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    产品型号BC327BU的Datasheet PDF文件预览

    BC327/328  
    Switching and Amplifier Applications  
    •
    •
    Suitable for AF-Driver stages and low power output stages  
    Complement to BC337/BC338  
    TO-92  
    1. Collector 2. Base 3. Emitter  
    1
    PNP Epitaxial Silicon Transistor  
    Absolute Maximum Ratings T =25°C unless otherwise noted  
    a
    Symbol  
    Parameter  
    Value  
    Units  
    V
    V
    V
    Collector-Emitter Voltage  
    : BC327  
    : BC328  
    Collector-Emitter Voltage  
    CES  
    -50  
    -30  
    V
    V
    CEO  
    EBO  
    : BC327  
    : BC328  
    -45  
    -25  
    V
    V
    Emitter-Base Voltage  
    -5  
    -800  
    V
    I
    Collector Current (DC)  
    Collector Power Dissipation  
    Junction Temperature  
    Storage Temperature  
    mA  
    mW  
    °C  
    C
    P
    625  
    C
    T
    T
    150  
    J
    -55 ~ 150  
    °C  
    STG  
    Electrical Characteristics T =25°C unless otherwise noted  
    a
    Symbol  
    Parameter  
    Test Condition  
    Min.  
    Typ.  
    Max.  
    Units  
    BV  
    BV  
    BV  
    Collector-Emitter Breakdown Voltage I = -10mA, I =0  
    CEO  
    CES  
    EBO  
    C
    B
    : BC327  
    : BC328  
    -45  
    -25  
    V
    V
    Collector-Emitter Breakdown Voltage I = -0.1mA, V =0  
    C
    BE  
    : BC327  
    : BC328  
    -50  
    -30  
    V
    V
    Emitter-Base Breakdown Voltage  
    I = -10µA, I =0  
    -5  
    V
    E
    C
    I
    Collector Cut-off Current  
    : BC327  
    CES  
    V
    V
    = -45V, V =0  
    = -25V, V =0  
    BE  
    -2  
    -2  
    -100  
    -100  
    nA  
    nA  
    CE  
    CE  
    BE  
    : BC328  
    h
    h
    DC Current Gain  
    V
    V
    = -1V, I = -100mA  
    100  
    40  
    630  
    FE1  
    FE2  
    CE  
    CE  
    C
    = -1V, I = -300mA  
    C
    V
    V
    (sat) Collector-Emitter Saturation Voltage  
    (on) Base-Emitter On Voltage  
    Current Gain Bandwidth Product  
    Output Capacitance  
    I = -500mA, I = -50mA  
    -0.7  
    -1.2  
    V
    V
    CE  
    C
    B
    V
    = -1V, I = -300mA  
    C
    BE  
    CE  
    CE  
    CB  
    f
    V
    V
    = -5V, I = -10mA, f=20MHz  
    100  
    12  
    MHz  
    pF  
    T
    C
    C
    = -10V, I =0, f=1MHz  
    ob  
    E
    h
    Classification  
    FE  
    Classification  
    16  
    100 ~ 250  
    60-  
    25  
    40  
    h
    h
    160 ~ 400  
    100-  
    250 ~ 630  
    170-  
    FE1  
    FE2  
    ©2002 Fairchild Semiconductor Corporation  
    Rev. B1, August 2002  
    Typical Characteristics  
    -500  
    -400  
    -300  
    -20  
    -16  
    -12  
    -8  
    -200  
    IB = - 1.0mA  
    IB = - 0.5mA  
    -100  
    -4  
    IB = 0  
    -0  
    IB = 0  
    -1  
    -2  
    -3  
    -4  
    -5  
    -10  
    -20  
    -30  
    -40  
    -50  
    VCE[V], COLLECTOR-EMITTER VOLTAGE  
    VCE[V], COLLECTOR-EMITTER VOLTAGE  
    Figure 1. Static Characteristic  
    Figure 2. Static Characteristic  
    1000  
    100  
    10  
    -10  
    PULSE  
    IC = 10 IB  
    PULSE  
    VCE = - 2.0V  
    VCE(sat)  
    -1  
    - 1.0V  
    -0.1  
    VBE(sat)  
    1
    -0.1  
    -0.01  
    -0.1  
    -1  
    -10  
    -100  
    -1000  
    -1  
    -10  
    -100  
    -1000  
    IC[mA], COLLECTOR CURRENT  
    IC[mA], COLLECTOR CURRENT  
    Figure 3. DC current Gain  
    Figure 4. Base-Emitter Saturation Voltage  
    Collector-Emitter Saturation Voltage  
    -1000  
    -100  
    -10  
    1000  
    VCE = -5.0V  
    VCE = -1V  
    PULSE  
    100  
    -1  
    -0.1  
    -0.4  
    10  
    -0.5  
    -0.6  
    -0.7  
    -0.8  
    -0.9  
    -1  
    -10  
    -100  
    VBE[V], BASE-EMITTER VOLTAGE  
    IC[mA], COLLECTOR CURRENT  
    Figure 5. Base-Emitter On Voltage  
    Figure 6. Gain Bandwidth Product  
    ©2002 Fairchild Semiconductor Corporation  
    Rev. B1, August 2002  
    Package Dimensions  
    TO-92  
    +0.25  
    –0.15  
    4.58  
    0.46 ±0.10  
    +0.10  
    –0.05  
    1.27TYP  
    1.27TYP  
    0.38  
    [1.27 ±0.20  
    ]
    [1.27 ±0.20]  
    3.60 ±0.20  
    (R2.29)  
    Dimensions in Millimeters  
    ©2002 Fairchild Semiconductor Corporation  
    Rev. B1, August 2002  
    TRADEMARKS  
    The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not  
    intended to be an exhaustive list of all such trademarks.  
    ACEx™  
    FACT™  
    ImpliedDisconnect™ PACMAN™  
    SPM™  
    ActiveArray™  
    Bottomless™  
    CoolFET™  
    CROSSVOLT™ FRFET™  
    DOME™  
    FACT Quiet series™ ISOPLANAR™  
    POP™  
    Stealth™  
    FAST®  
    LittleFET™  
    MicroFET™  
    MicroPak™  
    Power247™  
    PowerTrench®  
    QFET™  
    SuperSOT™-3  
    SuperSOT™-6  
    SuperSOT™-8  
    SyncFET™  
    FASTr™  
    GlobalOptoisolator™ MICROWIRE™  
    QS™  
    EcoSPARK™  
    E2CMOS™  
    EnSigna™  
    Across the board. Around the world.™  
    The Power Franchise™  
    GTO™  
    HiSeC™  
    I2C™  
    MSX™  
    MSXPro™  
    OCX™  
    OCXPro™  
    OPTOLOGIC®  
    OPTOPLANAR™  
    QT Optoelectronics™ TinyLogic™  
    Quiet Series™  
    TruTranslation™  
    RapidConfigure™  
    RapidConnect™  
    UHC™  
    UltraFET®  
    SILENT SWITCHER® VCX™  
    SMART START™  
    Programmable Active Droop™  
    DISCLAIMER  
    FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY  
    PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY  
    LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;  
    NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.  
    LIFE SUPPORT POLICY  
    FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT  
    DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR  
    CORPORATION.  
    As used herein:  
    1. Life support devices or systems are devices or systems  
    which, (a) are intended for surgical implant into the body,  
    or (b) support or sustain life, or (c) whose failure to perform  
    when properly used in accordance with instructions for use  
    provided in the labeling, can be reasonably expected to  
    result in significant injury to the user.  
    2. A critical component is any component of a life support  
    device or system whose failure to perform can be  
    reasonably expected to cause the failure of the life support  
    device or system, or to affect its safety or effectiveness.  
    PRODUCT STATUS DEFINITIONS  
    Definition of Terms  
    Datasheet Identification  
    Product Status  
    Definition  
    Advance Information  
    Formative or In  
    Design  
    This datasheet contains the design specifications for  
    product development. Specifications may change in  
    any manner without notice.  
    Preliminary  
    First Production  
    This datasheet contains preliminary data, and  
    supplementary data will be published at a later date.  
    Fairchild Semiconductor reserves the right to make  
    changes at any time without notice in order to improve  
    design.  
    No Identification Needed  
    Obsolete  
    Full Production  
    This datasheet contains final specifications. Fairchild  
    Semiconductor reserves the right to make changes at  
    any time without notice in order to improve design.  
    Not In Production  
    This datasheet contains specifications on a product  
    that has been discontinued by Fairchild semiconductor.  
    The datasheet is printed for reference information only.  
    ©2002 Fairchild Semiconductor Corporation  
    Rev. I1  
    配单直通车
    BC327BP产品参数
    型号:BC327BP
    是否Rohs认证： 不符合
    生命周期：Obsolete
    IHS 制造商：ZETEX PLC
    包装说明：,
    Reach Compliance Code：unknown
    风险等级：5.92
    最大集电极电流 (IC)：0.8 A
    配置：Single
    最小直流电流增益 (hFE)：250
    JESD-609代码：e0
    最高工作温度：150 °C
    极性/信道类型：PNP
    最大功率耗散 (Abs)：0.625 W
    子类别：Other Transistors
    表面贴装：NO
    端子面层：Tin/Lead (Sn/Pb)
    标称过渡频率 (fT)：100 MHz
    Base Number Matches：1
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