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产品型号BAS21-E3-08的Datasheet PDF文件预览

BAS19, BAS20, BAS21  
www.vishay.com  
Vishay Semiconductors  
Small Signal Switching Diodes, High Voltage  
FEATURES  
• Silicon epitaxial planar diode  
3
• Fast switching diode in case SOT-23, especially  
suited for automatic insertion.  
• AEC-Q101 qualified  
• Base P/N-E3 - RoHS-compliant, commercial  
grade  
1
2
• Base P/N-HE3 - RoHS-compliant, AEC-Q101 qualified  
• Material categorization: For definitions of compliance  
please see www.vishay.com/doc?99912  
MECHANICAL DATA  
Case: SOT-23  
Weight: approx. 8.8 mg  
Packaging codes/options:  
18/10K per 13” reel (8 mm tape), 10K/box  
08/3K per 7” reel (8 mm tape), 15K/box  
PARTS TABLE  
TYPE  
DIFFERENTIATION  
TYPE  
MARKING  
INTERNAL  
CONSTRUCTION  
PART  
ORDERING CODE  
REMARKS  
BAS19-E3-08 or BAS19-E3-18  
BAS19-HE3-08 or BAS19-HE3-18  
BAS20-E3-08 or BAS20-E3-18  
BAS20-HE3-08 or BAS20-HE3-18  
BAS21-E3-08 or BAS21-E3-18  
BAS21-HE3-08 or BAS21-HE3-18  
BAS19  
BAS20  
BAS21  
VR = 100 V  
VR = 150 V  
VR = 200 V  
A8  
Single diode  
Single diode  
Single diode  
Tape and reel  
A81  
A82  
Tape and reel  
Tape and reel  
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)  
PARAMETER  
TEST CONDITION  
PART  
BAS19  
BAS20  
BAS21  
BAS19  
BAS20  
BAS21  
SYMBOL  
VALUE  
100  
UNIT  
VR  
V
V
V
V
V
V
Continuous recerse voltage  
VR  
150  
VR  
200  
VRRM  
VRRM  
VRRM  
120  
Repetitive peak reverse voltage  
200  
250  
Non repetitive peak forward   
t = 1 μs  
t = 1 s  
IFSM  
IFSM  
IF(AV)  
2.5  
0.5  
A
A
current  
Non repetitive peak forward   
surge current  
Maximum average forward   
(av. over any 20 ms period)  
200  
mA  
rectified current (1)  
DC forward current (2)  
IF  
200  
625  
250  
mA  
mA  
mW  
Repetitive peak forward current  
Power dissipation (2)  
IFRM  
Ptot  
Notes  
(1)  
Measured under pulse conditions; pulse time = tp 0.3 ms  
Device on fiberglass substrate, see layout on next page  
(2)  
Rev. 1.8, 15-May-13  
Document Number: 85540  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
BAS19, BAS20, BAS21  
www.vishay.com  
Vishay Semiconductors  
THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)  
PARAMETER  
TEST CONDITION  
SYMBOL  
VALUE  
430  
UNIT  
°C  
(1)  
Thermal resistance junction to ambient air  
Junction temperature  
RthJA  
Tj  
150  
°C  
Storage temperature range  
Operating temperature range  
Tstg  
Top  
- 65 to + 150  
- 55 to + 150  
°C  
°C  
Note  
(1)  
Device on fiberglass substrate, see layout drawing below  
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)  
PARAMETER  
TEST CONDITION  
PART  
SYMBOL  
MIN.  
TYP.  
MAX.  
1.0  
UNIT  
IF = 100 mA  
VF  
VF  
IR  
V
Forward voltage  
IF = 200 mA  
1.25  
100  
100  
100  
100  
V
V
V
V
R = 100 V  
R = 150 V  
R = 200 V  
BAS19  
BAS20  
BAS21  
nA  
nA  
nA  
μA  
IR  
Leakage current  
IR  
V
R = VRmax., Tj = 150 °C  
IR  
Dynamic forward resistance  
Diode capacitance  
IF = 10 mA  
rf  
5
V
R = 0, f = 1 MHz  
IF = IR = 30 mA, RL = 100 ,  
R = 3 mA  
CD  
5
pF  
Reverse recovery time  
trr  
50  
ns  
i
LAYOUT FOR RthJA TEST  
Thickness:  
Fiberglass 1.5 mm (0.059 inches)  
Copper leads 0.3 mm (0.012 inches)  
7.5 (0.3)  
3 (0.12)  
1 (0.4)  
2 (0.8)  
2 (0.8)  
1 (0.4)  
12 (0.47)  
0.8 (0.03)  
15 (0.59)  
5 (0.2)  
1.5 (0.06)  
5.1 (0.2)  
17451  
Rev. 1.8, 15-May-13  
Document Number: 85540  
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
BAS19, BAS20, BAS21  
www.vishay.com  
Vishay Semiconductors  
PACKAGE DIMENSIONS in millimeters (inches): SOT-23  
3.1 (0.122)  
2.8 (0.110)  
0.550 ref. (0.022 ref.)  
0.5 (0.020)  
0.3 (0.012)  
0.45 (0.018)  
0.35 (0.014)  
0.45 (0.018)  
0.35 (0.014)  
0° to 8°  
2.6 (0.102)  
2.35 (0.093)  
0.45 (0.018)  
0.35 (0.014)  
Foot print recommendation:  
0.7 (0.028)  
1 (0.039)  
0.9 (0.035)  
1 (0.039)  
0.9 (0.035)  
0.95 (0.037)  
0.95 (0.037)  
Document no.: 6.541-5014.01-4  
Rev. 8 - Date: 23.Sept.2009  
17418  
Rev. 1.8, 15-May-13  
Document Number: 85540  
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
Legal Disclaimer Notice  
www.vishay.com  
Vishay  
Disclaimer  
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE  
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.  
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,  
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other  
disclosure relating to any product.  
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or  
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all  
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,  
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular  
purpose, non-infringement and merchantability.  
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of  
typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding  
statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a  
particular product with the properties described in the product specification is suitable for use in a particular application.  
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over  
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s  
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,  
including but not limited to the warranty expressed therein.  
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining  
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.  
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk.  
Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for  
such applications.  
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document  
or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.  
© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED  
Revision: 08-Feb-17  
Document Number: 91000  
1
配单直通车
BAS21-E3-08产品参数
型号:BAS21-E3-08
是否无铅: 不含铅
是否Rohs认证: 符合
生命周期:Active
包装说明:R-PDSO-G3
针数:3
Reach Compliance Code:unknown
ECCN代码:EAR99
HTS代码:8541.10.00.70
Factory Lead Time:12 weeks
风险等级:0.58
配置:SINGLE
二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE
最大正向电压 (VF):1 V
JESD-30 代码:R-PDSO-G3
JESD-609代码:e3
湿度敏感等级:1
最大非重复峰值正向电流:0.5 A
元件数量:1
端子数量:3
最高工作温度:150 °C
最大输出电流:0.2 A
封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR
封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260
最大功率耗散:0.25 W
最大重复峰值反向电压:250 V
最大反向恢复时间:0.05 µs
子类别:Rectifier Diodes
表面贴装:YES
端子面层:Matte Tin (Sn)
端子形式:GULL WING
端子位置:DUAL
处于峰值回流温度下的最长时间:10
Base Number Matches:1
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