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产品型号BC848CDXV6T5G的Datasheet PDF文件预览

BC847CDXV6T1,  
BC847CDXV6T5  
BC848CDXV6T1,  
BC848CDXV6T5  
Dual General Purpose  
Transistors  
http://onsemi.com  
(3)  
(2)  
(1)  
Q
NPN Duals  
These transistors are designed for general purpose amplifier  
applications. They are housed in the SOT563 which is designed for  
low power surface mount applications.  
Q
1
2
(4)  
(5)  
(6)  
Features  
BC847CDXV6T1  
These are PbFree Devices  
MAXIMUM RATINGS  
6
Rating  
Symbol  
BC847 BC848  
Unit  
V
1
Collector Emitter Voltage  
Collector Base Voltage  
Emitter Base Voltage  
Collector Current Continuous  
V
CEO  
V
CBO  
V
EBO  
45  
50  
30  
30  
V
6.0  
100  
5.0  
100  
V
SOT563  
CASE 463A  
PLASTIC  
I
C
mAdc  
Stresses exceeding Maximum Ratings may damage the device. Maximum  
Ratings are stress ratings only. Functional operation above the Recommended  
Operating Conditions is not implied. Extended exposure to stresses above the  
Recommended Operating Conditions may affect device reliability.  
MARKING DIAGRAMS  
THERMAL CHARACTERISTICS  
Characteristic  
(One Junction Heated)  
Symbol  
Max  
Unit  
Total Device Dissipation, (Note 1)  
P
D
1x M G  
T = 25°C  
357  
2.9  
mW  
mW/°C  
A
G
Derate above 25°C  
1
Thermal Resistance,  
R
350  
°C/W  
q
JA  
Junction-to-Ambient (Note 1)  
1x = Device Code  
x = G or M  
Characteristic  
(Both Junctions Heated)  
Symbol  
Max  
Unit  
M
= Date Code  
Total Device Dissipation, (Note 1)  
P
D
G
= PbFree Package  
T = 25°C  
Derate above 25°C  
500  
4.0  
mW  
mW/°C  
A
(Note: Microdot may be in either location)  
Thermal Resistance,  
R
250  
°C/W  
q
JA  
Junction-to-Ambient (Note 1)  
ORDERING INFORMATION  
See detailed ordering and shipping information in the package  
dimensions section on page 2 of this data sheet.  
Junction and Storage  
Temperature Range  
T , T  
J
55 to +150  
°C  
stg  
1. FR4 @ Minimum Pad  
© Semiconductor Components Industries, LLC, 2010  
1
Publication Order Number:  
October, 2010 Rev. 2  
BC847CDXV6T1/D  
 
BC847CDXV6T1, BC847CDXV6T5 BC848CDXV6T1, BC848CDXV6T5  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
A
Characteristic  
Symbol  
Min  
Typ  
Max  
Unit  
OFF CHARACTERISTICS  
CollectorEmitter Breakdown Voltage  
V
V
(BR)CEO  
(I = 10 mA)  
C
BC847CDXV6T1  
BC848CDXV6T1  
45  
30  
CollectorEmitter Breakdown Voltage  
V
V
V
V
(BR)CES  
(BR)CBO  
(BR)EBO  
(I = 10 mA, V = 0)  
BC847CDXV6T1  
BC848CDXV6T1  
50  
30  
C
EB  
CollectorBase Breakdown Voltage  
(I = 10 mA)  
C
V
V
BC847CDXV6T1  
BC848CDXV6T1  
50  
30  
EmitterBase Breakdown Voltage  
(I = 1.0 mA)  
E
BC847CDXV6T1  
BC848CDXV6T1  
6.0  
5.0  
Collector Cutoff Current (V = 30 V)  
I
15  
5.0  
nA  
mA  
CB  
CBO  
(V = 30 V, T = 150°C)  
CB  
A
ON CHARACTERISTICS  
DC Current Gain  
h
FE  
(I = 10 mA, V = 5.0 V)  
420  
270  
520  
800  
C
CE  
(I = 2.0 mA, V = 5.0 V)  
C
CE  
CollectorEmitter Saturation Voltage (I = 10 mA, I = 0.5 mA)  
V
0.25  
0.6  
V
V
C
B
CE(sat)  
CollectorEmitter Saturation Voltage (I = 100 mA, I = 5.0 mA)  
C
B
BaseEmitter Saturation Voltage (I = 10 mA, I = 0.5 mA)  
V
0.7  
0.9  
C
B
BE(sat)  
BaseEmitter Saturation Voltage (I = 100 mA, I = 5.0 mA)  
C
B
BaseEmitter Voltage (I = 2.0 mA, V = 5.0 V)  
V
BE(on)  
580  
660  
700  
770  
mV  
C
CE  
BaseEmitter Voltage (I = 10 mA, V = 5.0 V)  
C
CE  
SMALLSIGNAL CHARACTERISTICS  
CurrentGain Bandwidth Product  
f
100  
MHz  
T
(I = 10 mA, V = 5.0 Vdc, f = 100 MHz)  
C
CE  
Output Capacitance (V = 10 V, f = 1.0 MHz)  
C
4.5  
10  
pF  
dB  
CB  
obo  
Noise Figure  
NF  
(I = 0.2 mA, V = 5.0 Vdc, R = 2.0 kW,f = 1.0 kHz, BW = 200 Hz)  
C
CE  
S
ORDERING INFORMATION  
Device  
Specific Marking  
Package  
SOT563  
SOT563  
Shipping  
BC847CDXV6T1  
4000 Units / Tape & Reel  
4000 Units / Tape & Reel  
BC847CDXV6T1G  
(PbFree)  
1G  
BC847CDXV6T5  
SOT563  
8000 Units / Tape & Reel  
8000 Units / Tape & Reel  
BC847CDXV6T5G  
SOT563  
(PbFree)  
BC848CDXV6T1  
SOT563  
4000 Units / Tape & Reel  
4000 Units / Tape & Reel  
BC848CDXV6T1G  
SOT563  
(PbFree)  
1L  
BC848CDXV6T5  
SOT563  
8000 Units / Tape & Reel  
8000 Units / Tape & Reel  
BC848CDXV6T5G  
SOT563  
(PbFree)  
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging  
Specifications Brochure, BRD8011/D.  
http://onsemi.com  
2
BC847CDXV6T1, BC847CDXV6T5 BC848CDXV6T1, BC848CDXV6T5  
TYPICAL CHARACTERISTICS  
1000  
900  
800  
700  
600  
500  
400  
0.30  
I /I = 20  
C
B
V
CE  
= 1 V  
150°C  
0.25  
0.20  
0.15  
0.10  
150°C  
25°C  
25°C  
55°C  
300  
200  
55°C  
0.05  
0
100  
0
0.001  
0.01  
0.1  
1
0.0001  
0.001  
0.01  
0.1  
I , COLLECTOR CURRENT (A)  
C
I , COLLECTOR CURRENT (A)  
C
Figure 1. DC Current Gain vs. Collector  
Current  
Figure 2. Collector Emitter Saturation Voltage  
vs. Collector Current  
1.1  
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
0.6  
V
CE  
= 5 V  
I /I = 20  
1.0  
0.9  
0.8  
0.7  
0.6  
0.5  
0.4  
C
B
55°C  
25°C  
55°C  
25°C  
150°C  
0.5  
0.4  
150°C  
0.3  
0.2  
0.3  
0.2  
0.0001  
0.001  
0.01  
0.1  
0.0001  
0.001  
0.01  
0.1  
I , COLLECTOR CURRENT (A)  
C
I , COLLECTOR CURRENT (A)  
C
Figure 3. Base Emitter Saturation Voltage vs.  
Collector Current  
Figure 4. Base Emitter Voltage vs. Collector  
Current  
http://onsemi.com  
3
BC847CDXV6T1, BC847CDXV6T5 BC848CDXV6T1, BC848CDXV6T5  
TYPICAL CHARACTERISTICS  
2.0  
1.6  
1.2  
0.8  
0.4  
0
1.0  
T = 25°C  
-55°C to +125°C  
A
1.2  
1.6  
2.0  
2.4  
2.8  
I = 200 mA  
C
I =  
I = I = 50 mA  
C
I = 100 mA  
C
C
C
10 mA 20 mA  
0.02  
0.1  
1.0  
10 20  
0.2  
1.0  
10  
100  
I , BASE CURRENT (mA)  
B
I , COLLECTOR CURRENT (mA)  
C
Figure 5. Collector Saturation Region  
Figure 6. BaseEmitter Temperature Coefficient  
10  
7.0  
5.0  
400  
300  
T = 25°C  
A
200  
C
ib  
V
= 10 V  
CE  
T = 25°C  
100  
80  
3.0  
2.0  
A
C
ob  
60  
40  
30  
1.0  
20  
0.4 0.6 0.8 1.0  
2.0  
4.0 6.0 8.0 10  
20  
40  
0.5 0.7 1.0  
2.0 3.0  
5.0 7.0 10  
20 30  
50  
V , REVERSE VOLTAGE (VOLTS)  
R
I , COLLECTOR CURRENT (mAdc)  
C
Figure 7. Capacitances  
Figure 8. CurrentGain Bandwidth Product  
1
10 mS  
1 mS  
100 mS  
1 S  
0.1  
Thermal Limit  
0.01  
0.001  
0.1  
1
10  
100  
V
CE  
, COLLECTOR EMITTER VOLTAGE (V)  
Figure 9. Safe Operating Area  
http://onsemi.com  
4
BC847CDXV6T1, BC847CDXV6T5 BC848CDXV6T1, BC848CDXV6T5  
PACKAGE DIMENSIONS  
SOT563, 6 LEAD  
CASE 463A01  
ISSUE F  
NOTES:  
D
X−  
1. DIMENSIONING AND TOLERANCING PER ANSI  
A
Y14.5M, 1982.  
2. CONTROLLING DIMENSION: MILLIMETERS  
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD  
FINISH THICKNESS. MINIMUM LEAD THICKNESS  
IS THE MINIMUM THICKNESS OF BASE MATERIAL.  
L
6
5
2
4
3
E
Y−  
H
E
MILLIMETERS  
DIM MIN NOM MAX  
INCHES  
MIN  
NOM MAX  
1
A
b
C
D
E
e
0.50  
0.17  
0.08  
1.50  
1.10  
0.55  
0.22  
0.12  
1.60  
1.20  
0.5 BSC  
0.20  
1.60  
0.60 0.020 0.021 0.023  
0.27 0.007 0.009 0.011  
0.18 0.003 0.005 0.007  
1.70 0.059 0.062 0.066  
1.30 0.043 0.047 0.051  
0.02 BSC  
b 56 PL  
C
e
M
0.08 (0.003)  
X Y  
L
0.10  
1.50  
0.30 0.004 0.008 0.012  
1.70 0.059 0.062 0.066  
H
E
STYLE 1:  
PIN 1. EMITTER 1  
2. BASE 1  
3. COLLECTOR 2  
4. EMITTER 2  
5. BASE 2  
6. COLLECTOR 1  
SOLDERING FOOTPRINT*  
0.3  
0.0118  
0.45  
0.0177  
1.0  
0.0394  
1.35  
0.0531  
0.5  
0.5  
mm  
inches  
ǒ
Ǔ
SCALE 20:1  
0.0197 0.0197  
*For additional information on our PbFree strategy and soldering  
details, please download the ON Semiconductor Soldering and  
Mounting Techniques Reference Manual, SOLDERRM/D.  
ON Semiconductor and  
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice  
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability  
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.  
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All  
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights  
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications  
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should  
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,  
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death  
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal  
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.  
PUBLICATION ORDERING INFORMATION  
LITERATURE FULFILLMENT:  
N. American Technical Support: 8002829855 Toll Free  
USA/Canada  
Europe, Middle East and Africa Technical Support:  
Phone: 421 33 790 2910  
Japan Customer Focus Center  
Phone: 81357733850  
ON Semiconductor Website: www.onsemi.com  
Order Literature: http://www.onsemi.com/orderlit  
Literature Distribution Center for ON Semiconductor  
P.O. Box 5163, Denver, Colorado 80217 USA  
Phone: 3036752175 or 8003443860 Toll Free USA/Canada  
Fax: 3036752176 or 8003443867 Toll Free USA/Canada  
Email: orderlit@onsemi.com  
For additional information, please contact your local  
Sales Representative  
BC847CDXV6T1/D  
配单直通车
BC848CDXV6T5G产品参数
型号:BC848CDXV6T5G
是否Rohs认证: 符合
生命周期:Obsolete
包装说明:LEAD FREE, PLASTIC, CASE 463A-01, 6 PIN
针数:6
制造商包装代码:CASE 463A-01
Reach Compliance Code:compliant
ECCN代码:EAR99
风险等级:5.55
最大集电极电流 (IC):0.1 A
集电极-发射极最大电压:30 V
配置:SEPARATE, 2 ELEMENTS
最小直流电流增益 (hFE):420
JESD-30 代码:R-PDSO-F6
JESD-609代码:e3
湿度敏感等级:1
元件数量:2
端子数量:6
最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR
封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:NPN
最大功率耗散 (Abs):0.5 W
认证状态:Not Qualified
子类别:Other Transistors
表面贴装:YES
端子面层:Tin (Sn)
端子形式:FLAT
端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:AMPLIFIER
晶体管元件材料:SILICON
标称过渡频率 (fT):100 MHz
Base Number Matches:1
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