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产品型号BC547BZL1的Datasheet PDF文件预览

BC546B, BC547A, B, C,  
BC548B, C  
Amplifier Transistors  
NPN Silicon  
Features  
http://onsemi.com  
Pb−Free Package is Available*  
COLLECTOR  
1
2
BASE  
MAXIMUM RATINGS  
3
Rating  
Symbol  
Value  
Unit  
EMITTER  
Collector-Emitter Voltage  
V
CEO  
V
CBO  
V
EBO  
Vdc  
BC546  
BC547  
BC548  
65  
45  
30  
MARKING  
DIAGRAM  
Collector-Base Voltage  
Emitter-Base Voltage  
Vdc  
TO−92  
CASE 29  
STYLE 17  
BC546  
BC547  
BC548  
80  
50  
30  
BC  
54xx  
YWWG  
1
6.0  
Vdc  
2
3
Collector Current − Continuous  
I
C
100  
mAdc  
Total Device Dissipation @ T = 25°C  
Derate above 25°C  
P
625  
5.0  
mW  
mW/°C  
A
D
BC54xx = Specific Device Code  
= Year  
WW = Work Week  
Y
Total Device Dissipation @ T = 25°C  
P
D
1.5  
12  
Watt  
mW/°C  
C
Derate above 25°C  
G
= Pb−Free Package  
Operating and Storage Junction  
Temperature Range  
T , T  
J
−55 to  
+150  
°C  
stg  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 5 of this data sheet.  
Maximum ratings are those values beyond which device damage can occur.  
Maximum ratings applied to the device are individual stress limit values (not  
normal operating conditions) and are not valid simultaneously. If these limits  
are exceeded, device functional operation is not implied, damage may occur  
and reliability may be affected.  
THERMAL CHARACTERISTICS  
Characteristic  
Symbol  
Max  
Unit  
Thermal Resistance,  
R
200  
°C/W  
q
JA  
Junction−to−Ambient  
Thermal Resistance,  
Junction−to−Case  
R
83.3  
°C/W  
q
JC  
*For additional information on our Pb−Free strategy and soldering details, please  
download the ON Semiconductor Soldering and Mounting Techniques  
Reference Manual, SOLDERRM/D.  
Semiconductor Components Industries, LLC, 2004  
1
Publication Order Number:  
May, 2004 − Rev. 4  
BC546/D  
BC546B, BC547A, B, C, BC548B, C  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
A
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
OFF CHARACTERISTICS  
Collector − Emitter Breakdown Voltage  
(I = 1.0 mA, I = 0)  
BC546  
BC547  
BC548  
V
65  
45  
30  
V
(BR)CEO  
(BR)CBO  
(BR)EBO  
C
B
Collector − Base Breakdown Voltage  
(I = 100 mAdc)  
C
BC546  
BC547  
BC548  
V
V
80  
50  
30  
V
V
Emitter − Base Breakdown Voltage  
BC546  
BC547  
BC548  
6.0  
6.0  
6.0  
(I = 10 mA, I = 0)  
E
C
Collector Cutoff Current  
(V = 70 V, V = 0)  
I
CES  
BC546  
BC547  
BC548  
BC546/547/548  
0.2  
0.2  
0.2  
15  
15  
15  
4.0  
nA  
CE  
BE  
(V = 50 V, V = 0)  
CE  
BE  
(V = 35 V, V = 0)  
CE  
BE  
(V = 30 V, T = 125°C)  
mA  
CE  
A
ON CHARACTERISTICS  
DC Current Gain  
h
FE  
(I = 10 mA, V = 5.0 V)  
BC547A  
BC546B/547B/548B  
BC548C  
90  
150  
270  
C
CE  
(I = 2.0 mA, V = 5.0 V)  
BC546  
BC547  
BC548  
BC547A  
BC546B/547B/548B  
BC547C/BC548C  
110  
110  
110  
110  
200  
420  
180  
290  
520  
450  
800  
800  
220  
450  
800  
C
CE  
(I = 100 mA, V = 5.0 V)  
BC547A/548A  
BC546B/547B/548B  
BC548C  
120  
180  
300  
C
CE  
Collector − Emitter Saturation Voltage  
(I = 10 mA, I = 0.5 mA)  
V
V
CE(sat)  
0.09  
0.2  
0.3  
0.25  
0.6  
0.6  
C
B
(I = 100 mA, I = 5.0 mA)  
C
B
(I = 10 mA, I = See Note 1)  
C
B
Base − Emitter Saturation Voltage  
(I = 10 mA, I = 0.5 mA)  
V
0.7  
V
V
BE(sat)  
C
B
Base − Emitter On Voltage  
(I = 2.0 mA, V = 5.0 V)  
V
BE(on)  
0.55  
0.7  
0.77  
C
CE  
(I = 10 mA, V = 5.0 V)  
C
CE  
SMALL−SIGNAL CHARACTERISTICS  
Current − Gain − Bandwidth Product  
f
T
MHz  
(I = 10 mA, V = 5.0 V, f = 100 MHz)  
BC546  
BC547  
BC548  
150  
150  
150  
300  
300  
300  
C
CE  
Output Capacitance  
(V = 10 V, I = 0, f = 1.0 MHz)  
C
1.7  
4.5  
pF  
pF  
obo  
CB  
C
Input Capacitance  
(V = 0.5 V, I = 0, f = 1.0 MHz)  
C
ibo  
10  
EB  
C
Small − Signal Current Gain  
h
fe  
(I = 2.0 mA, V = 5.0 V, f = 1.0 kHz)  
BC546  
BC547/548  
BC547A  
BC546B/547B/548B  
BC547C/548C  
125  
125  
125  
240  
450  
220  
330  
600  
500  
900  
260  
500  
900  
C
CE  
Noise Figure  
NF  
dB  
(I = 0.2 mA, V = 5.0 V, R = 2 kW,  
f = 1.0 kHz, Df = 200 Hz)  
BC546  
BC547  
BC548  
2.0  
2.0  
2.0  
10  
10  
10  
C
CE  
S
1. I is value for which I = 11 mA at V = 1.0 V.  
B
C
CE  
http://onsemi.com  
2
BC546B, BC547A, B, C, BC548B, C  
BC547/BC548  
2.0  
1.5  
1.0  
V
= 10 V  
T = 25°C  
A
0.9  
0.8  
0.7  
CE  
T = 25°C  
A
V
@ I /I = 10  
C B  
BE(sat)  
1.0  
0.8  
V
BE(on)  
@ V = 10 V  
CE  
0.6  
0.5  
0.4  
0.3  
0.6  
0.4  
0.3  
0.2  
0.1  
V
@ I /I = 10  
C B  
CE(sat)  
0.2  
0
0.1  
0.2  
0.5 1.0  
2.0  
5.0 10  
20  
50 100 200  
0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100  
I , COLLECTOR CURRENT (mAdc)  
C
I , COLLECTOR CURRENT (mAdc)  
C
Figure 1. Normalized DC Current Gain  
Figure 2. “Saturation” and “On” Voltages  
2.0  
1.6  
1.2  
0.8  
0.4  
0
1.0  
1.2  
1.6  
2.0  
2.4  
2.8  
T = 25°C  
−55°C to +125°C  
A
I
C
= 200 mA  
I
C
= 50 mA  
I = 100 mA  
C
I
=
I =  
C
10 mA 20 mA  
C
0.02  
0.1  
1.0  
10 20  
0.2  
1.0  
10  
100  
I , BASE CURRENT (mA)  
B
I , COLLECTOR CURRENT (mA)  
C
Figure 3. Collector Saturation Region  
Figure 4. Base−Emitter Temperature Coefficient  
10  
7.0  
5.0  
400  
300  
T = 25°C  
A
200  
C
ib  
V
= 10 V  
CE  
T = 25°C  
100  
80  
3.0  
2.0  
A
C
ob  
60  
40  
30  
1.0  
20  
0.4 0.6 0.8 1.0  
2.0  
4.0 6.0 8.0 10  
20  
40  
0.5 0.7 1.0  
2.0 3.0  
5.0 7.0 10  
20 30  
50  
V , REVERSE VOLTAGE (VOLTS)  
R
I , COLLECTOR CURRENT (mAdc)  
C
Figure 5. Capacitances  
Figure 6. Current−Gain − Bandwidth Product  
http://onsemi.com  
3
BC546B, BC547A, B, C, BC548B, C  
BC546  
1.0  
T = 25°C  
A
V
= 5 V  
CE  
T = 25°C  
0.8  
A
V
@ I /I = 10  
C B  
BE(sat)  
2.0  
1.0  
0.5  
0.6  
0.4  
0.2  
0
V
@ V = 5.0 V  
CE  
BE  
0.2  
V
@ I /I = 10  
C B  
CE(sat)  
0.1 0.2  
1.0  
10  
100  
0.2  
0.5 1.0 2.0  
5.0  
10 20  
50 100 200  
I , COLLECTOR CURRENT (mA)  
C
I , COLLECTOR CURRENT (mA)  
C
Figure 7. DC Current Gain  
Figure 8. “On” Voltage  
2.0  
1.6  
1.2  
0.8  
0.4  
0
−1.0  
−1.4  
−1.8  
−2.2  
−2.6  
−3.0  
T = 25°C  
A
100 mA  
200 mA  
20 mA  
50 mA  
q
for V  
BE  
VB  
−55°C to 125°C  
I
=
C
10 mA  
0.02 0.05 0.1 0.2  
0.5  
1.0 2.0  
5.0 10  
20  
0.2  
0.5 1.0 2.0  
5.0  
10 20  
50  
100 200  
I , BASE CURRENT (mA)  
B
I , COLLECTOR CURRENT (mA)  
C
Figure 9. Collector Saturation Region  
Figure 10. Base−Emitter Temperature Coefficient  
40  
T = 25°C  
A
V
= 5 V  
CE  
T = 25°C  
500  
A
20  
10  
C
ib  
200  
100  
50  
6.0  
4.0  
C
ob  
20  
2.0  
0.1 0.2  
0.5  
1.0 2.0  
5.0  
10 20  
50  
100  
1.0  
5.0 10  
50 100  
V , REVERSE VOLTAGE (VOLTS)  
R
I , COLLECTOR CURRENT (mA)  
C
Figure 11. Capacitance  
Figure 12. Current−Gain − Bandwidth Product  
http://onsemi.com  
4
BC546B, BC547A, B, C, BC548B, C  
DEVICE ORDERING INFORMATION  
Device  
BC546B  
Package  
Shipping  
5000 Units / Bulk  
2000 Tape & Reel  
BC546BRL1  
BC546BZL1  
BC547ARL  
BC547ARL1  
BC547AZL1  
BC547B  
2000 Tape & Ammo Box  
2000 Tape & Reel  
2000 Tape & Reel  
2000 Tape & Ammo Box  
5000 Units / Bulk  
TO−92 (TO−226)  
BC547BRL1  
BC547BZL1  
BC547C  
2000 Tape & Reel  
2000 Tape & Ammo Box  
5000 Units / Bulk  
BC547CZL1  
BC548B  
2000 Tape & Ammo Box  
5000 Units / Bulk  
BC548BRL1  
BC548BZL1  
BC548BZL1G  
2000 Tape & Reel  
2000 Tape & Ammo Box  
TO−92 (TO−226)  
(Pb−Free)  
BC548C  
5000 Units / Bulk  
TO−92 (TO−226)  
BC548CZL1  
2000 Tape & Ammo Box  
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging  
Specifications Brochure, BRD8011/D.  
http://onsemi.com  
5
BC546B, BC547A, B, C, BC548B, C  
PACKAGE DIMENSIONS  
TO−92 (TO−226)  
CASE 29−11  
ISSUE AL  
NOTES:  
1. DIMENSIONING AND TOLERANCING PER ANSI  
Y14.5M, 1982.  
2. CONTROLLING DIMENSION: INCH.  
3. CONTOUR OF PACKAGE BEYOND DIMENSION R  
IS UNCONTROLLED.  
A
B
R
4. LEAD DIMENSION IS UNCONTROLLED IN P AND  
BEYOND DIMENSION K MINIMUM.  
P
L
INCHES  
DIM MIN MAX  
MILLIMETERS  
MIN  
4.45  
4.32  
3.18  
0.407  
1.15  
2.42  
0.39  
12.70  
6.35  
2.04  
−−−  
MAX  
5.20  
5.33  
4.19  
0.533  
1.39  
2.66  
0.50  
−−−  
SEATING  
PLANE  
K
A
B
C
D
G
H
J
0.175  
0.170  
0.125  
0.016  
0.045  
0.095  
0.015  
0.500  
0.250  
0.080  
−−−  
0.205  
0.210  
0.165  
0.021  
0.055  
0.105  
0.020  
−−−  
D
X X  
G
K
L
J
H
V
−−−  
−−−  
N
P
R
V
0.105  
0.100  
−−−  
2.66  
2.54  
−−−  
C
0.115  
0.135  
2.93  
3.43  
SECTION X−X  
−−−  
−−−  
1
N
STYLE 17:  
PIN 1. COLLECTOR  
2. BASE  
3. EMITTER  
N
ON Semiconductor and  
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice  
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability  
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.  
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All  
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights  
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications  
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should  
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,  
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death  
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal  
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.  
PUBLICATION ORDERING INFORMATION  
LITERATURE FULFILLMENT:  
N. American Technical Support: 800−282−9855 Toll Free  
USA/Canada  
ON Semiconductor Website: http://onsemi.com  
Order Literature: http://www.onsemi.com/litorder  
Literature Distribution Center for ON Semiconductor  
P.O. Box 5163, Denver, Colorado 80217 USA  
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada  
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada  
Email: orderlit@onsemi.com  
Japan: ON Semiconductor, Japan Customer Focus Center  
2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051  
Phone: 81−3−5773−3850  
For additional information, please contact your  
local Sales Representative.  
BC546/D  
配单直通车
BC547BZL1产品参数
型号:BC547BZL1
生命周期:Transferred
IHS 制造商:MOTOROLA INC
包装说明:CYLINDRICAL, O-PBCY-T3
Reach Compliance Code:unknown
ECCN代码:EAR99
HTS代码:8541.21.00.75
风险等级:5.56
其他特性:EUROPEAN PART NUMBER
最大集电极电流 (IC):0.1 A
基于收集器的最大容量:4.5 pF
集电极-发射极最大电压:45 V
配置:SINGLE
最小直流电流增益 (hFE):200
JEDEC-95代码:TO-92
JESD-30 代码:O-PBCY-T3
元件数量:1
端子数量:3
最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY
封装形状:ROUND
封装形式:CYLINDRICAL
极性/信道类型:NPN
功耗环境最大值:1.5 W
认证状态:Not Qualified
表面贴装:NO
端子形式:THROUGH-HOLE
端子位置:BOTTOM
晶体管应用:AMPLIFIER
晶体管元件材料:SILICON
标称过渡频率 (fT):300 MHz
VCEsat-Max:0.6 V
Base Number Matches:1
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