欢迎访问ic37.com |
会员登录 免费注册
发布采购
所在地: 型号: 精确
  • 批量询价
  •  
  • 供应商
  • 型号
  • 数量
  • 厂商
  • 封装
  • 批号
  • 交易说明
  • 询价
更多
  • CHM75A3PAGP图
  • 深圳市惊羽科技有限公司

     该会员已使用本站11年以上
  • CHM75A3PAGP
  • 数量18800 
  • 厂家CHENMKO-力勤 
  • 封装TO-252-3 
  • 批号▉▉:2年内 
  • ▉▉¥10一一有问必回一一有长期订货一备货HK仓库
  • QQ:43871025QQ:43871025 复制
  • 131-4700-5145---Q-微-恭-候---有-问-秒-回 QQ:43871025
  • CHM75图
  • 北京首天国际有限公司

     该会员已使用本站16年以上
  • CHM75
  • 数量1692 
  • 厂家MOTOROLA 
  • 封装DIP 
  • 批号2024+ 
  • 百分百原装正品,现货库存
  • QQ:528164397QQ:528164397 复制
    QQ:1318502189QQ:1318502189 复制
  • 010-62565447 QQ:528164397QQ:1318502189
  • CHM75图
  • 深圳市一线半导体有限公司

     该会员已使用本站11年以上
  • CHM75
  • 数量22000 
  • 厂家原厂品牌 
  • 封装原厂外观 
  • 批号 
  • 全新原装部分现货其他订货
  • QQ:2881493920QQ:2881493920 复制
    QQ:2881493921QQ:2881493921 复制
  • 0755-88608801多线 QQ:2881493920QQ:2881493921

产品型号CHM75A3PAPT的Datasheet PDF文件预览

CHENMKO ENTERPRISE CO.,LTD  
CHM75A3PAPT  
SURFACE MOUNT  
N-Channel Enhancement Mode Field Effect Transistor  
VOLTAGE 25 Volts CURRENT 60 Ampere  
APPLICATION  
* Servo motor control.  
* Power MOSFET gate drivers.  
* Other switching applications.  
TO-252A  
FEATURE  
* Small package. (TO-252A)  
.280 (7.10)  
.238 (6.05)  
* Super high dense cell design for extremely low RDS(ON).  
.094 (2.40)  
.087 (2.20)  
.035 (0.89)  
.220 (5.59)  
.195 (4.95)  
* High power and current handing capability.  
.018 (0.45)  
CONSTRUCTION  
* N-Channel Enhancement  
(1)  
(3) (2)  
.024 (0.61)  
.016 (0.40)  
.035 (0.90)  
.025 (0.64)  
.102 (2.59)  
.078 (1.98)  
1 Gate  
2 Source  
3 Drain( Heat Sink )  
D
(3)  
CIRCUIT  
(1)  
G
Dimensions in inches and (millimeters)  
TO-252A  
(2)  
S
Absolute Maximum Ratings TA = 25°C unless otherwise noted  
Symbol  
Parameter  
CHM75A3PAPT  
Units  
VDSS  
Drain-Source Voltage  
Gate-Source Voltage  
25  
V
VGSS  
±20  
V
Maximum Drain Current - Continuous  
- Pulsed  
60  
ID  
A
(Note 3)  
200  
PD  
TJ  
56  
W
°C  
°C  
Maximum Power Dissipation at Tc = 25°C  
Operating Temperature Range  
-55 to 150  
-55 to 150  
Storage Temperature Range  
STG  
T
Note : 1. Surface Mounted on FR4 Board , t <=10sec  
2. Pulse Test , Pulse width <= 300us , Duty Cycle <= 2%  
3. Repetitive Rating , Pulse width linited by maximum junction temperature  
4. Guaranteed by design , not subject to production trsting  
Thermal characteristics  
(Note 1)  
R
θJA  
Thermal Resistance, Junction-to-Ambient  
50  
°C/W  
2007-06  
ELECTRICAL CHARACTERISTIC ( CHM75A3PAPT )  
Electrical Characteristics TA = 25°C unless otherwise noted  
Symbol  
Parameter  
Conditions  
Min  
Typ  
Max  
Units  
OFF CHARACTERISTICS  
BVDSS  
Drain-Source Breakdown Voltage  
VGS  
V
= 0 V, I  
D
= 250 µA  
25  
µ
DSS  
A
I
Zero Gate Voltage Drain Current  
Gate-Body Leakage  
VDS = 25 V, VGS = 0 V  
VGS = 20V,VDS = 0 V  
VGS = -20V, VDS = 0 V  
1
GSSF  
I
+100  
-100  
n
n
A
A
GSSR  
I
Gate-Body Leakage  
(Note 2)  
ON CHARACTERISTICS  
VGS(th)  
1
3
9
V
Gate Threshold Voltage  
VDS = VGS, ID = 250 µA  
7
V
V
GS=10V, I  
D
=30A  
=30A  
RDS(ON)  
m
Static Drain-Source On-Resistance  
Forward Transconductance  
GS=4.5V, I  
D
10  
12  
13  
gFS  
S
VDS =10V, ID = 15A  
Dynamic Characteristics  
1180  
Ciss  
Coss  
Crss  
Input Capacitance  
VDS = 15V, VGS = 0V,  
f = 1.0 MHz  
Output Capacitance  
270  
145  
pF  
Reverse Transfer Capacitance  
SWITCHING CHARACTERISTICS (Note 4)  
10  
13  
Total Gate Charge  
Gate-Source Charge  
Gate-Drain Charge  
Qg  
V
V
DS=15V, I  
GS=5V  
D
=20A  
nC  
nS  
Qgs  
3.6  
2.9  
12  
4
gd  
Q
ton  
tr  
Turn-On Time  
Rise Time  
25  
10  
65  
15  
VDD  
15V  
=
,
D
I =1A  
GS  
V
= 10 V  
toff  
tf  
Turn-Off Time  
Fall Time  
32  
6
GEN= 6  
R
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS  
S
I
50  
A
Drain-Source Diode Forward Current  
Drain-Source Diode Forward Voltage  
,
S
I = 20A  
GS  
VSD  
0.85  
1.2  
V
V
= 0 V  
RATING CHARACTERISTIC CURVES ( CHM75A3PAPT )  
Typical Electrical Characteristics  
Figure 1. Output Characteristics  
Figure 2. Transfer Characteristics  
100  
100  
80  
GS=  
V
10,8,6,4V  
80  
60  
40  
60  
40  
20  
0
3.0V  
GS=  
V
J=125°C  
T
J=25°C  
T
20  
J=-55°C  
T
0
0
2.0  
3.0  
0
1.0  
4.0  
5.0  
1.0  
2.0  
3.0  
4.0  
VDS , DRAIN-TO-SOURCE VOLTAGE (V)  
VGS , GATE-TO-SOURCE VOLTAGE (V)  
Figure 4. On-Resistance Variation with  
Temperature  
Figure 3. Gate Charge  
2.2  
1.9  
1.6  
10  
VGS=10V  
VDS=15V  
ID=20A  
ID=30A  
8
6
4
2
1.3  
1.0  
0.7  
0.4  
0
0
4
8
12  
16  
20  
-100  
-50  
0
50  
100  
150  
200  
Qg , TOTAL GATE CHARGE (nC)  
T
J
, JUNCTION TEMPERATURE (°C)  
Figure 5. Gate Threshold Variation with  
Temperature  
1.3  
VDS=VGS  
ID=250uA  
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
0.6  
-50  
-25  
0
25  
50  
75  
100  
125  
150  
T
J
, JUNCTION TEMPERATURE (°C)  
配单直通车
CHM8030LANGP产品参数
型号:CHM8030LANGP
生命周期:Contact Manufacturer
包装说明:,
Reach Compliance Code:unknown
风险等级:5.61
Base Number Matches:1
  •  
  • 供货商
  • 型号 *
  • 数量*
  • 厂商
  • 封装
  • 批号
  • 交易说明
  • 询价
批量询价选中的记录已选中0条,每次最多15条。
 复制成功!