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  • 北京元坤伟业科技有限公司

         该会员已使用本站17年以上

  • B360AE-13-F
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  • 深圳市芯脉实业有限公司

     该会员已使用本站11年以上
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  • 深圳市得捷芯城科技有限公司

     该会员已使用本站11年以上
  • B360AE-13-F
  • 数量309890 
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  • 集好芯城

     该会员已使用本站13年以上
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  • 深圳市得捷芯城科技有限公司

     该会员已使用本站11年以上
  • B360AE-13-F
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  • 昂富(深圳)电子科技有限公司

     该会员已使用本站4年以上
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     该会员已使用本站11年以上
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  • ▉▉¥0.8元一有问必回一有长期订货一备货HK仓库
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  • 毅创腾(集团)有限公司

     该会员已使用本站16年以上
  • B360AE-13-F
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     该会员已使用本站15年以上
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  • 深圳市西源信息科技有限公司

     该会员已使用本站9年以上
  • B360AE-13-F
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  • 深圳市芯脉实业有限公司

     该会员已使用本站11年以上
  • B360AE-13-F
  • 数量3362 
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     该会员已使用本站10年以上
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  • 深圳市芯脉实业有限公司

     该会员已使用本站11年以上
  • B360AE-13-F
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产品型号B360AE-13-F的概述

芯片B360AE-13-F的概述 B360AE-13-F是一款高性能的集成电路芯片,广泛应用于各种电子设备中。作为市场上一种受欢迎的产品,B360AE-13-F因其优秀的性能、稳定的质量以及较为广泛的适用性而受到众多工程师和设计人员的青睐。此芯片主要用于控制和信号处理领域,是一款非常典型的通用型芯片,可以较为简便地集成于不同的电子系统中。 B360AE-13-F芯片的设计理念,不仅注重性能,还考虑了成本问题,因此在市场上能够以较为合理的价格获取。同时,芯片的功耗设计得相对较为合理,有助于延长设备的使用寿命和电池的续航时间。 芯片B360AE-13-F的详细参数 B360AE-13-F芯片的详细参数包括但不限于以下几个方面: 1. 工作电压范围:该芯片的工作电压范围通常在3V到5V之间,这样的设计使其能够适用于多种工作环境。 2. 工作温度范围:B360AE-13-F能够在-40...

产品型号B360AF-13的Datasheet PDF文件预览

B350AF-B360AF  
Green  
3.0A SCHOTTKY BARRIER RECTIFIER  
Product Summary  
Features and Benefits  
B350AF/B360AF  
Reduced Low Forward Voltage Drop (VF); Better Efficiency and  
Cooler Operation  
VF(MAX) (V)  
@ +25°C  
0.65  
IR(MAX) (mA)  
@ +25°C  
0.2  
VRRM (V)  
IO (A)  
Reduced High-temperature Reverse Leakage; Increased  
Reliability against Thermal Runaway Failure in High  
Temperature Operation.  
50  
60  
3
3
0.65  
0.2  
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)  
Halogen and Antimony Free. “Green” Device (Note 3)  
Mechanical Data  
Description and Applications  
Case: SMAF  
The Schottky rectifier providing low VF and excellent reverse leakage  
stability at high temperatures, this device is ideal for use in general  
rectification applications such as:  
Case Material: Molded Plastic, “Green” Molding Compound. UL  
Flammability Classification Rating 94V-0  
Moisture Sensitivity: Level 1 per J-STD-020  
Terminals: Finish - Matte Tin Annealed over Copper Leadframe.  
Solderable per MIL-STD-202, Method 208  
Polarity: Cathode Band  
Boost Diode  
Blocking Diode  
Recirculating Diode  
Weight: 0.036 grams (Approximate)  
SMAF  
Top View  
Ordering Information (Note 4)  
Part Number  
B350AF-13  
B360AF-13  
Case  
SMAF  
SMAF  
Packaging  
10,000/Tape & Reel  
10,000/Tape & Reel  
Notes:  
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.  
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"  
and Lead-free.  
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and  
<1000ppm antimony compounds.  
4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/.  
Marking Information  
B3XXAF = Product Type Marking Code (ex: B350AF)  
= Manufacturers’ Code Marking  
YWW = Date Code Marking  
Y = Last Digit of Year (ex: 7 for 2017)  
WW = Week Code (01 to 53)  
YWW  
B3XXAF  
1 of 5  
www.diodes.com  
May 2017  
© Diodes Incorporated  
B350AF-B360AF  
Document number: DS39246 Rev. 2 - 2  
B350AF-B360AF  
Maximum Ratings (@TA = +25°C, unless otherwise specified.)  
Single phase, half wave, 60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
Characteristic  
Symbol  
B350AF  
B360AF  
Unit  
VRRM  
VRWM  
VRM  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
50  
60  
V
Average Rectified Output Current  
3
A
A
IO  
Non-Repetitive Peak Forward Surge Current 8.3ms  
Single Half Sine-Wave Superimposed on Rated Load  
80  
IFSM  
Thermal Characteristics  
Characteristic  
Symbol  
RθJA  
Value  
90  
Unit  
°C/W  
°C/W  
°C  
Typical Thermal Resistance Junction to Ambient (Note 5)  
Typical Thermal Resistance Junction to Case (Note 5)  
50  
RθJC  
Operating and Storage Temperature Range  
-55 to +150  
TJ, TSTG  
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)  
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
Test Condition  
0.55  
0.52  
0.65  
IF = 3A, TJ = +25°C  
Forward Voltage Drop  
V
VF  
IF = 3A, TJ = +125°C  
VR = 50V, TJ = +25°C  
VR = 60V, TJ = +25°C  
VR = 60V, TJ = +125°C  
B350AF  
0.02  
0.03  
24  
0.2  
0.2  
Leakage Current (Note 6) B360AF  
mA  
pF  
IR  
Typical Capacitance  
110  
CT  
VR = 4.0V, f = 1MHz  
Notes:  
5. Device mounted on FR-4 substrate, 0.4"*0.5", 2oz, single-sided, PC boards with 0.2"*0.25" copper pad.  
6. Short duration pulse test used to minimize self-heating effect.  
2 of 5  
www.diodes.com  
May 2017  
© Diodes Incorporated  
B350AF-B360AF  
Document number: DS39246 Rev. 2 - 2  
B350AF-B360AF  
10  
1
100  
10  
150  
150℃  
1
85℃  
125℃  
100℃  
125℃  
100℃  
0.1  
0.1  
0.01  
85℃  
25℃  
0.01  
0.001  
25℃  
-55℃  
0.0  
0.1  
0.2  
0.3  
0.4  
0.5  
0.6  
0.7  
0.8  
0
10  
20  
VR, REVERSE VOLTAGE (V)  
Figure 2. Typical Reverse Characteristics  
30  
40  
50  
60  
VF,INSTANTANEOUS FORWARD VOLTAGE (V)  
Figure 1. Typical Forward Characteristics  
3.5  
3
10000  
1000  
100  
f=1MHz  
2.5  
2
Note 5  
1.5  
1
0.5  
0
10  
0
10  
20  
VR, REVERSE VOLTAGE (V)  
Figure 3. Typical Junction Capacitance  
30  
40  
50  
60  
25  
50  
75  
100  
125  
150  
TA, AMBIENT TEMPERATURE ()  
Figure 4. DC Forward Current Derating  
3 of 5  
www.diodes.com  
May 2017  
© Diodes Incorporated  
B350AF-B360AF  
Document number: DS39246 Rev. 2 - 2  
B350AF-B360AF  
Package Outline Dimensions  
Please see http://www.diodes.com/package-outlines.html for the latest version.  
SMAF  
E
H
L
E
SMAF  
Min  
Dim  
A
b
c
D
E
HE  
L
Max  
1.10  
1.65  
0.40  
2.95  
4.60  
5.60  
1.50  
b
0.90  
1.25  
0.10  
2.25  
3.95  
4.80  
0.50  
D
A
c
All Dimensions in mm  
Suggested Pad Layout  
Please see http://www.diodes.com/package-outlines.html for the latest version.  
SMAF  
X1  
G
X
Dimensions Value (in mm)  
C
G
4.00  
1.50  
2.50  
6.50  
1.70  
Y
X
X1  
Y
C
4 of 5  
www.diodes.com  
May 2017  
© Diodes Incorporated  
B350AF-B360AF  
Document number: DS39246 Rev. 2 - 2  
B350AF-B360AF  
IMPORTANT NOTICE  
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,  
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE  
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).  
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes  
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the  
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or  
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume  
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated  
website, harmless against all damages.  
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.  
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and  
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or  
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.  
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings  
noted herein may also be covered by one or more United States, international or foreign trademarks.  
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the  
final and determinative format released by Diodes Incorporated.  
LIFE SUPPORT  
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express  
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:  
A. Life support devices or systems are devices or systems which:  
1. are intended to implant into the body, or  
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the  
labeling can be reasonably expected to result in significant injury to the user.  
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the  
failure of the life support device or to affect its safety or effectiveness.  
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and  
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any  
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related  
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its  
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.  
Copyright © 2017, Diodes Incorporated  
www.diodes.com  
5 of 5  
www.diodes.com  
May 2017  
© Diodes Incorporated  
B350AF-B360AF  
Document number: DS39246 Rev. 2 - 2  
配单直通车
B360AF-13产品参数
型号:B360AF-13
是否Rohs认证: 符合
生命周期:Active
IHS 制造商:DIODES INC
包装说明:SMAF, 2 PIN
Reach Compliance Code:not_compliant
Factory Lead Time:19 weeks
风险等级:1.59
应用:EFFICIENCY
配置:SINGLE
二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.65 V
JESD-30 代码:R-PDSO-F2
JESD-609代码:e3
最大非重复峰值正向电流:80 A
元件数量:1
相数:1
端子数量:2
最高工作温度:150 °C
最低工作温度:-55 °C
最大输出电流:3 A
封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR
封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260
最大重复峰值反向电压:60 V
最大反向电流:200 µA
表面贴装:YES
技术:SCHOTTKY
端子面层:Matte Tin (Sn)
端子形式:FLAT
端子位置:DUAL
处于峰值回流温度下的最长时间:30
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