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产品型号BN1A4Z的Datasheet PDF文件预览

DATA SHEET  
COMPOUND TRANSISTOR  
BN1A4Z  
on-chip resistor PNP silicon epitaxial transistor  
For mid-speed switching  
FEATURES  
PACKAGE DRAWING (UNIT: mm)  
On-chip bias resistor  
(R1 = 10 k)  
Complementary transistor with BA1A3Q  
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)  
Parameter  
Symbol  
VCBO  
VCEO  
VEBO  
IC(DC)  
IC(pulse) *  
PT  
Ratings  
60  
Unit  
V
Collector to base voltage  
Collector to emitter voltage  
Emitter to base voltage  
Collector current (DC)  
Collector current (Pulse)  
Total power dissipation  
Junction temperature  
Storage temperature  
50  
V
5  
V
100  
200  
250  
mA  
mA  
mW  
°C  
°C  
Tj  
150  
55 to +150  
Tstg  
* PW 10 ms, duty cycle 50 %  
ELECTRICAL CHARACTERISTICS (Ta = 25°C)  
Parameter  
Collector cutoff current  
DC current gain  
Symbol  
ICBO  
Conditions  
VCB = 50 V, IE = 0  
MIN.  
TYP.  
MAX.  
100  
Unit  
nA  
VCE = 5.0 V, IC = 5.0 mA  
VCE = 5.0 V, IC = 50 mA  
IC = 5.0 mA, IB = 0.25 mA  
VCE = 5.0 V, IC = 100 µA  
VCE = 0.2 V, IC = 5.0 mA  
hFE1 **  
hFE2 **  
VCE(sat) **  
VIL **  
VIH **  
R1  
135  
100  
190  
170  
600  
DC current gain  
0.07  
0.57  
0.9  
10  
0.2  
0.5  
Collector saturation voltage  
Low level input voltage  
High level input voltage  
Input resistance  
V
V
2.0  
V
kΩ  
µs  
µs  
µs  
7.0  
13.0  
0.2  
5.0  
6.0  
VCC = 5.0 V, RL = 1.0 kΩ  
VI = 5.0 V, PW = 2.0 µs  
duty cycle2 %  
Turn-on time  
ton  
Storage time  
tstg  
Turn-off time  
toff  
** Pulse test PW 350 µs, duty cycle 2 %  
hFE CLASSIFICATION  
Marking  
hFE1  
Q
P
K
135 to 270  
200 to 400  
300 to 600  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all devices/types available in every country. Please check with local NEC representative for  
availability and additional information.  
Document No. D13584EJ1V0DS00 (1st edition)  
Date Published April 2002 N CP(K)  
Printed in Japan  
2002  
©
BN1A4Z  
TYPICAL CHARACTERISTICS (Ta = 25°C)  
2
Data Sheet D13584EJ1V0DS  
BN1A4Z  
3
Data Sheet D13584EJ1V0DS  
BN1A4Z  
The information in this document is current as of July, 2001. The information is subject to change  
without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data  
books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products  
and/or types are available in every country. Please check with an NEC sales representative for  
availability and additional information.  
No part of this document may be copied or reproduced in any form or by any means without prior  
written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document.  
NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of  
third parties by or arising from the use of NEC semiconductor products listed in this document or any other  
liability arising from the use of such products. No license, express, implied or otherwise, is granted under any  
patents, copyrights or other intellectual property rights of NEC or others.  
Descriptions of circuits, software and other related information in this document are provided for illustrative  
purposes in semiconductor product operation and application examples. The incorporation of these  
circuits, software and information in the design of customer's equipment shall be done under the full  
responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third  
parties arising from the use of these circuits, software and information.  
While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers  
agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize  
risks of damage to property or injury (including death) to persons arising from defects in NEC  
semiconductor products, customers must incorporate sufficient safety measures in their design, such as  
redundancy, fire-containment, and anti-failure features.  
NEC semiconductor products are classified into the following three quality grades:  
"Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products  
developed based on a customer-designated "quality assurance program" for a specific application. The  
recommended applications of a semiconductor product depend on its quality grade, as indicated below.  
Customers must check the quality grade of each semiconductor product before using it in a particular  
application.  
"Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio  
and visual equipment, home electronic appliances, machine tools, personal electronic equipment  
and industrial robots  
"Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster  
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed  
for life support)  
"Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life  
support systems and medical equipment for life support, etc.  
The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's  
data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not  
intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness  
to support a given application.  
(Note)  
(1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries.  
(2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for  
NEC (as defined above).  
M8E 00. 4  
配单直通车
BN1A4Z产品参数
型号:BN1A4Z
生命周期:Obsolete
IHS 制造商:RENESAS ELECTRONICS CORP
包装说明:IN-LINE, R-PSIP-T3
Reach Compliance Code:unknown
ECCN代码:EAR99
HTS代码:8541.21.00.95
风险等级:5.84
最大集电极电流 (IC):0.1 A
集电极-发射极最大电压:50 V
配置:SINGLE WITH BUILT-IN RESISTOR
最小直流电流增益 (hFE):100
JESD-30 代码:R-PSIP-T3
元件数量:1
端子数量:3
封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR
封装形式:IN-LINE
极性/信道类型:PNP
认证状态:Not Qualified
表面贴装:NO
端子形式:THROUGH-HOLE
端子位置:SINGLE
晶体管应用:SWITCHING
晶体管元件材料:SILICON
最大关闭时间(toff):6000 ns
最大开启时间(吨):200 ns
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