BC848CT116原理图各脚功能电路原理芯片引脚定义引脚图及功能-中国IC网-芯三七

BC848BW / BC848B / BC848C

Transistors

NPN General Purpose Transistor

BC848BW / BC848B / BC848C

!Features

!External dimensions (Units : mm)

1) BV^CEOminimum is 30V (IC=1mA)

2) Complements the BC858B / BC858BW.

BC848BW

2.0 0.2

1.3 0.1

0.9 0.1

0.7 0.1

0.65 0.65

0.2

(1)

(2)

0~0.1

(3)

+0.1

(1) Emitter

(2) Base

(3) Collector

0.3

0.15 0.05

−0

All terminals have same dimensions

ROHM : UMT3

EIAJ : SC-70

BC848B, BC848C

2.9 0.2

1.9 0.2

0.95 0.95

+0.2

0.95

−0.1

0.45 0.1

(2)

(1)

0~0.1

0.2Min.

(3)

+0.1

0.15

+0.1

−0.06

0.4

(1) Emitter

(2) Base

(3) Collector

−0.05

All terminals have same dimensions

ROHM : SST3

!Absolute maximum ratings (Ta=25°C)

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Symbol

Limits

30

Unit

V

VCBO

VCEO

VEBO

30

V

5

V

I

C

0.1

A

0.2

∗

Collector power dissipation

P

C

W

0.35

150

Junction temperature

Storage temperature

∗ When mounted on a 7×5×0.6mm ceramic board.

Tj

°C

Tstg

−55~+150

!Electrical characteristics (Ta=25°C)

Parameter

Symbol Min. Typ. Max. Unit

Conditions

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

BV^CBO

30

5

−

15

V

I

C

=50µA

=1mA

BVCEO

BVEBO

C

E

=50µA

−

V

CB=30V

CB=30V, Ta=150°C

Collector cutoff current

I

CBO

µA

5

V

−

0.58

200

420

−

200

0.25

0.6

0.77

450

800

−

I

C

/I

B

=10mA/0.5mA

=100mA/5mA

Collector-emitter saturation voltage

Base-emitter saturation voltage

DC current transfer ratio

V

CE(sat)

V

−

C/I

B

V

BE(on)

V

CE/I

C=5V/10mA

C=5V/2mA

(BC848B/BW)

(BC848C)

hFE

Transition frequency

f

T

MHz

pF

V

CE=5V, I

CB=10V, I

EB=0.5V, I

E

=−20mA, f=100MHz

=0, f=1MHz

Collector output capacitance

Cob

Cib

−

3

−

E

8

pF

E

(SPEC-C22)

1/5

BC848BW / BC848B / BC848C

Transistors

!Packaging specifications

Part No.

Packaging type

Marking

BC848BW

UMT3

G1K

BC848B

SST3

G1K

BC848C

SST3

G1L

Code

T106

T116

Basic ordering unit (pieces)

3000

!Electrical characteristic curves

100

10.0

35

30

Ta=25°C

8.0

6.0

80

60

40

25

20

15

4.0

2.0

0

10

0.1

20

5

I

B

=0µA Ta=25°C

2.0

CE-COLLECTOR-EMITTER VOLTAGE (V)

IB=0mA

0

1.0

0

1.0

2.0

V

CE−COLLECTOR-EMITTER VOLTAGE (V)

Fig.2 Grounded emitter output

Fig.1 Grounded emitter output

characteristics (

)

characteristics (

)

1000

100

10

Ta=25°C

V

CE=10V

5V

1V

0.1

1.0

10

C-COLLECTOR CURRENT (mA)

100

1000

I

Fig.3 DC current gain vs. collector current ( )

1000

100

10

V

CE=5V

Ta=125°C

Ta=25°C

Ta=−55°C

0.1

1.0

10

100

1000

I

C-COLLECTOR CURRENT (mA)

Fig.4 DC current gain vs. collector current (

)

2/5

BC848BW / BC848B / BC848C

Transistors

1000

Ta=25°C

CE=5V

f=1kHz

V

100

10

0.01

0.1

1

10

100

I

C-COLLECTOR CURRENT (mA)

Fig.5 AC current gain vs. collector current

0.18

0.16

Ta=25°C

VCE=5V

1.8

1.6

Ta=25°C

/I =10

1.8

I

C/I

B

=10

I

C B

1.6

1.2

0.8

0.12

0.08

1.2

0.8

0.04

0

0.4

0

0.4

0

0.1

1.0

10

100

0.1

1.0

10

100

0.1

1.0

10

100

I

C

-COLLECTOR CURRENT (mA)

IC-COLLECTOR CURRENT (mA)

I

C-COLLECTOR CURRENT (mA)

Fig.8 Grounded emitter propagation

characteristics

Fig.6 Collector-emitter saturation

voltage vs. collector current

Fig.7 Base-emitter saturation

voltage vs. collector current

1000

40V

Ta=25°C

=10

Ta=25°C

I

C

/

I

B

IC/IB=10

I =101B1=101B2

C

3V

CE=15V

V

VCC=40V

100

10

1.0

10

1.0

10

1.0

10

-COLLECTOR CURRENT (mA)

100

10

IC-COLLECTOR CURRENT (mA)

100

10

C-COLLECTOR CURRENT (mA)

100

I

C

I

Fig.9 Turn-on time vs. collector

current

Fig.10 Rise time vs. collector

current

Fig.11 Storage time vs. collector

current

3/5

BC848BW / BC848B / BC848C

Transistors

100

10

1

50

1000

100MHz 200MHz 300MHz 400MHz

Ta=25°C

f=1MHz

Ta=25°C

CC=40V

=101B1=101B2

V

I

C

400MHz

300MHz

200MHz

100MHz

5.0

100

Cob

0.5

10

1.0

0.5

1

10

50

10

100

500

10

C-COLLECTOR CURRENT (mA)

100

REVERSE BIAS VOLTAGE (V)

I

C-COLLECTOR CURRENT (mA)

I

Fig.13 Input/output capacitance

vs. voltage

Fig.12 Fall time vs. collector

current

Fig.14 Gain bandwidth product

1000

100

10n

1n

Ta=25°C

CE=6V

f=270Hz

VCB=30V

Ta=25°C

CE=5V

V

hoe

hre

10

hie

100P

10P

hre

100

hfe

1

I =1mA

C

hie=7.8kΩ

hfe=280

1P

hoe

hie

10

hre=4.5×10⁻⁵

hoe=7.5µS

10

0.5 1.0

0.1

0.1P

10

100

500

1

100

0

25

50

75

100

125

150

I

C-COLLECTOR CURRENT (mA)

I

C-COLLECTOR CURRENT (mA)

T

A

-AMBIENT TEMPERATURE (°C)

Fig.15 Gain bandwidth product

vs. collector current

Fig.16 h parameter

vs. collector current

Fig.17 Collector cutoff current

100k

10k

12

Ta=25°C

CE=5V

f=10Hz

Ta=25°C

V

CE=5V

=100µA

=10kΩ

12dB

8dB

5dB

3dB

I

C

NF

10

8

=

RS

1dB

6

4

1k

2

0

100

0.01

0.1

1

10

100

1k

10k

100k

I

C-COLLECTOR CURRENT (mA)

f-FREQUENCY (Hz)

Fig.19 Noise characteristics (

)

Fig.18 Noise vs. collector current

4/5

BC848BW / BC848B / BC848C

Transistors

100k

10k

100k

Ta=25°C

CE=5V

f=30Hz

8dB

V

12dB

5dB

8dB

5dB

3dB

NF

3dB

Ta=25°C

CE=5V

f=1kHz

Ta=25°C

CE=5V

f=10kHz

=

1dB

NF

V

=

1dB

10k

1k

100

0.01

100

0.01

100

0.1

1

10

0.1

1

10

0.01

0.1

1

10

I

C-COLLECTOR CURRENT (mA)

I

C-COLLECTOR CURRENT (mA)

I

C-COLLECTOR CURRENT (mA)

Fig.21 Noise characteristics (

)

Fig.22 Noise characteristics (

)

Fig.20 Noise characteristics (

)

5/5

型号:	BC848CT116
是否无铅：	不含铅
是否Rohs认证：	符合
生命周期：	Active
包装说明：	SMALL OUTLINE, R-PDSO-G3
针数：	3
Reach Compliance Code：	compliant
ECCN代码：	EAR99
HTS代码：	8541.21.00.75
风险等级：	5.76
Is Samacsys：	N
最大集电极电流 (IC)：	0.1 A
基于收集器的最大容量：	3 pF
集电极-发射极最大电压：	30 V
配置：	SINGLE
最小直流电流增益 (hFE)：	420
JESD-30 代码：	R-PDSO-G3
JESD-609代码：	e1
湿度敏感等级：	1
元件数量：	1
端子数量：	3
最高工作温度：	150 °C
封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR
封装形式：	SMALL OUTLINE
峰值回流温度（摄氏度）：	260
极性/信道类型：	NPN
最大功率耗散 (Abs)：	0.35 W
认证状态：	Not Qualified
子类别：	Other Transistors
表面贴装：	YES
端子面层：	Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)
端子形式：	GULL WING
端子位置：	DUAL
处于峰值回流温度下的最长时间：	10
晶体管应用：	AMPLIFIER
晶体管元件材料：	SILICON
标称过渡频率 (fT)：	200 MHz
VCEsat-Max：	0.3 V
Base Number Matches：	1

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