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产品型号CRCW12061072F的Datasheet PDF文件预览

June 2003  
LM2727/LM2737  
N-Channel FET Synchronous Buck Regulator Controller  
for Low Output Voltages  
General Description  
Features  
n Input power from 2.2V to 16V  
The LM2727 and LM2737 are high-speed, synchronous,  
switching regulator controllers. They are intended to control  
currents of 0.7A to 20A with up to 95% conversion efficien-  
cies. The LM2727 employs output over-voltage and under-  
voltage latch-off. For applications where latch-off is not de-  
sired, the LM2737 can be used. Power up and down  
sequencing is achieved with the power-good flag, adjustable  
soft-start and output enable features. The LM2737 and  
LM2737 operate from a low-current 5V bias and can convert  
from a 2.2V to 16V power rail. Both parts utilize a fixed-  
frequency, voltage-mode, PWM control architecture and the  
switching frequency is adjustable from 50kHz to 2MHz by  
adjusting the value of an external resistor. Current limit is  
achieved by monitoring the voltage drop across the on-  
resistance of the low-side MOSFET, which enhances low  
duty-cycle operation. The wide range of operating frequen-  
cies gives the power supply designer the flexibility to fine-  
tune component size, cost, noise and efficiency. The adap-  
tive, non-overlapping MOSFET gate-drivers and high-side  
bootstrap structure helps to further maximize efficiency. The  
high-side power FET drain voltage can be from 2.2V to 16V  
and the output voltage is adjustable down to 0.6V.  
n Output voltage adjustable down to 0.6V  
n Power Good flag, adjustable soft-start and output enable  
for easy power sequencing  
n Output over-voltage and under-voltage latch-off  
(LM2727)  
n Output over-voltage and under-voltage flag (LM2737)  
n Reference Accuracy: 1.5% (0˚C - 125˚C)  
n Current limit without sense resistor  
n Soft start  
n Switching frequency from 50 kHz to 2 MHz  
n TSSOP-14 package  
Applications  
n Cable Modems  
n Set-Top Boxes/ Home Gateways  
n DDR Core Power  
n High-Efficiency Distributed Power  
n Local Regulation of Core Power  
Typical Application  
20049410  
© 2003 National Semiconductor Corporation  
DS200494  
www.national.com  
Connection Diagram  
20049411  
14-Lead Plastic TSSOP  
θJA = 155˚C/W  
NS Package Number MTC14  
EAO (Pin 8) - Output of the error amplifier. The voltage level  
Pin Description  
on this pin is compared with an internally generated ramp  
signal to determine the duty cycle. This pin is necessary for  
compensating the control loop.  
BOOT (Pin 1) - Supply rail for the N-channel MOSFET gate  
drive. The voltage should be at least one gate threshold  
above the regulator input voltage to properly turn on the  
high-side N-FET.  
SS (Pin 9) - Soft start pin. A capacitor connected between  
this pin and ground sets the speed at which the output  
voltage ramps up. Larger capacitor value results in slower  
output voltage ramp but also lower inrush current.  
LG (Pin 2) - Gate drive for the low-side N-channel MOSFET.  
This signal is interlocked with HG to avoid shoot-through  
problems.  
FB (Pin 10) - This is the inverting input of the error amplifier,  
which is used for sensing the output voltage and compen-  
sating the control loop.  
PGND (Pins 3, 13) - Ground for FET drive circuitry. It should  
be connected to system ground.  
SGND (Pin 4) - Ground for signal level circuitry. It should be  
connected to system ground.  
FREQ (Pin 11) - The switching frequency is set by connect-  
ing a resistor between this pin and ground.  
VCC (Pin 5) - Supply rail for the controller.  
SD (Pin 12) - IC Logic Shutdown. When this pin is pulled low  
the chip turns off the high side switch and turns on the low  
side switch. While this pin is low, the IC will not start up. An  
PWGD (Pin 6) - Power Good. This is an open drain output.  
The pin is pulled low when the chip is in UVP, OVP, or UVLO  
mode. During normal operation, this pin is connected to VCC  
or other voltage source through a pull-up resistor.  
internal 20µA pull-up connects this pin to VCC  
.
HG (Pin 14) - Gate drive for the high-side N-channel MOS-  
FET. This signal is interlocked with LG to avoid shoot-  
through problems.  
ISEN (Pin 7) - Current limit threshold setting. This sources a  
fixed 50µA current. A resistor of appropriate value should be  
connected between this pin and the drain of the low-side  
FET.  
www.national.com  
2
Absolute Maximum Ratings (Note 1)  
Infrared or Convection (20sec)  
ESD Rating  
235˚C  
2 kV  
If Military/Aerospace specified devices are required,  
please contact the National Semiconductor Sales Office/  
Distributors for availability and specifications.  
Operating Ratings  
VCC  
7V  
21V  
Supply Voltage (VCC  
Junction Temperature Range  
Thermal Resistance (θJA  
)
4.5V to 5.5V  
−40˚C to +125˚C  
155˚C/W  
BOOTV  
Junction Temperature  
Storage Temperature  
Soldering Information  
Lead Temperature  
(soldering, 10sec)  
150˚C  
)
−65˚C to 150˚C  
260˚C  
Electrical Characteristics  
VCC = 5V unless otherwise indicated. Typicals and limits appearing in plain type apply for TA=TJ=+25˚C. Limits appearing in  
boldface type apply over full Operating Temperature Range. Datasheet min/max specification limits are guaranteed by design,  
test, or statistical analysis.  
Symbol  
VFB_ADJ  
VON  
Parameter  
Conditions  
VCC = 4.5V, 0˚C to +125˚C  
VCC = 5V, 0˚C to +125˚C  
VCC = 5.5V, 0˚C to +125˚C  
VCC = 4.5V, −40˚C to +125˚C  
VCC = 5V, −40˚C to +125˚C  
VCC = 5.5V, −40˚C to +125˚C  
Rising  
Min  
Typ  
0.6  
0.6  
0.6  
0.6  
0.6  
0.6  
4.2  
3.6  
Max  
Units  
0.591  
0.591  
0.591  
0.589  
0.589  
0.589  
0.609  
0.609  
0.609  
0.609  
0.609  
0.609  
FB Pin Voltage  
V
UVLO Thresholds  
V
Falling  
SD = 5V, FB = 0.55V  
Fsw = 600kHz  
1
1.5  
1.7  
2
Operating VCC Current  
mA  
IQ-V5  
SD = 5V, FB = 0.65V  
Fsw = 600kHz  
0.8  
2.2  
0.7  
Shutdown VCC Current  
SD = 0V  
0.15  
0.4  
6
mA  
µs  
tPWGD1  
tPWGD2  
ISD  
PWGD Pin Response Time  
PWGD Pin Response Time  
SD Pin Internal Pull-up Current  
SS Pin Source Current  
FB Voltage Going Up  
FB Voltage Going Down  
6
µs  
20  
µA  
ISS-ON  
SS Voltage = 2.5V  
0˚C to +125˚C  
8
5
11  
11  
15  
15  
µA  
-40˚C to +125˚C  
ISS-OC  
SS Pin Sink Current During Over SS Voltage = 2.5V  
Current  
95  
µA  
µA  
ISEN Pin Source Current Trip  
Point  
0˚C to +125˚C  
35  
28  
50  
50  
65  
65  
ISEN-TH  
-40˚C to +125˚C  
ERROR AMPLIFIER  
GBW  
Error Amplifier Unity Gain  
5
MHz  
Bandwidth  
G
Error Amplifier DC Gain  
Error Amplifier Slew Rate  
FB Pin Bias Current  
60  
6
dB  
SR  
IFB  
V/µA  
FB = 0.55V  
0
0
15  
30  
2.8  
0.8  
1.2  
3.2  
100  
155  
nA  
mA  
V
FB = 0.65V  
IEAO  
VEA  
EAO Pin Current Sourcing and  
Sinking  
VEAO = 2.5, FB = 0.55V  
VEAO = 2.5, FB = 0.65V  
Minimum  
Error Amplifier Maximum Swing  
Maximum  
3
www.national.com  
Electrical Characteristics (Continued)  
VCC = 5V unless otherwise indicated. Typicals and limits appearing in plain type apply for TA=TJ=+25˚C. Limits appearing in  
boldface type apply over full Operating Temperature Range. Datasheet min/max specification limits are guaranteed by design,  
test, or statistical analysis.  
Symbol  
GATE DRIVE  
IQ-BOOT  
Parameter  
Conditions  
Min  
Typ  
Max  
Units  
BOOT Pin Quiescent Current  
BOOTV = 12V, EN = 0  
0˚C to +125˚C  
95  
95  
160  
215  
µA  
-40˚C to +125˚C  
RDS1  
RDS2  
Top FET Driver Pull-Up ON  
resistance  
@
BOOT-SW = 5V 350mA  
3
2
3
2
Top FET Driver Pull-Down ON  
resistance  
@
BOOT-SW = 5V 350mA  
RDS3  
Bottom FET Driver Pull-Up ON  
resistance  
@
BOOT-SW = 5V 350mA  
RDS4  
Bottom FET Driver Pull-Down  
ON resistance  
@
BOOT-SW = 5V 350mA  
OSCILLATOR  
RFADJ = 590kΩ  
50  
300  
600  
600  
1400  
2000  
90  
RFADJ = 88.7kΩ  
RFADJ = 42.2k, 0˚C to +125˚C  
RFADJ = 42.2k, -40˚C to +125˚C  
RFADJ = 17.4kΩ  
500  
490  
700  
700  
fOSC  
PWM Frequency  
Max Duty Cycle  
kHz  
%
RFADJ = 11.3kΩ  
D
fPWM = 300kHz  
fPWM = 600kHz  
88  
LOGIC INPUTS AND OUTPUTS  
VSD-IH  
VSD-IL  
SD Pin Logic High Trip Point  
SD Pin Logic Low Trip Point  
2.6  
1.6  
1.6  
3.5  
V
V
0˚C to +125˚C  
1.3  
1.25  
-40˚C to +125˚C  
FB Voltage Going Down  
0˚C to +125˚C  
VPWGD-TH-LO PWGD Pin Trip Points  
VPWGD-TH-HI PWGD Pin Trip Points  
0.413  
0.410  
0.430  
0.430  
0.446  
0.446  
V
-40˚C to +125˚C  
FB Voltage Going Up  
0˚C to +125˚C  
0.691  
0.688  
0.710  
0.710  
35  
0.734  
0.734  
V
-40˚C to +125˚C  
VPWGD-HYS PWGD Hysteresis (LM2737 only) FB Voltage Going Down FB Voltage  
Going Up  
mV  
110  
Note 1: Absolute maximum ratings indicate limits beyond which damage to the device may occur. Operating ratings indicate conditions for which the device  
operates correctly. Opearting Ratings do not imply guaranteed performance limits.  
Note 2: The human body model is a 100pF capacitor discharged through a 1.5k resistor into each pin.  
www.national.com  
4
Typical Performance Characteristics  
Efficiency (VO = 1.5V)  
Efficiency (VO = 3.3V)  
FSW = 300kHz, TA = 25˚C  
FSW = 300kHz, TA = 25˚C  
20049412  
20049413  
VCC Operating Current vs Temperature  
FSW = 600kHz, No-Load  
Bootpin Current vs Temperature for BOOTV = 12V  
FSW = 600kHz, Si4826DY FET, No-Load  
20049415  
20049414  
Bootpin Current vs Temperature with 5V Bootstrap  
FSW = 600kHz, Si4826DY FET, No-Load  
PWM Frequency vs Temperature  
for RFADJ = 43.2kΩ  
20049416  
20049417  
5
www.national.com  
Typical Performance Characteristics (Continued)  
RFADJ vs PWM Frequency  
RFADJ vs PWM Frequency  
(in 100 to 800kHz range), TA = 25˚C  
(in 900 to 2000kHz range), TA = 25˚C  
20049418  
20049419  
Switch Waveforms (HG Falling)  
VIN = 5V, VO = 1.8V  
IO = 3A, CSS = 10nF  
FSW = 600kHz  
VCC Operating Current Plus Boot Current vs  
PWM Frequency (Si4826DY FET, TA = 25˚C)  
20049423  
20049420  
Start-Up (No-Load)  
VIN = 10V, VO = 1.2V  
CSS = 10nF, FSW = 300kHz  
Switch Waveforms (HG Rising)  
VIN = 5V, VO = 1.8V  
IO = 3A, FSW = 600kHz  
20049424  
20049421  
www.national.com  
6
Typical Performance Characteristics (Continued)  
Start-Up (Full-Load)  
VIN = 10V, VO = 1.2V  
IO = 10A, CSS = 10nF  
FSW = 300kHz  
Start Up (No-Load, 10x CSS  
VIN = 10V, VO = 1.2V  
CSS = 100nF, FSW = 300kHz  
)
20049422  
20049426  
Start Up (Full Load, 10x CSS  
VIN = 10V, VO = 1.2V  
IO = 10A, CSS = 100nF  
FSW = 300kHz  
)
Shutdown  
VIN = 10V, VO = 1.2V  
IO = 10A, CSS = 10nF  
FSW = 300kHz  
20049425  
20049427  
Start Up (Full Load, 10x CSS  
VIN = 10V, VO = 1.2V  
IO = 10A, CSS = 100nF  
FSW = 300kHz  
)
Load Transient Response (IO = 0 to 4A)  
VIN = 12V, VO = 1.2V  
FSW = 300kHz  
20049433  
20049428  
7
www.national.com  
Typical Performance Characteristics (Continued)  
Load Transient Response (IO = 4 to 0A)  
VIN = 12V, VO = 1.2V  
Line Transient Response (VIN =5V to 12V)  
VO = 1.2V, IO = 5A  
FSW = 300kHz  
FSW = 300kHz  
20049429  
20049430  
Line Transient Response (VIN =12V to 5V)  
VO = 1.2V, IO = 5A  
Line Transient Response  
VO = 1.2V, IO = 5A  
FSW = 300kHz  
FSW = 300kHz  
20049431  
20049432  
www.national.com  
8
Block Diagram  
20049401  
Application Information  
THEORY OF OPERATION  
The LM2727 is a voltage-mode, high-speed synchronous  
buck regulator with a PWM control scheme. It is designed for  
use in set-top boxes, thin clients, DSL/Cable modems, and  
other applications that require high efficiency buck convert-  
ers. It has power good (PWRGD), output shutdown (SD),  
over voltage protection (OVP) and under voltage protection  
(UVP). The over-voltage and under-voltage signals are OR  
gated to drive the Power Good signal and a shutdown latch,  
which turns off the high side gate and turns on the low side  
gate if pulled low. Current limit is achieved by sensing the  
voltage VDS across the low side FET. During current limit the  
high side gate is turned off and the low side gate turned on.  
The soft start capacitor is discharged by a 95µA source  
(reducing the maximum duty cycle) until the current is under  
control. The LM2737 does not latch off during UVP or OVP,  
and uses the HIGH and LOW comparators for the power-  
good function only.  
An application for a microprocessor might need a delay of  
3ms, in which case CSS would be 12nF. For a different  
device, a 100ms delay might be more appropriate, in which  
case CSS would be 400nF. (390 10%) During soft start the  
PWRGD flag is forced low and is released when the voltage  
reaches a set value. At this point this chip enters normal  
operation mode, the Power Good flag is released, and the  
OVP and UVP functions begin to monitor Vo.  
NORMAL OPERATION  
While in normal operation mode, the LM2727/37 regulates  
the output voltage by controlling the duty cycle of the high  
side and low side FETs. The equation governing output  
voltage is:  
START UP  
When VCC exceeds 4.2V and the enable pin EN sees a logic  
high the soft start capacitor begins charging through an  
internal fixed 10µA source. During this time the output of the  
error amplifier is allowed to rise with the voltage of the soft  
start capacitor. This capacitor, Css, determines soft start  
time, and can be determined approximately by:  
The PWM frequency is adjustable between 50kHz and  
2MHz and is set by an external resistor, RFADJ, between the  
FREQ pin and ground. The resistance needed for a desired  
frequency is approximately:  
9
www.national.com  
until VCC rises above 4.2V. As with shutdown, the soft start  
capacitor is discharged through a FET, ensuring that the next  
start-up will be smooth.  
Application Information (Continued)  
CURRENT LIMIT  
Current limit is realized by sensing the voltage across the  
low side FET while it is on. The RDSON of the FET is a known  
value, hence the current through the FET can be determined  
as:  
MOSFET GATE DRIVERS  
The LM2727/37 has two gate drivers designed for driving  
N-channel MOSFETs in a synchronous mode. Power for the  
drivers is supplied through the BOOTV pin. For the high side  
gate (HG) to fully turn on the top FET, the BOOTV voltage  
must be at least one VGS(th) greater than Vin. (BOOTV ≥  
2*Vin) This voltage can be supplied by a separate, higher  
voltage source, or supplied from a local charge pump struc-  
ture. In a system such as a desktop computer, both 5V and  
12V are usually available. Hence if Vin was 5V, the 12V  
supply could be used for BOOTV. 12V is more than 2*Vin, so  
the HG would operate correctly. For a BOOTV of 12V, the  
initial gate charging current is 2A, and the initial gate dis-  
charging current is typically 6A.  
VDS = I * RDSON  
The current limit is determined by an external resistor, RCS  
,
connected between the switch node and the ISEN pin. A  
constant current of 50µA is forced through Rcs, causing a  
fixed voltage drop. This fixed voltage is compared against  
VDS and if the latter is higher, the current limit of the chip has  
been reached. RCS can be found by using the following:  
RCS = RDSON(LOW) * ILIM/50µA  
For example, a conservative 15A current limit in a 10A  
design with a minimum RDSON of 10mwould require a  
3.3kresistor. Because current sensing is done across the  
low side FET, no minimum high side on-time is necessary. In  
the current limit mode the LM2727/37 will turn the high side  
off and the keep low side on for as long as necessary. The  
chip also discharges the soft start capacitor through a fixed  
95µA source. In this way, smooth ramping up of the output  
voltage as with a normal soft start is ensured. The output of  
the LM2727/37 internal error amplifier is limited by the volt-  
age on the soft start capacitor. Hence, discharging the soft  
start capacitor reduces the maximum duty cycle D of the  
controller. During severe current limit, this reduction in duty  
cycle will reduce the output voltage, if the current limit con-  
ditions lasts for an extended time.  
20049402  
During the first few nanoseconds after the low side gate  
turns on, the low side FET body diode conducts. This causes  
an additional 0.7V drop in VDS. The range of VDS is normally  
much lower. For example, if RDSON were 10mand the  
current through the FET was 10A, VDS would be 0.1V. The  
current limit would see 0.7V as a 70A current and enter  
current limit immediately. Hence current limit is masked dur-  
ing the time it takes for the high side switch to turn off and the  
low side switch to turn on.  
FIGURE 1. BOOTV Supplied by Charge Pump  
In a system without a separate, higher voltage, a charge  
pump (bootstrap) can be built using a diode and small ca-  
pacitor, Figure 1. The capacitor serves to maintain enough  
voltage between the top FET gate and source to control the  
device even when the top FET is on and its source has risen  
up to the input voltage level.  
UVP/OVP  
The LM2727/37 gate drives use a BiCMOS design. Unlike  
some other bipolar control ICs, the gate drivers have rail-to-  
rail swing, ensuring no spurious turn-on due to capacitive  
coupling.  
The output undervoltage protection and overvoltage protec-  
tion mechanisms engage at 70% and 118% of the target  
output voltage, respectively. In either case, the LM2727 will  
turn off the high side switch and turn on the low side switch,  
and discharge the soft start capacitor through a MOSFET  
switch. The chip remains in this state until the shutdown pin  
has been pulled to a logic low and then released. The UVP  
function is masked only during the first charging of the soft  
start capacitor, when voltage is first applied to the VCC pin. In  
contrast, the LM2737 is designed to continue operating dur-  
ing UVP or OVP conditions, and to resume normal operation  
once the fault condition is cleared. As with the LM2727, the  
powergood flag goes low during this time, giving a logic-level  
warning signal.  
POWER GOOD SIGNAL  
The power good signal is the or-gated flag representing  
over-voltage and under-voltage protection. If the output volt-  
age is 18% over it’s nominal value, VFB = 0.7V, or falls 30%  
below that value, VFB = 0.41V, the power good flag goes low.  
The converter then turns off the high side gate, and turns on  
the low side gate. Unlike the output (LM2727 only) the power  
good flag is not latched off. It will return to a logic high  
whenever the feedback pin voltage is between 70% and  
118% of 0.6V.  
SHUT DOWN  
UVLO  
If the shutdown pin SD is pulled low, the LM2727/37 dis-  
charges the soft start capacitor through a MOSFET switch.  
The high side switch is turned off and the low side switch is  
turned on. The LM2727/37 remains in this state until SD is  
released.  
The 4.2V turn-on threshold on VCC has a built in hysteresis  
of 0.6V. Therefore, if VCC drops below 3.6V, the chip enters  
UVLO mode. UVLO consists of turning off the top FET,  
turning on the bottom FET, and remaining in that condition  
www.national.com  
10  
In the case of a desktop computer system, the input current  
slew rate is the system power supply or "silver box" output  
current slew rate, which is typically about 0.1A/µs. Total input  
capacitor ESR is 9m, hence V is 10*0.009 = 90 mV, and  
the minimum inductance required is 0.9µH. The input induc-  
tor should be rated to handle the DC input current, which is  
approximated by:  
Application Information (Continued)  
DESIGN CONSIDERATIONS  
The following is a design procedure for all the components  
needed to create the circuit shown in Figure 3 in the Ex-  
ample Circuits section, a 5V in to 1.2V out converter, capable  
of delivering 10A with an efficiency of 85%. The switching  
frequency is 300kHz. The same procedures can be followed  
to create the circuit shown in Figure 3, Figure 4, and to  
create many other designs with varying input voltages, out-  
put voltages, and output currents.  
In this case IIN-DC is about 2.8A. One possible choice is the  
TDK SLF12575T-1R2N8R2, a 1.2µH device that can handle  
8.2Arms, and has a DCR of 7m.  
INPUT CAPACITOR  
The input capacitors in a Buck switching converter are sub-  
jected to high stress due to the input current waveform,  
which is a square wave. Hence input caps are selected for  
their ripple current capability and their ability to withstand the  
heat generated as that ripple current runs through their ESR.  
Input rms ripple current is approximately:  
OUTPUT INDUCTOR  
The output inductor forms the first half of the power stage in  
a Buck converter. It is responsible for smoothing the square  
wave created by the switching action and for controlling the  
output current ripple. (Io) The inductance is chosen by  
selecting between tradeoffs in efficiency and response time.  
The smaller the output inductor, the more quickly the con-  
verter can respond to transients in the load current. As  
shown in the efficiency calculations, however, a smaller in-  
ductor requires a higher switching frequency to maintain the  
same level of output current ripple. An increase in frequency  
can mean increasing loss in the FETs due to the charging  
and discharging of the gates. Generally the switching fre-  
quency is chosen so that conduction loss outweighs switch-  
ing loss. The equation for output inductor selection is:  
The power dissipated by each input capacitor is:  
Here, n is the number of capacitors, and indicates that power  
loss in each cap decreases rapidly as the number of input  
caps increase. The worst-case ripple for a Buck converter  
occurs during full load, when the duty cycle D = 50%.  
In the 5V to 1.2V case, D = 1.2/5 = 0.24. With a 10A  
maximum load the ripple current is 4.3A. The Sanyo  
10MV5600AX aluminum electrolytic capacitor has a ripple  
current rating of 2.35A, up to 105˚C. Two such capacitors  
make a conservative design that allows for unequal current  
sharing between individual caps. Each capacitor has a maxi-  
mum ESR of 18mat 100 kHz. Power loss in each device is  
then 0.05W, and total loss is 0.1W. Other possibilities for  
input and output capacitors include MLCC, tantalum,  
OSCON, SP, and POSCAPS.  
Plugging in the values for output current ripple, input voltage,  
output voltage, switching frequency, and assuming a 40%  
peak-to-peak output current ripple yields an inductance of  
1.5µH. The output inductor must be rated to handle the peak  
current (also equal to the peak switch current), which is (Io +  
0.5*Io). This is 12A for a 10A design. The Coilcraft D05022-  
152HC is 1.5µH, is rated to 15Arms, and has a DCR of 4m.  
OUTPUT CAPACITOR  
INPUT INDUCTOR  
The output capacitor forms the second half of the power  
stage of a Buck switching converter. It is used to control the  
output voltage ripple (Vo) and to supply load current during  
fast load transients.  
The input inductor serves two basic purposes. First, in high  
power applications, the input inductor helps insulate the  
input power supply from switching noise. This is especially  
important if other switching converters draw current from the  
same supply. Noise at high frequency, such as that devel-  
oped by the LM2727 at 1MHz operation, could pass through  
the input stage of a slower converter, contaminating and  
possibly interfering with its operation.  
In this example the output current is 10A and the expected  
type of capacitor is an aluminum electrolytic, as with the  
input capacitors. (Other possibilities include ceramic, tanta-  
lum, and solid electrolyte capacitors, however the ceramic  
type often do not have the large capacitance needed to  
supply current for load transients, and tantalums tend to be  
more expensive than aluminum electrolytic.) Aluminum ca-  
pacitors tend to have very high capacitance and fairly low  
ESR, meaning that the ESR zero, which affects system  
stability, will be much lower than the switching frequency.  
The large capacitance means that at switching frequency,  
the ESR is dominant, hence the type and number of output  
capacitors is selected on the basis of ESR. One simple  
formula to find the maximum ESR based on the desired  
output voltage ripple, Vo and the designed output current  
ripple, Io, is:  
An input inductor also helps shield the LM2727 from high  
frequency noise generated by other switching converters.  
The second purpose of the input inductor is to limit the input  
current slew rate. During a change from no-load to full-load,  
the input inductor sees the highest voltage change across it,  
equal to the full load current times the input capacitor ESR.  
This value divided by the maximum allowable input current  
slew rate gives the minimum input inductance:  
11  
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Rbypass and Cbypass are standard filter components de-  
signed to ensure smooth DC voltage for the chip supply and  
for the bootstrap structure, if it is used. Use 10for the  
resistor and a 2.2µF ceramic for the cap. Cb is the bootstrap  
capacitor, and should be 0.1µF. (In the case of a separate,  
higher supply to the BOOTV pin, this 0.1µF cap can be used  
to bypass the supply.) Using a Schottky device for the boot-  
strap diode allows the minimum drop for both high and low  
side drivers. The On Semiconductor BAT54 or MBR0520  
work well.  
Application Information (Continued)  
In this example, in order to maintain a 2% peak-to-peak  
output voltage ripple and a 40% peak-to-peak inductor cur-  
rent ripple, the required maximum ESR is 6m. Three Sanyo  
10MV5600AX capacitors in parallel will give an equivalent  
ESR of 6m. The total bulk capacitance of 16.8mF is  
enough to supply even severe load transients. Using the  
same capacitors for both input and output also keeps the bill  
of materials simple.  
Rp is a standard pull-up resistor for the open-drain power  
good signal, and should be 10k. If this feature is not  
necessary, it can be omitted.  
RCS is the resistor used to set the current limit. Since the  
design calls for a peak current magnitude (Io + 0.5 * Io) of  
12A, a safe setting would be 15A. (This is well below the  
saturation current of the output inductor, which is 25A.)  
Following the equation from the Current Limit section, use a  
3.3kresistor.  
RFADJ is used to set the switching frequency of the chip.  
Following the equation in the Theory of Operation section,  
the closest 1% tolerance resistor to obtain fSW = 300kHz is  
88.7k.  
MOSFETS  
MOSFETS are a critical part of any switching controller and  
have a direct impact on the system efficiency. In this case  
the target efficiency is 85% and this is the variable that will  
determine which devices are acceptable. Loss from the ca-  
pacitors, inductors, and the LM2727 itself are detailed in the  
Efficiency section, and come to about 0.54W. To meet the  
target efficiency, this leaves 1.45W for the FET conduction  
loss, gate charging loss, and switching loss. Switching loss  
is particularly difficult to estimate because it depends on  
many factors. When the load current is more than about 1 or  
2 amps, conduction losses outweigh the switching and gate  
charging losses. This allows FET selection based on the  
RDSON of the FET. Adding the FET switching and gate-  
charging losses to the equation leaves 1.2W for conduction  
losses. The equation for conduction loss is:  
CSS depends on the users requirements. Based on the  
equation for CSS in the Theory of Operation section, for a  
3ms delay, a 12nF capacitor will suffice.  
EFFICIENCY CALCULATIONS  
A reasonable estimation of the efficiency of a switching  
controller can be obtained by adding together the loss is  
each current carrying element and using the equation:  
PCnd = D(I2 * RDSON *k) + (1-D)(I2 * RDSON *k)  
o
o
The factor k is a constant which is added to account for the  
increasing RDSON of a FET due to heating. Here, k = 1.3. The  
Si4442DY has a typical RDSON of 4.1m. When plugged into  
the equation for PCND the result is a loss of 0.533W. If this  
design were for a 5V to 2.5V circuit, an equal number of  
FETs on the high and low sides would be the best solution.  
With the duty cycle D = 0.24, it becomes apparent that the  
low side FET carries the load current 76% of the time.  
Adding a second FET in parallel to the bottom FET could  
improve the efficiency by lowering the effective RDSON. The  
lower the duty cycle, the more effective a second or even  
third FET can be. For a minimal increase in gate charging  
loss (0.054W) the decrease in conduction loss is 0.15W.  
What was an 85% design improves to 86% for the added  
cost of one SO-8 MOSFET.  
The following shows an efficiency calculation to complement  
the Circuit of Figure 3. Output power for this circuit is 1.2V x  
10A = 12W.  
Chip Operating Loss  
PIQ = IQ-V *VCC  
CC  
2mA x 5V = 0.01W  
FET Gate Charging Loss  
PGC = n * VCC * QGS * fOSC  
The value n is the total number of FETs used. The Si4442DY  
has a typical total gate charge, QGS, of 36nC and an rds-on of  
4.1m. For  
a
single FET on top and bottom:  
CONTROL LOOP COMPONENTS  
2*5*36E-9*300,000 = 0.108W  
The circuit is this design example and the others shown in  
the Example Circuits section have been compensated to  
improve their DC gain and bandwidth. The result of this  
compensation is better line and load transient responses.  
For the LM2727, the top feedback divider resistor, Rfb2, is  
also a part of the compensation. For the 10A, 5V to 1.2V  
design, the values are:  
FET Switching Loss  
PSW = 0.5 * Vin * IO * (tr + tf)* fOSC  
The Si4442DY has a typical rise time tr and fall time tf of 11  
and 47ns, respectively. 0.5*5*10*58E-9*300,000 = 0.435W  
Cc1 = 4.7pF 10%, Cc2 = 1nF 10%, Rc = 229k1%. These  
values give a phase margin of 63˚ and a bandwidth of  
29.3kHz.  
SUPPORT CAPACITORS AND RESISTORS  
The Cinx capacitors are high frequency bypass devices,  
designed to filter harmonics of the switching frequency and  
input noise. Two 1µF ceramic capacitors with a sufficient  
voltage rating (10V for the Circuit of Figure 3) will work well  
in almost any case.  
www.national.com  
12  
Input Inductor Loss  
PLin = I2 * DCRinput-L  
Application Information (Continued)  
FET Conduction Loss  
PCn = 0.533W  
in  
Input Capacitor Loss  
2.822*0.007 = 0.055W  
Output Inductor Loss  
PLout = I2 * DCRoutput-L  
102*0.004 = 0.4W  
o
System Efficiency  
4.282*0.018/2 = 0.084W  
Example Circuits  
20049403  
FIGURE 2. 5V-16V to 3.3V, 10A, 300kHz  
This circuit and the one featured on the front page have been  
designed to deliver high current and high efficiency in a small  
package, both in area and in height The tallest component in  
this circuit is the inductor L1, which is 6mm tall. The com-  
pensation has been designed to tolerate input voltages from  
5 to 16V.  
13  
www.national.com  
Example Circuits (Continued)  
20049404  
FIGURE 3. 5V to 1.2V, 10A, 300kHz  
This circuit design, detailed in the Design Considerations  
section, uses inexpensive aluminum capacitors and off-the-  
shelf inductors. It can deliver 10A at better than 85% effi-  
ciency. Large bulk capacitance on input and output ensure  
stable operation.  
20049405  
FIGURE 4. 5V to 1.8V, 3A, 600kHz  
The example circuit of Figure 4 has been designed for  
minimum component count and overall solution size. A  
switching frequency of 600kHz allows the use of small input/  
output capacitors and a small inductor. The availability of  
separate 5V and 12V supplies (such as those available from  
desk-top computer supplies) and the low current further  
reduce component count. Using the 12V supply to power the  
MOSFET drivers eliminates the bootstrap diode, D1. At low  
currents, smaller FETs or dual FETs are often the most  
efficient solutions. Here, the Si4826DY, an asymmetric dual  
FET in an SO-8 package, yields 92% efficiency at a load of  
2A.  
www.national.com  
14  
Example Circuits (Continued)  
20049406  
FIGURE 5. 3.3V to 0.8V, 5A, 500kHz  
The circuit of Figure 5 demonstrates the LM2727 delivering a  
low output voltage at high efficiency (87%) A separate 5V  
supply is required to run the chip, however the input voltage  
can be as low as 2.2  
15  
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Example Circuits (Continued)  
20049407  
FIGURE 6. 1.8V and 3.3V, 1A, 1.4MHz, Simultaneous  
The circuits in Figure 6 are intended for ADSL applications,  
where the high switching frequency keeps noise out of the  
data transmission range. In this design, the 1.8 and 3.3V  
outputs come up simultaneously by using the same softstart  
capacitor. Because two current sources now charge the  
same capacitor, the capacitance must be doubled to achieve  
the same softstart time. (Here, 40nF is used to achieve a  
5ms softstart time.) A common softstart capacitor means  
that, should one circuit enter current limit, the other circuit  
will also enter current limit. In addition, if both circuits are  
built with the LM2727, a UVP or OVP fault on one circuit will  
cause both circuits to latch off. The additional compensation  
components Rc2 and Cc3 are needed for the low ESR, all  
ceramic output capacitors, and the wide (3x) range of Vin.  
www.national.com  
16  
Example Circuits (Continued)  
20049408  
FIGURE 7. 12V Unregulated to 3.3V, 3A, 750kHz  
This circuit shows the LM27x7 paired with a cost effective  
solution to provide the 5V chip power supply, using no extra  
components other than the LM78L05 regulator itself. The  
input voltage comes from a ’brick’ power supply which does  
not regulate the 12V line tightly. Additional, inexpensive 10uF  
ceramic capacitors (Cinx and Cox) help isolate devices with  
sensitive databands, such as DSL and cable modems, from  
switching noise and harmonics.  
20049409  
FIGURE 8. 12V to 5V, 1.8A, 100kHz  
In situations where low cost is very important, the LM27x7  
can also be used as an asynchronous controller, as shown in  
the above circuit. Although a a schottky diode in place of the  
bottom FET will not be as efficient, it will cost much less than  
the FET. The 5V at low current needed to run the LM27x7  
could come from a zener diode or inexpensive regulator,  
such as the one shown in Figure 7. Because the LM27x7  
senses current in the low side MOSFET, the current limit  
feature will not function in an asynchronous design. The  
ISEN pin should be left open in this case.  
17  
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TABLE 1. Bill of Materials for Typical Application Circuit  
ID  
Part Number  
Type  
Synchronous  
Controller  
N-MOSFET  
Inductor  
Size  
Parameters  
Qty.  
Vendor  
U1  
LM2727  
TSSOP-14  
TSSOP-14  
1
NSC  
Q1, Q2  
L1  
Si4884DY  
SO-8  
7.1x7.1x3.2mm  
0805  
30V, 4.1m, 36nC  
1.5µH, 6.1A 9.6mΩ  
10µF 6.3V  
1
1
2
1
2
1
1
1
1
1
1
1
1
1
1
1
Vishay  
TDK  
RLF7030T-1R5N6R1  
C2012X5R1J106M  
C3216X7R1E105K  
6MV2200WG  
Cin1, Cin2  
Cinx  
MLCC  
TDK  
Capacitor  
AL-E  
1206  
F, 25V  
TDK  
Co1, Co2  
Cboot  
Cin  
10mm D 20mm H  
1206  
2200µF 6.3V125mΩ  
0.1µF, 25V  
Sanyo  
Vishay  
TDK  
VJ1206X104XXA  
C3216X7R1E225K  
VJ1206X123KXX  
VJ1206A2R2KXX  
VJ1206A181KXX  
CRCW1206100J  
CRCW12066342F  
CRCW12063923F  
CRCW12061002F  
CRCW12061002F  
CRCW1206222J  
Capacitor  
Capacitor  
Capacitor  
Capacitor  
Capacitor  
Resistor  
1206  
0.1µF, 25V  
Css  
1206  
12nF, 25V  
Vishay  
Vishay  
Vishay  
Vishay  
Vishay  
Vishay  
Vishay  
Vishay  
Vishay  
Cc1  
1206  
2.2pF 10%  
180pF 10%  
105%  
Cc2  
1206  
Rin  
1206  
Rfadj  
Rc1  
Resistor  
1206  
63.4k1%  
392k1%  
Resistor  
1206  
Rfb1  
Rfb2  
Rcs  
Resistor  
1206  
10k1%  
Resistor  
1206  
10k1%  
Resistor  
1206  
2.2k5%  
TABLE 2. Bill of Materials for Circuit of Figure 2  
(Identical to BOM for 1.5V except as noted below)  
ID  
L1  
Part Number  
Type  
Size  
Parameters  
Qty.  
Vendor  
RLF12560T-2R7N110 Inductor  
12.5x12.8x6mm  
2.7µH, 14.4A 4.5mΩ  
1
TDK  
Co1, Co2,  
Co3, Co4  
Cc1  
10TPB100M  
POSCAP  
7.3x4.3x2.8mm  
100µF 10V 1.9Arms  
4
Sanyo  
VJ1206A6R8KXX  
VJ1206A271KXX  
VJ1206A471KXX  
CRCW12068451F  
CRCW12061102F  
Capacitor  
Capacitor  
Capacitor  
Resistor  
1206  
1206  
1206  
1206  
1206  
6.8pF 10%  
270pF 10%  
470pF 10%  
8.45k1%  
11k1%  
1
1
1
1
1
Vishay  
Vishay  
Vishay  
Vishay  
Vishay  
Cc2  
Cc3  
Rc2  
Rfb1  
Resistor  
TABLE 3. Bill of Materials for Circuit of Figure 3  
ID  
U1  
Q1  
Part Number  
LM2727  
Type  
Synchronous  
Controller  
Size  
TSSOP-14  
SO-8  
Parameters  
Qty.  
1
Vendor  
NSC  
@
Si4442DY  
N-MOSFET  
30V, 4.1m, 4.5V,  
1
Vishay  
36nC  
@
Q2  
Si4442DY  
BAT-54  
N-MOSFET  
SO-8  
30V, 4.1m, 4.5V,  
1
Vishay  
36nC  
D1  
Lin  
L1  
Schottky Diode  
SOT-23  
30V  
1
1
1
Vishay  
Coilcraft  
Coilcraft  
SLF12575T-1R2N8R2 Inductor  
12.5x12.5x7.5mm  
22.35x16.26x8mm  
12µH, 8.2A, 6.9mΩ  
1.5µH, 15A,4mΩ  
D05022-152HC  
Inductor  
Aluminum  
Electrolytic  
Capacitor  
Aluminum  
Electrolytic  
Capacitor  
Capacitor  
Capacitor  
Cin1, Cin2  
10MV5600AX  
16mm D 25mm H  
1206  
5600µF10V 2.35Arms  
F, 25V  
2
1
2
Sanyo  
TDK  
Cinx  
Co1, Co2,  
Co3  
C3216X7R1E105K  
10MV5600AX  
16mm D 25mm H  
5600µF10V 2.35Arms  
Sanyo  
Cboot  
Cin  
VJ1206X104XXA  
C3216X7R1E225K  
VJ1206X123KXX  
1206  
1206  
1206  
0.1µF, 25V  
2.2µF, 25V  
12nF, 25V  
1
1
1
Vishay  
TDK  
Css  
Vishay  
www.national.com  
18  
TABLE 3. Bill of Materials for Circuit of Figure 3 (Continued)  
ID  
Part Number  
Type  
Capacitor  
Size  
1206  
1206  
1206  
1206  
1206  
1206  
1206  
1206  
Parameters  
4.7pF 10%  
1nF 10%  
Qty.  
1
Vendor  
Vishay  
Vishay  
Vishay  
Vishay  
Vishay  
Vishay  
Vishay  
Vishay  
Cc1  
Cc2  
Rin  
VJ1206A4R7KXX  
VJ1206A102KXX  
CRCW1206100J  
CRCW12068872F  
CRCW12062293F  
CRCW12064991F  
CRCW12064991F  
CRCW1206152J  
Capacitor  
Resistor  
Resistor  
Resistor  
Resistor  
Resistor  
Resistor  
1
105%  
1
Rfadj  
Rc1  
Rfb1  
Rfb2  
Rcs  
88.7k1%  
229k1%  
4.99k1%  
4.99k1%  
1.5k5%  
1
1
1
1
1
TABLE 4. Bill of Materials for Circuit of Figure 4  
ID  
Part Number  
Type  
Synchronous  
Controller  
Size  
Parameters  
Qty.  
Vendor  
U1  
LM2727  
TSSOP-14  
1
NSC  
Q1/Q2  
L1  
Si4826DY  
Asymetric Dual  
N-MOSFET  
Inductor  
SO-8  
30V, 24m/ 8nC  
Top 16.5m/ 15nC  
2.2µH, 6.1A, 12mΩ  
1
1
Vishay  
DO3316P-222  
12.95x9.4x  
5.21mm  
7.3x4.3x3.1mm  
7.3x4.3x3.1mm  
1206  
Coilcraft  
Cin1  
Co1  
Cc  
10TPB100ML  
4TPB220ML  
POSCAP  
POSCAP  
Capacitor  
Capacitor  
Capacitor  
Capacitor  
Capacitor  
Resistor  
Resistor  
Resistor  
Resistor  
Resistor  
Resistor  
100µF 10V 1.9Arms  
220µF 4V 1.9Arms  
F, 25V  
1
1
1
1
1
1
1
1
1
1
1
1
1
Sanyo  
Sanyo  
TDK  
C3216X7R1E105K  
C3216X7R1E225K  
VJ1206X123KXX  
VJ1206A100KXX  
VJ1206A561KXX  
CRCW1206100J  
CRCW12064222F  
CRCW12065112F  
CRCW12062491F  
CRCW12064991F  
CRCW1206272J  
Cin  
1206  
2.2µF, 25V  
12nF, 25V  
TDK  
Css  
Cc1  
Cc2  
Rin  
1206  
Vishay  
Vishay  
Vishay  
Vishay  
Vishay  
Vishay  
Vishay  
Vishay  
Vishay  
1206  
10pF 10%  
1206  
560pF 10%  
105%  
1206  
Rfadj  
Rc1  
Rfb1  
Rfb2  
Rcs  
1206  
42.2k1%  
51.1k1%  
2.49k1%  
4.99k1%  
2.7k5%  
1206  
1206  
1206  
1206  
TABLE 5. Bill of Materials for Circuit of Figure 5  
ID  
Part Number  
Type  
Synchronous  
Controller  
Size  
Parameters  
Qty.  
Vendor  
U1  
LM2727  
TSSOP-14  
1
NSC  
@
Q1  
Q2  
Si4884DY  
Si4884DY  
N-MOSFET  
SO-8  
SO-8  
30V, 13.5m, 4.5V  
1
1
Vishay  
Vishay  
15.3nC  
@
N-MOSFET  
30V, 13.5m, 4.5V  
15.3nC  
D1  
Lin  
BAT-54  
Schottky Diode  
Inductor  
SOT-23  
30V  
1
1
1
1
Vishay  
Pulse  
Pulse  
Sanyo  
P1166.102T  
P1168.102T  
10MV5600AX  
7.29x7.29 3.51mm  
12x12x4.5 mm  
16mm D 25mm H  
1µH, 11A 3.7mΩ  
1µH, 11A, 3.7mΩ  
5600µF 10V 2.35Arms  
L1  
Inductor  
Cin1  
Aluminum  
Electrolytic  
Capacitor  
Aluminum  
Electrolytic  
Capacitor  
Capacitor  
Capacitor  
Cinx  
Co1, Co2,  
Co3  
C3216X7R1E105K  
16MV4700WX  
1206  
F, 25V  
1
2
TDK  
12.5mm D 30mm  
4700µF 16V 2.8Arms  
Sanyo  
H
Cboot  
Cin  
VJ1206X104XXA  
C3216X7R1E225K  
VJ1206X123KXX  
1206  
1206  
1206  
0.1µF, 25V  
2.2µF, 25V  
12nF, 25V  
1
1
1
Vishay  
TDK  
Css  
Vishay  
19  
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TABLE 5. Bill of Materials for Circuit of Figure 5 (Continued)  
ID  
Part Number  
Type  
Capacitor  
Size  
1206  
1206  
1206  
1206  
1206  
1206  
1206  
1206  
Parameters  
4.7pF 10%  
680pF 10%  
105%  
Qty.  
1
Vendor  
Vishay  
Vishay  
Vishay  
Vishay  
Vishay  
Vishay  
Vishay  
Vishay  
Cc1  
Cc2  
Rin  
VJ1206A4R7KXX  
VJ1206A681KXX  
CRCW1206100J  
CRCW12064992F  
CRCW12061473F  
CRCW12061492F  
CRCW12064991F  
CRCW1206332J  
Capacitor  
Resistor  
Resistor  
Resistor  
Resistor  
Resistor  
Resistor  
1
1
Rfadj  
Rc1  
Rfb1  
Rfb2  
Rcs  
49.9k1%  
147k1%  
14.9k1%  
4.99k1%  
3.3k5%  
1
1
1
1
1
TABLE 6. Bill of Materials for Circuit of Figure 6  
ID  
Part Number  
Type  
Synchronous  
Controller  
Assymetric Dual  
N-MOSFET  
Schottky Diode  
Inductor  
Size  
Parameters  
Qty.  
Vendor  
U1  
LM2727  
TSSOP-14  
1
NSC  
Q1/Q2  
Si4826DY  
SO-8  
30V, 24m/ 8nC  
Top 16.5m/ 15nC  
30V  
1
Vishay  
D1  
Lin  
BAT-54  
SOT-23  
6.8x7.1x3.2mm  
6.8x7.1x3.2mm  
1812  
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
Vishay  
TDK  
RLF7030T-1R0N64  
RLF7030T-3R3M4R1  
C4532X5R1E156M  
C4532X5R1E156M  
VJ1206X104XXA  
C3216X7R1E225K  
VJ1206X393KXX  
VJ1206A220KXX  
VJ1206A681KXX  
VJ1206A681KXX  
CRCW1206100J  
CRCW12061742F  
CRCW12061072F  
CRCW120666R5F  
CRCW12064991F  
CRCW12061002F  
CRCW1206152J  
1µH, 6.4A, 7.3mΩ  
3.3µH, 4.1A, 17.4mΩ  
15µF 25V 3.3Arms  
15µF 25V 3.3Arms  
0.1µF, 25V  
L1  
Inductor  
TDK  
Cin1  
Co1  
Cboot  
Cin  
MLCC  
Sanyo  
Sanyo  
TDK  
MLCC  
1812  
Capacitor  
Capacitor  
Capacitor  
Capacitor  
Capacitor  
Capacitor  
Resistor  
1206  
1206  
2.2µF, 25V  
TDK  
Css  
Cc1  
Cc2  
Cc3  
Rin  
1206  
39nF, 25V  
Vishay  
Vishay  
Vishay  
Vishay  
Vishay  
Vishay  
Vishay  
Vishay  
Vishay  
Vishay  
Vishay  
1206  
22pF 10%  
1206  
680pF 10%  
1206  
680pF 10%  
1206  
105%  
Rfadj  
Rc1  
Rc2  
Rfb1  
Rfb2  
Rcs  
Resistor  
1206  
17.4k1%  
Resistor  
1206  
10.7k1%  
Resistor  
1206  
66.51%  
Resistor  
1206  
4.99k1%  
Resistor  
1206  
10k1%  
Resistor  
1206  
1.5k5%  
TABLE 7. Bill of Materials for 3.3V Circuit of Figure 6  
(Identical to BOM for 1.8V except as noted below)  
ID  
Part Number  
RLF7030T-4R7M3R4  
VJ1206A270KXX  
VJ1206X102KXX  
VJ1206A821KXX  
CRCW12061212F  
CRCW12054R9F  
CRCW12062211F  
CRCW12061002F  
Type  
Inductor  
Size  
6.8x7.1x 3.2mm  
1206  
Parameters  
4.7µH, 3.4A, 26mΩ  
27pF 10%  
Qty.  
1
Vendor  
TDK  
L1  
Cc1  
Cc2  
Cc3  
Rc1  
Rc2  
Rfb1  
Rfb2  
Capacitor  
Capacitor  
Capacitor  
Resistor  
Resistor  
Resistor  
Resistor  
1
Vishay  
Vishay  
Vishay  
Vishay  
Vishay  
Vishay  
Vishay  
1206  
1nF 10%  
1
1206  
820pF 10%  
12.1k1%  
54.91%  
1
1206  
1
1206  
1
1206  
2.21k1%  
10k1%  
1
1206  
1
TABLE 8. Bill of Materials for Circuit of Figure 7  
ID  
Part Number  
Type  
Synchronous  
Controller  
Size  
Parameters  
Qty.  
Vendor  
U1  
LM2727  
TSSOP-14  
1
NSC  
www.national.com  
20  
TABLE 8. Bill of Materials for Circuit of Figure 7 (Continued)  
ID  
Part Number  
Type  
Voltage  
Size  
Parameters  
Qty.  
Vendor  
U2  
LM78L05  
SO-8  
1
NSC  
Regulator  
Q1/Q2  
Si4826DY  
Assymetric Dual  
N-MOSFET  
Schottky Diode  
Inductor  
SO-8  
30V, 24m/ 8nC  
Top 16.5m/ 15nC  
30V  
1
Vishay  
D1  
Lin  
BAT-54  
SOT-23  
6.8x7.1x3.2mm  
12.5x12.5x6.5mm  
D: 10mm L:  
12.5mm  
1210  
1
1
1
1
Vishay  
TDK  
RLF7030T-1R0N64  
1µH, 6.4A, 7.3mΩ  
4.2µH, 5.5A, 15mΩ  
680µF 16V 3.4Arms  
L1  
SLF12565T-4R2N5R5 Inductor  
TDK  
Cin1  
16MV680WG  
Al-E  
Sanyo  
Cinx  
Co1 Co2  
Cox  
C3216X5R1C106M  
16MV680WG  
MLCC  
10µF 16V 3.4Arms  
15µF 25V 3.3Arms  
10µF 6.3V 2.7A  
0.1µF, 25V  
2.2µF, 25V  
12nF, 25V  
1
1
TDK  
MLCC  
1812  
Sanyo  
TDK  
C3216X5R10J06M  
VJ1206X104XXA  
C3216X7R1E225K  
VJ1206X123KXX  
VJ1206A8R2KXX  
VJ1206X102KXX  
VJ1206X472KXX  
CRCW12063252F  
CRCW12065232F  
CRCW120662371F  
CRCW12062211F  
CRCW12061002F  
CRCW1206202J  
MLCC  
1206  
Cboot  
Cin  
Capacitor  
Capacitor  
Capacitor  
Capacitor  
Capacitor  
Capacitor  
Resistor  
Resistor  
Resistor  
Resistor  
Resistor  
Resistor  
1206  
1
1
1
1
1
1
1
1
1
1
1
1
Vishay  
TDK  
1206  
Css  
1206  
Vishay  
Vishay  
Vishay  
Vishay  
Vishay  
Vishay  
Vishay  
Vishay  
Vishay  
Vishay  
Cc1  
1206  
8.2pF 10%  
1nF 10%  
Cc2  
1206  
Cc3  
1206  
4.7nF 10%  
32.5k1%  
52.3k1%  
2.371%  
Rfadj  
Rc1  
1206  
1206  
Rc2  
1206  
Rfb1  
Rfb2  
Rcs  
1206  
2.21k1%  
10k1%  
1206  
1206  
2k5%  
TABLE 9. Bill of Materials for Circuit of Figure 8  
ID  
Part Number  
Type  
Synchronous  
Controller  
Size  
Parameters  
Qty.  
Vendor  
U1  
LM2727  
TSSOP-14  
1
NSC  
Q1  
D2  
Si4894DY  
N-MOSFET  
Schottky Diode  
SO-8  
SO-8  
30V, 15m, 11.5nC  
30V, 3A  
1
1
1
1
1
1
2
Vishay  
ON  
MBRS330T3  
L1  
SLF12565T-470M2R4 Inductor  
12.5x12.8x 4.7mm  
1812  
47µH, 2.7A 53mΩ  
20V 0.5A  
TDK  
D1  
MBR0520  
16MV680WG  
Schottky Diode  
ON  
Cin1  
Cinx  
Co1, Co2  
Al-E  
1206  
680µF, 16V, 1.54Arms  
10µF, 16V, 3.4Arms  
680µF 16V 26mΩ  
Sanyo  
TDK  
C3216X5R1C106M  
16MV680WG  
MLCC  
Al-E  
1206  
D: 10mm L:  
12.5mm  
1206  
Sanyo  
Cox  
Cboot  
Cin  
C3216X5R10J06M  
VJ1206X104XXA  
C3216X7R1E225K  
VJ1206X123KXX  
VJ1206A561KXX  
VJ1206X392KXX  
VJ1206X223KXX  
CRCW12062673F  
CRCW12066192F  
CRCW12067503F  
CRCW12061371F  
CRCW12061002F  
CRCW1206122F  
MLCC  
10µF, 6.3V 2.7A  
0.1µF, 25V  
2.2µF, 25V  
12nF, 25V  
56pF 10%  
3.9nF 10%  
22nF 10%  
267k1%  
61.9k1%  
750k1%  
1.37k1%  
10k1%  
1
1
1
1
1
1
1
1
1
1
1
1
1
TDK  
Capacitor  
Capacitor  
Capacitor  
Capacitor  
Capacitor  
Capacitor  
Resistor  
Resistor  
Resistor  
Resistor  
Resistor  
Resistor  
1206  
Vishay  
TDK  
1206  
Css  
1206  
Vishay  
Vishay  
Vishay  
Vishay  
Vishay  
Vishay  
Vishay  
Vishay  
Vishay  
Vishay  
Cc1  
Cc2  
Cc3  
Rfadj  
Rc1  
Rc2  
Rfb1  
Rfb2  
Rcs  
1206  
1206  
1206  
1206  
1206  
1206  
1206  
1206  
1206  
1.2k5%  
21  
www.national.com  
Physical Dimensions inches (millimeters) unless otherwise noted  
TSSOP-14 Pin Package  
NS Package Number MTC14  
LIFE SUPPORT POLICY  
NATIONAL’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT  
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT AND GENERAL  
COUNSEL OF NATIONAL SEMICONDUCTOR CORPORATION. As used herein:  
1. Life support devices or systems are devices or  
systems which, (a) are intended for surgical implant  
into the body, or (b) support or sustain life, and  
whose failure to perform when properly used in  
accordance with instructions for use provided in the  
labeling, can be reasonably expected to result in a  
significant injury to the user.  
2. A critical component is any component of a life  
support device or system whose failure to perform  
can be reasonably expected to cause the failure of  
the life support device or system, or to affect its  
safety or effectiveness.  
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Americas Customer  
Support Center  
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Fax: +49 (0) 180-530 85 86  
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National does not assume any responsibility for use of any circuitry described, no circuit patent licenses are implied and National reserves the right at any time without notice to change said circuitry and specifications.  
配单直通车
CRCW12061072F100RT1-E3产品参数
型号:CRCW12061072F100RT1-E3
生命周期:Obsolete
包装说明:, 1206
Reach Compliance Code:unknown
ECCN代码:EAR99
HTS代码:8533.21.00.30
风险等级:5.23
其他特性:STANDARD: CECC40000/40400/40401-004,-006,-007,-802; IEC 60115-1
JESD-609代码:e3
制造商序列号:CRCW
安装特点:SURFACE MOUNT
端子数量:2
最高工作温度:155 °C
最低工作温度:-55 °C
封装形状:RECTANGULAR PACKAGE
包装方法:TR, PAPER, 7 INCH
额定功率耗散 (P):0.25 W
额定温度:70 °C
电阻:10700 Ω
电阻器类型:FIXED RESISTOR
尺寸代码:1206
表面贴装:YES
技术:METAL GLAZE/THICK FILM
温度系数:100 ppm/ °C
端子面层:MATTE TIN
端子形状:WRAPAROUND
容差:1%
工作电压:200 V
Base Number Matches:1
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