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  • 深圳市嘉胜威科技有限公司

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  • 现代芯城(深圳)科技有限公司

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  • 数量18126 
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  • 数量40048 
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  • 深圳市勤思达科技有限公司

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  • 数量10878 
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  • 深圳市欧立现代科技有限公司

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  • 深圳市羿芯诚电子有限公司

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  • 北京首天国际有限公司

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  • 数量9184 
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  • 深圳市华斯顿电子科技有限公司

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  • 数量5000 
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  • 数量26700 
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  • 数量15000 
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  • 深圳市欧昇科技有限公司

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  • BAV70TT1G
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  • BAV70TT1G
  • 数量6500 
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产品型号BAV70TT/R的Datasheet PDF文件预览

BAV70 series  
High-speed switching diodes  
Rev. 07 — 27 November 2007  
Product data sheet  
1. Product profile  
1.1 General description  
High-speed switching diodes, encapsulated in small Surface-Mounted Device (SMD)  
plastic packages.  
Table 1.  
Product overview  
Type number Package  
NXP  
Package  
configuration  
Configuration  
JEITA  
-
JEDEC  
BAV70  
SOT23  
TO-236AB small  
dual common cathode  
dual common cathode  
BAV70M  
SOT883  
SC-101  
-
leadless ultra  
small  
BAV70S  
SOT363  
SC-88  
-
very small  
quadruple common  
cathode/common cathode  
BAV70T  
BAV70W  
SOT416  
SOT323  
SC-75  
SC-70  
-
-
ultra small  
very small  
dual common cathode  
dual common cathode  
1.2 Features  
I High switching speed: trr 4 ns  
I Low leakage current  
I Low capacitance: Cd 1.5 pF  
I Reverse voltage: VR 100 V  
I Small SMD plastic packages  
1.3 Applications  
I High-speed switching  
I General-purpose switching  
1.4 Quick reference data  
Table 2.  
Symbol  
Per diode  
IR  
Quick reference data  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
reverse current  
VR = 80 V  
-
-
-
-
-
-
0.5  
100  
4
µA  
V
VR  
reverse voltage  
[1]  
trr  
reverse recovery time  
ns  
[1] When switched from IF = 10 mA to IR = 10 mA; RL = 100 ; measured at IR = 1 mA.  
 
 
 
 
 
 
 
 
BAV70 series  
NXP Semiconductors  
High-speed switching diodes  
2. Pinning information  
Table 3.  
Pin  
Pinning  
Description  
Simplified outline  
Symbol  
BAV70; BAV70T; BAV70W  
1
2
3
anode (diode 1)  
anode (diode 2)  
common cathode  
3
3
1
2
006aab034  
1
2
006aaa144  
BAV70M  
1
2
3
anode (diode 1)  
anode (diode 2)  
common cathode  
3
1
2
3
1
2
006aab034  
Transparent  
top view  
BAV70S  
1
2
3
anode (diode 1)  
anode (diode 2)  
6
1
5
2
4
3
6
5
2
4
common cathode (diode 3  
and diode 4)  
4
5
6
anode (diode 3)  
anode (diode 4)  
1
3
006aab104  
common cathode (diode 1  
and diode 2)  
3. Ordering information  
Table 4.  
Ordering information  
Type number  
Package  
Name  
-
Description  
plastic surface-mounted package; 3 leads  
Version  
SOT23  
BAV70  
BAV70M  
SC-101  
leadless ultra small plastic package; 3 solder lands;  
SOT883  
body 1.0 × 0.6 × 0.5 mm  
BAV70S  
BAV70T  
BAV70W  
SC-88  
SC-75  
SC-70  
plastic surface-mounted package; 6 leads  
plastic surface-mounted package; 3 leads  
plastic surface-mounted package; 3 leads  
SOT363  
SOT416  
SOT323  
BAV70_SER_7  
© NXP B.V. 2007. All rights reserved.  
Product data sheet  
Rev. 07 — 27 November 2007  
2 of 15  
 
 
BAV70 series  
NXP Semiconductors  
High-speed switching diodes  
4. Marking  
Table 5.  
Marking codes  
Type number  
BAV70  
Marking code[1]  
A4*  
S4  
BAV70M  
BAV70S  
BAV70T  
A4*  
A4  
BAV70W  
A4*  
[1] * = -: made in Hong Kong  
* = p: made in Hong Kong  
* = t: made in Malaysia  
* = W: made in China  
5. Limiting values  
Table 6.  
Limiting values  
In accordance with the Absolute Maximum Rating System (IEC 60134).  
Symbol  
Per diode  
VRRM  
Parameter  
Conditions  
Min  
Max  
Unit  
repetitive peak reverse  
voltage  
-
-
100  
100  
V
V
VR  
IF  
reverse voltage  
forward current  
BAV70  
T
amb 25 °C  
-
-
-
-
-
215  
150  
250  
150  
175  
mA  
mA  
mA  
mA  
mA  
BAV70M  
Ts = 90 °C  
Ts = 60 °C  
Ts = 90 °C  
BAV70S  
BAV70T  
BAV70W  
Tamb 25 °C  
IFRM  
repetitive peak forward  
current  
BAV70  
-
-
-
-
-
450  
500  
450  
500  
500  
mA  
mA  
mA  
mA  
mA  
BAV70M  
BAV70S  
BAV70T  
BAV70W  
[1]  
IFSM  
non-repetitive peak forward square wave  
current  
tp = 1 µs  
-
-
-
4
A
A
A
tp = 1 ms  
tp = 1 s  
1
0.5  
BAV70_SER_7  
© NXP B.V. 2007. All rights reserved.  
Product data sheet  
Rev. 07 — 27 November 2007  
3 of 15  
 
 
 
 
BAV70 series  
NXP Semiconductors  
High-speed switching diodes  
Table 6.  
Limiting values …continued  
In accordance with the Absolute Maximum Rating System (IEC 60134).  
Symbol  
Parameter  
total power dissipation  
BAV70  
Conditions  
Min  
Max  
Unit  
[2]  
[3]  
Ptot  
T
amb 25 °C  
amb 25 °C  
-
-
-
-
-
250  
250  
350  
170  
200  
mW  
mW  
mW  
mW  
mW  
BAV70M  
T
BAV70S  
Ts = 60 °C  
Ts = 90 °C  
BAV70T  
BAV70W  
T
amb 25 °C  
Per device  
IF  
forward current  
BAV70  
T
amb 25 °C  
-
125  
75  
mA  
mA  
mA  
mA  
mA  
°C  
BAV70M  
Ts = 90 °C  
Ts = 60 °C  
Ts = 90 °C  
-
BAV70S  
-
100  
75  
BAV70T  
-
BAV70W  
T
amb 25 °C  
-
100  
150  
+150  
+150  
Tj  
junction temperature  
ambient temperature  
storage temperature  
-
Tamb  
Tstg  
65  
65  
°C  
°C  
[1] Tj = 25 °C prior to surge.  
[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard  
footprint.  
[3] Reflow soldering is the only recommended soldering method.  
6. Thermal characteristics  
Table 7.  
Thermal characteristics  
Symbol  
Per diode  
Rth(j-a)  
Parameter  
Conditions  
Min  
Typ  
Max Unit  
[1]  
[2]  
thermal resistance from  
junction to ambient  
in free air  
BAV70  
-
-
-
-
-
-
500  
500  
625  
K/W  
K/W  
K/W  
BAV70M  
BAV70W  
Rth(j-t)  
thermal resistance from  
junction to tie-point  
BAV70  
-
-
-
-
360  
300  
K/W  
K/W  
BAV70W  
Rth(j-sp)  
thermal resistance from  
junction to solder point  
BAV70S  
BAV70T  
-
-
-
-
255  
350  
K/W  
K/W  
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.  
[2] Reflow soldering is the only recommended soldering method.  
BAV70_SER_7  
© NXP B.V. 2007. All rights reserved.  
Product data sheet  
Rev. 07 — 27 November 2007  
4 of 15  
 
 
 
 
 
BAV70 series  
NXP Semiconductors  
High-speed switching diodes  
7. Characteristics  
Table 8.  
Characteristics  
Tamb = 25 °C unless otherwise specified.  
Symbol  
Per diode  
VF  
Parameter  
Conditions  
Min  
Typ  
Max Unit  
[1]  
forward voltage  
IF = 1 mA  
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
715  
855  
1
mV  
mV  
V
IF = 10 mA  
IF = 50 mA  
IF = 150 mA  
1.25  
30  
V
IR  
reverse current  
VR = 25 V  
nA  
µA  
µA  
µA  
pF  
ns  
V
VR = 80 V  
0.5  
30  
VR = 25 V; Tj = 150 °C  
VR = 80 V; Tj = 150 °C  
VR = 0 V; f = 1 MHz  
100  
1.5  
4
Cd  
trr  
diode capacitance  
[2]  
[3]  
reverse recovery time  
forward recovery voltage  
VFR  
1.75  
[1] Pulse test: tp 300 µs; δ ≤ 0.02.  
[2] When switched from IF = 10 mA to IR = 10 mA; RL = 100 ; measured at IR = 1 mA.  
[3] When switched from IF = 10 mA; tr = 20 ns.  
BAV70_SER_7  
© NXP B.V. 2007. All rights reserved.  
Product data sheet  
Rev. 07 — 27 November 2007  
5 of 15  
 
 
 
 
 
BAV70 series  
NXP Semiconductors  
High-speed switching diodes  
mbg704  
006aab107  
2
3
10  
10  
I
F
I
FSM  
(A)  
(mA)  
2
10  
10  
10  
1
(1)  
(2) (3)  
(4)  
1
1  
1  
10  
10  
2
3
4
1
10  
10  
10  
10  
0.2  
0.6  
1.0  
1.4  
t
(µs)  
V
(V)  
p
F
(1) Tamb = 150 °C  
(2) Tamb = 85 °C  
(3) Tamb = 25 °C  
(4) Tamb = 40 °C  
Based on square wave currents.  
Tj = 25 °C; prior to surge  
Fig 1. Forward current as a function of forward  
voltage; typical values  
Fig 2. Non-repetitive peak forward current as a  
function of pulse duration; maximum values  
mbg446  
006aab108  
2
10  
0.8  
I
R
(1)  
(2)  
C
(pF  
d
(µA)  
10  
)
0.6  
1
1  
10  
10  
10  
10  
10  
0.4  
(3)  
(4)  
2  
3  
4  
5  
0.2  
0
0
4
8
12  
16  
0
20  
40  
60  
80  
100  
V
(V)  
R
V
(V)  
R
(1) Tamb = 150 °C  
(2) Tamb = 85 °C  
(3) Tamb = 25 °C  
(4) Tamb = 40 °C  
f = 1 MHz; Tamb = 25 °C  
Fig 3. Reverse current as a function of reverse  
voltage; typical values  
Fig 4. Diode capacitance as a function of reverse  
voltage; typical values  
BAV70_SER_7  
© NXP B.V. 2007. All rights reserved.  
Product data sheet  
Rev. 07 — 27 November 2007  
6 of 15  
BAV70 series  
NXP Semiconductors  
High-speed switching diodes  
8. Test information  
t
t
p
r
t
D.U.T.  
10 %  
I
+ I  
F
t
F
rr  
R
S
= 50  
SAMPLING  
OSCILLOSCOPE  
t
R
i
= 50 Ω  
V = V + I × R  
S
R
F
(1)  
90 %  
V
R
mga881  
input signal  
output signal  
(1) IR = 1 mA  
Input signal: reverse pulse rise time tr = 0.6 ns; reverse voltage pulse duration tp = 100 ns; duty cycle δ = 0.05  
Oscilloscope: rise time tr = 0.35 ns  
Fig 5. Reverse recovery time test circuit and waveforms  
I
1 kΩ  
450 Ω  
I
V
90 %  
R
S
= 50 Ω  
OSCILLOSCOPE  
= 50 Ω  
V
FR  
D.U.T.  
R
i
10 %  
t
t
t
t
p
r
input signal  
output signal  
mga882  
Input signal: forward pulse rise time tr = 20 ns; forward current pulse duration tp 100 ns; duty cycle δ ≤ 0.005  
Fig 6. Forward recovery voltage test circuit and waveforms  
BAV70_SER_7  
© NXP B.V. 2007. All rights reserved.  
Product data sheet  
Rev. 07 — 27 November 2007  
7 of 15  
 
BAV70 series  
NXP Semiconductors  
High-speed switching diodes  
9. Package outline  
0.62  
0.55  
0.55  
0.47  
3.0  
2.8  
1.1  
0.9  
0.50  
0.46  
3
3
0.30  
0.22  
0.45  
0.15  
2.5 1.4  
2.1 1.2  
1.02  
0.95  
0.65  
0.30  
0.22  
2
1
1
2
0.48  
0.38  
0.15  
0.09  
0.20  
0.12  
1.9  
0.35  
Dimensions in mm  
04-11-04  
Dimensions in mm  
03-04-03  
Fig 7. Package outline BAV70 (SOT23/TO-236AB)  
Fig 8. Package outline BAV70M (SOT883/SC-101)  
2.2  
1.8  
1.1  
0.8  
1.8  
1.4  
0.95  
0.60  
0.45  
0.15  
6
5
4
3
0.45  
0.15  
2.2 1.35  
2.0 1.15  
1.75 0.9  
1.45 0.7  
pin 1  
index  
1
2
3
1
2
0.25  
0.10  
0.3  
0.2  
0.30  
0.15  
0.25  
0.10  
0.65  
1.3  
1
Dimensions in mm  
06-03-16  
Dimensions in mm  
04-11-04  
Fig 9. Package outline BAV70S (SOT363/SC-88)  
Fig 10. Package outline BAV70T (SOT416/SC-75)  
2.2  
1.8  
1.1  
0.8  
0.45  
0.15  
3
2.2 1.35  
2.0 1.15  
1
2
0.4  
0.3  
0.25  
0.10  
1.3  
Dimensions in mm  
04-11-04  
Fig 11. Package outline BAV70W (SOT323/SC-70)  
BAV70_SER_7  
© NXP B.V. 2007. All rights reserved.  
Product data sheet  
Rev. 07 — 27 November 2007  
8 of 15  
 
BAV70 series  
NXP Semiconductors  
High-speed switching diodes  
10. Packing information  
Table 9.  
Packing methods  
The indicated -xxx are the last three digits of the 12NC ordering code.[1]  
Type number Package  
Description  
Packing quantity  
3000  
-215  
-
10000  
-235  
-315  
-135  
-165  
-135  
-135  
BAV70  
SOT23  
4 mm pitch, 8 mm tape and reel  
2 mm pitch, 8 mm tape and reel  
4 mm pitch, 8 mm tape and reel; T1  
4 mm pitch, 8 mm tape and reel; T2  
4 mm pitch, 8 mm tape and reel  
4 mm pitch, 8 mm tape and reel  
BAV70M  
BAV70S  
SOT883  
SOT363  
[2]  
[3]  
-115  
-125  
-115  
-115  
BAV70T  
BAV70W  
SOT416  
SOT323  
[1] For further information and the availability of packing methods, see Section 14.  
[2] T1: normal taping  
[3] T2: reverse taping  
11. Soldering  
2.90  
2.50  
2
1
0.85  
0.85  
solder lands  
solder resist  
3.00  
1.30  
2.70  
solder paste  
3
occupied area  
Dimensions in mm  
0.60  
(3x)  
0.50 (3x)  
0.60 (3x)  
1.00  
3.30  
sot023  
Fig 12. Reflow soldering footprint BAV70 (SOT23/TO-236AB)  
BAV70_SER_7  
© NXP B.V. 2007. All rights reserved.  
Product data sheet  
Rev. 07 — 27 November 2007  
9 of 15  
 
 
 
 
 
BAV70 series  
NXP Semiconductors  
High-speed switching diodes  
3.40  
1.20 (2x)  
solder lands  
solder resist  
occupied area  
2
1
4.60 4.00 1.20  
3
Dimensions in mm  
preferred transport direction during soldering  
sot023  
2.80  
4.50  
Fig 13. Wave soldering footprint BAV70 (SOT23/TO-236AB)  
1.30  
R = 0.05 (12×)  
0.30  
R = 0.05 (12×)  
0.35  
(2×)  
0.90 0.20  
0.60 0.70 0.80  
0.25  
(2×)  
0.30  
(2×)  
0.40  
(2×)  
0.50  
(2×)  
0.30  
0.40  
0.50  
solder lands  
solder paste  
solder resist  
occupied area  
Dimensions in mm  
Reflow soldering is the only recommended soldering method.  
Fig 14. Reflow soldering footprint BAV70M (SOT883/SC-101)  
BAV70_SER_7  
© NXP B.V. 2007. All rights reserved.  
Product data sheet  
Rev. 07 — 27 November 2007  
10 of 15  
BAV70 series  
NXP Semiconductors  
High-speed switching diodes  
2.65  
0.60  
(2×)  
0.40  
2.35  
0.90 2.10  
(2×)  
solder lands  
solder paste  
0.50  
(4×)  
solder resist  
0.50  
(4×)  
occupied area  
Dimensions in mm  
1.20  
2.40  
sot363  
Fig 15. Reflow soldering footprint BAV70S (SOT363/SC-88)  
5.25  
0.30 1.00 4.00  
4.50  
solder lands  
1.15  
3.75  
solder resist  
occupied area  
transport direction during soldering  
Dimensions in mm  
sot363  
Fig 16. Wave soldering footprint BAV70S (SOT363/SC-88)  
BAV70_SER_7  
© NXP B.V. 2007. All rights reserved.  
Product data sheet  
Rev. 07 — 27 November 2007  
11 of 15  
BAV70 series  
NXP Semiconductors  
High-speed switching diodes  
2.2  
0.7  
0.6  
1.1  
2
3
2.0 0.85  
1.5  
0.5  
(3x)  
1
0.6  
(3x)  
msa438  
1.9  
Dimensions in mm  
solder lands  
solder resist  
solder paste  
occupied area  
Fig 17. Reflow soldering footprint BAV70T (SOT416/SC-75)  
2.65  
0.75  
1.30  
1.325  
solder lands  
2
solder paste  
solder resist  
0.50  
(3×)  
3
0.60  
(3×)  
2.35 0.85  
1.90  
occupied area  
1
Dimensions in mm  
0.55  
(3×)  
msa429  
2.40  
Fig 18. Reflow soldering footprint BAV70W (SOT323/SC-70)  
4.60  
4.00  
1.15  
2
3
3.65 2.10  
2.70  
solder lands  
0.90  
(2×)  
solder resist  
1
occupied area  
Dimensions in mm  
msa419  
preferred transport direction during soldering  
Fig 19. Wave soldering footprint BAV70W (SOT323/SC-70)  
BAV70_SER_7  
© NXP B.V. 2007. All rights reserved.  
Product data sheet  
Rev. 07 — 27 November 2007  
12 of 15  
BAV70 series  
NXP Semiconductors  
High-speed switching diodes  
12. Revision history  
Table 10. Revision history  
Document ID  
Release date  
20071127  
Data sheet status  
Change notice  
Supersedes  
BAV70_SER_7  
Product data sheet  
-
BAV70_6  
BAV70S_2  
BAV70T_3  
BAV70W_6  
Modifications:  
The format of this data sheet has been redesigned to comply with the new identity  
guidelines of NXP Semiconductors.  
Legal texts have been adapted to the new company name where appropriate.  
Type number BAV70M added  
Section 1.1 “General description”: amended  
Table 1 “Product overview”: added  
Table 2 “Quick reference data”: added  
Table 6 “Limiting values”: for BAV70, BAV70S and BAV70W change of VRRM maximum  
value from 85 V to 100 V  
Table 6 “Limiting values”: for BAV70, BAV70S and BAV70W change of VR maximum value  
from 75 V to 100 V  
Table 8 “Characteristics”: for BAV70, BAV70S, BAV70T and BAV70W change of  
IR condition VR from 75 V to 80 V for Tj = 25 °C  
Table 8 “Characteristics”: for BAV70, BAV70S and BAV70W change of IR maximum value  
from 2.5 µA to 0.5 µA for Tj = 25 °C  
Table 8 “Characteristics”: for BAV70T change of IR maximum value from 2.0 µA to 0.5 µA  
for Tj = 25 °C  
Table 8 “Characteristics”: for BAV70, BAV70S, BAV70T and BAV70W change of  
IR maximum value from 60 µA to 30 µA for IR condition VR = 25 V; Tj = 150 °C  
Table 8 “Characteristics”: for BAV70, BAV70S, BAV70T and BAV70W change of  
IR condition VR from 75 V to 80 V for Tj = 150 °C  
Section 8 “Test information”: added  
Section 10 “Packing information”: added  
Section 11 “Soldering”: added  
Section 13 “Legal information”: updated  
BAV70_6  
20020403  
19971021  
20040204  
20020405  
Product specification  
Product specification  
Product specification  
Product specification  
-
-
-
-
BAV70_5  
BAV70S_2  
BAV70T_3  
BAV70W_6  
BAV70S_1  
BAV70T_2  
BAV70W_5  
BAV70_SER_7  
© NXP B.V. 2007. All rights reserved.  
Product data sheet  
Rev. 07 — 27 November 2007  
13 of 15  
 
BAV70 series  
NXP Semiconductors  
High-speed switching diodes  
13. Legal information  
13.1 Data sheet status  
Document status[1][2]  
Product status[3]  
Development  
Definition  
Objective [short] data sheet  
This document contains data from the objective specification for product development.  
This document contains data from the preliminary specification.  
This document contains the product specification.  
Preliminary [short] data sheet Qualification  
Product [short] data sheet Production  
[1]  
[2]  
[3]  
Please consult the most recently issued document before initiating or completing a design.  
The term ‘short data sheet’ is explained in section “Definitions”.  
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status  
information is available on the Internet at URL http://www.nxp.com.  
malfunction of an NXP Semiconductors product can reasonably be expected  
13.2 Definitions  
to result in personal injury, death or severe property or environmental  
damage. NXP Semiconductors accepts no liability for inclusion and/or use of  
NXP Semiconductors products in such equipment or applications and  
therefore such inclusion and/or use is at the customer’s own risk.  
Draft — The document is a draft version only. The content is still under  
internal review and subject to formal approval, which may result in  
modifications or additions. NXP Semiconductors does not give any  
representations or warranties as to the accuracy or completeness of  
information included herein and shall have no liability for the consequences of  
use of such information.  
Applications — Applications that are described herein for any of these  
products are for illustrative purposes only. NXP Semiconductors makes no  
representation or warranty that such applications will be suitable for the  
specified use without further testing or modification.  
Short data sheet — A short data sheet is an extract from a full data sheet  
with the same product type number(s) and title. A short data sheet is intended  
for quick reference only and should not be relied upon to contain detailed and  
full information. For detailed and full information see the relevant full data  
sheet, which is available on request via the local NXP Semiconductors sales  
office. In case of any inconsistency or conflict with the short data sheet, the  
full data sheet shall prevail.  
Limiting values — Stress above one or more limiting values (as defined in  
the Absolute Maximum Ratings System of IEC 60134) may cause permanent  
damage to the device. Limiting values are stress ratings only and operation of  
the device at these or any other conditions above those given in the  
Characteristics sections of this document is not implied. Exposure to limiting  
values for extended periods may affect device reliability.  
Terms and conditions of sale — NXP Semiconductors products are sold  
subject to the general terms and conditions of commercial sale, as published  
at http://www.nxp.com/profile/terms, including those pertaining to warranty,  
intellectual property rights infringement and limitation of liability, unless  
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of  
any inconsistency or conflict between information in this document and such  
terms and conditions, the latter will prevail.  
13.3 Disclaimers  
General — Information in this document is believed to be accurate and  
reliable. However, NXP Semiconductors does not give any representations or  
warranties, expressed or implied, as to the accuracy or completeness of such  
information and shall have no liability for the consequences of use of such  
information.  
No offer to sell or license — Nothing in this document may be interpreted  
or construed as an offer to sell products that is open for acceptance or the  
grant, conveyance or implication of any license under any copyrights, patents  
or other industrial or intellectual property rights.  
Right to make changes — NXP Semiconductors reserves the right to make  
changes to information published in this document, including without  
limitation specifications and product descriptions, at any time and without  
notice. This document supersedes and replaces all information supplied prior  
to the publication hereof.  
13.4 Trademarks  
Notice: All referenced brands, product names, service names and trademarks  
are the property of their respective owners.  
Suitability for use — NXP Semiconductors products are not designed,  
authorized or warranted to be suitable for use in medical, military, aircraft,  
space or life support equipment, nor in applications where failure or  
14. Contact information  
For additional information, please visit: http://www.nxp.com  
For sales office addresses, send an email to: salesaddresses@nxp.com  
BAV70_SER_7  
© NXP B.V. 2007. All rights reserved.  
Product data sheet  
Rev. 07 — 27 November 2007  
14 of 15  
 
 
 
 
 
 
BAV70 series  
NXP Semiconductors  
High-speed switching diodes  
15. Contents  
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
1.1  
1.2  
1.3  
1.4  
General description. . . . . . . . . . . . . . . . . . . . . . 1  
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
Quick reference data. . . . . . . . . . . . . . . . . . . . . 1  
2
Pinning information. . . . . . . . . . . . . . . . . . . . . . 2  
Ordering information. . . . . . . . . . . . . . . . . . . . . 2  
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3  
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3  
Thermal characteristics. . . . . . . . . . . . . . . . . . . 4  
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 5  
Test information. . . . . . . . . . . . . . . . . . . . . . . . . 7  
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8  
Packing information. . . . . . . . . . . . . . . . . . . . . . 9  
Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9  
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 13  
3
4
5
6
7
8
9
10  
11  
12  
13  
Legal information. . . . . . . . . . . . . . . . . . . . . . . 14  
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 14  
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 14  
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 14  
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 14  
13.1  
13.2  
13.3  
13.4  
14  
15  
Contact information. . . . . . . . . . . . . . . . . . . . . 14  
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15  
Please be aware that important notices concerning this document and the product(s)  
described herein, have been included in section ‘Legal information’.  
© NXP B.V. 2007.  
All rights reserved.  
For more information, please visit: http://www.nxp.com  
For sales office addresses, please send an email to: salesaddresses@nxp.com  
Date of release: 27 November 2007  
Document identifier: BAV70_SER_7  
 
配单直通车
BAV70TT/R产品参数
型号:BAV70TT/R
是否无铅: 不含铅
是否Rohs认证: 符合
生命周期:Obsolete
IHS 制造商:NXP SEMICONDUCTORS
零件包装代码:SC-75
包装说明:R-PDSO-G3
针数:3
Reach Compliance Code:unknown
ECCN代码:EAR99
HTS代码:8541.10.00.80
风险等级:5.35
配置:COMMON CATHODE, 2 ELEMENTS
二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE
JESD-30 代码:R-PDSO-G3
JESD-609代码:e3
元件数量:2
端子数量:3
最高工作温度:150 °C
最大输出电流:0.75 A
封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR
封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260
最大功率耗散:0.17 W
认证状态:Not Qualified
最大重复峰值反向电压:100 V
最大反向恢复时间:0.004 µs
表面贴装:YES
端子面层:TIN
端子形式:GULL WING
端子位置:DUAL
处于峰值回流温度下的最长时间:40
Base Number Matches:1
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