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产品型号CSD17302Q5A的概述

CSD17302Q5A 芯片概述 CSD17302Q5A 是德州仪器(Texas Instruments)公司推出的一款高性能 MOSFET(场效应晶体管)。该器件以其出色的导通电阻、快速的开关速度以及高温稳定性而受到广泛关注。CSD17302Q5A 的设计适用于各种电源管理和高频应用,特别是在开关电源、移动设备和电机驱动等领域。 MOSFET 的基本工作原理是利用电场效应来控制导电通路。CSD17302Q5A 采用增强型 N 型 MOSFET 结构,允许在较低的栅极驱动电压下实现较大的漏电流。其设计的关键在于提高效率并降低功耗,从而使其在各种应用中都能有效地管理电能。 芯片参数 CSD17302Q5A 的主要参数包括: 1. 最大漏源电压(VDS):30V 2. 最大连续漏电流(ID):51A 3. 导通电阻(RDS(on)):在4.5V 时为 4.5 mΩ 4. 门极阈值电压(VG...

产品型号CSD17302Q5A的Datasheet PDF文件预览

CSD17302Q5A  
www.ti.com  
SLPS216 FEBRUARY 2010  
30V, N-Channel NexFET™ Power MOSFETs  
Check for Samples: CSD17302Q5A  
1
FEATURES  
PRODUCT SUMMARY  
Drain to Source Voltage  
2
Optimized for 5V Gate Drive  
VDS  
Qg  
30  
5.4  
1.2  
V
Ultralow Qg and Qgd  
Gate Charge Total (4.5V)  
Gate Charge Gate to Drain  
nC  
nC  
m  
mΩ  
mΩ  
V
Low Thermal Resistance  
Avalanche Rated  
Qgd  
VGS = 3V  
9.5  
7.3  
6.4  
RDS(on) Drain to Source On Resistance  
VGS = 4.5V  
VGS = 8V  
Pb Free Terminal Plating  
RoHS Compliant  
VGS(th)  
Threshold Voltage  
1.2  
Halogen Free  
SON 5-mm × 6-mm Plastic Package  
Text and br Added for Spacing  
ORDERING INFORMATION  
APPLICATIONS  
Device  
Package  
Media  
Qty  
Ship  
Notebook Point of Load  
Point-of-Load Synchronous Buck in  
SON 5-mm × 6-mm  
Plastic Package  
13-Inch  
Reel  
Tape and  
Reel  
CSD17302Q5A  
2500  
Networking, Telecom and Computing Systems  
Text and br Added for Spacing  
ABSOLUTE MAXIMUM RATINGS  
DESCRIPTION  
TA = 25°C unless otherwise stated  
VALUE  
UNIT  
V
The NexFET™ power MOSFET has been designed  
to minimize losses in power conversion applications,  
and optimized for 5V gate drive applications.  
VDS  
VGS  
Drain to Source Voltage  
30  
Gate to Source Voltage  
+10 / –8  
87  
V
Continuous Drain Current, TC = 25°C  
Continuous Drain Current(1)  
Pulsed Drain Current, TA = 25°C(2)  
Power Dissipation(1)  
A
ID  
16  
A
Top View  
IDM  
PD  
TJ,  
104  
3
A
S
S
S
G
1
2
3
4
8
7
6
5
D
D
D
W
Operating Junction and Storage  
–55 to 150  
61  
°C  
TSTG Temperature Range  
Avalanche Energy, single pulse  
ID = 35A, L = 0.1mH, RG = 25Ω  
EAS  
mJ  
(1) Typical RqJA = 41°C/W on a 1-inch2 (6.45-cm2),  
D
2-oz. (0.071-mm thick) Cu pad on a 0.06-inch (1.52-mm) thick  
FR4 PCB.  
D
P0093-01  
(2) Pulse duration 300ms, duty cycle 2%  
RDS(on) vs VGS  
GATE CHARGE  
20  
18  
16  
14  
12  
10  
8
8
ID = 14A  
ID = 14A  
VDS = 15V  
7
6
5
4
3
2
1
0
TC = 125°C  
6
TC = 25°C  
4
2
0
0
1
2
3
4
5
6
7
8
9
10  
0
1
2
3
4
5
6
7
8
9
10  
VGS - Gate-to-Source Voltage - V  
Qg - Gate Charge - nC  
G006  
G003  
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas  
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
2
NexFET is a trademark of Texas Instruments.  
PRODUCTION DATA information is current as of publication date.  
Products conform to specifications per the terms of the Texas  
Instruments standard warranty. Production processing does not  
necessarily include testing of all parameters.  
Copyright © 2010, Texas Instruments Incorporated  
CSD17302Q5A  
SLPS216 FEBRUARY 2010  
www.ti.com  
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam  
during storage or handling to prevent electrostatic damage to the MOS gates.  
ELECTRICAL CHARACTERISTICS  
(TA = 25°C unless otherwise stated)  
PARAMETER  
Static Characteristics  
TEST CONDITIONS  
MIN  
TYP  
MAX UNIT  
BVDSS  
IDSS  
Drain to Source Voltage  
VGS = 0V, ID = 250mA  
30  
V
Drain to Source Leakage Current  
Gate to Source Leakage Current  
Gate to Source Threshold Voltage  
VGS = 0V, VDS = 24V  
VDS = 0V, VGS = +10 / –8V  
VDS = VGS, ID = 250mA  
VGS = 3V, ID = 14A  
1
100  
1.7  
mA  
nA  
V
IGSS  
VGS(th)  
0.9  
1.2  
9.5  
7.3  
6.4  
68  
12..8  
9
mΩ  
mΩ  
mΩ  
S
RDS(on)  
Drain to Source On Resistance  
Transconductance  
VGS = 4.5V, ID = 14A  
VGS = 8V, ID = 14A  
7.9  
gfs  
VDS = 15V, ID = 14A  
Dynamic Characteristics  
Ciss  
Coss  
Crss  
RG  
Input Capacitance  
730  
390  
35  
950  
510  
45  
pF  
pF  
pF  
Output Capacitance  
Reverse Transfer Capacitance  
Series Gate Resistance  
Gate Charge Total (4.5V)  
Gate Charge Gate to Drain  
Gate Charge Gate to Source  
Gate Charge at Vth  
Output Charge  
VGS = 0V, VDS = 15V, f = 1MHz  
0.8  
5.4  
1.2  
1.7  
0.9  
9.5  
5.2  
8.4  
10.6  
3.1  
1.6  
7
Qg  
nC  
nC  
nC  
nC  
nC  
ns  
ns  
ns  
ns  
Qgd  
Qgs  
Qg(th)  
Qoss  
td(on)  
tr  
VDS = 15V, ID = 14A  
VDS = 13V, VGS = 0V  
Turn On Delay Time  
Rise Time  
VDS = 15V, VGS = 4.5V,  
IDS = 14A, RG = 2Ω  
td(off)  
tf  
Turn Off Delay Time  
Fall Time  
Diode Characteristics  
VSD  
Qrr  
trr  
Diode Forward Voltage  
ISD = 14A, VGS = 0V  
0.85  
15.4  
17.5  
1
V
Reverse Recovery Charge  
Reverse Recovery Time  
nC  
ns  
VDD= 13V, IF = 14A,  
di/dt = 300A/ms  
THERMAL CHARACTERISTICS  
(TA = 25°C unless otherwise stated)  
PARAMETER  
Thermal Resistance Junction to Case(1)  
Thermal Resistance Junction to Ambient(1)(2)  
MIN  
TYP  
MAX  
UNIT  
°C/W  
°C/W  
RqJC  
RqJA  
1.8  
51  
(1)  
R
qJC is determined with the device mounted on a 1-inch2 (6.45-cm2), 2-oz. (0.071-mm thick) Cu pad on a 1.5-inch × 1.5-inch (3.81-cm ×  
3.81-cm), 0.06-inch (1.52-mm) thick FR4 PCB. RqJC is specified by design, whereas RqJA is determined by the user’s board design.  
(2) Device mounted on FR4 material with 1-inch2 (6.45-cm2), 2-oz. (0.071-mm thick) Cu.  
2
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Copyright © 2010, Texas Instruments Incorporated  
Product Folder Link(s): CSD17302Q5A  
CSD17302Q5A  
www.ti.com  
SLPS216 FEBRUARY 2010  
GATE  
Source  
GATE  
Source  
Max RqJA = 51°C/W  
when mounted on  
1 inch2 (6.45 cm2) of  
2-oz. (0.071-mm thick)  
Cu.  
Max RqJA = 125°C/W  
when mounted on a  
minimum pad area of  
2-oz. (0.071-mm thick)  
Cu.  
DRAIN  
DRAIN  
M0137-02  
M0137-01  
TYPICAL MOSFET CHARACTERISTICS  
(TA = 25°C unless otherwise stated)  
10  
1
0.5  
0.3  
Duty Cycle = t1/t2  
0.1  
0.1  
0.05  
P
0.02  
0.01  
t1  
0.01  
t2  
Single Pulse  
Typical RqJA = 100°C/W (min Cu)  
TJ = P ´ ZqJA ´ RqJA  
0.001  
0.001  
0.01  
0.1  
1
10  
100  
1k  
tp - Pulse Duration - s  
G012  
Figure 1. Transient Thermal Impedance  
Copyright © 2010, Texas Instruments Incorporated  
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SLPS216 FEBRUARY 2010  
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TYPICAL MOSFET CHARACTERISTICS (continued)  
(TA = 25°C unless otherwise stated)  
TEXT ADDED FOR SPACING  
TEXT ADDED FOR SPACING  
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
50  
45  
40  
35  
30  
25  
20  
15  
10  
5
VDS = 5V  
VGS = 8V  
TC = 125°C  
VGS = 4.5V  
TC = 25°C  
VGS = 3.5V  
VGS = 3V  
TC = -55°C  
VGS = 2.5V  
0
0
0
0.2  
0.4  
0.6  
0.8  
1
1.2  
1.4  
1.6  
1
0
0
1.5  
2
2.5  
3
VDS - Drain-to-Source Voltage - V  
VGS - Gate-to-Source Voltage - V  
G001  
G002  
Figure 2. Saturation Characteristics  
TEXT ADDED FOR SPACING  
Figure 3. Transfer Characteristics  
TEXT ADDED FOR SPACING  
8
7
6
5
4
3
2
1
0
1.8  
1.6  
1.4  
1.2  
1
ID = 14A  
VDS = 15V  
f = 1MHz  
VGS = 0V  
Coss = Cds + Cgd  
Ciss = Cgd + Cgs  
0.8  
0.6  
0.4  
0.2  
0
Crss = Cgd  
0
1
2
3
4
5
6
7
8
9
10  
5
10  
15  
20  
25  
30  
Qg - Gate Charge - nC  
VDS - Drain-to-Source Voltage - V  
G003  
G004  
Figure 4. Gate Charge  
Figure 5. Capacitance  
TEXT ADDED FOR SPACING  
TEXT ADDED FOR SPACING  
20  
18  
16  
14  
12  
10  
8
1.6  
1.4  
1.2  
1
ID = 14A  
ID = 250µA  
TC = 125°C  
0.8  
0.6  
0.4  
0.2  
0
6
TC = 25°C  
4
2
0
-75  
-25  
25  
75  
125  
175  
1
2
3
4
5
6
7
8
9
10  
TC - Case Temperature - °C  
VGS - Gate-to-Source Voltage - V  
G005  
G006  
Figure 6. Threshold Voltage vs. Temperature  
Figure 7. On-State Resistance vs. Gate-to-Source Voltage  
4
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Product Folder Link(s): CSD17302Q5A  
CSD17302Q5A  
www.ti.com  
SLPS216 FEBRUARY 2010  
TYPICAL MOSFET CHARACTERISTICS (continued)  
(TA = 25°C unless otherwise stated)  
TEXT ADDED FOR SPACING  
TEXT ADDED FOR SPACING  
1.6  
1.4  
1.2  
1
100  
10  
ID = 14A  
VGS = 4.5V  
1
TC = 125°C  
0.1  
0.8  
0.6  
0.4  
0.2  
TC = 25°C  
0.01  
0.001  
0.0001  
-75  
-25  
25  
75  
125  
175  
0
0.2  
0.4  
0.6  
0.8  
1
1.2  
TC - Case Temperature - °C  
VSD - Source-to-Drain Voltage - V  
G007  
G008  
Figure 8. Normalized On-State Resistance vs. Temperature  
Figure 9. Typical Diode Forward Voltage  
TEXT ADDED FOR SPACING  
TEXT ADDED FOR SPACING  
1k  
1k  
100  
10  
100  
10  
1ms  
10ms  
TC = 25°C  
1
0.1  
10101m10s  
Area Limited  
by RDS(on)  
1s  
Single Pulse  
Typical RθJA = 100°C/W (min Cu)  
TC = 125°C  
DC  
0.01  
1
0.01  
0.1  
1
10  
100  
0.01  
0.1  
1
10  
100  
VDS - Drain-to-Source Voltage - V  
t(AV) - Time in Avalanche - ms  
G009  
G010  
Figure 10. Maximum Safe Operating Area  
Figure 11. Single Pulse Unclamped Inductive Switching  
TEXT ADDED FOR SPACING  
120  
100  
80  
60  
40  
20  
0
-50  
-25  
0
25  
50  
75  
100 125 150 175  
TC - Case Temperature - °C  
G011  
Figure 12. Maximum Drain Current vs. Temperature  
Copyright © 2010, Texas Instruments Incorporated  
Submit Documentation Feedback  
5
Product Folder Link(s): CSD17302Q5A  
CSD17302Q5A  
SLPS216 FEBRUARY 2010  
www.ti.com  
MECHANICAL DATA  
Q5A Package Dimensions  
E2  
L
H
K
q
L1  
Top View  
Side View  
Bottom View  
q
E1  
E
Front View  
M0135-01  
MILLIMETERS  
NOM  
DIM  
MIN  
0.90  
0.33  
0.20  
4.80  
3.61  
5.90  
5.70  
3.38  
MAX  
1.10  
0.51  
0.30  
5.00  
3.96  
6.10  
5.80  
3.78  
A
b
1.00  
0.41  
c
0.25  
D1  
D2  
E
4.90  
3.81  
6.00  
E1  
E2  
e
5.75  
3.58  
1.27 BSC  
0.51  
H
0.41  
1.10  
0.51  
0.06  
0°  
0.61  
K
L
0.61  
0.13  
0.71  
0.20  
12°  
L1  
q
6
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Copyright © 2010, Texas Instruments Incorporated  
Product Folder Link(s): CSD17302Q5A  
CSD17302Q5A  
www.ti.com  
SLPS216 FEBRUARY 2010  
MILLIMETERS  
INCHES  
DIM  
Recommended PCB Pattern  
MIN  
MAX  
6.305  
4.56  
4.56  
0.7  
MIN  
MAX  
0.248  
0.18  
F1  
F1  
F2  
6.205  
4.46  
4.46  
0.65  
0.62  
0.63  
0.7  
0.244  
0.176  
0.176  
0.026  
0.024  
0.025  
0.028  
0.026  
0.024  
0.193  
0.176  
F7  
F6  
F3  
0.18  
F4  
0.028  
0.026  
0.027  
0.031  
0.028  
0.026  
0.197  
0.18  
F5  
0.67  
0.68  
0.8  
F6  
F7  
F8  
0.65  
0.62  
4.9  
0.7  
F9  
0.67  
5
F10  
F11  
4.46  
4.56  
F10  
M0139-01  
For recommended circuit layout for PCB designs, see application note SLPA005 Reducing Ringing Through  
PCB Layout Techniques.  
Q5A Tape and Reel Information  
K0  
4.00 0.10 ꢀ(SS ꢁNoS 1ꢂ  
0.30 0.05  
2.00 0.05  
+0.10  
–0.00  
Ø 1.50  
B0  
A0  
8.00 0.10  
R 0.30 MAX  
Ø 1.50 MIꢁ  
R 0.30 TYP  
A0 = 6.50 0.10  
B0 = 5.30 0.10  
K0 = 1.40 0.10  
M0138-01  
Notes:  
1. 10-sprocket hole-pitch cumulative tolerance ±0.2  
2. Camber not to exceed 1mm in 100mm, noncumulative over 250mm  
3. Material: black static-dissipative polystyrene  
4. All dimensions are in mm (unless otherwise specified)  
5. A0 and B0 measured on a plane 0.3mm above the bottom of the pocket  
6. MSL1 260°C (IR and convection) PbF reflow compatible  
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Package Marking Information  
Location  
1st Line  
8
5
5
8
CSD  
= Fixed Characters  
NNNNN = Product Code  
2nd Line (Date Code)  
CSDNNNNN  
YYWWC  
LLLLL  
YY  
WW  
C
= Last 2 digits of the Year  
= 2-digit Work Week  
= Country of Origin  
> Philippines = P  
> Taiwan = T  
> China = C  
3rd Line  
LLLLL  
= Last 5 digits of the Wafer Lot #  
1
4
4
1
Pin 1  
Identifier  
M0136-01  
8
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配单直通车
CSD17302Q5A产品参数
型号:CSD17302Q5A
Brand Name:Texas Instruments
是否无铅: 不含铅
是否Rohs认证: 符合
生命周期:Active
IHS 制造商:TEXAS INSTRUMENTS INC
包装说明:6 X 5 MM, ROHS COMPLIANT, PLASTIC, SON-8
针数:8
Reach Compliance Code:not_compliant
ECCN代码:EAR99
HTS代码:8541.29.00.95
Factory Lead Time:12 weeks
风险等级:1.68
Is Samacsys:N
其他特性:AVALANCHE RATED
雪崩能效等级(Eas):61 mJ
外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:30 V
最大漏极电流 (Abs) (ID):87 A
最大漏极电流 (ID):87 A
最大漏源导通电阻:0.0128 Ω
FET 技术:METAL-OXIDE SEMICONDUCTOR
最大反馈电容 (Crss):45 pF
JESD-30 代码:R-PDSO-N8
JESD-609代码:e3
湿度敏感等级:1
元件数量:1
端子数量:5
工作模式:ENHANCEMENT MODE
最高工作温度:150 °C
最低工作温度:-55 °C
封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, THIN PROFILE
峰值回流温度(摄氏度):260
极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):3 W
最大脉冲漏极电流 (IDM):104 A
认证状态:Not Qualified
子类别:FET General Purpose Power
表面贴装:YES
端子面层:Matte Tin (Sn)
端子形式:NO LEAD
端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING
晶体管元件材料:SILICON
Base Number Matches:1
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