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产品型号CY7C1061BV33-10ZXCT的Datasheet PDF文件预览

CY7C1061BV33  
16-Mbit (1M x 16) Static RAM  
Low Enable (BLE) is LOW, then data from I/O pins (I/O0  
through I/O7), is written into the location specified on the  
address pins (A0 through A19). If Byte High Enable (BHE) is  
LOW, then data from I/O pins (I/O8 through I/O15) is written into  
the location specified on the address pins (A0 through A19).  
Features  
• High speed  
— tAA = 10 ns  
• Low active power  
Reading from the device is accomplished by enabling the chip  
by taking CE LOW while forcing the Output Enable (OE) LOW  
and the Write Enable (WE) HIGH. If Byte Low Enable (BLE) is  
LOW, then data from the memory location specified by the  
address pins will appear on I/O0 to I/O7. If Byte High Enable  
(BHE) is LOW, then data from memory will appear on I/O8 to  
I/O15. See the truth table at the back of this data sheet for a  
complete description of Read and Write modes.  
— 990 mW (max.)  
• Operating voltages of 3.3 ± 0.3V  
• 2.0V data retention  
• Automatic power-down when deselected  
• TTL-compatible inputs and outputs  
• Available in Pb-free and non Pb-free 54-pin TSOP II  
package  
The input/output pins (I/O0 through I/O15) are placed in a  
high-impedance state when the device is deselected (CE  
HIGH), the outputs are disabled (OE HIGH), the BHE and BLE  
are disabled (BHE, BLE HIGH), or during a Write operation  
(CE LOW and WE LOW).  
Functional Description  
The CY7C1061BV33 is a high-performance CMOS Static  
RAM organized as 1,048,576 words by 16 bits.  
The CY7C1061BV33 is available in a 54-pin TSOP II package  
with center power and ground (revolutionary) pinout.  
Writing to the device is accomplished by enabling the chip (CE  
LOW) while forcing the Write Enable (WE) input LOW. If Byte  
Logic Block Diagram  
Pin Configurations[1, 2]  
54-pin TSOP II (Top View)  
I/O  
V
I/O  
I/O  
1
54  
53  
I/O  
V
11  
12  
CC  
INPUT BUFFER  
2
3
4
5
6
SS  
I/O  
52  
51  
50  
13  
14  
10  
A
0
I/O  
V
9
A
1
V
SS  
A
CC  
2
I/O  
49 I/O  
A
15  
8
3
I/O –I/O  
1M x 16  
ARRAY  
0
7
A
48  
47  
A
5
A
A
A
A
A
BHE  
4
7
4
3
A
5
A
8
6
I/O –I/O  
8
15  
A
6
46  
45  
44  
43  
42  
41  
40  
39  
38  
37  
36  
35  
34  
33  
32  
31  
30  
29  
A
7
9
2
A
7
A
10  
11  
12  
8
A
9
1
0
A
8
A
9
NC  
CE 13  
OE  
V
V
COLUMN  
DECODER  
CC  
SS  
14  
15  
16  
17  
18  
19  
20  
21  
22  
DNU/V  
BLE  
WE  
CC  
SS  
DNU/V  
A
19  
A
10  
A
18  
A
11  
BHE  
WE  
A
A
A
A
13  
17  
16  
15  
12  
A
A
14  
CE  
I/O  
V
I/O  
V
OE  
BLE  
0
7
23  
24  
25  
26  
27  
CC  
SS  
I/O  
I/O  
6
5
1
2
I/O  
I/O  
V
V
CC  
SS  
I/O  
28 I/O  
3
4
Notes:  
1. DNU/V Pin (#16) has to be left floating or connected to V and DNU/V Pin (#40) has to be left floating or connected to V to ensure proper application.  
CC  
CC  
SS  
SS  
2. NC – No Connect Pins are not connected to the die  
Cypress Semiconductor Corporation  
Document #: 38-05693 Rev. *B  
198 Champion Court  
San Jose, CA 95134-1709  
408-943-2600  
Revised August 3, 2006  
CY7C1061BV33  
Selection Guide  
–10  
10  
–12  
12  
Unit  
ns  
Maximum Access Time  
Maximum Operating Current  
Commercial  
275  
275  
50  
260  
260  
50  
mA  
Industrial  
Maximum CMOS Standby Current  
Commercial/Industrial  
mA  
DC Input Voltage[3] ................................ –0.5V to VCC + 0.5V  
Current into Outputs (LOW)......................................... 20 mA  
Maximum Ratings  
(Above which the useful life may be impaired. For user guide-  
lines, not tested.)  
Operating Range  
Storage Temperature .................................65°C to +150°C  
Range  
Commercial  
Industrial  
Ambient Temperature  
0°C to +70°C  
VCC  
Ambient Temperature with  
Power Applied.............................................55°C to +125°C  
3.3V ± 0.3V  
–40°C to +85°C  
Supply Voltage on VCC to Relative GND[3]–0.5V to +4.6VDC  
Voltage Applied to Outputs  
in High-Z State[3] ....................................–0.5V to VCC + 0.5V  
DC Electrical Characteristics Over the Operating Range  
–10  
–12  
Parameter  
VOH  
VOL  
Description  
Output HIGH Voltage  
Output LOW Voltage  
Input HIGH Voltage  
Input LOW Voltage[3]  
Input Leakage Current  
Test Conditions  
Min.  
Max.  
Min.  
Max.  
Unit  
V
VCC = Min., IOH = –4.0 mA  
VCC = Min., IOL = 8.0 mA  
2.4  
2.4  
0.4  
0.4  
VCC + 0.3  
0.8  
V
VIH  
2.0  
–0.3  
–1  
VCC + 0.3  
0.8  
2.0  
–0.3  
–1  
V
VIL  
V
IIX  
GND < VI < VCC  
+1  
+1  
µA  
µA  
mA  
mA  
mA  
IOZ  
Output Leakage Current GND < VOUT < VCC, Output Disabled  
–1  
+1  
–1  
+1  
ICC  
VCC Operating  
Supply Current  
VCC = Max.,  
f = fMAX = 1/tRC  
Commercial  
Industrial  
275  
275  
70  
260  
260  
ISB1  
Automatic CE  
Max. VCC, CE > VIH  
70  
Power-down Current  
—TTL Inputs  
VIN > VIH or VIN < VIL, f = fMAX  
ISB2  
Automatic CE  
Power-down Current  
—CMOS Inputs  
Max. VCC  
CE > VCC – 0.3V,  
IN > VCC – 0.3V,  
or VIN < 0.3V, f = 0  
,
Commercial/  
Industrial  
50  
50  
mA  
V
Capacitance[4]  
Parameter  
Description  
Input Capacitance  
I/O Capacitance  
Test Conditions  
Max.  
Unit  
CIN  
TA = 25°C, f = 1 MHz, VCC = 3.3V  
6
8
pF  
pF  
COUT  
Thermal Resistance[4]  
Parameter  
Description  
Test Conditions  
54-pin TSOP-II  
49.95  
Unit  
°C/W  
°C/W  
ΘJA  
ΘJC  
Thermal Resistance (Junction to Ambient) Test conditions follow standard test  
methods and procedures for  
measuring thermal impedance, per  
EIA/JESD51.  
Thermal Resistance (Junction to Case)  
3.34  
Notes:  
3. V (min.) = –2.0V and V (max) = V + 0.5V for pulse durations of less than 20 ns.  
IL  
IH  
CC  
4. Tested initially and after any design or process changes that may affect these parameters.  
Document #: 38-05693 Rev. *B  
Page 2 of 9  
CY7C1061BV33  
AC Test Loads and Waveforms[5]  
50  
R1 317  
3.3V  
= 1.5V  
OUTPUT  
VTH  
OUTPUT  
Z = 50Ω  
30 pF*  
0
* Capacitive Load consists of all com-  
ponents of the test environment.  
R2  
351Ω  
5 pF*  
INCLUDING  
JIG AND  
SCOPE  
(a)  
(b)  
ALL INPUT PULSES  
3.3V  
GND  
90%  
10%  
90%  
10%  
Fall time: > 1V/ns  
Rise time > 1V/ns  
(c)  
AC Switching Characteristics Over the Operating Range[6]  
–10  
–12  
Parameter  
Read Cycle  
tpower  
tRC  
Description  
Min.  
Max.  
Min.  
Max.  
Unit  
VCC(typical) to the first access[7]  
Read Cycle Time  
1
1
ms  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
10  
12  
tAA  
Address to Data Valid  
Data Hold from Address Change  
CE LOW to Data Valid  
OE LOW to Data Valid  
OE LOW to Low-Z  
OE HIGH to High-Z[8]  
CE LOW to Low-Z[8]  
CE HIGH to High-Z[8]  
CE LOW to Power-Up[9]  
CE HIGH to Power-Down[9]  
Byte Enable to Data Valid  
Byte Enable to Low-Z  
Byte Disable to High-Z  
10  
12  
tOHA  
tACE  
tDOE  
tLZOE  
tHZOE  
tLZCE  
tHZCE  
tPU  
3
3
10  
5
12  
6
1
3
0
1
3
0
5
5
6
6
tPD  
10  
5
12  
6
tDBE  
tLZBE  
1
1
tHZBE  
5
6
Notes:  
5. Valid SRAM operation does not occur until the power supplies have reached the minimum operating V (3.0V). As soon as 1ms (T  
) after reaching the  
power  
DD  
minimum operating V , normal SRAM operation can begin including reduction in V to the data retention (V , 2.0V) voltage.  
DD  
DD  
CCDR  
6. Test conditions assume signal transition time of 3 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V, and output loading of the specified  
I
/I and specified transmission line loads. Test conditions for the Read cycle use output loading shown in part a) of the AC test loads, unless specified otherwise.  
OL OH  
7. This part has a voltage regulator which steps down the voltage from 3V to 2V internally. t  
started.  
time has to be provided initially before a Read/Write operation is  
power  
8. t  
, t  
,t  
, t  
andt  
, t  
, t  
, t  
arespecifiedwithaloadcapacitanceof5pFasin(b)ofACTestLoads. Transitionismeasured ±200mVfromsteady-state  
HZOE HZCE HZWE HZBE  
LZOE LZCE \LZWE LZBE  
voltage.  
9. These parameters are guaranteed by design and are not tested.  
10. The internal Write time of the memory is defined by the overlap of CE LOW and WE LOW. Chip enables must be active and WE and byte enables must be LOW to  
initiate a Write, and the transition of any of these signals can terminate the Write. The input data set-up and hold timing should be referenced to the leading edge  
of the signal that terminates the Write.  
11. The minimum Write cycle time for Write Cycle No. 3 (WE controlled, OE LOW) is the sum of t  
and t  
.
HZWE  
SD  
Document #: 38-05693 Rev. *B  
Page 3 of 9  
CY7C1061BV33  
AC Switching Characteristics Over the Operating Range[6] (continued)  
–10  
–12  
Parameter  
Description  
Min.  
Max.  
Min.  
Max.  
Unit  
Write Cycle[10, 11]  
tWC  
tSCE  
tAW  
Write Cycle Time  
10  
7
12  
8
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
CE LOW to Write End  
Address Set-up to Write End  
Address Set-up to Write Start  
WE Pulse Width  
7
7
tSA  
0
0
tPWE  
tSD  
7
8
Data Set-up to Write End  
Data Hold from Write End  
WE HIGH to Low-Z[8]  
5.5  
0
6
tHD  
0
tLZWE  
tHZWE  
tBW  
3
3
WE LOW to High-Z[8]  
5
6
Byte Enable to End of Write  
Address Hold from Write End  
7
0
8
0
tHA  
Data Retention Waveform  
DATA RETENTION MODE  
3.0V  
3.0V  
V
DR  
> 2V  
V
CC  
t
t
R
CDR  
CE  
Switching Waveforms  
Read Cycle No. 1[12, 13]  
t
RC  
ADDRESS  
t
AA  
t
OHA  
DATA OUT  
PREVIOUS DATA VALID  
DATA VALID  
Notes:  
12. Device is continuously selected. OE, CE, BHE and/or BHE = V .  
IL  
13. WE is HIGH for Read cycle.  
Document #: 38-05693 Rev. *B  
Page 4 of 9  
CY7C1061BV33  
Switching Waveforms (continued)  
Read Cycle No. 2 (OE Controlled)[13, 14]  
ADDRESS  
CE  
t
RC  
t
ACE  
OE  
t
HZOE  
t
DOE  
BHE, BLE  
t
LZOE  
t
HZCE  
t
DBE  
t
LZBE  
t
HZBE  
HIGH  
IMPEDANCE  
HIGH IMPEDANCE  
DATA OUT  
VCC  
SUPPLY  
CURRENT  
DATA VALID  
t
LZCE  
t
PD  
I
CC
t
PU  
50%  
50%  
ISB  
Write Cycle No. 1 (CE Controlled)[15, 16]  
t
WC  
ADDRESS  
t
SA  
t
SCE  
CE  
t
AW  
t
HA  
t
PWE  
WE  
t
BW  
BHE, BLE  
t
t
SD  
HD  
DATAI/O  
Notes:  
14. Address valid prior to or coincident with CE transition LOW.  
15. Data I/O is high-impedance if OE or BHE and/or BLE = V  
.
IH  
16. If CE goes HIGH simultaneously with WE going HIGH, the output remains in a high-impedance state.  
Document #: 38-05693 Rev. *B  
Page 5 of 9  
CY7C1061BV33  
Switching Waveforms (continued)  
Write Cycle No. 2 (BLE or BHE Controlled)  
t
WC  
ADDRESS  
t
SA  
t
BW  
BHE, BLE  
t
AW  
t
HA  
t
PWE  
WE  
CE  
t
SCE  
t
t
HD  
SD  
DATAI/O  
Write Cycle No. 3 (WE Controlled, OE LOW)[15, 16]  
t
WC  
ADDRESS  
CE  
t
SCE  
t
AW  
t
HA  
t
SA  
t
PWE  
WE  
t
BW  
BHE, BLE  
t
HZWE  
t
t
SD  
HD  
DATA I/O  
t
LZWE  
Document #: 38-05693 Rev. *B  
Page 6 of 9  
CY7C1061BV33  
Truth Table  
CE  
H
L
OE  
X
L
WE  
X
BLE  
X
BHE  
X
I/O0–I/O7  
High-Z  
I/O8–I/O15  
High-Z  
Mode  
Power  
Power-down  
Read All Bits  
Standby (ISB)  
H
H
H
L
L
L
Data Out  
Data Out  
High-Z  
Data Out  
High-Z  
Active (ICC  
Active (ICC  
Active (ICC  
Active (ICC  
Active (ICC  
Active (ICC  
Active (ICC  
)
)
)
)
)
)
)
L
L
L
H
L
Read Lower Bits Only  
Read Upper Bits Only  
Write All Bits  
L
L
H
L
Data Out  
Data In  
High-Z  
L
X
X
X
H
L
Data In  
Data In  
High-Z  
L
L
L
H
L
Write Lower Bits Only  
Write Upper Bits Only  
Selected, Outputs Disabled  
L
L
H
X
Data In  
High-Z  
L
H
X
High-Z  
Ordering Information  
Speed  
Package  
(ns)  
Ordering Code  
CY7C1061BV33-10ZC  
Name  
Package Type  
Operating Range  
Commercial  
Industrial  
10  
51-85160  
54-pin TSOP II  
CY7C1061BV33-10ZI  
CY7C1061BV33-10ZXC  
CY7C1061BV33-10ZXI  
CY7C1061BV33-12ZC  
CY7C1061BV33-12ZI  
CY7C1061BV33-12ZXC  
CY7C1061BV33-12ZXI  
54-pin TSOP II (Pb-free)  
54-pin TSOP II  
Commercial  
Industrial  
12  
Commercial  
Industrial  
54-pin TSOP II (Pb-free)  
Commercial  
Industrial  
Document #: 38-05693 Rev. *B  
Page 7 of 9  
CY7C1061BV33  
Package Diagram  
54-pin TSOP II (51-85160)  
51-85160-**  
All products and company names mentioned in this document may be the trademarks of their respective holders.  
Document #: 38-05693 Rev. *B  
Page 8 of 9  
CY7C1061BV33  
Document History Page  
Document Title: CY7C1061BV33 16-Mbit (1M x 16) Static RAM  
Document Number: 38-05693  
Orig. of  
REV.  
**  
ECN NO. Issue Date Change  
Description of Change  
283950  
309453  
492137  
See ECN  
See ECN  
See ECN  
RKF  
RKF  
NXR  
New data sheet  
*A  
Final data sheet  
*B  
Removed 8 ns speed bin  
Changed the description of IIX from Input Load Current to Input Leakage  
Current in DC Electrical Characteristics table  
Updated the Ordering Information Table  
Document #: 38-05693 Rev. *B  
Page 9 of 9  
配单直通车
CY7C1061BV33-10ZXCT产品参数
型号:CY7C1061BV33-10ZXCT
生命周期:Obsolete
零件包装代码:TSOP2
包装说明:TSOP2,
针数:54
Reach Compliance Code:unknown
ECCN代码:3A991.B.2.A
HTS代码:8542.32.00.41
风险等级:5.55
最长访问时间:10 ns
JESD-30 代码:R-PDSO-G54
长度:22.415 mm
内存密度:16777216 bit
内存集成电路类型:STANDARD SRAM
内存宽度:16
功能数量:1
端子数量:54
字数:1048576 words
字数代码:1000000
工作模式:ASYNCHRONOUS
最高工作温度:70 °C
最低工作温度:
组织:1MX16
封装主体材料:PLASTIC/EPOXY
封装代码:TSOP2
封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, THIN PROFILE
并行/串行:PARALLEL
认证状态:Not Qualified
座面最大高度:1.2 mm
最大供电电压 (Vsup):3.6 V
最小供电电压 (Vsup):3 V
标称供电电压 (Vsup):3.3 V
表面贴装:YES
技术:CMOS
温度等级:COMMERCIAL
端子形式:GULL WING
端子节距:0.8 mm
端子位置:DUAL
宽度:10.16 mm
Base Number Matches:1
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