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  • 北京元坤伟业科技有限公司

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  • BAS70-04E6433
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产品型号BAS70-04E6433的Datasheet PDF文件预览

BAS70.../BAS170W  
Silicon Schottky Diode  
General-purpose diode for high-speed switching  
Circuit protection  
Voltage clamping  
High-level detecting and mixing  
BAS70-04S: For orientation in reel see  
package information below  
Pb-free (RoHS compliant) package  
1)  
Qualified according AEC Q101  
BAS170W  
BAS70  
BAS70-04  
BAS70-04S  
BAS70-05  
BAS70-02L  
BAS70-02W  
BAS70-02V  
BAS70-04W  
BAS70-05W  
6
5
4
3
3
3
D
4
D
3
D
2
1
2
D
1
D
1
D
2
D
1
D
2
1
2
3
1
2
1
2
1
2
BAS70-06  
BAS70-07  
BAS70-06W  
BAS70-07W  
3
4
3
D
1
D
2
D
2
D
1
1
2
1
2
1
BAS70-02L is not qualified according AEC Q101  
2014-02-13  
1
BAS70.../BAS170W  
Type  
BAS170W  
BAS70  
Package  
SOD323  
SOT23  
TSLP-2-1  
SC79  
SCD80  
SOT23  
SOT363  
SOT323  
SOT23  
SOT323  
SOT23  
SOT323  
SOT143  
SOT343  
Configuration  
single  
single  
single, leadless  
single  
single  
series  
dual series  
series  
common cathode  
common cathode  
common anode  
common anode  
parallel pair  
parallel pair  
L (nH) Marking  
S
1.8  
1.8  
0.4  
0.6  
0.6  
1.8  
1.6  
1.4  
1.8  
1.4  
1.8  
1.4  
2
white 7  
73s  
F
c
73  
74s  
74s  
74s  
75s  
75s  
76s  
76s  
77s  
77s  
BAS70-02L  
BAS70-02V  
BAS70-02W*  
BAS70-04  
BAS70-04S  
BAS70-04W  
BAS70-05  
BAS70-05W  
BAS70-06  
BAS70-06W  
BAS70-07  
BAS70-07W  
1.8  
* Not for new design  
Maximum Ratings at T = 25 °C, unless otherwise specified  
A
Parameter  
Symbol  
Value  
Unit  
70  
70  
V
mA  
Diode reverse voltage  
Forward current  
V
R
I
F
100  
Non-repetitive peak surge forward current  
t 10ms  
I
FSM  
mW  
Total power dissipation  
P
tot  
BAS70, BAS70-07, T 72 °C  
250  
250  
250  
250  
250  
250  
250  
250  
S
BAS70-02L, T 117 °C  
S
BAS70-02W, -02V, T 107 °C  
S
BAS70-04, BAS70-06, T 48 °C  
S
BAS70-04S/W/-06W, BAS170W, T 97 °C  
S
BAS70-05, T 22 °C  
S
BAS70-05W, T 90 °C  
S
BAS70-07W, T 114 °C  
S
150  
°C  
Junction temperature  
Operating temperature range  
Storage temperature  
T
T
T
J
-55 ... 125  
-55 ... 150  
op  
Stg  
2014-02-13  
2
BAS70.../BAS170W  
Thermal Resistance  
Parameter  
Junction - soldering point  
BAS70, BAS70-07  
BAS70-02L  
BAS70-02W, -02V  
BAS70-04, BAS70-06  
BAS70-04S/W, BAS70-06W  
BAS70-05  
Symbol  
R
thJS  
Value  
Unit  
K/W  
1)  
310  
130  
170  
410  
210  
510  
240  
145  
190  
BAS70-05W  
BAS70-07W  
BAS170W  
Electrical Characteristics at T = 25 °C, unless otherwise specified  
A
Parameter  
Symbol  
Values  
Unit  
min.  
70  
-
typ. max.  
DC Characteristics  
Breakdown voltage  
-
-
-
V
V
(BR)  
I
= 10 µA  
(BR)  
0.1  
Reverse current  
I
µA  
R
V = 50 V  
R
mV  
Forward voltage  
V
F
I = 1 mA  
300  
600  
720  
375  
705  
880  
410  
750  
1000  
F
I = 10 mA  
F
I = 15 mA  
F
2)  
-
-
20  
Forward voltage matching  
V  
F
I = 10 mA  
F
1For calculation of R  
please refer to Application Note AN077 (Thermal Resistance Calculation)  
thJA  
2
V is the difference between lowest and highest V in a multiple diode component.  
F
F
2014-02-13  
3
BAS70.../BAS170W  
Electrical Characteristics at T = 25 °C, unless otherwise specified  
A
Parameter  
Symbol  
Values  
typ. max.  
Unit  
min.  
AC Characteristics  
-
1.5  
34  
-
2
-
pF  
Diode capacitance  
C
T
rr  
V = 0 , f = 1 MHz  
R
-
-
Forward resistance  
r
f
I = 10 mA, f = 10 kHz  
F
100 ps  
Charge carrier life time  
τ
I = 25 mA  
F
2014-02-13  
4
BAS70.../BAS170W  
Diode capacitance C = ƒ (V )  
Forward resistance r = ƒ (I )  
f F  
T
R
f = 1MHz  
f = 10 kHz  
10 4  
BAS 70W/BAS 170W  
EHB00044  
2.0  
pF  
Ohm  
CT  
1.5  
1.0  
0.5  
0.0  
10 3  
10 2  
10 1  
10 -2  
10 -1  
10 0  
10 1  
10 2  
mA  
F
0
20  
40  
60  
V
80  
I
VR  
Reverse current I = ƒ(V )  
Forward current I = ƒ (V )  
R
R
F
F
T = Parameter  
T = Parameter  
A
A
BAS 70W/BAS 170W  
EHB00042  
BAS 70W/BAS 170W  
EHB00043  
102  
mA  
102  
µ A  
TA = 150 C  
Ι F  
Ι R  
101  
101  
85 C  
100  
100  
TA = -40 C  
10-1  
25 C  
85 C  
150 C  
10-1  
25 C  
10-2  
10-3  
10-2  
0
20  
40  
60  
V
80  
0.0  
0.5  
1.0  
V
1.5  
VR  
VF  
2014-02-13  
5
BAS70.../BAS170W  
Forward current I = ƒ (T )  
Forward current I = ƒ (T )  
F S  
F
S
BAS70, BAS70-07  
BAS70-02L  
80  
80  
mA  
mA  
60  
50  
40  
30  
20  
10  
0
60  
50  
40  
30  
20  
10  
0
°C  
°C  
0
15 30 45 60 75 90 105 120  
150  
0
15 30 45 60 75 90 105 120  
150  
T
T
S
S
Forward current I = ƒ (T )  
Forward current I = ƒ (T )  
F
S
F
S
BAS70-02W, -02V  
BAS70-04, BAS70-06  
80  
80  
mA  
mA  
60  
50  
40  
30  
20  
10  
0
60  
50  
40  
30  
20  
10  
0
°C  
°C  
0
15 30 45 60 75 90 105 120  
150  
0
15 30 45 60 75 90 105 120  
150  
T
T
S
S
2014-02-13  
6
BAS70.../BAS170W  
Forward current I = ƒ (T )  
Forward current I = ƒ (T )  
F S  
F
S
BAS70-04S/W, BAS70-06W, BAS170W  
BAS70-05  
80  
80  
mA  
mA  
60  
50  
40  
30  
20  
10  
0
60  
50  
40  
30  
20  
10  
0
0
°C  
°C  
0
15 30 45 60 75 90 105 120  
150  
15 30 45 60 75 90 105 120  
150  
T
T
S
S
Forward current I = ƒ (T )  
Forward current I = ƒ (T )  
F S  
F
S
BAS70-05W  
BAS70-07W  
80  
80  
mA  
mA  
60  
50  
40  
30  
20  
10  
0
60  
50  
40  
30  
20  
10  
0
°C  
°C  
0
15 30 45 60 75 90 105 120  
150  
0
15 30 45 60 75 90 105 120  
150  
T
T
S
S
2014-02-13  
7
BAS70.../BAS170W  
Forward current I = ƒ (T )  
Permissible Puls Load R  
= ƒ (t )  
F
S
thJS  
p
BAS170W  
BAS70  
10 3  
K/W  
80  
mA  
60  
50  
40  
30  
20  
10  
0
10 2  
0.5  
0.2  
0.1  
0.05  
0.02  
10 1  
0.01  
0.005  
D = 0  
10 0  
10 -6  
10 -5  
10 -4  
10 -3  
10 -2  
10 0  
°C  
s
0
15 30 45 60 75 90 105 120  
150  
T
t
p
S
Permissible Pulse Load  
Permissible Puls Load R  
= ƒ (t )  
thJS  
p
I
/ I  
= ƒ (t )  
BAS70-02L  
Fmax FDC  
BAS70  
10 2  
p
10 3  
K/W  
-
10 2  
D = 0  
0.005  
0.01  
0.02  
0.05  
0.1  
10 1  
0.5  
0.2  
10 1  
0.1  
0.2  
0.05  
0.02  
0.01  
0.005  
D = 0  
0.5  
10 0  
10 0  
10 -6  
10 -5  
10 -4  
10 -3  
10 -2  
10 0  
10 -6  
10 -5  
10 -4  
10 -3  
10 -2  
10 0  
s
s
t
t
p
p
2014-02-13  
8
BAS70.../BAS170W  
Permissible Pulse Load  
Permissible Puls Load R  
= ƒ (t )  
thJS  
p
I
/ I  
= ƒ (t )  
BAS70-02W, -02V  
Fmax FDC  
BAS70-02L  
10 1  
p
10 3  
K/W  
10 2  
D = 0  
0.005  
0.01  
0.02  
0.05  
0.1  
D=0.5  
0.2  
-
0.1  
0.05  
0.02  
0.01  
0.005  
0
0.2  
10 1  
0.5  
10 0  
10 0  
10 -6  
10 -5  
10 -4  
10 -3  
10 -2  
10 0  
10 -6  
10 -5  
10 -4  
10 -3  
10 -2  
10 0  
s
s
t
t
p
p
Permissible Pulse Load  
/ I = ƒ (t )  
Permissible Puls Load R  
BAS70-04, BAS70-06  
= ƒ (t )  
thJS  
p
I
Fmax FDC  
p
BAS70-02W, -02V  
10 1  
10 3  
K/W  
D=0  
0.005  
0.01  
0.02  
0.05  
0.1  
10 2  
0.2  
0.5  
0.2  
0.5  
0.1  
10 1  
0.05  
0.02  
0.01  
0.005  
D = 0  
10 0  
10 0  
10 -6  
10 -5  
10 -4  
10 -3  
10 -2  
10 0  
10 -6  
10 -5  
10 -4  
10 -3  
10 -2  
10 0  
s
s
t
t
P
p
2014-02-13  
9
BAS70.../BAS170W  
Permissible Pulse Load  
/ I = ƒ (t )  
Permissible Puls Load R  
BAS70-04S  
= ƒ (t )  
thJS  
p
I
Fmax FDC  
p
BAS70-04, BAS70-06  
10 2  
10 3  
K/W  
-
D = 0  
0.005  
0.01  
0.02  
0.05  
0.1  
10 2  
10 1  
0.2  
0.5  
0.5  
0.2  
10 1  
0.1  
0.05  
0.02  
0.01  
0.005  
D = 0  
10 0  
10 0  
10 -6  
10 -5  
10 -4  
10 -3  
10 -2  
10 0  
10 -6  
10 -5  
10 -4  
10 -3  
10 -2  
10 0  
s
s
t
t
p
P
Permissible Pulse Load  
Permissible Puls Load R  
= ƒ (t )  
thJS  
p
I
/ I  
= ƒ (t )  
BAS70-04W, BAS70-06W  
Fmax FDC  
BAS70-04S  
10 2  
p
10 3  
K/W  
-
10 2  
D = 0  
0.005  
0.01  
0.02  
0.05  
0.1  
10 1  
0.5  
0.2  
10 1  
0.1  
0.05  
0.02  
0.01  
0.2  
0.5  
0.005  
D = 0  
10 0  
10 0  
10 -6  
10 -5  
10 -4  
10 -3  
10 -2  
10 0  
10 -6  
10 -5  
10 -4  
10 -3  
10 -2  
10 0  
s
s
t
t
p
p
2014-02-13  
10  
BAS70.../BAS170W  
Permissible Pulse Load  
/ I = ƒ (t )  
Permissible Puls Load R  
BAS70-05  
= ƒ (t )  
thJS  
p
I
Fmax FDC  
p
BAS70-04W, BAS70-06W  
10 1  
10 3  
K/W  
D = 0  
0.005  
0.01  
10 2  
0.02  
-
0.5  
0.2  
0.1  
0.05  
0.05  
0.1  
0.2  
0.5  
10 1  
0.02  
0.01  
0.005  
D = 0  
10 0  
10 0  
10 -6  
10 -5  
10 -4  
10 -3  
10 -2  
10 0  
10 -6  
10 -5  
10 -4  
10 -3  
10 -2  
10 0  
s
s
t
t
p
p
Permissible Pulse Load  
Permissible Puls Load R  
= ƒ (t )  
thJS  
p
I
/ I  
= ƒ (t )  
BAS70-05W  
Fmax FDC  
BAS70-05  
10 2  
p
10 3  
K/W  
-
10 2  
D = 0  
0.005  
0.01  
0.02  
0.05  
0.1  
0.5  
10 1  
0.2  
0.1  
0.05  
0.02  
0.2  
10 1  
0.5  
0.01  
0.005  
D = 0  
10 0  
10 0  
10 -6  
10 -5  
10 -4  
10 -3  
10 -2  
10 0  
10 -6  
10 -5  
10 -4  
10 -3  
10 -2  
10 0  
s
s
t
t
p
p
2014-02-13  
11  
BAS70.../BAS170W  
Permissible Pulse Load  
/ I = ƒ (t )  
Permissible Puls Load R  
BAS70-07W  
= ƒ (t )  
thJS  
p
I
Fmax FDC  
p
BAS70-05W  
10 1  
10 3  
K/W  
D = 0  
0.005  
0.01  
0.02  
0.05  
0.1  
10 2  
-
0.2  
0.5  
0.2  
0.5  
0.1  
10 1  
0.05  
0.02  
0.01  
0.005  
D = 0  
10 0  
10 0  
10 -6  
10 -5  
10 -4  
10 -3  
10 -2  
10 0  
10 -6  
10 -5  
10 -4  
10 -3  
10 -2  
10 0  
s
s
t
t
p
p
Permissible Pulse Load  
/ I = ƒ (t )  
Permissible Puls Load R  
BAS170W  
= ƒ (t )  
thJS p  
I
Fmax FDC  
p
BAS70-07W  
10 2  
10 3  
10 2  
10 1  
10 0  
-
D = 0  
0.005  
0.01  
0.02  
0.05  
0.1  
10 1  
0.5  
0.2  
0.2  
0.5  
0.1  
0.05  
0.02  
0.01  
0.005  
D = 0  
10 0  
10 -6  
10 -5  
10 -4  
10 -3  
10 -2  
10 0  
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2  
10 0  
s
s
t
t
p
p
2014-02-13  
12  
BAS70.../BAS170W  
Permissible Pulse Load  
I
/ I  
= ƒ (t )  
Fmax FDC  
BAS170W  
10 1  
p
D = 0  
0.005  
0.01  
0.02  
0.05  
0.1  
0.2  
0.5  
10 0  
10 -6  
10 -5  
10 -4  
10 -3  
10 -2  
10 0  
s
t
p
2014-02-13  
13  
Package SC79  
BAS70.../BAS170W  
2014-02-13  
14  
Package SCD80  
BAS70.../BAS170W  
Package Outline  
M
±02  
A
±±0.  
±0.3+±0±ꢀ  
±08  
-±0±3  
A
2
.
±03  
Cathode  
marking  
±±0±ꢀ  
±±0.  
±07  
Foot Print  
±03ꢀ  
Marking Layout (Example)  
2±±ꢀ, June  
Date code  
BAR63-±2W  
Type code  
Cathode marking  
Laser marking  
Standard Packing  
Reel ø.8± mm = 30±±± Pieces/Reel  
Reel ø.8± mm = 80±±± Pieces/Reel (2 mm Pitch)  
Reel ø33± mm = .±0±±± Pieces/Reel  
Standard  
4
Reel with 2 mm Pitch  
2
±02  
±07  
Cathode  
marking  
±04  
±09  
Cathode  
marking  
2014-02-13  
15  
BAS70.../BAS170W  
Date Code marking for discrete packages with  
one digit (SCD80, SC79, SC751)) CES-Code  
Month 2003 2004 2005 2006 2007 2008 2009 2010 2011 2012 2013 2014  
01  
02  
03  
04  
05  
06  
07  
08  
09  
10  
11  
12  
a
b
c
d
e
f
p
q
r
A
B
C
D
E
F
G
H
J
P
Q
R
S
T
U
V
X
Y
Z
4
a
b
c
d
e
f
p
q
r
A
B
C
D
E
F
G
H
J
P
Q
R
S
T
U
V
X
Y
Z
4
a
b
c
d
e
f
p
q
r
A
B
C
D
E
F
G
H
J
P
Q
R
S
T
U
V
X
Y
Z
4
s
t
s
t
s
t
u
v
x
y
z
2
3
u
v
x
y
z
2
3
u
v
x
y
z
2
3
g
h
j
g
h
j
g
h
j
k
l
K
L
k
l
K
L
k
l
K
L
n
N
5
n
N
5
n
N
5
1) New Marking Layout for SC75, implemented at October 2005.  
.
2014-02-13  
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Package SOD323  
BAS70.../BAS170W  
2014-02-13  
17  
Package SOT143  
BAS70.../BAS170W  
2014-02-13  
18  
Package SOT23  
BAS70.../BAS170W  
2014-02-13  
19  
Package SOT323  
BAS70.../BAS170W  
2014-02-13  
20  
Package SOT343  
BAS70.../BAS170W  
2014-02-13  
21  
Package SOT363  
BAS70.../BAS170W  
2014-02-13  
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Package TSLP-2-1  
BAS70.../BAS170W  
2014-02-13  
23  
BAS70.../BAS170W  
Edition 2009-11-16  
Published by  
Infineon Technologies AG  
81726 Munich, Germany  
2009 Infineon Technologies AG  
All Rights Reserved.  
Legal Disclaimer  
The information given in this document shall in no event be regarded as a guarantee  
of conditions or characteristics. With respect to any examples or hints given herein,  
any typical values stated herein and/or any information regarding the application of  
the device, Infineon Technologies hereby disclaims any and all warranties and  
liabilities of any kind, including without limitation, warranties of non-infringement of  
intellectual property rights of any third party.  
Information  
For further information on technology, delivery terms and conditions and prices,  
please contact the nearest Infineon Technologies Office (<www.infineon.com>).  
Warnings  
Due to technical requirements, components may contain dangerous substances.  
For information on the types in question, please contact the nearest Infineon  
Technologies Office.  
Infineon Technologies components may be used in life-support devices or systems  
only with the express written approval of Infineon Technologies, if a failure of such  
components can reasonably be expected to cause the failure of that life-support  
device or system or to affect the safety or effectiveness of that device or system.  
Life support devices or systems are intended to be implanted in the human body or  
to support and/or maintain and sustain and/or protect human life. If they fail, it is  
reasonable to assume that the health of the user or other persons may be  
endangered.  
2014-02-13  
24  
配单直通车
BAS70-04E6433产品参数
型号:BAS70-04E6433
生命周期:Transferred
IHS 制造商:SIEMENS A G
包装说明:R-PDSO-G3
Reach Compliance Code:unknown
ECCN代码:EAR99
HTS代码:8541.10.00.60
风险等级:5.12
配置:SERIES CONNECTED, CENTER TAP, 2 ELEMENTS
最大二极管电容:2 pF
二极管元件材料:SILICON
二极管类型:MIXER DIODE
JESD-30 代码:R-PDSO-G3
元件数量:2
端子数量:3
封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR
封装形式:SMALL OUTLINE
最大功率耗散:0.45 W
认证状态:Not Qualified
表面贴装:YES
技术:SCHOTTKY
端子形式:GULL WING
端子位置:DUAL
Base Number Matches:1
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