5
6
7
V
VGE(th)
IGES
Gate leakage current
Collector-emitter
VGE = VGES, VCE = 0V
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
2.1
—
2.0
1.95
—
0.5
2.7
—
µA
Tj = 25°C
VCE(sat)
IC = 300A, VGE = 15V
V
saturation voltage
Input capacitance
Output capacitance
(Note 4)
Tj = 125°C
Cies
Coes
Cres
QG
83
nF
nF
nF
nC
ns
ns
ns
ns
ns
VCE = 10V
VGE = 0V
5.4
3.0
—
—
Reverse transfer capacitance
Total gate charge
—
VCC = 300V, IC = 300A, VGE = 15V
1860
—
Turn-on delay time
td(on)
tr
350
150
700
150
200
—
Turn-on rise time
VCC = 300V, IC = 300A
VGE1 = VGE2 = 15V
—
Turn-off delay time
td(off)
tf
—
Turn-off fall time
RG = 4.2Ω, Inductive load switching operation
IE = 300A
—
Reverse recovery time
Reverse recovery charge
Emitter-collector voltage
trr
(Note 1)
—
Qrr (Note 1
)
5.5
—
µC
V
VEC(Note 1
Rth(j-c)Q
Rth(j-c)R
Rth(c-f)
)
2.6
0.16
0.24
—
IE = 300A, VGE = 0V
IGBT part (1/2 module)
FWDi part (1/2 module)
—
°C/W
°C/W
°C/W
°C/W
Ω
Thermal resistance*1
—
Case to fin, Thermal compound Applied*2 (1/2 module)
Contact thermal resistance
Thermal resistance
0.04
—
Rth(j-c’)Q
RG
Tc measured point is just under the chips (1/2 module)
0.10*3
—
21
External gate resistance
1 : TC measured point is shown in page OUTLINE DRAWING.
2 : Typical value is measured by using Shin-etsu Silicone “G-746”.
3 : If you use this value, Rth(f-a) should be measured just under the chips.
4 : TC’ measured point is just under the chips.
*
*
*
*
Note 1. IE, VEC, trr & Qrr represent characteristics of the anti-parallel, emitter to collector free-wheel diode (FWDi).
2. Pulse width and repetition rate should be such that the device junction temp. (Tj) does not exceed Tjmax rating.
3. Junction temperature (Tj) should not increase beyond 150°C.
4. No short circuit capability is designed.
Feb.2004