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    • 北京元坤伟业科技有限公司

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    产品型号CNY17-3-X009的Datasheet PDF文件预览

    CNY17  
    Vishay Semiconductors  
    Optocoupler, Phototransistor Output, With Base Connection  
    Features  
    • Isolation Test Voltage 5300 V  
    RMS  
    • Long Term Stability  
    1
    6
    A
    C
    B
    C
    E
    • Industry Standard Dual-in-Line Package  
    • Lead-free component  
    • Component in accordance to RoHS 2002/95/EC  
    and WEEE 2002/96/EC  
    e3  
    5
    4
    2
    3
    NC  
    Agency Approvals  
    i179004  
    • Underwriters Lab File #E52744  
    System Code H or J  
    • DIN EN 60747-5-2 (VDE0884)  
    DIN EN 60747-5-5 pending  
    Order Information  
    Part  
    Remarks  
    • BSI IEC60950 IEC60065  
    • FIMKO  
    CNY17-1  
    CTR 40 - 80 %, DIP-6  
    CNY17-2  
    CTR 63 - 125 %, DIP-6  
    CNY17-3  
    CTR 100 - 200 %, DIP-6  
    Description  
    CNY17-4  
    CTR 160 - 320 %, DIP-6  
    The CNY17 is an optically coupled pair consisting of  
    a Gallium Arsenide infrared emitting diode optically  
    coupled to a silicon NPN phototransistor.  
    Signal information, including a DC level, can be trans-  
    mitted by the device while maintaining a high degree  
    of electrical isolation between input and output.  
    CNY17-1X006  
    CNY17-1X007  
    CNY17-1X009  
    CNY17-2X006  
    CNY17-2X007  
    CNY17-2X009  
    CNY17-3X006  
    CNY17-3X007  
    CNY17-3X009  
    CNY17-4X006  
    CNY17-4X007  
    CNY17-4X009  
    CTR 40 - 80 %, DIP-6 400 mil (option 6)  
    CTR 40 - 80 %, SMD-6 (option 7)  
    CTR 40 - 80 %, SMD-6 (option 9)  
    CTR 63 - 125 %, DIP-6 400 mil (option 6)  
    CTR 63 - 125 %, SMD-6 (option 7)  
    CTR 63 - 125 %, SMD-6 (option 9)  
    CTR 100 - 200 %, DIP-6 400 mil (option 6)  
    CTR 100 - 200 %, SMD-6 (option 7)  
    CTR 100 - 200 %, SMD-6 (option 9)  
    CTR 160 - 320 %, DIP-6 400 mil (option 6)  
    CTR 160 - 320 %, SMD-6 (option 7)  
    CTR 160 - 320 %, SMD-6 (option 9)  
    The CNY17 can be used to replace relays and trans-  
    formers in many digital interface applications, as well  
    as analog applications such as CRT modulation.  
    For additional information on the available options refer to  
    Option Information.  
    Document Number 83606  
    Rev. 1.5, 26-Oct-04  
    www.vishay.com  
    1
    CNY17  
    Vishay Semiconductors  
    Absolute Maximum Ratings  
    Tamb = 25 °C, unless otherwise specified  
    Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is  
    not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute  
    Maximum Rating for extended periods of the time can adversely affect reliability.  
    Input  
    Parameter  
    Test condition  
    Symbol  
    VR  
    Value  
    6.0  
    Unit  
    V
    Reverse voltage  
    Forward current  
    Surge current  
    IF  
    60  
    2.5  
    100  
    mA  
    A
    t ≤ 10 µs  
    IFSM  
    Pdiss  
    Power dissipation  
    mW  
    Output  
    Parameter  
    Test condition  
    Symbol  
    BVCEO  
    Value  
    70  
    Unit  
    V
    Collector-emitter breakdown  
    voltage  
    Emitter-base breakdown  
    voltage  
    BVEBO  
    7.0  
    V
    Collector current  
    IC  
    IC  
    50  
    mA  
    mA  
    mW  
    t < 1.0 ms  
    100  
    150  
    Power dissipation  
    Pdiss  
    Coupler  
    Parameter  
    Test condition  
    Symbol  
    VISO  
    Value  
    5300  
    Unit  
    Isolation test voltage (between t = 1 sec  
    emitter & detector referred to  
    climate DIN 50014,  
    VRMS  
    part 2, Nov. 74)  
    Creepage distance  
    Clearance distance  
    ≥ 7.0  
    ≥ 7.0  
    ≥ 0.4  
    mm  
    mm  
    mm  
    Isolation thickness between  
    emitter and detector  
    Comparative tracking index per  
    DIN IEC 112/VDE0303, part 1  
    175  
    ≥ 1012  
    ≥1 011  
    Isolation resistance  
    VIO = 500 V, Tamb = 25 °C  
    IO = 500 V, Tamb = 100 °C  
    RIO  
    RIO  
    Ω
    Ω
    V
    Storage temperature  
    Operating temperature  
    Soldering temperature  
    Tstg  
    Tamb  
    Tsld  
    - 55 to + 150  
    °C  
    °C  
    °C  
    - 55 to + 100  
    260  
    max. 10 s, dip soldering:  
    distance to seating plane  
    ≥ 1.5 mm  
    www.vishay.com  
    2
    Document Number 83606  
    Rev. 1.5, 26-Oct-04  
    CNY17  
    Vishay Semiconductors  
    Electrical Characteristics  
    Tamb = 25 °C, unless otherwise specified  
    Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering  
    evaluation. Typical values are for information only and are not part of the testing requirements.  
    Input  
    Parameter  
    Test condition  
    IF = 60 mA  
    R = 10 mA  
    Symbol  
    VF  
    Min  
    6.0  
    Typ.  
    1.25  
    Max  
    1.65  
    Unit  
    V
    Forward voltage  
    Breakdown voltage  
    Reserve current  
    Capacitance  
    I
    VBR  
    IR  
    V
    µA  
    V
    V
    R = 6.0 V  
    R = 0 V, f = 1.0 MHz  
    0.01  
    25  
    10  
    CO  
    Rth  
    pF  
    Thermal resistance  
    750  
    K/W  
    Output  
    Parameter  
    Test condition  
    VCE = 5.0 V, f = 1.0 MHz  
    Symbol  
    CCE  
    Min  
    Typ.  
    5.2  
    Max  
    Unit  
    pF  
    Collector-emitter capacitance  
    Collector - base capacitance  
    Emitter - base capacitance  
    Thermal resistance  
    V
    V
    CB = 5.0 V, f = 1.0 MHz  
    EB = 5.0 V, f = 1.0 MHz  
    CCB  
    CEB  
    Rth  
    6.5  
    7.5  
    pF  
    pF  
    500  
    K/W  
    Coupler  
    Parameter  
    Test condition  
    Part  
    Symbol  
    VCEsat  
    Min  
    Typ.  
    0.25  
    Max  
    Unit  
    Collector-emitter saturation  
    voltage  
    VF = 10 mA, IC = 2.5 mA  
    0.4  
    V
    Coupling capacitance  
    CC  
    0.6  
    2.0  
    pF  
    nA  
    Collector-emitter leakage  
    current  
    V
    CE = 10 V, ICEO  
    CNY17-1  
    ICEO  
    50  
    CNY17-2  
    CNY17-3  
    CNY17-4  
    ICEO  
    ICEO  
    ICEO  
    2.0  
    5.0  
    5.0  
    50  
    nA  
    nA  
    nA  
    100  
    100  
    Current Transfer Ratio  
    Current Transfer Ratio and collector-emitter leakage current by dash number (Tamb°C)  
    Parameter  
    Test condition  
    Part  
    Symbol  
    CTR  
    Min  
    Typ.  
    30  
    Max  
    Unit  
    %
    IC/IF  
    IF = 10 mA, VCE = 5.0 V  
    CNY17-1  
    40  
    80  
    CNY17-2  
    CNY17-3  
    CNY17-4  
    CNY17-1  
    CTR  
    CTR  
    CTR  
    CTR  
    63  
    100  
    160  
    13  
    125  
    200  
    320  
    %
    %
    %
    %
    IF = 1.0 mA, VCE = 5.0 V  
    CNY17-2  
    CNY17-3  
    CNY17-4  
    CTR  
    CTR  
    CTR  
    22  
    34  
    56  
    45  
    70  
    90  
    %
    %
    %
    Document Number 83606  
    Rev. 1.5, 26-Oct-04  
    www.vishay.com  
    3
    CNY17  
    Vishay Semiconductors  
    Switching Characteristics  
    Linear operation (without saturation)  
    Parameter  
    Turn-on time  
    Test condition  
    IF = 10 mA, VCC = 5.0 V, RL = 75 W  
    F = 10 mA, VCC = 5.0 V, RL = 75 W  
    IF = 10 mA, VCC = 5.0 V, RL = 75 W  
    F = 10 mA, VCC = 5.0 V, RL = 75 W  
    IF = 10 mA, VCC = 5.0 V,  
    Symbol  
    ton  
    Min  
    Typ.  
    3.0  
    Max  
    Unit  
    µs  
    Rise time  
    I
    tr  
    toff  
    tf  
    2.0  
    2.3  
    2.0  
    250  
    µs  
    µs  
    Turn-off time  
    Fall time  
    I
    µs  
    Cut-off frequency  
    fCO  
    kHz  
    Switching operation (with saturation)  
    Parameter  
    Test condition  
    IF = 20 mA  
    IF = 10 mA  
    Part  
    Symbol  
    ton  
    Min  
    Typ.  
    3.0  
    Max  
    Unit  
    Turn-on time  
    Rise time  
    CNY17-1  
    µs  
    µs  
    µs  
    µs  
    µs  
    µs  
    µs  
    µs  
    µs  
    µs  
    µs  
    µs  
    µs  
    µs  
    µs  
    µs  
    CNY17-2  
    CNY17-3  
    CNY17-4  
    CNY17-1  
    CNY17-2  
    CNY17-3  
    CNY17-4  
    CNY17-1  
    CNY17-2  
    CNY17-3  
    CNY17-4  
    CNY17-1  
    CNY17-2  
    CNY17-3  
    CNY17-4  
    ton  
    ton  
    ton  
    tf  
    4.2  
    4.2  
    6.0  
    2.0  
    3.0  
    3.0  
    4.6  
    18  
    IF = 5.0 mA  
    IF = 20 mA  
    IF = 10 mA  
    tf  
    tf  
    IF = 5.0 mA  
    IF = 20 mA  
    IF = 10 mA  
    tf  
    Turn-off time  
    Fall time  
    toff  
    toff  
    toff  
    toff  
    tf  
    23  
    23  
    IF = 5.0 mA  
    IF = 20 mA  
    IF = 10 mA  
    25  
    11  
    tf  
    14  
    tf  
    14  
    IF = 5.0 mA  
    tf  
    15  
    Typical Characteristics (Tamb = 25 °C unless otherwise specified)  
    IF  
    IF  
    RL = 75 Ω  
    1 KΩ  
    VCC = 5 V  
    VCC = 5 V  
    IC  
    47 Ω  
    icny17_02  
    icny17_01  
    Figure 1. Linear Operation ( without Saturation)  
    Figure 2. Switching Operation (with Saturation)  
    www.vishay.com  
    4
    Document Number 83606  
    Rev. 1.5, 26-Oct-04  
    CNY17  
    Vishay Semiconductors  
    (T = –25°C, V  
    CE  
    C
    = 5.0 V)  
    A
    (T = 50°C, V  
    = 5.0 V)  
    CE  
    I
    /I = f (I )  
    F F  
    A
    I
    /I = f (I  
    )
    C
    F
    F
    1
    2
    3
    4
    1
    2
    3
    4
    icny17_06  
    icny17_03  
    Figure 3. Current Transfer Ratio vs. Diode Current  
    Figure 6. Current Transfer Ratio vs. Diode Current  
    = 5.0 V)  
    (T  
    I
    = 0 °C, V  
    CE  
    )
    A
    /I  
    = f (I  
    C
    F
    F
    (T = 75°C, V  
    CE  
    = 5.0 V)  
    A
    1
    2
    3
    1
    2
    3
    4
    icny17_07  
    icny17_04  
    Figure 4. Current Transfer Ratio vs. Diode Current  
    Figure 7. Current Transfer Ratio vs. Diode Current  
    (T = 25°C, V  
    = 5.0 V)  
    A
    CE  
    (I = 10 mA, V  
    = 5.0 V)  
    CE  
    F
    I
    /I = f (I )  
    F F  
    C
    I /I = f (T)  
    C F  
    4
    3
    2
    1
    2
    3
    4
    1
    T
    icny17_08  
    icny17_05  
    A
    Figure 5. Current Transfer Ratio vs. Diode Current  
    Figure 8. Current Transfer Ratio (CTR) vs. Temperature  
    Document Number 83606  
    Rev. 1.5, 26-Oct-04  
    www.vishay.com  
    5
    CNY17  
    Vishay Semiconductors  
    I
    = f (V  
    )
    CE  
    C
    ( I = 0)  
    F
    I
    = f (V,T)  
    CEO  
    ( I = 0)  
    F
    icny17_12  
    icny17_09  
    Figure 9. Transistor Characteristics  
    Figure 12. Collector-Emitter off-state Current  
    V
    = f (I )  
    C
    CEsat  
    I
    = f (V )  
    CE  
    C
    icny17_13  
    icny17_10  
    Figure 10. Output Characteristics  
    Figure 13. Saturation Voltage vs Collector Current and Modulation  
    Depth CNY17-1  
    V
    = f (I )  
    F
    F
    V
    = f (I )  
    C
    CEsat  
    icny17_14  
    icny17_11  
    Figure 11. Forward Voltage  
    Figure 14. Saturation Voltage vs. Collector Current and Modulation  
    Depth CNY17-2  
    www.vishay.com  
    6
    Document Number 83606  
    Rev. 1.5, 26-Oct-04  
    CNY17  
    Vishay Semiconductors  
    V
    = f (I )  
    C
    CEsat  
    icny17_15  
    Figure 15. Saturation Voltage vs. Collector Current and Modulation  
    Depth CNY17-3  
    V
    V
    = f (I )  
    C
    CEsat  
    icny17_16  
    Figure 16. Saturation Voltage vs. Collector Current and Modulation  
    Depth CNY17-4  
    P
    = f (T )  
    A
    tot  
    icny17_18  
    Figure 17. Permissible Power Dissipation for Transistor and Diode  
    Document Number 83606  
    Rev. 1.5, 26-Oct-04  
    www.vishay.com  
    7
    CNY17  
    Vishay Semiconductors  
    Package Dimensions in Inches (mm)  
    pin one ID  
    2
    1
    3
    .248 (6.30)  
    .256 (6.50)  
    ISO Method A  
    4
    5
    6
    .335 (8.50)  
    .343 (8.70)  
    .300 (7.62)  
    typ.  
    .048 (0.45)  
    .022 (0.55)  
    .039  
    (1.00)  
    Min.  
    .130 (3.30)  
    .150 (3.81)  
    18°  
    4°  
    .114 (2.90)  
    .130 (3.0)  
    typ.  
    .031 (0.80) min.  
    3°–9°  
    .010 (.25)  
    typ.  
    .031 (0.80)  
    .035 (0.90)  
    .018 (0.45)  
    .022 (0.55)  
    .300–.347  
    (7.62–8.81)  
    .100 (2.54) typ.  
    i178004  
    Option 7  
    Option 6  
    Option 9  
    0.375 (9.53)  
    0.395 (10.03)  
    0.300(7.62)  
    TYP.  
    0.407(10.36)  
    0.391(9.96)  
    0.307(7.8)  
    0.291(7.4)  
    0.300 (7.62)  
    ref.  
    0.028 (0.7)  
    MIN.  
    0.180(4.6)  
    0.160(4.1)  
    0.0040 (0.102)  
    0.0098 (0.249)  
    0.012 (0.30) ty.p  
    0.315(8.0)  
    MIN  
    .
    0.020 (0.51)  
    0.040 (1.02)  
    0.014(0.35)  
    0.010(0.25)  
    0.331(8.4)  
    MIN.  
    15° max.  
    0.315 (8.00)  
    0.400(10.16)  
    0.430(10.92)  
    min.  
    0.406(10.3)  
    MAX.  
    18450  
    www.vishay.com  
    Document Number 83606  
    Rev. 1.5, 26-Oct-04  
    8
    CNY17  
    Vishay Semiconductors  
    Ozone Depleting Substances Policy Statement  
    It is the policy of Vishay Semiconductor GmbH to  
    1. Meet all present and future national and international statutory requirements.  
    2. Regularly and continuously improve the performance of our products, processes, distribution and operating  
    systems with respect to their impact on the health and safety of our employees and the public, as well as  
    their impact on the environment.  
    It is particular concern to control or eliminate releases of those substances into the atmosphere which are  
    known as ozone depleting substances (ODSs).  
    The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs  
    and forbid their use within the next ten years. Various national and international initiatives are pressing for an  
    earlier ban on these substances.  
    Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use  
    of ODSs listed in the following documents.  
    1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments  
    respectively  
    2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental  
    Protection Agency (EPA) in the USA  
    3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.  
    Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting  
    substances and do not contain such substances.  
    We reserve the right to make changes to improve technical design  
    and may do so without further notice.  
    Parameters can vary in different applications. All operating parameters must be validated for each  
    customer application by the customer. Should the buyer use Vishay Semiconductors products for any  
    unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all  
    claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal  
    damage, injury or death associated with such unintended or unauthorized use.  
    Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany  
    Document Number 83606  
    Rev. 1.5, 26-Oct-04  
    www.vishay.com  
    9
    Legal Disclaimer Notice  
    Vishay  
    Notice  
    Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,  
    or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.  
    Information contained herein is intended to provide a product description only. No license, express or implied, by  
    estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's  
    terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express  
    or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness  
    for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.  
    The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.  
    Customers using or selling these products for use in such applications do so at their own risk and agree to fully  
    indemnify Vishay for any damages resulting from such improper use or sale.  
    Document Number: 91000  
    Revision: 08-Apr-05  
    www.vishay.com  
    1
    配单直通车
    CNY17-3-X007T产品参数
    型号:CNY17-3-X007T
    生命周期：Obsolete
    IHS 制造商：SIEMENS A G
    Reach Compliance Code：unknown
    HTS代码：8541.40.80.00
    风险等级：5.57
    Is Samacsys：N
    其他特性：UL RECOGNIZED
    Coll-Emtr Bkdn Voltage-Min：70 V
    配置：SINGLE
    标称电流传输比：100%
    最大暗电源：100 nA
    最大正向电流：0.06 A
    最大绝缘电压：5300 V
    元件数量：1
    最高工作温度：100 °C
    最低工作温度：-55 °C
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