BAS7004E6327全新原装原理图各脚功能电路原理芯片引脚定义-中国IC网-芯三七

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产品型号BAS7004E6327的概述

芯片BAS7004E6327的概述 BAS7004E6327是一种先进的半导体器件，广泛应用于现代电子设备中。随着科技的不断进步，半导体技术的发展促使了诸多应用场景的革新，BAS7004E6327凭借其卓越的性能和可靠性，在行业内稳占一席之地。其设计理念旨在提供高效、低功耗的解决方案，以满足不断增长的市场需求。芯片BAS7004E6327的详细参数 BAS7004E6327的技术参数涵盖了多个重要维度。首先，工作电压范围通常在3V至15V之间，这使得芯片能在不同的工况下工作。工作温度范围广泛，通常为-40°C至125°C，这为其在各种环境下的应用提供了保证。功耗方面，BAS7004E6327在静态模式下的功耗约为几毫安，动态模式下功耗相对较低，适合便携类设备。此外，BAS7004E6327在信号处理速度方面表现不俗，能够支持高达几百kHz的频率。这为高频信号处理应用提供了良好的技术...

产品型号BAS7004E6327HTSA1的Datasheet PDF文件预览

BAS70.../BAS170W

Silicon Schottky Diode

• General-purpose diode for high-speed switching

• Circuit protection

• Voltage clamping

• High-level detecting and mixing

• BAS70-04S: For orientation in reel see

package information below

• Pb-free (RoHS compliant) package

• Qualified according AEC Q101

BAS170W

BAS70

BAS70-04

BAS70-04S

BAS70-05

BAS70-02L

BAS70-02W

BAS70-02V

BAS70-04W

BAS70-05W

BAS70-06

BAS70-07

BAS70-06W

BAS70-07W

BAS70-02L is not qualified according AEC Q101

2014-02-13

BAS70.../BAS170W

Type

BAS170W

BAS70

Package

SOD323

SOT23

TSLP-2-1

SC79

SCD80

SOT23

SOT363

SOT323

SOT23

SOT323

SOT23

SOT323

SOT143

SOT343

Configuration

single

single, leadless

single

series

dual series

series

common cathode

common anode

parallel pair

L (nH) Marking

1.8

0.4

0.6

1.8

1.6

1.4

1.8

1.4

1.8

1.4

white 7

73s

74s

75s

76s

77s

BAS70-02L

BAS70-02V

BAS70-02W*

BAS70-04

BAS70-04S

BAS70-04W

BAS70-05

BAS70-05W

BAS70-06

BAS70-06W

BAS70-07

BAS70-07W

1.8

* Not for new design

Maximum Ratings at T = 25 °C, unless otherwise specified

Parameter

Symbol

Value

Unit

Diode reverse voltage

Forward current

100

Non-repetitive peak surge forward current

t ≤ 10ms

FSM

Total power dissipation

tot

BAS70, BAS70-07, T ≤ 72 °C

250

BAS70-02L, T ≤ 117 °C

BAS70-02W, -02V, T ≤ 107 °C

BAS70-04, BAS70-06, T ≤ 48 °C

BAS70-04S/W/-06W, BAS170W, T ≤ 97 °C

BAS70-05, T ≤ 22 °C

BAS70-05W, T ≤ 90 °C

BAS70-07W, T ≤ 114 °C

150

°C

Junction temperature

Operating temperature range

Storage temperature

-55 ... 125

-55 ... 150

Stg

2014-02-13

BAS70.../BAS170W

Thermal Resistance

Parameter

Junction - soldering point

BAS70, BAS70-07

BAS70-02L

BAS70-02W, -02V

BAS70-04, BAS70-06

BAS70-04S/W, BAS70-06W

BAS70-05

Symbol

thJS

Value

Unit

K/W

≤ 310

≤ 130

≤ 170

≤ 410

≤ 210

≤ 510

≤ 240

≤ 145

≤ 190

BAS70-05W

BAS70-07W

BAS170W

Electrical Characteristics at T = 25 °C, unless otherwise specified

Parameter

Symbol

Values

Unit

min.

typ. max.

DC Characteristics

Breakdown voltage

(BR)

= 10 µA

(BR)

0.1

Reverse current

µA

V = 50 V

Forward voltage

I = 1 mA

300

600

720

375

705

880

410

750

1000

I = 10 mA

I = 15 mA

Forward voltage matching

∆ V

I = 10 mA

¹For calculation of R

please refer to Application Note AN077 (Thermal Resistance Calculation)

thJA

∆V is the difference between lowest and highest V in a multiple diode component.

2014-02-13

BAS70.../BAS170W

Electrical Characteristics at T = 25 °C, unless otherwise specified

Parameter

Symbol

Values

typ. max.

Unit

min.

AC Characteristics

1.5

Diode capacitance

V = 0 , f = 1 MHz

Forward resistance

Ω

I = 10 mA, f = 10 kHz

100 ps

Charge carrier life time

I = 25 mA

2014-02-13

BAS70.../BAS170W

Diode capacitance C = ƒ (V )

Forward resistance r = ƒ (I )

f F

f = 1MHz

f = 10 kHz

10 ⁴

BAS 70W/BAS 170W

EHB00044

2.0

Ohm

C_T

1.5

1.0

0.5

0.0

10 ³

10 ²

10 ¹

10 ^-2

10 ^-1

10 ⁰

10 ¹

10 ²

V_R

Reverse current I = ƒ(V )

Forward current I = ƒ (V )

T = Parameter

BAS 70W/BAS 170W

EHB00042

BAS 70W/BAS 170W

EHB00043

10²

µ A

T_A= 150 C

Ι _F

Ι _R

10¹

85 C

10⁰

T_A= -40 C

10^-1

25 C

85 C

150 C

10^-1

25 C

10^-2

10^-3

10^-2

0.0

0.5

1.0

1.5

V_R

V_F

2014-02-13

BAS70.../BAS170W

Forward current I = ƒ (T )

F S

BAS70, BAS70-07

BAS70-02L

°C

15 30 45 60 75 90 105 120

150

15 30 45 60 75 90 105 120

150

Forward current I = ƒ (T )

BAS70-02W, -02V

BAS70-04, BAS70-06

°C

15 30 45 60 75 90 105 120

150

15 30 45 60 75 90 105 120

150

2014-02-13

BAS70.../BAS170W

Forward current I = ƒ (T )

F S

BAS70-04S/W, BAS70-06W, BAS170W

BAS70-05

°C

15 30 45 60 75 90 105 120

150

15 30 45 60 75 90 105 120

150

Forward current I = ƒ (T )

F S

BAS70-05W

BAS70-07W

°C

15 30 45 60 75 90 105 120

150

15 30 45 60 75 90 105 120

150

2014-02-13

BAS70.../BAS170W

Forward current I = ƒ (T )

Permissible Puls Load R

= ƒ (t )

thJS

BAS170W

BAS70

10 ³

K/W

10 ²

0.5

0.2

0.1

0.05

0.02

10 ¹

0.01

0.005

D = 0

10 ⁰

10 ^-6

10 ^-5

10 ^-4

10 ^-3

10 ^-2

10 ⁰

°C

15 30 45 60 75 90 105 120

150

Permissible Pulse Load

Permissible Puls Load R

= ƒ (t )

thJS

/ I

= ƒ (t )

BAS70-02L

Fmax FDC

BAS70

10 ²

10 ³

K/W

10 ²

D = 0

0.005

0.01

0.02

0.05

0.1

10 ¹

0.5

0.2

10 ¹

0.1

0.2

0.05

0.02

0.01

0.005

D = 0

0.5

10 ⁰

10 ^-6

10 ^-5

10 ^-4

10 ^-3

10 ^-2

10 ⁰

10 ^-6

10 ^-5

10 ^-4

10 ^-3

10 ^-2

10 ⁰

2014-02-13

BAS70.../BAS170W

Permissible Pulse Load

Permissible Puls Load R

= ƒ (t )

thJS

/ I

= ƒ (t )

BAS70-02W, -02V

Fmax FDC

BAS70-02L

10 ¹

10 ³

K/W

10 ²

D = 0

0.005

0.01

0.02

0.05

0.1

D=0.5

0.2

0.1

0.05

0.02

0.01

0.005

0.2

10 ¹

0.5

10 ⁰

10 ^-6

10 ^-5

10 ^-4

10 ^-3

10 ^-2

10 ⁰

10 ^-6

10 ^-5

10 ^-4

10 ^-3

10 ^-2

10 ⁰

Permissible Pulse Load

/ I = ƒ (t )

Permissible Puls Load R

BAS70-04, BAS70-06

= ƒ (t )

thJS

Fmax FDC

BAS70-02W, -02V

10 ¹

10 ³

K/W

D=0

0.005

0.01

0.02

0.05

0.1

10 ²

0.2

0.5

0.2

0.5

0.1

10 ¹

0.05

0.02

0.01

0.005

D = 0

10 ⁰

10 ^-6

10 ^-5

10 ^-4

10 ^-3

10 ^-2

10 ⁰

10 ^-6

10 ^-5

10 ^-4

10 ^-3

10 ^-2

10 ⁰

2014-02-13

BAS70.../BAS170W

Permissible Pulse Load

/ I = ƒ (t )

Permissible Puls Load R

BAS70-04S

= ƒ (t )

thJS

Fmax FDC

BAS70-04, BAS70-06

10 ²

10 ³

K/W

D = 0

0.005

0.01

0.02

0.05

0.1

10 ²

10 ¹

0.2

0.5

0.2

10 ¹

0.1

0.05

0.02

0.01

0.005

D = 0

10 ⁰

10 ^-6

10 ^-5

10 ^-4

10 ^-3

10 ^-2

10 ⁰

10 ^-6

10 ^-5

10 ^-4

10 ^-3

10 ^-2

10 ⁰

Permissible Pulse Load

Permissible Puls Load R

= ƒ (t )

thJS

/ I

= ƒ (t )

BAS70-04W, BAS70-06W

Fmax FDC

BAS70-04S

10 ²

10 ³

K/W

10 ²

D = 0

0.005

0.01

0.02

0.05

0.1

10 ¹

0.5

0.2

10 ¹

0.1

0.05

0.02

0.01

0.2

0.5

0.005

D = 0

10 ⁰

10 ^-6

10 ^-5

10 ^-4

10 ^-3

10 ^-2

10 ⁰

10 ^-6

10 ^-5

10 ^-4

10 ^-3

10 ^-2

10 ⁰

2014-02-13

BAS70.../BAS170W

Permissible Pulse Load

/ I = ƒ (t )

Permissible Puls Load R

BAS70-05

= ƒ (t )

thJS

Fmax FDC

BAS70-04W, BAS70-06W

10 ¹

10 ³

K/W

D = 0

0.005

0.01

10 ²

0.02

0.5

0.2

0.1

0.05

0.1

0.2

0.5

10 ¹

0.02

0.01

0.005

D = 0

10 ⁰

10 ^-6

10 ^-5

10 ^-4

10 ^-3

10 ^-2

10 ⁰

10 ^-6

10 ^-5

10 ^-4

10 ^-3

10 ^-2

10 ⁰

Permissible Pulse Load

Permissible Puls Load R

= ƒ (t )

thJS

/ I

= ƒ (t )

BAS70-05W

Fmax FDC

BAS70-05

10 ²

10 ³

K/W

10 ²

D = 0

0.005

0.01

0.02

0.05

0.1

0.5

10 ¹

0.2

0.1

0.05

0.02

0.2

10 ¹

0.5

0.01

0.005

D = 0

10 ⁰

10 ^-6

10 ^-5

10 ^-4

10 ^-3

10 ^-2

10 ⁰

10 ^-6

10 ^-5

10 ^-4

10 ^-3

10 ^-2

10 ⁰

2014-02-13

BAS70.../BAS170W

Permissible Pulse Load

/ I = ƒ (t )

Permissible Puls Load R

BAS70-07W

= ƒ (t )

thJS

Fmax FDC

BAS70-05W

10 ¹

10 ³

K/W

D = 0

0.005

0.01

0.02

0.05

0.1

10 ²

0.2

0.5

0.2

0.5

0.1

10 ¹

0.05

0.02

0.01

0.005

D = 0

10 ⁰

10 ^-6

10 ^-5

10 ^-4

10 ^-3

10 ^-2

10 ⁰

10 ^-6

10 ^-5

10 ^-4

10 ^-3

10 ^-2

10 ⁰

Permissible Pulse Load

/ I = ƒ (t )

Permissible Puls Load R

BAS170W

= ƒ (t )

thJS p

Fmax FDC

BAS70-07W

10 ²

10 ³

10 ²

10 ¹

10 ⁰

D = 0

0.005

0.01

0.02

0.05

0.1

10 ¹

0.5

0.2

0.5

0.1

0.05

0.02

0.01

0.005

D = 0

10 ⁰

10 ^-6

10 ^-5

10 ^-4

10 ^-3

10 ^-2

10 ⁰

10 ^-710 ^-610 ^-510 ^-410 ^-310 ^-2

10 ⁰

2014-02-13

BAS70.../BAS170W

Permissible Pulse Load

/ I

= ƒ (t )

Fmax FDC

BAS170W

10 ¹

D = 0

0.005

0.01

0.02

0.05

0.1

0.2

0.5

10 ⁰

10 ^-6

10 ^-5

10 ^-4

10 ^-3

10 ^-2

10 ⁰

2014-02-13

Package SC79

BAS70.../BAS170W

2014-02-13

Package SCD80

BAS70.../BAS170W

Package Outline

±02

±±0.

±0.3^+±0±ꢀ

±08

-±0±3

±03

Cathode

marking

±±0±ꢀ

±±0.

±07

Foot Print

±03ꢀ

Marking Layout (Example)

2±±ꢀ, June

Date code

BAR63-±2W

Type code

Cathode marking

Laser marking

Standard Packing

Reel ø.8± mm = 30±±± Pieces/Reel

Reel ø.8± mm = 80±±± Pieces/Reel (2 mm Pitch)

Reel ø33± mm = .±0±±± Pieces/Reel

Standard

Reel with 2 mm Pitch

±02

±07

Cathode

marking

±04

±09

Cathode

marking

2014-02-13

BAS70.../BAS170W

Date Code marking for discrete packages with

one digit (SCD80, SC79, SC75¹⁾) CES-Code

Month 2003 2004 2005 2006 2007 2008 2009 2010 2011 2012 2013 2014

1) New Marking Layout for SC75, implemented at October 2005.

2014-02-13

Package SOD323

BAS70.../BAS170W

2014-02-13

Package SOT143

BAS70.../BAS170W

2014-02-13

Package SOT23

BAS70.../BAS170W

2014-02-13

Package SOT323

BAS70.../BAS170W

2014-02-13

Package SOT343

BAS70.../BAS170W

2014-02-13

Package SOT363

BAS70.../BAS170W

2014-02-13

Package TSLP-2-1

BAS70.../BAS170W

2014-02-13

BAS70.../BAS170W

Edition 2009-11-16

Published by

Infineon Technologies AG

81726 Munich, Germany

 2009 Infineon Technologies AG

Legal Disclaimer

The information given in this document shall in no event be regarded as a guarantee

of conditions or characteristics. With respect to any examples or hints given herein,

any typical values stated herein and/or any information regarding the application of

the device, Infineon Technologies hereby disclaims any and all warranties and

liabilities of any kind, including without limitation, warranties of non-infringement of

intellectual property rights of any third party.

Information

For further information on technology, delivery terms and conditions and prices,

please contact the nearest Infineon Technologies Office (<www.infineon.com>).

Warnings

Due to technical requirements, components may contain dangerous substances.

For information on the types in question, please contact the nearest Infineon

Technologies Office.

Infineon Technologies components may be used in life-support devices or systems

only with the express written approval of Infineon Technologies, if a failure of such

components can reasonably be expected to cause the failure of that life-support

device or system or to affect the safety or effectiveness of that device or system.

Life support devices or systems are intended to be implanted in the human body or

to support and/or maintain and sustain and/or protect human life. If they fail, it is

reasonable to assume that the health of the user or other persons may be

endangered.

2014-02-13

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BAS7004E6327HTSA1产品参数

型号:	BAS7004E6327HTSA1
是否Rohs认证：	符合
生命周期：	Active
IHS 制造商：	INFINEON TECHNOLOGIES AG
包装说明：	R-PDSO-G3
Reach Compliance Code：	compliant
ECCN代码：	EAR99
HTS代码：	8541.10.00.70
Factory Lead Time：	4 weeks
风险等级：	1.5
配置：	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS
二极管元件材料：	SILICON
二极管类型：	RECTIFIER DIODE
最大正向电压 (VF)：	0.41 V
JESD-30 代码：	R-PDSO-G3
JESD-609代码：	e3
湿度敏感等级：	1
最大非重复峰值正向电流：	0.1 A
元件数量：	2
端子数量：	3
最高工作温度：	125 °C
最低工作温度：	-55 °C
最大输出电流：	0.07 A
封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE
峰值回流温度（摄氏度）：	NOT SPECIFIED
最大功率耗散：	0.25 W
参考标准：	AEC-Q101
最大重复峰值反向电压：	70 V
子类别：	Rectifier Diodes
表面贴装：	YES
技术：	SCHOTTKY
端子面层：	Tin (Sn)
端子形式：	GULL WING
端子位置：	DUAL
处于峰值回流温度下的最长时间：	NOT SPECIFIED
Base Number Matches：	1

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产品型号BAS7004E6327的概述

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