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  • 北京首天国际有限公司

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产品型号BAS31/T3的Datasheet PDF文件预览

DISCRETE SEMICONDUCTORS  
DATA SHEET  
book, halfpage  
BAS29; BAS31; BAS35  
General purpose controlled  
avalanche (double) diodes  
Product data sheet  
2003 Mar 20  
Supersedes data of 2001 Oct 10  
NXP Semiconductors  
Product data sheet  
General purpose controlled avalanche  
(double) diodes  
BAS29; BAS31; BAS35  
FEATURES  
PINNING  
Small plastic SMD package  
DESCRIPTION  
PIN  
Switching speed: max. 50 ns  
BAS29  
anode  
not connected cathode  
BAS31  
BAS35  
General application  
1
2
3
anode  
cathode (k1)  
cathode (k2)  
Continuous reverse voltage: max. 90 V  
Repetitive peak reverse voltage: max. 110 V  
Repetitive peak forward current: max. 600 mA  
Repetitive peak reverse current: max. 600 mA.  
cathode  
common  
connection  
common  
anode  
handbook, page  
APPLICATIONS  
2
1
General purpose switching in e.g. surface mounted  
2
1
circuits.  
3
DESCRIPTION  
3
General purpose switching diodes fabricated in planar  
technology, and encapsulated in small rectangular plastic  
SMD SOT23 packages. The BAS29 consists of a single  
diode. The BAS31 has two diodes in series. The BAS35  
has two diodes with a common anode.  
a. Simplified outline.  
c. BAS31 diode.  
2
1
2
1
n.c.  
MARKING  
3
3
TYPE NUMBER  
BAS29  
MARKING CODE(1)  
b. BAS29 diode.  
d. BAS35 diode.  
MAM233  
L20 or A8  
L21 or V1  
L22 or V2  
BAS31  
BAS35  
Fig.1 Simplified outline (SOT23) and symbols.  
Note  
1. = p : Made in Hong Kong.  
= t : Made in Malaysia.  
= W : Made in China.  
2003 Mar 20  
2
NXP Semiconductors  
Product data sheet  
General purpose controlled avalanche  
(double) diodes  
BAS29; BAS31; BAS35  
LIMITING VALUES  
In accordance with the Absolute Maximum Rating System (IEC 60134).  
SYMBOL  
Per diode  
PARAMETER  
CONDITIONS  
MIN.  
MAX.  
UNIT  
VRRM  
VR  
repetitive peak reverse voltage  
continuous reverse voltage  
continuous forward current  
110  
V
V
90  
IF  
single diode loaded; see Fig.2;  
note 1  
250  
mA  
mA  
mA  
double diode loaded; see Fig.2;  
note 1  
150  
600  
IFRM  
IFSM  
repetitive peak forward current  
non-repetitive peak forward current square wave; Tj = 25 °C prior to  
surge; see Fig.4  
t = 1 µs  
t = 100 µs  
t = 1 s  
10  
A
4
A
0.75  
250  
600  
5
A
Ptot  
total power dissipation  
Tamb = 25 °C; note 1  
mW  
mA  
mJ  
°C  
°C  
IRRM  
ERRM  
Tstg  
Tj  
repetitive peak reverse current  
repetitive peak reverse energy  
storage temperature  
tp 50 µs; f 20 Hz; Tj = 25 °C  
65  
+150  
150  
junction temperature  
Note  
1. Device mounted on an FR4 printed-circuit board.  
2003 Mar 20  
3
NXP Semiconductors  
Product data sheet  
General purpose controlled avalanche  
(double) diodes  
BAS29; BAS31; BAS35  
ELECTRICAL CHARACTERISTICS  
Tj = 25 °C unless otherwise specified.  
SYMBOL  
PARAMETER  
CONDITIONS  
MIN.  
MAX.  
UNIT  
Per diode  
VF  
forward voltage  
see Fig.3  
IF = 10 mA  
IF = 50 mA  
750  
mV  
840  
900  
1
mV  
mV  
V
IF = 100 mA  
IF = 200 mA  
IF = 400 mA  
see Fig.5  
1.25  
V
IR  
reverse current  
VR = 90 V  
100  
100  
170  
nA  
µA  
V
VR = 90 V; Tj = 150 °C  
IR = 1 mA  
V(BR)R  
reverse avalanche breakdown  
voltage  
120  
Cd  
trr  
diode capacitance  
f = 1 MHz; VR = 0; see Fig.6  
35  
50  
pF  
ns  
reverse recovery time  
when switched from IF = 30 mA to  
IR = 30 mA; RL = 100 ; measured  
at IR = 3 mA; see Fig.7  
THERMAL CHARACTERISTICS  
SYMBOL  
Rth j-tp  
PARAMETER  
thermal resistance from junction to tie-point  
thermal resistance from junction to ambient note 1  
CONDITIONS  
VALUE  
360  
UNIT  
K/W  
K/W  
Rth j-a  
500  
Note  
1. Device mounted on an FR4 printed-circuit board.  
2003 Mar 20  
4
NXP Semiconductors  
Product data sheet  
General purpose controlled avalanche  
(double) diodes  
BAS29; BAS31; BAS35  
GRAPHICAL DATA  
MBG440  
MBH280  
300  
600  
handbook, halfpage  
handbook, halfpage  
I
IF  
(mA)  
F
(mA)  
(1)  
200  
400  
200  
(1)  
(2)  
(3)  
100  
(2)  
0
0
0
o
0
100  
200  
1
2
T
( C)  
V
(V)  
amb  
F
Device mounted on an FR4 printed-circuit board.  
(1) Single diode loaded.  
(1) Tj = 150 °C; typical values.  
(2) Tj = 25 °C; typical values.  
(3) Tj = 25 °C; maximum values.  
(2) Double diode loaded.  
Fig.2 Maximum permissible continuous forward  
current as a function of ambient  
temperature.  
Fig.3 Forward current as a function of forward  
voltage.  
MBH327  
2
10  
I
FSM  
(A)  
10  
1
1  
10  
2
3
4
1
10  
10  
10  
10  
t
(µs)  
p
Based on square wave currents.  
Tj = 25 °C prior to surge.  
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.  
2003 Mar 20  
5
NXP Semiconductors  
Product data sheet  
General purpose controlled avalanche  
(double) diodes  
BAS29; BAS31; BAS35  
MBH282  
MGD003  
2
10  
40  
handbook, halfpage  
handbook, halfpage  
I
C
d
(pF)  
R
(µA)  
10  
30  
(1)  
(2)  
1
20  
10  
1  
10  
10  
2  
0
0
o
0
100  
200  
T ( C)  
j
10  
20  
30  
V
(V)  
R
(1) VR = 90 V; maximum values.  
(2) VR = 90 V; typical values.  
f = 1 MHz; Tj = 25 °C.  
Fig.5 Reverse current as a function of junction  
temperature.  
Fig.6 Diode capacitance as a function of reverse  
voltage; typical values.  
t
t
p
r
t
D.U.T.  
I
10%  
I
t
R
= 50  
F
F
rr  
S
SAMPLING  
t
OSCILLOSCOPE  
R = 50 Ω  
V = V  
I x R  
F S  
R
i
(1)  
90%  
V
R
MGA881  
input signal  
output signal  
(1) IR = 3 mA.  
Fig.7 Reverse recovery voltage test circuit and waveforms.  
6
2003 Mar 20  
NXP Semiconductors  
Product data sheet  
General purpose controlled avalanche  
(double) diodes  
BAS29; BAS31; BAS35  
PACKAGE OUTLINE  
Plastic surface mounted package; 3 leads  
SOT23  
D
B
E
A
X
H
v
M
A
E
3
Q
A
A
1
c
1
2
e
b
w M  
B
1
L
p
p
e
detail X  
0
1
2 mm  
scale  
DIMENSIONS (mm are the original dimensions)  
A
1
UNIT  
b
c
D
E
e
e
H
L
Q
v
w
A
p
p
1
E
max.  
1.1  
0.9  
0.48  
0.38  
0.15  
0.09  
3.0  
2.8  
1.4  
1.2  
2.5  
2.1  
0.45  
0.15  
0.55  
0.45  
mm  
0.1  
1.9  
0.95  
0.2  
0.1  
REFERENCES  
EUROPEAN  
PROJECTION  
OUTLINE  
VERSION  
ISSUE DATE  
IEC  
JEDEC  
EIAJ  
97-02-28  
99-09-13  
SOT23  
TO-236AB  
2003 Mar 20  
7
NXP Semiconductors  
Product data sheet  
General purpose controlled avalanche  
(double) diodes  
BAS29; BAS31; BAS35  
DATA SHEET STATUS  
DOCUMENT  
STATUS(1)  
PRODUCT  
STATUS(2)  
DEFINITION  
Objective data sheet  
Development  
This document contains data from the objective specification for product  
development.  
Preliminary data sheet  
Product data sheet  
Qualification  
Production  
This document contains data from the preliminary specification.  
This document contains the product specification.  
Notes  
1. Please consult the most recently issued document before initiating or completing a design.  
2. The product status of device(s) described in this document may have changed since this document was published  
and may differ in case of multiple devices. The latest product status information is available on the Internet at  
URL http://www.nxp.com.  
DISCLAIMERS  
System of IEC 60134) may cause permanent damage to  
the device. Limiting values are stress ratings only and  
operation of the device at these or any other conditions  
above those given in the Characteristics sections of this  
document is not implied. Exposure to limiting values for  
extended periods may affect device reliability.  
General Information in this document is believed to be  
accurate and reliable. However, NXP Semiconductors  
does not give any representations or warranties,  
expressed or implied, as to the accuracy or completeness  
of such information and shall have no liability for the  
consequences of use of such information.  
Terms and conditions of sale NXP Semiconductors  
products are sold subject to the general terms and  
conditions of commercial sale, as published at  
http://www.nxp.com/profile/terms, including those  
pertaining to warranty, intellectual property rights  
infringement and limitation of liability, unless explicitly  
otherwise agreed to in writing by NXP Semiconductors. In  
case of any inconsistency or conflict between information  
in this document and such terms and conditions, the latter  
will prevail.  
Right to make changes NXP Semiconductors  
reserves the right to make changes to information  
published in this document, including without limitation  
specifications and product descriptions, at any time and  
without notice. This document supersedes and replaces all  
information supplied prior to the publication hereof.  
Suitability for use NXP Semiconductors products are  
not designed, authorized or warranted to be suitable for  
use in medical, military, aircraft, space or life support  
equipment, nor in applications where failure or malfunction  
of an NXP Semiconductors product can reasonably be  
expected to result in personal injury, death or severe  
property or environmental damage. NXP Semiconductors  
accepts no liability for inclusion and/or use of NXP  
Semiconductors products in such equipment or  
applications and therefore such inclusion and/or use is at  
the customer’s own risk.  
No offer to sell or license Nothing in this document  
may be interpreted or construed as an offer to sell products  
that is open for acceptance or the grant, conveyance or  
implication of any license under any copyrights, patents or  
other industrial or intellectual property rights.  
Export control This document as well as the item(s)  
described herein may be subject to export control  
regulations. Export might require a prior authorization from  
national authorities.  
Applications Applications that are described herein for  
any of these products are for illustrative purposes only.  
NXP Semiconductors makes no representation or  
warranty that such applications will be suitable for the  
specified use without further testing or modification.  
Quick reference data The Quick reference data is an  
extract of the product data given in the Limiting values and  
Characteristics sections of this document, and as such is  
not complete, exhaustive or legally binding.  
Limiting values Stress above one or more limiting  
values (as defined in the Absolute Maximum Ratings  
2003 Mar 20  
8
NXP Semiconductors  
Customer notification  
This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were  
made to the content, except for the legal definitions and disclaimers.  
Contact information  
For additional information please visit: http://www.nxp.com  
For sales offices addresses send e-mail to: salesaddresses@nxp.com  
© NXP B.V. 2009  
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.  
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed  
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license  
under patent- or other industrial or intellectual property rights.  
Printed in The Netherlands  
613514/05/pp9  
Date of release: 2003 Mar 20  
Document order number: 9397 750 10962  
配单直通车
BAS31/T3产品参数
型号:BAS31/T3
是否Rohs认证: 符合
生命周期:Obsolete
IHS 制造商:NEXPERIA
包装说明:R-PDSO-G3
Reach Compliance Code:compliant
ECCN代码:EAR99
HTS代码:8541.10.00.70
风险等级:5.28
配置:SERIES CONNECTED, CENTER TAP, 2 ELEMENTS
二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE
JEDEC-95代码:TO-236AB
JESD-30 代码:R-PDSO-G3
JESD-609代码:e3
元件数量:2
端子数量:3
最高工作温度:150 °C
最大输出电流:0.25 A
封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR
封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260
最大功率耗散:0.25 W
最大重复峰值反向电压:110 V
最大反向恢复时间:0.05 µs
表面贴装:YES
技术:AVALANCHE
端子面层:TIN
端子形式:GULL WING
端子位置:DUAL
处于峰值回流温度下的最长时间:40
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